Fatores de virulência e infecção epitelial in vitro de biofilmes simples e mistos de Cndida albicans, Staphylococcus aureus sensível (MSSA) e resistente à meticilina (MRSA)

Pós-graduação em Reabilitação Oral - FOAR

Aplicação eletroanalítica de complexos oxo-manganês biomimetizadores de centros ativos enzimáticos na determinação de espécies de interesse analítico

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Quantificação eletroquímica de analitos de interesse ambiental e biológico, empregando novos materiais preparados a partir de silsesquioxanos funcionalizados

Pós-graduação em Ciência dos Materiais - FEIS

Elucidating the real-time Ag nanoparticle growth on alpha-Ag2WO4 during electron beam irradiation: experimental evidence and theoretical insights

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A combined experimental and theoretical study on the formation of ag filaments on beta-Ag2MoO4 induced by electron irradiation

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Direct preparation and characterization of copper pentacyanonitrosylferrate nanoparticles

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Fingerprints of short-range and long-range structure in BaZr1-xHfxO3 solid solutions: an experimental and theoretical study

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Experimental and theoretical study on the structure, optical properties, and growth of metallic silver nanostructures in Ag3PO4

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Structure, Morphology, and Optical Properties of (Cal(1-3x)Eu(2x)) WO4 Microcrystals

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Comparison among different pH values of Rhodamine B solution impregnated into mesoporous silica

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Caracterização de filmes de BaxSr1-xTiO3 Sintetizados pelo método hidrotermal assistido por micro-ondas e depositados por eletroforese

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Metalosupramoléculas discretas e Metal Organic Frameworks (MOFs) baseados em íons lantanídeos: design, síntese, caracterização e propriedades

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Nanoestruturas de GaN crescidas pelas técnicas de epitaxia por magnetron sputtering e epitaxia por feixe molecular

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Growth and Characterization of Silicon Carbide Thin Films Using a Nontraditional Hollow Cathode Sputtering Technique

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.

Bilayer graphene on h-BN substrate: investigating the breakdown voltage and tuning the bandgap by electric field

By performing density functional theory calculations we show that it is possible to make the electronic bandgap in bilayer graphene supported on hexagonal boron nitride (h-BN) substrates tunable. We also show that, under applied electric fields, it is possible to insert states from h-BN into the bandgap, which generate a conduction channel through the substrate making the system metallic. In addition, we verify that the breakdown voltage strongly depends on the number of h-BN layers. We also show that both the breakdown voltage and the bandgap tuning are independent of the h-BN stacking order.