982 resultados para Mathematical techniques


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结合纳米硬度技术测量各类薄膜和块体材料表层的纳米压痕硬度、弹性模量、断裂韧性、膜厚、微结构的弯曲变形,采用纳米划痕硬度技术测量各类薄膜和块体材料的粗糙度、临界附着力、摩擦系数、划痕横剖面.纳米硬度计是检测材料表层微米乃至几十纳米力学性能的先进仪器,可广泛应用于表面工程中的质量检测.

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In the framework of the two-continuum approach, using the matched asymptotic expansion method, the equations of a laminar boundary layer in mist flows with evaporating droplets were derived and solved. The similarity criteria controlling the mist flows were determined. For the flow along a curvilinear surface, the forms of the boundary layer equations differ from the regimes of presence and absence of the droplet inertia deposition. The numerical results were presented for the vapor-droplet boundary layer in the neighborhood of a stagnation point of a hot blunt body. It is demonstrated that, due to evaporation, a droplet-free region develops near the wall inside the boundary layer. On the upper edge of this region, the droplet radius tends to zero and the droplet number density becomes much higher than that in the free stream. The combined effect of the droplet evaporation and accumulation results in a significant enhancement of the heat transfer on the surface even for small mass concentration of the droplets in the free stream. 在双连续介质理论框架下,采用匹配渐进展开方法导出并求解了具有蒸发液滴的汽雾流中层流边界层方程,给出了控制汽雾流的相似判据。对于沿曲面的流动,边界层方程的形式取决于是否存在液滴的惯性沉积。给出了热钝体验点附近蒸汽。液滴边界层的数值计算结果。它们表明:由于蒸发,在边界层内近壁处形成了一个无液滴区域;在该区上边界处,液滴半径趋于零而液滴数密度急剧增高。液滴蒸发及聚集的联合效应造成了表面热流的显著增加,甚至在自由来流中液滴质量浓度很低时此效应依然存在。

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A multi-disciplinary team based at Heriot-Watt University and other Universities has been set up to tackle the design and manufacturing of lab-on-a-chip for industries as one of the demonstrators of the EPSRC Grand Challenge project "3D-Mintegration". The team focuses on the analysis of foetal genetic material extracted from maternal blood as a smart alternative to invasive prenatal testing such as amniocentesis. The first module of the microsystem envisaged achieves a separation of blood cells from plasma. This system permits the testing of different manufacturing techniques.

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An investigation concerning suitable termination techniques for 4H-SiC trench JFETs is presented. Field plates, p+ floating rings and junction termination extension techniques are used to terminate 1.2kV class PiN diodes. The fabricated PiN diodes evaluated here have a similar design to trench JFETs. Therefore, the conclusions for PiN diodes can be applied to JFET structures as well. Numerical simulations are also used to illustrate the effect of the terminations on the diodes' blocking mode behaviour.