PHOTOLUMINESCENCE STUDY OF GAAS/ALGAAS QUANTUM-WELL HETEROSTRUCTURE INTERFACES

Photoluminescence (PL) is used to study the interface properties of GaAs/AlGaAs quantum well (QW) heterostructures prepared by molecular beam epitaxy with growth interruption (GI). The discrete luminescence lines observed for the sample with GI are assigned to the splitting of the heavy-hole exciton associated with heterointerface islands with the lateral size greater than exciton diameter and mean height less than one monolayer, and the spectra have the Gaussian lineshapes. The results strongly support the microroughness model. We also study the temperature dependence of the exciton energies and find that excitons are localized at the interface roughness at low temperature even in the sample with GI. The lateral size of the microroughness of the GI sample is estimated to be less than 5 nm from the exciton localization energy.

DIFFERENT INTERDIFFUSION CHARACTERISTICS BETWEEN AG/YBA2CU3O7-X AND AL/YBA2CU3O7-X CONTACT INTERFACES

The differences between the interdiffusion characteristics of Ag/YBa2Cu3O7-x and Al/YBa2Cu3O7-x contact interfaces have been revealed by secondary ion mass spectrometry (SIMS). The different electrical properties of Ag/YBa2Cu3O7-x and YBa2Cu3O7-x films after high temperature treatment are well understood by the SIMS results.

Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH-->1E and 1LH-->1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.

Ionic liquids Supported Growth of Highly Ordered Microdroplets Induced by Fluidic Leakage at Poly(dimethylsiloxane) Interfaces

"Fluidic leakage" caused by vacuum force at the reversible sealing poly(dimethylsiloxane) (PDMS) interfaces was converted to one useable avenue, which led to formation of highly ordered surfactant microdroplets functionalized with ionic liquids (ILs). Vacuum force is the prerequisite to lead constant microsolutions to diffuse to the PDMS interfaces. Imidazolium ions of ILs rendered structural rearrangement of the surfactant aggregates and the ordered droplets formation.

Directing single-walled carbon nanotubes to self-assemble at water/oil interfaces and facilitate electron transfer

Both the behavior and the general key factors for assembling flexible SWNT films at the water/oil interface were investigated; the electron transfer, one of the most fundamental chemical processes, at the SWNT-sandwiched water/oil interface was also firstly illustrated using scanning electrochemical microscopy.