Single-photon detection using a quantum dot field effect transistor

A novel device for detection of single photons based on a GaAs/AlGaAs modulation doped field effect transistor (MODFET) which does not rely on avalanche processes is proposed. The optimal channel electron densities and quantum dot parameters for detection of single photons are discussed.

Characteristics of the spectral dynamics of picosecond modulated AlGaAs/GaAs injection lasers

Breakdown of the optical spectrum of a train of picosecond pulses into components with a distance which exceeds kT (200 cm-1 at λ = 955 nm and T = 300 K) is discovered for the first time in an injection laser. The effect may be caused by combined interaction between photons and phonons, with collective excitations in the degraded electron-hole GaAs plasma, and with the stream of drifting carriers in the active medium of the laser.

Model for quantum efficiency of guided mode plasmonic enhanced silicon Schottky detectors

Plasmonic enhanced Schottky detectors operating on the basis of the internal photoemission process are becoming an attractive choice for detecting photons with sub bandgap energy. Yet, the quantum efficiency of these detectors appears to be low compare to the more conventional detectors which are based on interband transitions in a semiconductor. Hereby we provide a theoretical model to predict the quantum efficiency of guided mode internal photoemission photodetector with focus on the platform of silicon plasmonics. The model is supported by numerical simulations and comparison to experimental results. Finally, we discuss approaches for further enhancement of the quantum efficiency.

alpha-tocopherol is essential for acquired chill-light tolerance in the cyanobacterium Synechocystis sp strain PCC 6803

Unlike Escherichia coli, the cyanobacterium Synechocystis sp. strain PCC 6803 is insensitive to chill (5 degrees C) in the dark but rapidly losses viability when exposed to chill in the light (100 mu mol photons m(-2) s(-1)). Preconditioning at a low temperature (15 degrees C) greatly enhances the chill-light tolerance of Synechocystis sp. strain PCC 6803. This phenomenon is called acquired chill-light tolerance (ACLT). Preconditioned wild-type cells maintained a substantially higher level of alpha-tocopherol after exposure to chill-light stress. Mutants unable to synthesize alpha-tocopherol, such as slr1736, slr1737, slr0089, and slr0090 mutants, almost completely lost ACLT. When exposed to chill without light, these mutants showed no or a slight difference from the wild type. When complemented, the slr0089 mutant regained its ACLT. Copper-regulated expression of slr0090 from P-petE controlled the level of et-tocopherol and ACLT. We conclude that alpha-tocopherol is essential for ACLT of Synechocystis sp. strain PCC 6803. The role of a-tocopherol in ACLT may be based largely on a nonantioxidant activity that is not possessed by other tocopherols or pathway intermediates.

Identification of a gene, ccr-1 (sll1242), required for chill-light tolerance and growth at 15 degrees C in Synechocystis sp PCC 6803

Synechocystis sp. PCC 6803 exposed to chill (5 degrees C)-light (100 mu mol photons m(-2) s(-1)) stress loses its ability to reinitiate growth. From a random insertion mutant library of Synechocystis sp. PCC 6803, a sll1242 mutant showing increased sensitivity to chill plus light was isolated. Mutant reconstruction and complementation with the wild-type gene confirmed the role of sll1242 in maintaining chill-light tolerance. At 15 degrees C, the autotrophic and mixotrophic growth of the mutant were both inhibited, paralleled by decreased photosynthetic activity. The expression of sll1242 was upregulated in Synechocystis sp. PCC 6803 after transfer from 30 to 15 degrees C at a photosynthetic photon flux density of 30 mu mol photons m(-2) S-1. sll1242, named ccr (cyanobacterial cold resistance gene)- 1, may be required for cold acclimation of cyanobacteria in light.

Effects of solar ultraviolet radiation on photosynthesis of the marine red tide alga Heterosigma akashiwo (Raphidophyceae)

In order to assess the short- and long-term impacts of UV radiation (LTVR, 280-400 nm) on the red tide alga, Heterosigma akashiwo, we exposed the cells to three different solar radiation treatments (PAB: 280-700 rim, PA: 320-700 nm, R 400-700 nm) under both solar and artificial radiation. A significant decrease in the effective quantum yield () during high irradiance periods (i.e., local noon) was observed, but the cells partially recovered during the evening hours. Exposure to high irradiances for 15, 30, and 60 min under a solar simulator followed by the recovery (8 h) under dark, 9 and 100 mu mol photons m(-2) s(-1) of PAR, highlighted the importance of the irradiance level during the recovery period. Regardless the radiation treatments, the highest recovery (both in rate and total Y) was found at a PAR irradiance of 9 mu mol photons m(-2) s(-1), while the lowest was observed at 100 mu mol photons m(-2) s(-1). In all experiments, PAR was responsible for most of the observed inhibition; nevertheless, the cells exposed only to PAR had the highest recovery in any condition, as compared to the other radiation treatments. In long-term experiments (10 days) using semi-continuous cultures, there was a significant increase of UV-absorbing compounds (UVabc) per cell from 1.2 to > 4 x 10(-6) mu g UVabc cell(-1) during the first 3-5 days of exposure to solar radiation. The highest concentration of UVabc was found in samples exposed in the PAB as compared to PA and P treatments. Growth rates (mu) mimic the behavior of UV-absorbing compounds, and during the first 5 days mu increased from < 0.2 to ca. 0.8, and stayed relatively constant at this value during the rest of the experiment. The inhibition of the Y decreased with increasing acclimation of cells. All our data indicates that H. akashiwo is a sensitive species, but was able acclimate relatively fast (3-5 days) synthesizing UV-absorbing compounds and thus reducing any impact either on photosystem 11 or on growth. (c) 2006 Published by Elsevier B.V.

Amorphous oxide semiconductor TFTs for displays and imaging

© 2013 IEEE. This paper reviews the mechanisms underlying visible light detection based on phototransistors fabricated using amorphous oxide semiconductor technology. Although this family of materials is perceived to be optically transparent, the presence of oxygen deficiency defects, such as vacancies, located at subgap states, and their ionization under illumination, gives rise to absorption of blue and green photons. At higher energies, we have the usual band-to-band absorption. In particular, the oxygen defects remain ionized even after illumination ceases, leading to persistent photoconductivity, which can limit the frame-rate of active matrix imaging arrays. However, the persistence in photoconductivity can be overcome through deployment of a gate pulsing scheme enabling realistic frame rates for advanced applications such as sensor-embedded display for touch-free interaction.

Photosynthetic characteristics of the economic brown seaweed Hizikia fusiforme (Sargassaceae, Phaeophyta), with special reference to its "leaf" and receptacle

Photosynthetic responses to irradiance and temperature of "leaves" and receptacles were compared in February ( vegetative stage) and May ( reproductive stage) in the seaweed, Hizikia fusiforme ( Harvey) Okamura (Sargassaceae, Phaeophyta) from Nanao Island, Shantou, China. Irradiance-saturated photosynthesis (P-max) was significantly higher in receptacles than in "leaves" on a fresh weight basis, and that of "leaves" was greater in May than in February at ambient seawater temperatures. The optimum temperature for P-max was 30 degrees C for both "leaves" and receptacles, being 5 - 10 degrees C higher than the ambient seawater temperature. The apparent photosynthetic efficiencies were greater in receptacles than in "leaves" within the tested temperature range of 10 - 40 degrees C. The irradiance for saturating photosynthesis for both "leaves" and receptacles was temperature-dependent, with the highest values ( about 200 mu mol photons m(-2) s(-1)) at 30 degrees C.

Culture of the terrestrial cyanobacterium, Nostoc flagelliforme (Cyanophyceae), under aquatic conditions

Both colonies and free-living cells of the terrestrial cyanobacterium, Nostoc flagelliforme (Berk. & Curtis) Bornet & Flahault, were cultured under aquatic conditions to develop the techniques for the cultivation and restoration of this endangered resource. The colonial filaments disintegrated with their sheaths ruptured in about 2 days without any desiccating treatments. Periodic desiccation played an important role in preventing the alga from decomposing, with greater delays to sheath rupture with a higher frequency of exposure to air. The bacterial numbers in the culture treated with seven periods of desiccation per day were about 50% less compared with the cultures without the desiccation treatment. When bacteria in the culture were controlled, the colonial filaments did not disintegrate and maintained the integrity of their sheath for about 20 days even without the desiccation treatments, indicating the importance of desiccation for N. flagelliforme to prevent them from being disintegrated by bacteria. On the other hand, when free-living cells obtained from crushed colonial filaments were cultured in liquid medium, they developed into single filaments with sheaths, within which multiple filaments were formed later on as a colony. Such colonial filaments were developed at 15, 25, and 30degreesC at either 20 or 60 mumol photons.m(-2).s(-1); colonies did not develop at 180 mumol photons.m(-2).s(-1), though this light level resulted in the most rapid growth of the cells. Conditions of 60 mumol photons.m(-2).s(-1) and 25degrees C appeared to result in the best colonial development and faster growth of the sheath-held colonies of N. flagelliforme when cultured indoor under aquatic conditions.

Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method

E2SiO5 thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5 at% based on Rutherford backscattering measurement in as-deposited Er-Si-O film. X-ray diffraction measurement revealed that Er2SiO5 crystalline structure was formed as sample treated at 1100 degrees C for 1 h in O-2 atmosphere. Through proper thermal treatment, the 1.53 mu m Er3+-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800 degrees C. Analysis of pump-power dependence of Er3+ PL intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 10(21) (photons/cm(2)/sec). Temperature-dependent photoluminescence (PL) of Er2SiO5 was studied and showed a weak thermal quenching factor of 2. Highly efficienct photoluminescence of Er2SiO5 films has been demonstrated with Er3+ concentration of 10(22)/cm(3), and it opens a promising way towards future Si-based light source for Si photonics. (C) 2009 Elsevier B.V. All rights reserved.

The impact of imperfect symmetry on band edge modes of a two-dimensional photonic crystal with square lattice

A theoretical analysis has been performed by means of the plane-wave expansion method to examine the dispersion properties of photons at high symmetry points of an InP based two-dimensional photonic crystal with square lattice. The Q factors are compared qualitatively. The mechanism of surface-emitting is due to the photon manipulation by periodic dielectric materials in terms of Bragg diffraction. A surface-emitting photonic crystal resonator is designed based on the phenomenon of slow light. Photonic crystal slabs with different unit cells are utilized in the simulation. The results indicate that the change of the air holes can affect the polarization property of the modes. So we can find a way to improve the polarization by reducing the symmetry of the structure.

Improved light extraction of GaN-based LEDs with nano-roughened p-GaN surfaces

p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present a relaxation of stress. The light extraction of the LEDs with nano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices. This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces.

Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress

We report a photoluminescence (PL) energy red-shift of single quantum dots (QDs) by applying an in-plane compressive uniaxial stress along the [110] direction at a liquid nitrogen temperature. Uniaxial stress has an effect not only on the confinement potential in the growth direction which results in the PL shift, but also on the cylindrical symmetry of QDs which can be reflected by the change of the full width at half maximum of PL peak. This implies that uniaxial stress has an important role in tuning PL energy and fine structure splitting of QDs.

Spin Relaxation of Electrons in Single InAs Quantum Dots

By using polarization-resolved photoluminescence spectra, we study the electron spin relaxation in single InAs quantum dots (QDs) with the configuration of positively charged excitons X+ (one electron, two holes). The spin relaxation rate of the hot electrons increases with the increasing energy of exciting photons. For electrons localized in QDs the spin relaxation is induced by hyperfine interaction with the nuclei. A rapid decrease of polarization degree with increasing temperature suggests that the spin relaxation mechanisms are mainly changed from the hyperfine interaction with nuclei into an electron-hole exchange interaction.

THz-field-induced electronic transmission step-structure for a quantum wire

We study theoretically the low-temperature electronic transport property of a straight quantum wire under the irradiation of a finite-range transversely polarized external terahertz (THz) electromagnetic (EM) field. Using the free-electron model and the scattering matrix approach, we show an unusual behaviour of the electronic transmission of this system. A sharp step-structure appears in the electronic transmission probability as the EM field strength increases to a threshold value when a coherent EM field is applied. We demonstrate that this effect physically comes from the inelastic scattering of electrons with lateral photons through intersubband transitions.