Behaviour of the germ cell specific lamin through mammalian spermatogenesis as probed with monoclonal antibodies.

We had earlier identified a 60 kDa nuclear lamin protein (lamin(g)) unique to the germ cells of rat testis which was subsequently shown to be antigenically conserved in germ cells of grasshopper, rooster, frog and plants. We have now obtained eight monoclonal antibodies in mouse against this lamin(g) antigen. While all the eight Mabs reacted with lamin(g) antigen in an immunoblot analysis, only three Mabs (A(11)C(7), A(11)D(4), C1F7) showed strong reactivity in the immunofluorescence analysis of the germ cells. The Mabs A(11)C(7) and A(11)D(4) showed a slight cross-reactivity with rat liver lamin B. Indirect immunofluorescence analysis of pre-meiotic, meiotic and post-meiotic germ cells with Mabs have shown that while the lamin(g) is localized in the lamina structures of spermatogonia and round spermatids, it is localized to the phase dense regions of pachytene spermatocytes which is in conformity with our previous observations using rabbit polyclonal antibodies. The localization of the antigen in the germ cells was also confirmed by immunohistochemical staining of the thin sections of seminiferous tubules. By immunostaining the surface spread pachytene spermatocytes, the antigen was further localized to the telomeric ends of the paired homologous chromosomes. Using anti-somatic lamin B antibodies, we have also demonstrated the absence of somatic lamins in meiotic and post-meiotic germ cells. The lamina structure of pre-meiotic spermatogonial nucleus contains both somatic lamin B and lamin(g) as evidenced by immunofluorescence studies with two differently fluorochrome labelled anti-lamin B and anti-lamin(g) antibodies. The selective retention of lamin(g) in the pachytene spermatocytes is probably essential for anchoring the telomeric ends of the paired chromosomes to the inner nuclear membrane.

Copper( 11) Complexes of Novel Tripodal Ligands containing Phenolate and Benzimidazole/Pyridine Pendants: Synthesis, Structure, Spectra and Electrochemical Behaviour

Mononuclear copper(II) complexes of tri- and tetra-dentate tripodal ligands containing phenolic hydroxyl and benzimidazole or pyridine groups have been isolated. They are of the type (CuL(X)].nH2O, [CuL(H2O)]X.nH2O or [CuL].nH2O where X = Cl-, ClO4-, N3- or NCS- and n = 0-4. The electronic spectra of all the complexes exhibit a broad absorption band around 14000 cm-1 and the polycrystalline as well as the frozen-solution EPR spectra are axial, indicating square-based geometries. The crystal structure of [CuL(Cl)] [HL = (2-hydroxy-5-nitrobenzyl)bis(2-pyridyl-methyl)amine] revealed a square-pyramidal geometry around Cu(II). The mononuclear complex crystallises in the triclinic space group P1BAR with a = 6.938(1), b = 11.782(6), c = 12.678(3) angstrom and alpha = 114.56(3), beta = 92.70(2), gamma = 95.36(2)-degrees. The co-ordination plane is comprised of one tertiary amine and two pyridine nitrogens and a chloride ion. The phenolate ion unusually occupies the axial site, possibly due to the electron-withdrawing p-nitro group. The enhanced pi delocalisation involving the p-nitrophenolate donor elevates the E1/2 values. The spectral and electrochemical results suggest the order of donor strength as nitrophenolate < pyridine < benzimidazole in the tridentate and nitrophenolate < benzimidazole < pyridine in the tetradentate ligand complexes.

Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Polycrystalline strontium titanate (SrTiO3) films were prepared by a pulsed laser deposition technique on p-type silicon and platinum-coated silicon substrates. The films exhibited good structural and dielectric properties which were sensitive to the processing conditions. The small signal dielectric constant and dissipation factor at a frequency of 100 kHz were about 225 and 0.03 respectively. The capacitance-voltage (C-V) characteristics in metal-insulator-semiconductor structures exhibited anomalous frequency dispersion behavior and a hysteresis effect. The hysteresis in the C-V curve was found to be about 1 V and of a charge injection type. The density of interface states was about 1.79 x 10(12) cm(-2). The charge storage density was found to be 40 fC mu m(-2) at an applied electric field of 200 kV cm(-1). Studies on current-voltage characteristics indicated an ohmic nature at lower voltages and space charge conduction at higher voltages. The films also exhibited excellent time-dependent dielectric breakdown behavior.

A study of microstructure and wear behaviour of TiB2/Al metal matrix composites

The present paper deals with the study of microstructure and wear characteristics of TiB2 reinforced aluminium metal matrix composites (MMCs). Matrix alloys with 5, 10 and 15% of TiB2 were made using stir casting technique. Effect of sliding velocity on the wear behaviour and tribo-chemistry of the worn surfaces of both matrix and composites sliding against a EN24 steel disc has been investigated under dry conditions. A pin-on-disc wear testing machine was used to find the wear rate, in which EN24 steel disc was used as the counter face, loads of 10-60N in steps of 10N and speeds of 100, 200, 300, 400 and 500 rpm were employed. The results showed that the wear rate was increased with an increase in load and sliding speed for both the materials. However, a lower wear rate was obtained for MMCs when compared to the matrix alloys. The wear transition from slight to severe was presented at the critical applied loads. The transition loads for the MMCs were much higher than that of the matrix alloy. The transition loads were increased with increase in TiB2 and the same was decreased with the increase of sliding speeds. The SEM and EDS analyses were undertaken to demonstrate the effect of TiB2 particles on the wear mechanism for each conditions.

Effect of microstructure on the creep behaviour of Ti-24Al-11Nb

In this investigation, the influence of microstructure on the high temperature creep behaviour of Ti-24Al-11Nb alloy has been studied. Different microstructures are produced by devising suitable heat treatments from the beta phase field. Creep tests are conducted in the temperature range of 923-1113 K, over a wide stress range at each temperature, employing the impression creep technique. The creep behaviour is found tb be sensitive to the crystallographic texture as well as to the details of microstructure. Best creep resistance is shown when the microstructure contains smaller alpha(2) plates and a lower beta volume fraction. This can be understood in terms of the dislocation barriers offered by alpha(2) beta boundaries and the case of plastic flow in the beta phase at high temperatures.

Characterization of hot deformation behaviour of Zr---2.5Nb---0.5Cu using processing maps

The characteristics of hot deformation of beta-quenched Zr-2.5Nb-0.5Cu in the temperature range 650-1050 degrees C and in the strain rate range 0.001-100 s(-1) have been studied using hot compression testing. For this study, the approach of processing maps has been adopted and their interpretation done using the Dynamic Materials Model. The efficiency of power dissipation given by [2m/(m + 1)], where m is strain rate sensitivity, is plotted as a function of temperature and strain rate to obtain a processing map. The processing map for Zr-2.5Nb-0.5Cu within (alpha + beta) phase field showed a domain of dynamic recrystallization, occurring by shearing of alpha-platelets followed by spheroidization, with a peak efficiency of 48% at 750 degrees C and 0.001 s(-1). The stress-strain curves in this domain had features of continuous flow softening and all these are similar to that in Zr-2.5Nb alloy. In the beta-phase field, a second domain with a peak efficiency of 47% occurred at 1050 degrees C and 0.001 s(-1) and this domain is correlated with the superplasticity of beta-phase. The beta-deformation characteristics of this alloy are similar to that observed in pure beta-zirconium with large grain size. Analysis of flow instabilities using a continuum criterion revealed that the Zr-2.5Nb-0.5Cu exhibits flow localization at temperatures higher than 800 degrees C and strain rates higher than about 30 s(-1) and that the addition of copper to Zr-2.5Nb reduces its susceptibility to flow instability, particularly in the (alpha + beta) phase field.

Neural network modeling of associative memory: Beyond the Hopfield model

A number of neural network models, in which fixed-point and limit-cycle attractors of the underlying dynamics are used to store and associatively recall information, are described. In the first class of models, a hierarchical structure is used to store an exponentially large number of strongly correlated memories. The second class of models uses limit cycles to store and retrieve individual memories. A neurobiologically plausible network that generates low-amplitude periodic variations of activity, similar to the oscillations observed in electroencephalographic recordings, is also described. Results obtained from analytic and numerical studies of the properties of these networks are discussed.

Low cycle fatigue behaviour of a nitrogen modified 316L stainless steel at 823 K

Strain controlled low cycle fatigue tests on solution annealed nitrogen modified 316L stainless steel have been conducted in air at 823 K to ascertain the influence of strain rate and strain amplitude. Effect of strain rate was examined from 3x10(-5) s(-1) to 3 x 10(-2) at a fixed strain amplitude of +/- 0.6%. The influence of strain amplitude was evaluated between +/- 0.25 % and +/- 1.0% at a constant strain rate of 3x10(-3) s(-1). The cyclic stress response at all testing conditions is characterized by an initial hardening followed by saturation. Serrated flow, a characteristic feature of dynamic strain ageing (DSA) was seen at strain rates lower than 3x10(-3) s(-1). Fatigue life was found to decrease with decrease in strain rate. The reduction in fatigue resistance is attributed mainly to the detrimental effects associated with DSA.

A Comparative Study of Electrical Switching Behavior of Certain Tellurium based Chalcogenide Thin Films for Phase Change Memory (PCM) Applications

This work describes the electrical switching behavior of three telluride based amorphous chalcogenide thin film samples, Al-Te, Ge-Se-Te and Ge-Te-Si. These amorphous thin films are made using bulk glassy ingots, prepared by conventional melt quenching technique, using flash evaporation technique; while Al-Te sample has been coated in coplanar electrode geometry, Ge-Se-Te and Ge-Te-Si samples have been deposited with sandwich electrodes. It is observed that all the three samples studied, exhibit memory switching behavior in thin film form, with Ge-Te-Si sample exhibiting a faster switching characteristic. The difference seen in the switching voltages of the three samples studied has been understood on the basis of difference in device geometry and thickness. Scanning electron microscopic image of switched region of a representative Ge15Te81Si4 sample shows a structural change and formation of crystallites in the electrode region, which is responsible for making a conducting channel between the two electrodes during switching.

WOMM: A Weak Operational Memory Model

Memory models of shared memory concurrent programs define the values a read of a shared memory location is allowed to see. Such memory models are typically weaker than the intuitive sequential consistency semantics to allow efficient execution. In this paper, we present WOMM (abbreviation for Weak Operational Memory Model) that formally unifies two sources of weak behavior in hardware memory models: reordering of instructions and weakly consistent memory. We show that a large number of optimizations are allowed by WOMM. We also show that WOMM is weaker than a number of hardware memory models. Consequently, if a program behaves correctly under WOMM, it will be correct with respect to those hardware memory models. Hence, WOMM can be used as a formally specified abstraction of the hardware memory models. Moreover; unlike most weak memory models, WOMM is described using operational semantics, making it easy to integrate into a model checker for concurrent programs. We further show that WOMM has an important property - it has sequential consistency semantics for datarace-free programs.

Structure, Spectra and Redox Behaviour of Copper(11) Complexes of Bis( benzimidazoly1)diamine Ligands

The linear quadridentate ligand N,N'-bis(benzimidazoI-2-ylethyl)ethane-l,2-diamine (L') and its 1 - methylbenzimidazole analogue (L2) and homologues form 1 : 1 complexes with Cu(CIO,),; L' also forms complexes of the types CuL'X, where X = NO,, PF,, Br or CI and CuL'(X)Y where X = CI or Br and Y = CIO, or Br. Deep blue CuL1Br,*2H20 crystallizes in the monoclinic space group C2/c with Z = 4, a = 9.91 9(2), b = 16.626(3), c = 14.1 02(3) le\ and p = 94.39(2)". The structure was solved by Patterson and Fourier difference methods and refined by the least-squares technique to R = 0.064 for 2195 independent reflections with / > 1.50(/). The molecule lies on a two-fold axis symmetrically around Cu". The co-ordination around Cu" is found to be square planar with two amino nitrogens and two benzimidazole nitrogens forming the equatorial plane [CU-N 1.983(3) and 2.037(4) A]. The bromides are at longer distances [3.349(1) A] in axial sites. Ligand field and EPR spectra indicate that one bromide or chloride ion is axially co-ordinated to Cu" in [CuL1l2+. This ion exhibits quasi-reversible redox behaviour. Electrochemical studies of the dihalides in methanol have established the presence of [CuL'X,], [CuL'(X)]+ and [CuL'I2+ in equilibrium. In complexes with 565 [CuL4I2+ [L4 = N,Nbis( benzimidazol-2-ylmethyl)ethane-l,2-diamine] and 555 [CuL3] [L3 = N,N'-bis(1 -methylbenzimidazol- 2-ylmethyl)propane-l,3-diamine] chelate rings, Cull does not seem to lie in the N, square plane, as revealed by their low A values and irreversible electrochemical behaviour. The Cu"-Cu' redox potentials in methanol are in the order [CuL1I2+ < [CuL3I2+ < [CuL4I2+; this illustrates that sixmembered chelate rings are suitable to stabilize Cu", when CU-N 0 interactions are favourable.

Low electric field, easily reversible electrical set and reset processes in a Ge15Te83Si2 glass for phase change memory applications

We report here an easily reversible set-reset process in a new Ge15Te83Si2 glass that could be a promising candidate for phase change random access memory applications. The I-V characteristics of the studied sample show a comparatively low threshold electric field (E-th) of 7.3 kV/cm. Distinct differences in the type of switching behavior are achieved by means of controlling the on state current. It enables the observation of a threshold type for less than 0.7 mA beyond memory type (set) switching. The set and reset processes have been achieved with a similar magnitude of 1 mA, and with a triangular current pulse for the set process and a short duration rectangular pulse of 10 msec width for the reset operation. Further, a self-resetting effect is seen in this material upon excitation with a saw-tooth/square pulse, and their response of leading and trailing edges are discussed. About 6.5 x 10(4) set-reset cycles have been undertaken without any damage to the device. (C) 2011 American Institute of Physics. doi: 10.1063/1.3574659]