On Wilking's criterion for the Ricci flow

Wilking has recently shown that one can associate a Ricci flow invariant cone of curvature operators , which are nonnegative in a suitable sense, to every invariant subset . In this article we show that if is an invariant subset of such that is closed and denotes the cone of curvature operators which are positive in the appropriate sense then one of the two possibilities holds: (a) The connected sum of any two Riemannian manifolds with curvature operators in also admits a metric with curvature operator in (b) The normalized Ricci flow on any compact Riemannian manifold with curvature operator in converges to a metric of constant positive sectional curvature. We also point out that if is an arbitrary subset, then is contained in the cone of curvature operators with nonnegative isotropic curvature.

Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors

We theoretically analyze the performance of transition metal dichalcogenide (MX2) single wall nanotube (SWNT) surround gate MOSFET, in the 10 nm technology node. We consider semiconducting armchair (n, n) SWNT of MoS2, MoSe2, WS2, and WSe2 for our study. The material properties of the nanotubes are evaluated from the density functional theory, and the ballistic device characteristics are obtained by self-consistently solving the Poisson-Schrodinger equation under the non-equilibrium Green's function formalism. Simulated ON currents are in the range of 61-76 mu A for 4.5 nm diameter MX2 tubes, with peak transconductance similar to 175-218 mu S and ON/OFF ratio similar to 0.6 x 10(5)-0.8 x 10(5). The subthreshold slope is similar to 62.22 mV/decade and a nominal drain induced barrier lowering of similar to 12-15 mV/V is observed for the devices. The tungsten dichalcogenide nanotubes offer superior device output characteristics compared to the molybdenum dichalcogenide nanotubes, with WSe2 showing the best performance. Studying SWNT diameters of 2.5-5 nm, it is found that increase in diameter provides smaller carrier effective mass and 4%-6% higher ON currents. Using mean free path calculation to project the quasi-ballistic currents, 62%-75% reduction from ballistic values in drain current in long channel lengths of 100, 200 nm is observed.

Minimum uncertainty and entanglement

We address the question, does a system A being entangled with another system B, put any constraints on the Heisenberg uncertainty relation (or the Schrodinger-Robertson inequality)? We find that the equality of the uncertainty relation cannot be reached for any two noncommuting observables, for finite dimensional Hilbert spaces if the Schmidt rank of the entangled state is maximal. One consequence is that the lower bound of the uncertainty relation can never be attained for any two observables for qubits, if the state is entangled. For infinite-dimensional Hilbert space too, we show that there is a class of physically interesting entangled states for which no two noncommuting observables can attain the minimum uncertainty equality.

Transport across a junction of topological insulators and a superconductor

We study transport across a line junction lying between two orthogonal topological insulator surfaces and a superconductor which can have either s-wave (spin-singlet) or p-wave (spin-triplet) pairing symmetry. The junction can have three time-reversal invariant barriers on three sides. We compute the charge and the spin conductance across such a junction and study their behaviors as a function of the bias voltage applied across the junction and the three parameters used to characterize the barrier. We find that the presence of topological insulators and a superconductor leads to both Dirac- and Schrodinger-like features in charge and spin conductances. We discuss the effect of bound states on the superconducting side of the barrier on the conductance; in particular, we show that for triplet p-wave superconductors, such a junction may be used to determine the spin state of its Cooper pairs. Our study reveals that there is a nonzero spin conductance for some particular spin states of the triplet Cooper pairs; this is an effect of the topological insulators which break the spin rotation symmetry. Finally, we find an unusual satellite peak (in addition to the usual zero bias peak) in the spin conductance for p-wave symmetry of the superconductor order parameter.

Characterization of Birkhoff-James orthogonality

The Birkhoff-James orthogonality is a generalization of Hilbert space orthogonality to Banach spaces. We investigate this notion of orthogonality when the Banach space has more structures. We start by doing so for the Banach space of square matrices moving gradually to all bounded operators on any Hilbert space, then to an arbitrary C*-algebra and finally a Hilbert C*-module.

MINIMUM UNCERTAINTY AND ENTANGLEMENT

We address the question, does a system A being entangled with another system B, put any constraints on the Heisenberg uncertainty relation (or the Schrodinger-Robertson inequality)? We find that the equality of the uncertainty relation cannot be reached for any two noncommuting observables, for finite dimensional Hilbert spaces if the Schmidt rank of the entangled state is maximal. One consequence is that the lower bound of the uncertainty relation can never be attained for any two observables for qubits, if the state is entangled. For infinite-dimensional Hilbert space too, we show that there is a class of physically interesting entangled states for which no two noncommuting observables can attain the minimum uncertainty equality.

Performance Analysis of Strained Monolayer MoS2 MOSFET

We present a computational study on the impact of tensile/compressive uniaxial (epsilon(xx)) and biaxial (epsilon(xx) = epsilon(yy)) strain on monolayer MoS2, n-, and p-MOSFETs. The material properties like band structure, carrier effective mass, and the multiband Hamiltonian of the channel are evaluated using the density functional theory. Using these parameters, self-consistent Poisson-Schrodinger solution under the nonequilibrium Green's function formalism is carried out to simulate the MOS device characteristics. 1.75% uniaxial tensile strain is found to provide a minor (6%) ON current improvement for the n-MOSFET, whereas same amount of biaxial tensile strain is found to considerably improve the p-MOSFET ON currents by 2-3 times. Compressive strain, however, degrades both n-MOS and p-MOS devices performance. It is also observed that the improvement in p-MOSFET can be attained only when the channel material becomes indirect gap in nature. We further study the performance degradation in the quasi-ballistic long-channel regime using a projected current method.

Compositional hierarchical monitoring automaton construction for LTL

In this paper we give a compositional (or inductive) construction of monitoring automata for LTL formulas. Our construction is similar in spirit to the compositional construction of Kesten and Pnueli [5]. We introduce the notion of hierarchical Büchi automata and phrase our constructions in the framework of these automata. We give detailed constructions for all the principal LTL operators including past operators, along with proofs of correctness of the constructions.

Structure constants of beta deformed super Yang-Mills

We study the structure constants of the N = 1 beta deformed theory perturbatively and at strong coupling. We show that the planar one loop corrections to the structure constants of single trace gauge invariant operators in the scalar sector is determined by the anomalous dimension Hamiltonian. This result implies that 3 point functions of the chiral primaries of the theory do not receive corrections at one loop. We then study the structure constants at strong coupling using the Lunin-Maldacena geometry. We explicitly construct the supergravity mode dual to the chiral primary with three equal U(1) R-charges in the Lunin-Maldacena geometry. We show that the 3 point function of this supergravity mode with semi-classical states representing two other similar chiral primary states but with large U(1) charges to be independent of the beta deformation and identical to that found in the AdS(5) x S-5 geometry. This together with the one-loop result indicate that these structure constants are protected by a non-renormalization theorem. We also show that three point function of U(1) R-currents with classical massive strings is proportional to the R-charge carried by the string solution. This is in accordance with the prediction of the R-symmetry Ward identity.

Fractional Hilbert transform extensions and associated analytic signal construction

The analytic signal (AS) was proposed by Gabor as a complex signal corresponding to a given real signal. The AS has a one-sided spectrum and gives rise to meaningful spectral averages. The Hilbert transform (HT) is a key component in Gabor's AS construction. We generalize the construction methodology by employing the fractional Hilbert transform (FrHT), without going through the standard fractional Fourier transform (FrFT) route. We discuss some properties of the fractional Hilbert operator and show how decomposition of the operator in terms of the identity and the standard Hilbert operators enables the construction of a family of analytic signals. We show that these analytic signals also satisfy Bedrosian-type properties and that their time-frequency localization properties are unaltered. We also propose a generalized-phase AS (GPAS) using a generalized-phase Hilbert transform (GPHT). We show that the GPHT shares many properties of the FrHT, in particular, selective highlighting of singularities, and a connection with Lie groups. We also investigate the duality between analyticity and causality concepts to arrive at a representation of causal signals in terms of the FrHT and GPHT. On the application front, we develop a secure multi-key single-sideband (SSB) modulation scheme and analyze its performance in noise and sensitivity to security key perturbations. (C) 2013 Elsevier B.V. All rights reserved.

On the images of Sobolev spaces under the heat kernel transform on the Heisenberg group

The aim of this paper is to obtain certain characterizations for the image of a Sobolev space on the Heisenberg group under the heat kernel transform. We give three types of characterizations for the image of a Sobolev space of positive order H-m (H-n), m is an element of N-n, under the heat kernel transform on H-n, using direct sum and direct integral of Bergmann spaces and certain unitary representations of H-n which can be realized on the Hilbert space of Hilbert-Schmidt operators on L-2 (R-n). We also show that the image of Sobolev space of negative order H-s (H-n), s(> 0) is an element of R is a direct sum of two weighted Bergman spaces. Finally, we try to obtain some pointwise estimates for the functions in the image of Schwartz class on H-n under the heat kernel transform. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Performance analysis of boron nitride embedded armchair graphene nanoribbon metal-oxide-semiconductor field effect transistor with Stone Wales defects

We study the performance of a hybrid Graphene-Boron Nitride armchair nanoribbon (a-GNR-BN) n-MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p + 1, and 3p + 2 of a-GNR-BN with BN atoms embedded on either side (2, 4, and 6 BN) on the GNR. Material properties like band gap, effective mass, and density of states of these H-passivated structures are evaluated using the Density Functional Theory. Using these material parameters, self-consistent Poisson-Schrodinger simulations are carried out under the Non Equilibrium Green's Function formalism to calculate the ballistic n-MOSFET device characteristics. For a hybrid nanoribbon of width similar to 5 nm, the simulated ON current is found to be in the range of 265 mu A-280 mu A with an ON/OFF ratio 7.1 x 10(6)-7.4 x 10(6) for a V-DD = 0.68 V corresponding to 10 nm technology node. We further study the impact of randomly distributed Stone Wales (SW) defects in these hybrid structures and only 2.5% degradation of ON current is observed for SW defect density of 3.18%. (C) 2014 AIP Publishing LLC.

Boosting Higgs CP properties via VH production at the Large Hadron Collider

We consider ZH and WH production at the Large Hadron Collider, where the Higgs decays to a b (b) over bar pair. We use jet substructure techniques to reconstruct the Higgs boson and construct angular observables involving leptonic decay products of the vector bosons. These efficiently discriminate between the tensor structure of the HVV vertex expected in the Standard Model and that arising from possible new physics, as quantified by higher dimensional operators. This can then be used to examine the CP nature of the Higgs as well as CP mixing effects in the HZZ and HWW vertices separately. (C) 2014 Elsevier B.V.

Quantum simulation using fidelity-profile optimization

Experimental quantum simulation of a Hamiltonian H requires unitary operator decomposition (UOD) of its evolution unitary U = exp(-iHt) in terms of native unitary operators of the experimental system. Here, using a genetic algorithm, we numerically evaluate the most generic UOD (valid over a continuous range of Hamiltonian parameters) of the unitary operator U, termed fidelity-profile optimization. The optimization is obtained by systematically evaluating the functional dependence of experimental unitary operators (such as single-qubit rotations and time-evolution unitaries of the system interactions) to the Hamiltonian (H) parameters. Using this technique, we have solved the experimental unitary decomposition of a controlled-phase gate (for any phase value), the evolution unitary of the Heisenberg XY interaction, and simulation of the Dzyaloshinskii-Moriya (DM) interaction in the presence of the Heisenberg XY interaction. Using these decompositions, we studied the entanglement dynamics of a Bell state in the DM interaction and experimentally verified the entanglement preservation procedure of Hou et al. Ann. Phys. (N.Y.) 327, 292 (2012)] in a nuclear magnetic resonance quantum information processor.

Boundary perturbations and the Helmholtz equation in three dimensions

We propose an analytic perturbative scheme in the spirit of Lord Rayleigh's work for determining the eigenvalues of the Helmholtz equation in three dimensions inside an arbitrary boundary where the eigenfunction satisfies either the Dirichlet boundary condition or the Neumann boundary condition. Although numerous works are available in the literature for arbitrary boundaries in two dimensions, to the best of our knowledge the formulation in three dimensions is proposed for the first time. In this novel prescription, we have expanded the arbitrary boundary in terms of spherical harmonics about an equivalent sphere and obtained perturbative closed-form solutions at each order for the problem in terms of corrections to the equivalent spherical boundary for both the boundary conditions. This formulation is in parallel with the standard time-independent Rayleigh-Schrodinger perturbation theory. The efficacy of the method is tested by comparing the perturbative values against the numerically calculated eigenvalues for spheroidal, superegg and superquadric shaped boundaries. It is shown that this perturbation works quite well even for wide departure from spherical shape and for higher excited states too. We believe this formulation would find applications in the field of quantum dots and acoustical cavities.