GreedyDual-Join: Locality-Aware Buffer Management for Approximate Join Processing Over Data Streams

We investigate adaptive buffer management techniques for approximate evaluation of sliding window joins over multiple data streams. In many applications, data stream processing systems have limited memory or have to deal with very high speed data streams. In both cases, computing the exact results of joins between these streams may not be feasible, mainly because the buffers used to compute the joins contain much smaller number of tuples than the tuples contained in the sliding windows. Therefore, a stream buffer management policy is needed in that case. We show that the buffer replacement policy is an important determinant of the quality of the produced results. To that end, we propose GreedyDual-Join (GDJ) an adaptive and locality-aware buffering technique for managing these buffers. GDJ exploits the temporal correlations (at both long and short time scales), which we found to be prevalent in many real data streams. We note that our algorithm is readily applicable to multiple data streams and multiple joins and requires almost no additional system resources. We report results of an experimental study using both synthetic and real-world data sets. Our results demonstrate the superiority and flexibility of our approach when contrasted to other recently proposed techniques.

Buffer stocks are better stabilizers than quotas

Michael Pelcovits (1979, p. 307) recently showed that with an unstable foreign excess supply curve, either a fixed quota or a buffer stock program with a fixed tariff can be used to stabilize domestic price at a given level, and both policies 'will have the same effect on social welfare [so...t]he choice between [the two...] must then be made on the basis of administrative cost and feasibility'. However, he reached his conclusion by ranking the two policies on the basis of domestic welfare, and in this note we demonstrate with his same model that on the basis of foreign welfare the buffer stock is better than the quota. Thus, world welfre is higher under the buffer stock than under the quota. © 1981.

Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy

InAlN thin films and InAlN/GaN heterostructures have been intensively studied over recent years due to their applications in a variety of devices, including high electron mobility transistors (HEMTs). However, the quality of InAlN remains relatively poor with basic material and structural characteristics remain unclear.

Molecular beam epitaxy (MBE) is used to synthesize the materials for this research, as MBE is a widely used tool for semiconductor growth but has rarely been explored for InAlN growth. X-ray photoelectron spectroscopy (XPS) is used to determine the electronic and chemical characteristics of InAlN surfaces. This tool is used for the first time in application to MBE-grown InAlN and heterostructures for the characterization of surface oxides, the bare surface barrier height (BSBH), and valence band offsets (VBOs).

The surface properties of InAlN are studied in relation to surface oxide characteristics and formation. First, the native oxide compositions are studied. Then, methods enabling the effective removal of the native oxides are found. Finally, annealing is explored for the reliable growth of surface thermal oxides.

The bulk properties of InAlN films are studied. The unintentional compositional grading in InAlN during MBE growth is discovered and found to be affected by strain and relaxation. The optical characterization of InAlN using spectroscopy ellipsometry (SE) is also developed and reveals that a two-phase InAlN model applies to MBE-grown InAlN due to its natural formation of a nanocolumnar microstructure. The insertion of an AlN interlayer is found to mitigate the formation of this microstructure and increases mobility of whole structure by fivefold.

Finally, the synthesis and characterization of InAlN/GaN HEMT device structures are explored. The density and energy distribution of surface states are studied with relationships to surface chemical composition and surface oxide. The determination of the VBOs of InAlN/GaN structures with different In compositions are discussed at last.

Performance analysis of a register insertion ring with a variable size buffer

There has been a recent revival of interest in the register insertion (RI) protocol because of its high throughput and low delay characteristics. Several variants of the protocol have been investigated with a view to integrating voice and data applications on a single local area network (LAN). In this paper the performance of an RI ring with a variable size buffer is studied by modelling and simulation. The chief advantage of the proposed scheme is that an efficient but simple bandwidth allocation scheme is easily incorporated. Approximate formulas are derived for queue lengths, queueing times, and total end-to-end transfer delays. The results are compared with previous analyses and with simulation estimates. The effectiveness of the proposed protocol in ensuring fairness of access under conditions of heavy and unequal loading is investigated.

EVALUATION OF A FOAM BUFFER TARGET DESIGN FOR SPATIALLY UNIFORM ABLATION OF LASER-IRRADIATED PLASMAS

Experimental observations are presented demonstrating that the use of a gold-coated foam layer on the surface of a laser-driven target substantially reduces its hydrodynamic breakup during the acceleration phase. The data suggest that this results from enhanced thermal smoothing during the early-time imprint stage of the interaction. The target's kinetic energy and the level of parametric instability growth are shown to remain essentially unchanged from that of a conventionally driven target.