995 resultados para semiconductor sensor


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A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability. © 2011 IEEE.

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Developments in Micro-Electro-Mechanical Systems (MEMS), wireless communication systems and ad-hoc networking have created new dimensions to improve asset management not only during the operational phase but throughout an asset's lifecycle based on using improved quality of information obtained with respect to two key aspects of an asset: its location and condition. In this paper, we present our experience as well as lessons learnt from building a prototype condition monitoring platform to demonstrate and to evaluate the use of COTS wireless sensor networks to develop a prototype condition monitoring platform with the aim of improving asset management by providing accurate and real-time information. © 2010 IEEE.

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The spinning off of Cambridge Semiconductor Ltd (Camsemi) from the High Voltage Microelectronics Lab at Cambridge University is discussed. The technology originated from Cambridge University and was subsequently developed and commercialized as PowerBrane by Camsemi. The paper also discusses the business model and the enabling financial factors that led to the formation of Camsemi as a fables IC company, including access to seed funding from University and the subsequent investments of venture capital in several rounds. © 2011 IEEE.

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A measurement system for magnetic fields or electric currents uses a single-core fluxgate, magneto-inductive or magneto-impedance device driven from a radio frequency excitation source. Flux nulling feedback circuitry is provided to maintain the core of the sensor at substantially zero net flux and improve the linearity and dynamic response of the sensor system. A high pass filter is provided for reducing the dc effects of the ohmic resistance of the coil and lead wires on the effectiveness of the flux nulling feedback.

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A measurement system for magnetic fields and electric currents uses a single-core fluxgate device driven with a radio frequency excitation source and is provided with a means to indicate saturation of the core of the sensor. A means is provided for detecting overload of the sensor as the core approaches continuous saturation using a pair of demodulators and a comparator.

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In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.© 2010 IEEE.