Theoretical Study of Heteroatom Doping in Tuning the Catalytic Activity of Graphene for Triiodide Reduction

Graphene with heteroatom doping has found increasing applications in a broad range of catalytic reactions. However, the doping effects accounting for the enhanced catalytic activity still remain elusive. In this work, taking the triiodide electroreduction reaction as an example, we study systematically the intrinsic activity of graphene and explore the origin of doping-induced activity variation using first-principles calculations, in which two typical N and S dopants are tested. The most common graphene structures, basal plane, armchair edge, and zigzag edge, are considered, and it is found that the former two structures show a weak adsorption ability for the iodine atom (the key intermediate in the triiodide electroreduction reaction), corresponding to a low catalytic activity. Doping either N or S can strengthen the adsorption and thus increase the activity, and the codoping of N and S (NS-G) exhibits a synergistic effect. A detailed investigation into the whole process of the triiodide electroreduction reaction at the CH3CN/NS-G interface is also carried out to verify these activity trends. It is found that the zigzag edges which contain spin electrons show a relatively stronger adsorption strength compared with the basal plane and armchair edge, and initial doping would result in the spin disappearance that evidently weakens the adsorption; with the disappearance of spin, however, further doping can increase the adsorption again, suggesting that the spin electrons may play a preliminary role in affecting the intrinsic activity of graphene. We also analyzed extensively the origin of doping-induced adsorption enhancement of graphene in the absence of spin; it can be rationalized from the electronic and geometric factors. Specifically, N doping can result in a more delocalized “electron-donating area” to enhance I adsorption, while S doping provides a localized structural distortion, which activates the nearest sp2-C into coordinatively unsaturated sp3-C. These results explain well the improved activity of the doping and the synergistic effect of the codoping. The understandings are generalized to provide insight into the enhanced activity of the oxygen reduction reaction on heteroatom doped graphene. This work may be of importance toward the design of high-activity graphene based material.

High-Performance WSe2 CMOS Technology and Integrated Circuits.

Because of their extraordinary structural and electrical properties, two dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (~38) and small static power (Pico-Watts), paving the way for low power electronic system in 2D materials.

Few-layer, large-area, 2D covalent organic framework semiconductor thin films.

In this work, we synthesize large-area thin films of a conjugated, imine-based, two-dimensional covalent organic framework at the solution/air interface. Thicknesses between ∼2-200 nm are achieved. Films can be transferred to any desired substrate by lifting from underneath, enabling their use as the semiconducting active layer in field-effect transistors.

Effect of II‐VI Semiconductor Nanomaterials and Electron Irradiation on Polystyrene (PS) & Poly(ethylene‐co‐vinyl acetate) (EVA)

Organic-inorganic nanocomposites combine unique properties of both the constituents in one material. Among this group of materials, clay based as well as ZnO, TiO2 nanocomposites have been found to have diverse applications. Optoelectronic devices require polymerinorganic systems to meet certain desired properties. Dielectric properties of conventional polymers like poly(ethylene-co-vinyl acetate) (EVA) and polystyrene (PS) may also be tailor tuned with the incorporation of inorganic fillers in very small amounts. Electrical conductivity and surface resistivity of polymer matrices are found to improve with inorganic nanofillers. II-VI semiconductors and their nano materials have attracted material scientists because of their unique optical properties of photoluminescence, UV photodetection and light induced conductivity. Cadmium selenide (CdSe), zinc selenide (ZnSe) and zinc oxide (ZnO) are some of the most promising members of the IIVI semiconductor family, used in light-emitting diodes, nanosensors, non-linear optical (NLO) absorption etc. EVA and PS materials were selected as the matrices in the present study because they are commercially used polymers and have not been the subject of research for opto-electronic properties with semiconductor nanomaterials

Comparison of digital imaging systems for neutron radiography

FAPESP:95/02610

Boron uptake in normal melanocytes and melanoma cells and boron biodistribution study in mice bearing B16F10 melanoma for boron neutron capture therapy

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

SUPPLIER INVOLVEMENT IN NEW PRODUCT DEVELOPMENT: A CASE STUDY FROM THE SEMICONDUCTOR INDUSTRY

Global competition requires that the companies adapt themselves to technological changes rapidly, develop new products, reduce the cost, shorten the time to market, and increase the quality. In this context, supplier involvement in New Product Development (NPD) is determinant for a company to respond to the requirements of the increasingly dynamic markets. The main purpose of the paper is to demonstrate the importance of supplier involvement in NPD, buyer-supplier relationships and their effects on buyer’s NPD process, highlighting the benefits of supplier involvement, the barriers, the strategic aspects and industry aspects. These issues are addressed with a case study from the semiconductor industry. Besides helping to understand NPD in the semiconductor industry, the contribution and fi ndings of this work are clear: the results achieved confirm the findings of studies referred in the literature review, and confirm that the semiconductor industry sector requires a closer and more complex relationship structure with suppliers, given the specificities and challenges of the sector, such as rapid technological changes, permanent innovation, global competition, reduction of cost and time-to-market cycle, increased capacity, among other. The main contribution of the paper to the scientific literature and to managers is the better understanding of the buyer-supplier relationships in NPD in the semiconductor industry.

Artificial Neural Network and Neutron Aplication in a Volume Fraction Calculation in Annular and Stratified Multiphase System

Multiphase flows, type oil–water-gas are very common among different industrial activities, such as chemical industries and petroleum extraction, and its measurements show some difficulties to be taken. Precisely determining the volume fraction of each one of the elements that composes a multiphase flow is very important in chemical plants and petroleum industries. This work presents a methodology able to determine volume fraction on Annular and Stratified multiphase flow system with the use of neutrons and artificial intelligence, using the principles of transmission/scattering of fast neutrons from a 241Am-Be source and measurements of point flow that are influenced by variations of volume fractions. The proposed geometries used on the mathematical model was used to obtain a data set where the thicknesses referred of each material had been changed in order to obtain volume fraction of each phase providing 119 compositions that were used in the simulation with MCNP-X –computer code based on Monte Carlo Method that simulates the radiation transport. An artificial neural network (ANN) was trained with data obtained using the MCNP-X, and used to correlate such measurements with the respective real fractions. The ANN was able to correlate the data obtained on the simulation with MCNP-X with the volume fractions of the multiphase flows (oil-water-gas), both in the pattern of annular flow as stratified, resulting in a average relative error (%) for each production set of: annular (air= 3.85; water = 4.31; oil=1.08); stratified (air=3.10, water 2.01, oil = 1.45). The method demonstrated good efficiency in the determination of each material that composes the phases, thus demonstrating the feasibility of the technique.

Wavelength converters based on four-wave mixing in semiconductor optical amplifiers for advanced modulation formats

Les convertisseurs de longueur d’onde sont essentiels pour la réalisation de réseaux de communications optiques à routage en longueur d’onde. Dans la littérature, les convertisseurs de longueur d’onde basés sur le mélange à quatre ondes dans les amplificateurs optiques à semi-conducteur constituent une solution extrêmement intéressante, et ce, en raison de leurs nombreuses caractéristiques nécessaires à l’implémentation de tels réseaux de communications. Avec l’émergence des systèmes commerciaux de détection cohérente, ainsi qu’avec les récentes avancées dans le domaine du traitement de signal numérique, il est impératif d’évaluer la performance des convertisseurs de longueur d’onde, et ce, dans le contexte des formats de modulation avancés. Les objectifs de cette thèse sont : 1) d’étudier la faisabilité des convertisseurs de longueur d’onde basés sur le mélange à quatre ondes dans les amplificateurs optiques à semi-conducteur pour les formats de modulation avancés et 2) de proposer une technique basée sur le traitement de signal numérique afin d’améliorer leur performance. En premier lieu, une étude expérimentale de la conversion de longueur d’onde de formats de modulation d’amplitude en quadrature (quadrature amplitude modulation - QAM) est réalisée. En particulier, la conversion de longueur d’onde de signaux 16-QAM à 16 Gbaud et 64-QAM à 5 Gbaud dans un amplificateur optique à semi-conducteur commercial est réalisée sur toute la bande C. Les résultats démontrent qu’en raison des distorsions non-linéaires induites sur le signal converti, le point d’opération optimal du convertisseur de longueur d’onde est différent de celui obtenu lors de la conversion de longueur d’onde de formats de modulation en intensité. En effet, dans le contexte des formats de modulation avancés, c’est le compromis entre la puissance du signal converti et les non-linéarités induites qui détermine le point d’opération optimal du convertisseur de longueur d’onde. Les récepteurs cohérents permettent l’utilisation de techniques de traitement de signal numérique afin de compenser la détérioration du signal transmis suite à sa détection. Afin de mettre à profit les nouvelles possibilités offertes par le traitement de signal numérique, une technique numérique de post-compensation des distorsions induites sur le signal converti, basée sur une analyse petit-signal des équations gouvernant la dynamique du gain à l’intérieur des amplificateurs optiques à semi-conducteur, est développée. L’efficacité de cette technique est démontrée à l’aide de simulations numériques et de mesures expérimentales de conversion de longueur d’onde de signaux 16-QAM à 10 Gbaud et 64-QAM à 5 Gbaud. Cette méthode permet d’améliorer de façon significative les performances du convertisseur de longueur d’onde, et ce, principalement pour les formats de modulation avancés d’ordre supérieur tel que 64-QAM. Finalement, une étude expérimentale exhaustive de la technique de post-compensation des distorsions induites sur le signal converti est effectuée pour des signaux 64-QAM. Les résultats démontrent que, même en présence d’un signal à bruité à l’entrée du convertisseur de longueur d’onde, la technique proposée améliore toujours la qualité du signal reçu. De plus, une étude du point d’opération optimal du convertisseur de longueur d’onde est effectuée et démontre que celui-ci varie en fonction des pertes optiques suivant la conversion de longueur d’onde. Dans un réseau de communication optique à routage en longueur d’onde, le signal est susceptible de passer par plusieurs étages de conversion de longueur d’onde. Pour cette raison, l’efficacité de la technique de post-compensation est démontrée, et ce pour la première fois dans la littérature, pour deux étages successifs de conversion de longueur d’onde de signaux 64-QAM à 5 Gbaud. Les résultats de cette thèse montrent que les convertisseurs de longueur d’ondes basés sur le mélange à quatre ondes dans les amplificateurs optiques à semi-conducteur, utilisés en conjonction avec des techniques de traitement de signal numérique, constituent une technologie extrêmement prometteuse pour les réseaux de communications optiques modernes à routage en longueur d’onde.