Las empresas transnacionales y el comercio internacional de América Latina

Incluye Bibliografía

El proceso de acumulación y la debilidad de los actores

Incluye Bibliografía

La deuda externa de los países latinoamericanos

También en: Comercio Exterior, México, DF, v. 36, No 5, p. 382, mayo 1986 (78609); y en: U.S. Congress. House. Committee on Banking, Finance and Urban Affairs: The costs of foreign debt for the United States and the Third World, Washington, DC, GPO, 198

Colombia: capital público y productividad de la industria manufacturera

Incluye Bibliografía

La transferencia de tecnología en el sector minero: opciones para el Organismo Latinoamericano de Minería (OLAMI)

Incluye Bibliografía

El desarrollo de la minería con relación al origen del capital

Incluye Bibliografía

La deuda externa en Centroamérica

Incluye Bibliografía

Capital goods: size of markets, sectoral structure and demand prospects in Latin America

Includes bibliography

The transnational corporations and Latin America's international trade

Includes bibliography

The process of accumulation and the weakness of the protagonists

Includes bibliography

The external debt of the Latin American countries

También en: Comercio Exterior, México, DF, v. 36, No 5, p. 382, mayo 1986 (78609); y en: U.S. Congress. House. Committee on Banking, Finance and Urban Affairs: The costs of foreign debt for the United States and the Third World, Washington, DC

Technology transfer in the mining sector: options for the Latin American Mining Organization (OLAMI)

Includes bibliography

Mining development and the origin of capital

Includes bibliography

Photodetection with gate-controlled lateral BJTs from standard CMOS technology

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.

Principales problemas de la inserción internacional de América Latina y el Caribe

Incluye Bibliografía