RZ-DPSK transmission at 80 Gbit/s channel rate using in-line semiconductor optical amplifiers

We numerically demonstrate the feasibility of return-to-zero differential phase-shift keying transmission at 8.0 Gbit/s channel rate using cascaded in-line semiconductor optical amplifiers.

RZ-DPSK transmission at 80 Gbit/s channel rate using in-line semiconductor optical amplifiers

We numerically demonstrate the feasibility of return-to-zero differential phase-shift keying transmission at 80 Gbit/s channel rate using cascaded in-line semiconductor optical amplifiers.

Phase sensitive signal processing using semiconductor optical amplifiers

This paper examines recent progress in the use of semiconductor optical amplifiers for phase sensitive signal processing functions, a discussion of the world's first multi-wavelength regenerative wavelength conversion using semiconductor optical amplifiers for BPSK signals. OFC/NFOEC Technical Digest © 2013 OSA.

1.2-μm semiconductor disk laser frequency doubled with periodically poled lithium tantalate crystal

In this letter, we demonstrate an optically pumped semiconductor disk laser frequency doubled with a periodically poled lithium tantalate crystal. Crystals with various lengths were tested for intracavity frequency conversion. The semiconductor disk laser exploited GaInNAs-based active region with GaAsAlAs distributed Bragg mirror to produce emission at 1.2- μm wavelength. The frequency doubled power up to 760 mW at the wavelength of 610 nm was achieved with a 2-mm-long crystal. © 2010 IEEE.

Bessel beams from semiconductor light sources

We report on recent progress in the generation of non-diffracting (Bessel) beams from semiconductor light sources including both edge-emitting and surface-emitting semiconductor lasers as well as light-emitting diodes (LEDs). Bessel beams at the power level of Watts with central lobe diameters of a few to tens of micrometers were achieved from compact and highly efficient lasers. The practicality of reducing the central lobe size of the Bessel beam generated with high-power broad-stripe semiconductor lasers and LEDs to a level unachievable by means of traditional focusing has been demonstrated. We also discuss an approach to exceed the limit of power density for the focusing of radiation with high beam propagation parameter M2. Finally, we consider the potential of the semiconductor lasers for applications in optical trapping/tweezing and the perspectives to replace their gas and solid-state laser counterparts for a range of implementations in optical manipulation towards lab-on-chip configurations. © 2014 Elsevier Ltd.

Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

A diode-cladding-pumped mid-infrared passively Q-switched Ho3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 μ J with a pulse width of 1.68 μ s and signal-to-noise ratio (SNR) of ∼50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 μ m. To the best of our knowledge, this is the first 3 μ m region SESAM-based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers. © 2014 Astro Ltd.

Mode locking of semiconductor laser with curved waveguide and passive mode expander

Active mode locking is reported for a 1.55 μm semiconductor laser with a curved waveguide and passive mode expander, placed in a wavelength tunable external cavity. One facet with a very low reflectivity of 8×10−6 is achieved through a curved active region that tapers into an underlying passive waveguide, thus expanding the mode to give reduced divergence. 10 GHz pulses of 3.1 ps duration have been generated, with a linewidth of 0.81 nm.

Semiconductor optical amplifier-based nonlinear optical-loop mirror with feedback

The behavior of a semiconductor optical amplifier (SOA)-based nonlinear loop mirror with feedback has been investigated as a potential device for all-optical signal processing. In the feedback device, input signal pulses (ones) are injected into the loop, and amplified reflected pulses are fed back into the loop as switching pulses. The feedback device has two stable modes of operation - block mode, where alternating blocks of ones and zeros are observed, and spontaneous clock division mode, where halving of the input repetition rate is achieved. Improved models of the feedback device have been developed to study its performance in different operating conditions. The feedback device could be optimized to give a choice of either of the two stable modes by shifting the arrival time of the switching pulses at the SOA. Theoretically, it was found possible to operate the device at only tens of fJ switching pulse energies if the SOA is biased to produce very high gain in the presence of internal loss. The clock division regime arises from the combination of incomplete SOA gain recovery and memory of the startup sequence that is provided by the feedback. Clock division requires a sufficiently high differential phase shift per unit differential gain, which is related to the SOA linewidth enhancement factor.

Travelling-wave model of semiconductor optical amplifier based non-linear loop mirror

A travelling-wave model of a semiconductor optical amplifier based non-linear loop mirror is developed to investigate the importance of travelling-wave effects and gain/phase dynamics in predicting device behaviour. A constant effective carrier recovery lifetime approximation is found to be reasonably accurate (±10%) within a wide range of control pulse energies. Based on this approximation, a heuristic model is developed for maximum computational efficiency. The models are applied to a particular configuration involving feedback.

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

Simultaneous demultiplexing, data regeneration, and clock recovery with a single semiconductor optical amplifier-based nonlinear-optical loop mirror

We demonstrate simultaneous demultiplexing, data regeneration and clock recovery at 10Gbits/s, using a single semiconductor optical amplifier–based nonlinear-optical loop mirror in a phase-locked loop configuration.

Bistability and hysteresis in an optically injected two-section semiconductor laser

The effect of coherent single frequency injection on two-section semiconductor lasers is studied numerically using a model based on a set of delay differential equations. The existence of bistability between different continuous-wave and nonstationary regimes of operation is demonstrated in the case of sufficiently large linewidth enhancement factors. © 2014 American Physical Society.

Optical trapping with Bessel beams generated from semiconductor lasers

In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations.