Transistor current -- voltage relationships : a consideration of high voltage dc operation of junction transistors with special reference to avalanche multiplication and related phenomena /

"August 6, 1963"

Some investigations in the area of high voltage, high current D-C amplifiers /

Issued also as thesis (M.S.) University of Illinois.

High voltage thermionic converters. Prepared under Contract no. AF33(615)-1533

"Project no. 8173, Task no. 817305."

Investigation of current-voltage and flow characteristics of an electric discharge across the exit of the AFFDL 1-Mw arc air heater

"Sponsored by the Air Force Flight Dynamics Laboratory ... under Contract AF 33(615)-1835."

Safe operation of capacitance meters using high applied-bias voltage /

Includes bibliographical references (p. 49).

Critical voltage levels as the criterion for planning power systems: Poland.

Mode of access: Internet.

A versatile high-voltage bias supply for extended range MIS C(V) and G(V) measurements /

Includes bibliographical references (p. 61).

Operator's manual including basic issue items list : test set, generator, and voltage regulator, automotive (Allen Electric and Equipment Co. model 30-82) (4910-270-3780).

"April 1965."

Operator's manual : test set, generator, and voltage regulator, automotive, 6, 12, and 24 volt systems (Sun Electric Corp., model no. VAT-25) (4910-270-3780).

"August 1966."

Operator, organizational, direct support, and general support maintenance manual (including repair parts and special tools list and depot maintenance repair parts and special tools) : test set, generator and voltage regulator, automotive, 12-and 24-volt systems (Allen Electric and Equipment Company model no. 30-92) (4910-092-9136).

"15 October 1971."

Operator's manual for low voltage circuit testers.

"April 1975."

High voltage electrical safety orders.

Mode of access: Internet.

Crane, H. Richard "Dick" Experiments - High Voltage Accelerator

Glass Slide #11

Voltage control of exchange coupling in phosphorus doped silicon

Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These voltage biases create electro-static fields within the crystal substrate, perturbing the states of the donor electrons and thus altering the strength of the exchange interaction between them. We find that control gates of this kind can be used to either enhance or reduce the strength of the interaction, by an amount that depends both on the magnitude and orientation of the donor separation.