Biblioteca Digital

993 resultados para Alummium-silicon Alloy

Investigation of novel high voltage polycrystalline silicon TFTs

Relevância:

20.00% 20.00%

Publicador:

The kinetics of gas-phase lubrication in the orthogonal machining of an aluminium alloy

Relevância:

20.00% 20.00%

Publicador:

The kinetics of gas-phase lubrication in the orthogonal machining of an aluminium alloy

Relevância:

20.00% 20.00%

Publicador:

Thermally stimulated defect removal in hydrogenated amorphous silicon thin film transistors

Relevância:

20.00% 20.00%

Publicador:

The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics

Relevância:

20.00% 20.00%

Publicador:

The action of gaseous lubricants in the orthogonal machining of an aluminum alloy by titanium nitride coated tools

Relevância:

20.00% 20.00%

Publicador:

Characterisation of electronic and structural properties of thin silicon dioxide films by scanned probe microscopy

Relevância:

20.00% 20.00%

Publicador:

Posthydrogenation of low-pressure chemical-vapor-deposited amorphous silicon using a novel internal lamp system and its application to thin-film transistor fabrication

Relevância:

20.00% 20.00%

Publicador:

Surface features on a low-alloy steel exposed in a simulated fluidized-bed combustor environment

Relevância:

20.00% 20.00%

Publicador:

Defect pool in amorphous-silicon thin-film transistors

Relevância:

20.00% 20.00%

Publicador:

Bias-stress-induced creation and removal of dangling-bond states in amorphous silicon thin-film transistors

Relevância:

20.00% 20.00%

Publicador:

Scannint tunnelling microscopy of plasma- and photo-enhanced chemical vapour deposited hydrogenated amorphous silicon

Relevância:

20.00% 20.00%

Publicador:

Electron beam defined delamination and ablation of carbon-diamond thin films on silicon

Relevância:

20.00% 20.00%

Publicador:

Thermal bias annealing evidence for the defect pool in amorphous silicon thin-film transistors

Relevância:

20.00% 20.00%

Publicador:

A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions

Relevância:

20.00% 20.00%

Publicador:

«
1
2
...
55
56
57
58
59
60
61
...
66
67
»