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La déficience intellectuelle affecte de 1 à 3% de la population mondiale, ce qui en fait le trouble cognitif le plus commun de l’enfance. Notre groupe à découvert que des mutations dans le gène SYNGAP1 sont une cause fréquente de déficience intellectuelle non-syndromique, qui compte pour 1-3% de l’ensemble des cas. À titre d’exemple, le syndrome du X fragile, qui est la cause monogénique la plus fréquente de déficience intellectuelle, compte pour environ 2% des cas. Plusieurs patients affectés au niveau de SYNGAP1 présentent également des symptômes de l’autisme et d’une forme d’épilepsie. Notre groupe a également montré que SYNGAP1 cause la déficience intellectuelle par un mécanisme d’haploinsuffisance. SYNGAP1 code pour une protéine exprimée exclusivement dans le cerveau qui interagit avec la sous-unité GluN2B des récepteurs glutamatergique de type NMDA (NMDAR). SYNGAP1 possède une activité activatrice de Ras-GTPase qui régule négativement Ras au niveau des synapses excitatrices. Les souris hétérozygotes pour Syngap1 (souris Syngap1+/-) présentent des anomalies de comportement et des déficits cognitifs, ce qui en fait un bon modèle d’étude. Plusieurs études rapportent que l’haploinsuffisance de Syngap1 affecte le développement cérébral en perturbant l’activité et la plasticité des neurones excitateurs. Le déséquilibre excitation/inhibition est une théorie émergente de l’origine de la déficience intellectuelle et de l’autisme. Cependant, plusieurs groupes y compris le nôtre ont rapporté que Syngap1 est également exprimé dans au moins une sous-population d’interneurones GABAergiques. Notre hypothèse était donc que l’haploinsuffisance de Syngap1 dans les interneurones contribuerait en partie aux déficits cognitifs et au déséquilibre d’excitation/inhibition observés chez les souris Syngap1+/-. Pour tester cette hypothèse, nous avons généré un modèle de souris transgéniques dont l’expression de Syngap1 a été diminuée uniquement dans les interneurones dérivés des éminences ganglionnaires médianes qui expriment le facteur de transcription Nkx2.1 (souris Tg(Nkx2,1-Cre);Syngap1). Nous avons observé une diminution des courants postsynaptiques inhibiteurs miniatures (mIPSCs) au niveau des cellules pyramidales des couches 2/3 du cortex somatosensoriel primaire (S1) et dans le CA1 de l’hippocampe des souris Tg(Nkx2,1-Cre);Syngap1. Ces résultats supportent donc l’hypothèse selon laquelle la perte de Syngap1 dans les interneurones contribue au déséquilibre d’excitation/inhibition. De manière intéressante, nous avons également observé que les courants postsynaptiques excitateurs miniatures (mEPSCs) étaient augmentés dans le cortex S1, mais diminués dans le CA1 de l’hippocampe. Par la suite, nous avons testé si les mécanismes de plasticité synaptique qui sous-tendraient l’apprentissage étaient affectés par l’haploinsuffisance de Syngap1 dans les interneurones. Nous avons pu montrer que la potentialisation à long terme (LTP) NMDAR-dépendante était diminuée chez les souris Tg(Nkx2,1-Cre);Syngap1, sans que la dépression à long terme (LTD) NMDAR-dépendante soit affectée. Nous avons également montré que l’application d’un bloqueur des récepteurs GABAA renversait en partie le déficit de LTP rapporté chez les souris Syngap1+/-, suggérant qu’un déficit de désinhibition serait présent chez ces souris. L’ensemble de ces résultats supporte un rôle de Syngap1 dans les interneurones qui contribue aux déficits observés chez les souris affectées par l’haploinsuffisance de Syngap1.

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The increasing interest in the interaction of light with electricity and electronically active materials made the materials and techniques for producing semitransparent electrically conducting films particularly attractive. Transparent conductors have found major applications in a number of electronic and optoelectronic devices including resistors, transparent heating elements, antistatic and electromagnetic shield coatings, transparent electrode for solar cells, antireflection coatings, heat reflecting mirrors in glass windows and many other. Tin doped indium oxide (indium tin oxide or ITO) is one of the most commonly used transparent conducting oxides. At present and likely well into the future this material offers best available performance in terms of conductivity and transmittivity combined with excellent environmental stability, reproducibility and good surface morphology. Although partial transparency, with a reduction in conductivity, can be obtained for very thin metallic films, high transparency and simultaneously high conductivity cannot be attained in intrinsic stoichiometric materials. The only way this can be achieved is by creating electron degeneracy in a wide bandgap (Eg > 3eV or more for visible radiation) material by controllably introducing non-stoichiometry and/or appropriate dopants. These conditions can be conveniently met for ITO as well as a number of other materials like Zinc oxide, Cadmium oxide etc. ITO shows interesting and technologically important combination of properties viz high luminous transmittance, high IR reflectance, good electrical conductivity, excellent substrate adherence and chemical inertness. ITO is a key part of solar cells, window coatings, energy efficient buildings, and flat panel displays. In solar cells, ITO can be the transparent, conducting top layer that lets light into the cell to shine the junction and lets electricity flow out. Improving the ITO layer can help improve the solar cell efficiency. A transparent ii conducting oxide is a material with high transparency in a derived part of the spectrum and high electrical conductivity. Beyond these key properties of transparent conducting oxides (TCOs), ITO has a number of other key characteristics. The structure of ITO can be amorphous, crystalline, or mixed, depending on the deposition temperature and atmosphere. The electro-optical properties are a function of the crystallinity of the material. In general, ITO deposited at room temperature is amorphous, and ITO deposited at higher temperatures is crystalline. Depositing at high temperatures is more expensive than at room temperature, and this method may not be compatible with the underlying devices. The main objective of this thesis work is to optimise the growth conditions of Indium tin oxide thin films at low processing temperatures. The films are prepared by radio frequency magnetron sputtering under various deposition conditions. The films are also deposited on to flexible substrates by employing bias sputtering technique. The films thus grown were characterised using different tools. A powder x-ray diffractometer was used to analyse the crystalline nature of the films. The energy dispersive x-ray analysis (EDX) and scanning electron microscopy (SEM) were used for evaluating the composition and morphology of the films. Optical properties were investigated using the UVVIS- NIR spectrophotometer by recording the transmission/absorption spectra. The electrical properties were studied using vander Pauw four probe technique. The plasma generated during the sputtering of the ITO target was analysed using Langmuir probe and optical emission spectral studies.

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There is an increasing demand for renewable energies due to the limited availability of fossil and nuclear fuels and due to growing environmental problems. Photovoltaic (PV) energy conversion has the potential to contribute significantly to the electrical energy generation in the future. Currently, the cost for photovoltaic systems is one of the main obstacles preventing production and application on a large scale. The photovoltaic research is now focused on the development of materials that will allow mass production without compromising on the conversion efficiencies. Among important selection criteria of PV material and in particular for thin films, are a suitable band gap, high absorption coefficient and reproducible deposition processes capable of large-volume and low cost production. The chalcopyrite semiconductor thin films such as Copper indium selenide and Copper indium sulphide are the materials that are being intensively investigated for lowering the cost of solar cells. Conversion efficiencies of 19 % have been reported for laboratory scale solar cell based on CuInSe2 and its alloys. The main objective of this thesis work is to optimise the growth conditions of materials suitable for the fabrication of solar cell, employing cost effective techniques. A typical heterojunction thin film solar cell consists of an absorber layer, buffer layer and transparent conducting contacts. The most appropriate techniques have been used for depositing these different layers, viz; chemical bath deposition for the window layer, flash evaporation and two-stage process for the absorber layer, and RF magnetron sputtering for the transparent conducting layer. Low cost experimental setups were fabricated for selenisation and sulphurisation experiments, and the magnetron gun for the RF sputtering was indigenously fabricated. The films thus grown were characterised using different tools. A powder X-ray diffractometer was used to analyse the crystalline nature of the films. The energy dispersive X-ray analysis (EDX) and scanning electron microscopy i (SEM) were used for evaluating the composition and morphology of the films. Optical properties were investigated using the UV-Vis-NIR spectrophotometer by recording the transmission/absorption spectra. The electrical properties were studied using the two probe and four probe electrical measurements. Nature of conductivity of the films was determined by thermoprobe and thermopower measurements. The deposition conditions and the process parameters were optimised based on these characterisations.

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The direction dependant wavelength selective transmission mechanism in poly (methyl methacrylate)(PMMA) rods doped with C 540 dye and C 540:Rh.B dye mixture as a combination has been investigated. When a polished slice of pure C 540 doped polymer rod was used side by side with a C540:Rh B doped rod with acceptor concentration [A] = 7x10-4 m/l , we could notice more than 100% change in the transmitted intensity along opposite directions at the C 540, Rh B emission and the excitation wavelengths . A blue high bright LED emitting at a peak wavelength 465nm was used as the excitation source.

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The direction dependant wavelength selective transmission mechanism in poly (methyl methacrylate)(PMMA) rods doped with C 540 dye and C 540:Rh.B dye mixture as a combination has been investigated. When a polished slice of pure C 540 doped polymer rod was used side by side with a C540:Rh B doped rod with acceptor concentration [A] = 7x10-4 m/l , we could notice more than 100% change in the transmitted intensity along opposite directions at the C 540, Rh B emission and the excitation wavelengths . A blue high bright LED emitting at a peak wavelength 465nm was used as the excitation source.

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The direction dependant wavelength selective transmission mechanism in poly (methyl methacrylate)(PMMA) rods doped with C 540 dye and C 540:Rh.B dye mixture as a combination has been investigated. When a polished slice of pure C 540 doped polymer rod was used side by side with a C540:Rh B doped rod with acceptor concentration [A] = 7x10-4 m/l , we could notice more than 100% change in the transmitted intensity along opposite directions at the C 540, Rh B emission and the excitation wavelengths . A blue high bright LED emitting at a peak wavelength 465nm was used as the excitation source.

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Using laser transmission, the characteristics of hydrodynamic turbulence is studied following one of the recently developed technique in nonlinear dynamics. The existence of deterministic chaos in turbulence is proved by evaluating two invariants viz. dimension of attractor and Kolmogorov entropy. The behaviour of these invariants indicates that above a certain strength of turbulence the system tends to more ordered states.

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Oxide free stable metallic nanofluids have the potential for various applications such as in thermal management and inkjet printing apart from being a candidate system for fundamental studies. A stable suspension of nickel nanoparticles of ∼5 nm size has been realized by a modified two-step synthesis route. Structural characterization by x-ray diffraction and transmission electron microscopy shows that the nanoparticles are metallic and are phase pure. The nanoparticles exhibited superparamagnetic properties. The magneto-optical transmission properties of the nickel nanofluid (Ni-F) were investigated by linear optical dichroism measurements. The magnetic field dependent light transmission studies exhibited a polarization dependent optical absorption, known as optical dichroism, indicating that the nanoparticles suspended in the fluid are non-interacting and superparamagnetic in nature. The nonlinear optical limiting properties of Ni-F under high input optical fluence were then analyzed by an open aperture z-scan technique. The Ni-F exhibits a saturable absorption at moderate laser intensities while effective two-photon absorption is evident at higher intensities. The Ni-F appears to be a unique material for various optical devices such as field modulated gratings and optical switches which can be controlled by an external magnetic field

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Reinforcement Learning (RL) refers to a class of learning algorithms in which learning system learns which action to take in different situations by using a scalar evaluation received from the environment on performing an action. RL has been successfully applied to many multi stage decision making problem (MDP) where in each stage the learning systems decides which action has to be taken. Economic Dispatch (ED) problem is an important scheduling problem in power systems, which decides the amount of generation to be allocated to each generating unit so that the total cost of generation is minimized without violating system constraints. In this paper we formulate economic dispatch problem as a multi stage decision making problem. In this paper, we also develop RL based algorithm to solve the ED problem. The performance of our algorithm is compared with other recent methods. The main advantage of our method is it can learn the schedule for all possible demands simultaneously.

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ZnO micro particles in the range 0.4-0.6 μm were synthesized by microwave irradiation method. The XRD analysis reveals that the sample is in the wurtzite phase with orientation along the (101) plane. SAED pattern of the sample reveals the single crystalline nature of the micro grains. TEM images show the formation of cylindrical shaped ZnO micro structures with hexagonal faces. The optical phonon modes were slightly shifted in the Raman spectrum,attributed to the presence of various crystalline defects and laser induced local heating at the grain boundaries. A broad transmission profile was observed in the FTIR spectrum from 1550-3400 cm-1 which falls in the atmospheric transparency window region. PL spectrum centered at 500 nm with a broad band in the region 420-570 nm comprised of different emission peaks attributed to transition between defect levels. Various emission levels in the sample were expliained with a band diagram

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Mikrooptische Filter sind heutzutage in vielen Bereichen in der Telekommunikation unersetzlich. Wichtige Einsatzgebiete sind aber auch spektroskopische Systeme in der Medizin-, Prozess- und Umwelttechnik. Diese Arbeit befasst sich mit der Technologieentwicklung und Herstellung von luftspaltbasierenden, vertikal auf einem Substrat angeordneten, oberflächenmikromechanisch hergestellten Fabry-Perot-Filtern. Es werden zwei verschiedene Filtervarianten, basierend auf zwei verschiedenen Materialsystemen, ausführlich untersucht. Zum einen handelt es sich dabei um die Weiterentwicklung von kontinuierlich mikromechanisch durchstimmbaren InP / Luftspaltfiltern; zum anderen werden neuartige, kostengünstige Siliziumnitrid / Luftspaltfilter wissenschaftlich behandelt. Der Inhalt der Arbeit ist so gegliedert, dass nach einer Einleitung mit Vergleichen zu Arbeiten und Ergebnissen anderer Forschergruppen weltweit, zunächst einige theoretische Grundlagen zur Berechnung der spektralen Reflektivität und Transmission von beliebigen optischen Schichtanordnungen aufgezeigt werden. Auß erdem wird ein kurzer theoretischer Ü berblick zu wichtigen Eigenschaften von Fabry-Perot-Filtern sowie der Möglichkeit einer mikromechanischen Durchstimmbarkeit gegeben. Daran anschließ end folgt ein Kapitel, welches sich den grundlegenden technologischen Aspekten der Herstellung von luftspaltbasierenden Filtern widmet. Es wird ein Zusammenhang zu wichtigen Referenzarbeiten hergestellt, auf denen diverse Weiterentwicklungen dieser Arbeit basieren. Die beiden folgenden Kapitel erläutern dann ausführlich das Design, die Herstellung und die Charakterisierung der beiden oben erwähnten Filtervarianten. Abgesehen von der vorangehenden Epitaxie von InP / GaInAs Schichten, ist die Herstellung der InP / Luftspaltfilter komplett im Institut durchgeführt worden. Die Herstellungsschritte sind ausführlich in der Arbeit erläutert, wobei ein Schwerpunktthema das trockenchemische Ä tzen von InP sowie GaInAs, welches als Opferschichtmaterial für die Herstellung der Luftspalte genutzt wurde, behandelt. Im Verlauf der wissenschaftlichen Arbeit konnten sehr wichtige technische Verbesserungen entwickelt und eingesetzt werden, welche zu einer effizienteren technologischen Herstellung der Filter führten und in der vorliegenden Niederschrift ausführlich dokumentiert sind. Die hergestellten, für einen Einsatz in der optischen Telekommunikation entworfenen, elektrostatisch aktuierbaren Filter sind aus zwei luftspaltbasierenden Braggspiegeln aufgebaut, welche wiederum jeweils 3 InP-Schichten von (je nach Design) 357nm bzw. 367nm Dicke aufweisen. Die Filter bestehen aus im definierten Abstand parallel übereinander angeordneten Membranen, die über Verbindungsbrücken unterschiedlicher Anzahl und Länge an Haltepfosten befestigt sind. Da die mit 357nm bzw. 367nm vergleichsweise sehr dünnen Schichten freitragende Konstrukte mit bis zu 140 nm Länge bilden, aber trotzdem Positionsgenauigkeiten im nm-Bereich einhalten müssen, handelt es sich hierbei um sehr anspruchsvolle mikromechanische Bauelemente. Um den Einfluss der zahlreichen geometrischen Strukturparameter studieren zu können, wurden verschiedene laterale Filterdesigns implementiert. Mit den realisierten Filter konnte ein enorm weiter spektraler Abstimmbereich erzielt werden. Je nach lateralem Design wurden internationale Bestwerte für durchstimmbare Fabry-Perot-Filter von mehr als 140nm erreicht. Die Abstimmung konnte dabei kontinuierlich mit einer angelegten Spannung von nur wenigen Volt durchgeführt werden. Im Vergleich zu früher berichteten Ergebnissen konnten damit sowohl die Wellenlängenabstimmung als auch die dafür benötigte Abstimmungsspannung signifikant verbessert werden. Durch den hohen Brechungsindexkontrast und die geringe Schichtdicke zeigen die Filter ein vorteilhaftes, extrem weites Stopband in der Größ enordnung um 550nm. Die gewählten, sehr kurzen Kavitätslängen ermöglichen einen freien Spektralbereich des Filters welcher ebenfalls in diesen Größ enordnungen liegt, so dass ein weiter spektraler Einsatzbereich ermöglicht wird. Während der Arbeit zeigte sich, dass Verspannungen in den freitragenden InPSchichten die Funktionsweise der mikrooptischen Filter stark beeinflussen bzw. behindern. Insbesondere eine Unterätzung der Haltepfosten und die daraus resultierende Verbiegung der Ecken an denen sich die Verbindungsbrücken befinden, führte zu enormen vertikalen Membranverschiebungen, welche die Filtereigenschaften verändern. Um optimale Ergebnisse zu erreichen, muss eine weitere Verbesserung der Epitaxie erfolgen. Jedoch konnten durch den zusätzlichen Einsatz einer speziellen Schutzmaske die Unterätzung der Haltepfosten und damit starke vertikale Verformungen reduziert werden. Die aus der Verspannung resultierenden Verformungen und die Reaktion einzelner freistehender InP Schichten auf eine angelegte Gleich- oder Wechselspannung wurde detailliert untersucht. Mittels Weisslichtinterferometrie wurden lateral identische Strukturen verglichen, die aus unterschiedlich dicken InP-Schichten (357nm bzw. 1065nm) bestehen. Einen weiteren Hauptteil der Arbeit stellen Siliziumnitrid / Luftspaltfilter dar, welche auf einem neuen, im Rahmen dieser Dissertation entwickelten, technologischen Ansatz basieren. Die Filter bestehen aus zwei Braggspiegeln, die jeweils aus fünf 590nm dicken, freistehenden Siliziumnitridschichten aufgebaut sind und einem Abstand von 390nm untereinander aufweisen. Die Filter wurden auf Glassubstraten hergestellt. Der Herstellungsprozess ist jedoch auch mit vielen anderen Materialien oder Prozessen kompatibel, so dass z.B. eine Integration mit anderen Bauelemente relativ leicht möglich ist. Die Prozesse dieser ebenfalls oberflächenmikromechanisch hergestellten Filter wurden konsequent auf niedrige Herstellungskosten optimiert. Als Opferschichtmaterial wurde hier amorph abgeschiedenes Silizium verwendet. Der Herstellungsprozess beinhaltet die Abscheidung verspannungsoptimierter Schichten (Silizium und Siliziumnitrid) mittels PECVD, die laterale Strukturierung per reaktiven Ionenätzen mit den Gasen SF6 / CHF3 / Ar sowie Fotolack als Maske, die nasschemische Unterätzung der Opferschichten mittels KOH und das Kritisch-Punkt-Trocken der Proben. Die Ergebnisse der optischen Charakterisierung der Filter zeigen eine hohe Ü bereinstimmung zwischen den experimentell ermittelten Daten und den korrespondierenden theoretischen Modellrechnungen. Weisslichtinterferometermessungen der freigeätzten Strukturen zeigen ebene Filterschichten und bestätigen die hohe vertikale Positioniergenauigkeit, die mit diesem technologischen Ansatz erreicht werden kann.

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We present a new scheme to solve the time dependent Dirac-Fock-Slater equation (TDDFS) for heavy many electron ion-atom collision systems. Up to now time independent self consistent molecular orbitals have been used to expand the time dependent wavefunction and rather complicated potential coupling matrix elements have been neglected. Our idea is to minimize the potential coupling by using the time dependent electronic density to generate molecular basis functions. We present the first results for 16 MeV S{^16+} on Ar.

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We study cooperating distributed systems (CD-systems) of restarting automata that are very restricted: they are deterministic, they cannot rewrite, but only delete symbols, they restart immediately after performing a delete operation, they are stateless, and they have a read/write window of size 1 only, that is, these are stateless deterministic R(1)-automata. We study the expressive power of these systems by relating the class of languages that they accept by mode =1 computations to other well-studied language classes, showing in particular that this class only contains semi-linear languages, and that it includes all rational trace languages. In addition, we investigate the closure and non-closure properties of this class of languages and some of its algorithmic properties.

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It is known that cooperating distributed systems (CD-systems) of stateless deterministic restarting automata with window size 1 accept a class of semi-linear languages that properly includes all rational trace languages. Although the component automata of such a CD-system are all deterministic, in general the CD-system itself is not, as in each of its computations, the initial component and the successor components are still chosen nondeterministically. Here we study CD-systems of stateless deterministic restarting automata with window size 1 that are themselves completely deterministic. In fact, we consider two such types of CD-systems, the strictly deterministic systems and the globally deterministic systems.

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High-speed semiconductor lasers are an integral part in the implemen- tation of high-bit-rate optical communications systems. They are com- pact, rugged, reliable, long-lived, and relatively inexpensive sources of coherent light. Due to the very low attenuation window that exists in the silica based optical fiber at 1.55 μm and the zero dispersion point at 1.3 μm, they have become the mainstay of optical fiber com- munication systems. For the fabrication of lasers with gratings such as, distributed bragg reflector or distributed feedback lasers, etching is the most critical step. Etching defines the lateral dimmensions of the structure which determines the performance of optoelectronic devices. In this thesis studies and experiments were carried out about the exist- ing etching processes for InP and a novel dry etching process was de- veloped. The newly developed process was based on Cl2/CH4/H2/Ar chemistry and resulted in very smooth surfaces and vertical side walls. With this process the grating definition was significantly improved as compared to other technological developments in the respective field. A surface defined grating definition approach is used in this thesis work which does not require any re-growth steps and makes the whole fabrication process simpler and cost effective. Moreover, this grating fabrication process is fully compatible with nano-imprint lithography and can be used for high throughput low-cost manufacturing. With usual etching techniques reported before it is not possible to etch very deep because of aspect ratio dependent etching phenomenon where with increasing etch depth the etch rate slows down resulting in non-vertical side walls and footing effects. Although with our de- veloped process quite vertical side walls were achieved but footing was still a problem. To overcome the challenges related to grating defini- tion and deep etching, a completely new three step gas chopping dry etching process was developed. This was the very first time that a time multiplexed etching process for an InP based material system was demonstrated. The developed gas chopping process showed extra ordinary results including high mask selectivity of 15, moderate etch- ing rate, very vertical side walls and a record high aspect ratio of 41. Both the developed etching processes are completely compatible with nano imprint lithography and can be used for low-cost high-throughput fabrication. A large number of broad area laser, ridge waveguide laser, distributed feedback laser, distributed bragg reflector laser and coupled cavity in- jection grating lasers were fabricated using the developed one step etch- ing process. Very extensive characterization was done to optimize all the important design and fabrication parameters. The devices devel- oped have shown excellent performance with a very high side mode suppression ratio of more than 52 dB, an output power of 17 mW per facet, high efficiency of 0.15 W/A, stable operation over temperature and injected currents and a threshold current as low as 30 mA for almost 1 mm long device. A record high modulation bandwidth of 15 GHz with electron-photon resonance and open eye diagrams for 10 Gbps data transmission were also shown.