Evaluation of carbon dioxide blends with isopentane and propane as working fluids for organic Rankine cycles

The main theme of this paper is to study the flammability suppression of hydrocarbons by blending with carbon dioxide, and to evaluate these mixtures as possible working fluids in organic Rankine cycle for medium temperature concentrated solar power applications. The analysis takes into account inevitable irreversibilities in the turbine, the pump, and heat exchangers. While the isopentane + CO2 mixture suffers from high irreversibility mainly in the regenerator owing to a large temperature glide, the propane + CO2 mixture performs more or less the same as pure propane albeit with high cycle pressures. In general, large temperature glides at condensing pressures extend the heat recovery into the two-phase dome, which is an advantage. However, at the same time, the shift of the pinch point towards the warm end of the regenerator is found to be a major cause of irreversibility. In fact, as the number of carbon atoms in alkanes decreases, their blend with CO2 moves the pinch point to the colder end of the regenerator. This results in lower entropy generation in the regenerator and improved cycle efficiency of propane + CO2 mixtures. With this mixture, real cycle efficiencies of 15-18% are achievable at a moderate source temperature of 573 K. Applicability for a wide range of source temperatures is found to be an added advantage of this mixture.

Deformation mechanisms during superplastic testing of Ti-6Al-4V-0.1B alloy

Superplastic tensile tests on warm rolled and optimally annealed boron modified alloy Ti-6Al-4V-0.1B at a temperature of 850 degrees C and initial strain rate of 3 x 10(-4) s(-1) results in a higher elongation (similar to 500%) compared to the base alloy Ti-6Al-4V (similar to 400%). The improvement in superplasticity has been attributed to enhanced contribution from interfacial boundary sliding to the overall deformation for the boron modified alloy. The boundary sliding was facilitated by the starting microstructure which predominantly contains small equiaxed primary a grains with narrow size distribution. Dynamic processes such as coarsening and globularization of primary a phase occur under the test condition but do not significantly contribute to the observed difference in superplasticity between the two alloys. In spite of cavitation takes place around the TiB particles during deformation, they do not cause macroscopic cracking and early fracture by virtue of the cavities being extremely localized. Localized cavitation is found to correlate with increased material transfer due to faster diffusion.

Hardening and corrosion behaviour of copper added SUS 304H austenitic steels subjected to thermal cycling

This research was aimed at determining optimum Cu content for the alloy design of SUS 30411 austenitic steels having enhanced heat and corrosion resistance. Samples of the steel containing 1, 3, and 5 wt.% Cu were subjected to repeated heating and cooling to a temperature of 760 degrees C and to a maximum of 15 cycles. Hardness measurement and the corrosion behaviour in 1M NaCl solution were evaluated. The hardness increases with an increase in the number of heating cycles for the three compositions. The hardening response to the thermal cycles is however higher for the 1 wt.% Cu composition and decreases with an increase in the Cu wt.%. The SUS 30411 steel containing 3 wt.% Cu exhibited the least susceptibility to corrosion in the 1M NaCl solution irrespective of the number of heating cycles. The SUS 30411 steel containing 1 wt.% Cu was found to exhibit the highest susceptibility to corrosion for all heating cycles compared.

Continuous beam of laser-cooled Yb atoms

We demonstrate the launching of laser-cooled Yb atoms in a continuous atomic beam. The continuous cold beam has significant advantages over the more-common pulsed fountain, which was also demonstrated by us recently. The cold beam is formed in the following steps: i) atoms from a thermal beam are first Zeeman-slowed to a small final velocity; ii) the slowed atoms are captured in a two-dimensional magneto-optic trap (2D-MOT); and iii) atoms are launched continuously in the vertical direction using two sets of moving-molasses beams, inclined at +/- 15 degrees to the vertical. The cooling transition used is the strongly allowed S-1(0) -> P-1(1) transition at 399 nm. We capture about 7x10(6) atoms in the 2D-MOT, and then launch them with a vertical velocity of 13m/s at a longitudinal temperature of 125(6) mK. Copyright (C) EPLA, 2013

Segmental relaxations and crystallization-induced phase separation in PVDF/PMMA blends in the presence of surface-functionalized multiwall carbon nanotubes

Crystallization-induced phase separation and segmental relaxations in poly(vinylidene fluoride)/poly(methyl methacrylate) (PVDF/PMMA) blends was systematically investigated by melt-rheology and broadband dielectric spectroscopy in the presence of multiwall carbon nanotubes (MWNTs). Different functionalized MWNTs (amine, -NH2; acid, -COOH) were incorporated in the blends by melt-mixing above the melting temperature of PVDF, where the blends are miscible, and the crystallization induced phase separation was probed in situ by shear rheology. Interestingly, only -NH2 functionalized MWNTs (a-MWNTs) aided in the formation of beta-phase (trans-trans) crystals in PVDF, whereas both the neat blends and the blends with -COOH functionalized MWNTs (c-MWNTs) showed only alpha-phase (trans-gauche-trans-gauche') crystals as inferred from wide-angle X-ray diffraction (WXRD) and Fourier transform infrared (FTIR). Furthermore, blends with only a-MWNTs facilitated in heterogeneous nucleation in the blends manifesting in an increase in the calorimetric crystallization temperature and hence, augmented the theologically determined crystallintion induced phase separation temperature. The dielectric relaxations associated with the crystalline phase of PVDF (alpha(c)) was completely absent in the blends with a-MWNTs in contrast to neat blends and the blends with c-MWNTs in the dielectric loss spectra. The relaxations in the blends investigated here appeared to follow Havriliak-Negami (HN) empirical equations, and, more interestingly, the dynamic heterogeneity in the system could be mapped by an extra relaxation at higher frequency at the crystallization-induced phase separation temperature. The mean relaxation time (tau(HN)) was evaluated and observed to be delayed in the presence of MWNTs in the blends, more prominently in the case of blends with a-MWNTs. The latter also showed a significant increase in the dielectric relaxation strength (Delta epsilon). Electron microscopy and selective etching was used to confirm the localization of MWNTs in the amorphous phases of the interspherulitic regions as observed from scanning electron microscopy (SEM). The evolved crystalline morphology, during crystallization-induced phase separation, was observed to have a strong influence on the charge transport processes in the blends. These observations were further supported by the specific interactions (like dipole induced dipole interaction) between a-MWNTs and PVDF, as inferred from FTIR, and the differences in the crystalline morphology as observed from WXRD and polarized optical microscopy (POM).

Evolution of texture and microstructure during hot torsion of a magnesium alloy

A systematic study of the evolution of the microstructure and crystallographic texture during free end torsion of a single phase magnesium alloy Mg-3Al-0.3Mn (AM30) was carried out. The torsion tests were done at a temperature of 250 degrees C to different strain levels in order to examine the progressive evolution of the microstructure and texture. A detailed microstructural analysis was performed using the electron back-scattered diffraction technique. The observed microstructural features indicated the occurrence of continuous dynamic recovery and recrystallization, starting with the formation of subgrains and ending with recrystallized grains with high angle boundaries. Texture and microstructure evolution were analysed by decoupling the effects of imposed shear and of dynamic recrystallization. Microstructure was partitioned to separate the deformed grains from the recovered/recrystallized grains. The texture of the deformed part could be reproduced by viscoplastic self-consistent polycrystal simulations. Recovered/recrystallized grains were formed as a result of rotation of these grains so as to reach a low plastic energy state. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy

This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) substrates along with photovoltaic characteristics of GaN/p-Si heterojunctions fabricated with substrate nitridation and in absence of substrate nitridation. The high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopic studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN epifilms grown with silicon nitride buffer layer when compared with the sample grown without silicon nitride buffer layer. The low temperature PL shows a free excitonic (FX) emission peak at 3.51 eV at the temperature of 5 K with a very narrow line width of 35 meV. Temperature dependent PL spectra follow the Varshni equation well and peak energy blue shifts by similar to 63 meV from 300 to 5 K. Raman data confirms the strain free nature and reasonably good crystallinity of the films. The GaN/p-Si heterojunctions fabricated without substrate nitridation show a superior photovoltaic performance compared to the devices fabricated in presence of substrate nitridation. The discussions have been carried out on the junction properties. Such single junction devices exhibit a promising fill factor and conversion efficiency of 23.36 and 0.12 %, respectively, under concentrated AM1.5 illumination.

A model of coupled thermal, mechanical, and electrostatic field effects in III-N thin film heterostructures

A one-dimensional coupled multi-physics based model has been developed to accurately compute the effects of electrostatic, mechanical, and thermal field interactions on the electronic energy band structure in group III-nitrides thin film heterostructures. Earlier models reported in published literature assumes electro-mechanical field with uniform temperature thus neglecting self-heating. Also, the effects of diffused interface on the energy band structure were not studied. We include these effects in a self-consistent manner wherein the transport equation is introduced along with the electro-mechanical models, and the lattice structural variation as observed in experiments are introduced at the interface. Due to these effects, the electrostatic potential distribution in the heterostructure is altered. The electron and hole ground state energies decrease by 5% and 9%, respectively, at a relative temperature of 700 K, when compared with the results obtained from the previously reported electro-mechanical model assuming constant and uniform temperature distribution. A diffused interface decreases the ground state energy of electrons and holes by about 11% and 9%, respectively, at a relative temperature of 700 K when compared with the predictions based on uniform temperature based electro-mechanical model. (C) 2013 AIP Publishing LLC.

Novel co-evaporation approach for the growth of Sb doped SnO2 nanowires

Antimony doped tin oxide (Sb:SnO2) nanowires were grown by thermal and e-beam assisted co-evaporation of Sb and Sn in the presence of oxygen at a low substrate temperature of 450 degrees C. The field emission scanning electron microscopy study revealed that the nanowires had a length and diameter of 2-4 mu m and 20-60 nm respectively. Transmission electron microscopy study revealed the single crystalline nature of the nanowires; energy dispersive X-ray spectroscopy (EDS) and EDS mapping on the nanowires confirmed the presence of Sb doping in the nanowires. UV light detection study on the doped SnO2 nanowire films exhibited fast response and recovery time compared to undoped SnO2 nanowire films. This is an innovative and simple method to grow doped SnO2 nanowires.

Electrical switching in amorphous Si-Te-Ge thin films: Impact of input energy on crystallization process and switching parameters

Electrical switching studies on amorphous Si15Te74Ge11 thin film devices show interesting changes in the switching behavior with changes in the input energy supplied; the input energy determines the extent of crystallization in the active volume, which is reflected in the value of SET resistances. This in turn, determines the trend exhibited by switching voltage (V-t) for different input conditions. The results obtained are analyzed on the basis of the amount of Joule heat generated, which determines the temperature of the active volume. Depending on the final temperature, devices are rendered either in the intermediate state with a resistance of 5*10(2) Omega or the ON state with a resistance of 5*10(1) Omega. (C) 2013 Elsevier B.V. All rights reserved.

Post-deposition annealing influenced structural and electrical properties of Al/TiO2/Si gate capacitors

Titanium dioxide (TiO2) thin films are deposited on unheated p-Si (100) and quartz substrates by employing DC reactive magnetron sputtering technique. The effect of post-deposition annealing in air at temperatures in the range 673-973 K on the structural, electrical, and dielectric properties of the films was investigated. The chemical composition of the TiO2 films was analyzed with X-ray photoelectron spectroscopy. The surface morphology of the films was studied by atomic force microscope. The optical band gap of the as-deposited film was 3.50 eV, and it increased to 3.55 eV with the increase in annealing temperature to 773 K. The films annealed at higher temperature of 973 K showed the optical band gap of 3.43 eV. Thin film capacitors were fabricated with the MOS configuration of Al/TiO2/p-Si. The leakage current density of the as-deposited films was 1.2 x 10(-6) A/cm(2), and it decreased to 5.9 x 10(-9) A/cm(2) with the increase in annealing temperature to 973 K. These films showed high dielectric constant value of 36. (C) 2013 Elsevier Ltd. All rights reserved.

Rheology of A356 Alloy During Solidification Under Stirring

This work presents an experimental investigation on the rheology of A356 alloy in semisolid state using a high temperature Couette type viscometer. The molten liquid, resides in the annular space between the cylinders, is stirred and cooled continuously during experiments. The stirring results in fragmentation of dendrites which are transported into bulk liquid and form a semisolid slurry. The viscosity of the slurry is distinct in nature, which depends on microstructure of the suspended dendrites after coarsening. Hence, in the work, the variation of viscosity and microstructure is captured during cooling under different process parameters such as shear rate and cooling rate. Angular velocity of the inner cylinder and torque applied to stir the slurry are recorded to determine the apparent viscosity of the slurry. Temperature of the slurry is recorded to calculate the fraction of solids present in the slurry. For micrograph analysis, a vacuum quartz tube is used to remove the slurry-samples during experiments and they are quenched them in water.

RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition

Yttrium oxide (Y203) thin films have been deposited by radio frequency plasma assisted metal organic chemical vapor deposition (MOCVD) process using (2,2,6,6-tetramethy1-3,5-heptanedionate) yttrium (commonly known as Y(thd)3) precursor in a plasma of argon and oxygen gases at a substrate temperature of 350 C. The films have been deposited under influence of varying RF self-bias (-50 V to 175 V) on silicon, quartz, stainless steel and tantalum substrates. The deposited coatings are characterized by glancing angle X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and scanning electron microscopy (SEM). GIXRD and FTIR results indicate deposition of Y2 03 (BCC structure) in all cases. However, XPS results indicate nonstoichiometric cubic phase deposition on the surface of deposited films. The degree of nonstoichiometry varies with bias during deposition. Ellipsometry results indicate that the refractive index for the deposited films is varying from 1.70 to 1.83 that is typical for Y203. All films are transparent in the investigated wavelength range 300-1200 nm. SEM results indicate that the microstructure of the films is changing with applied bias. Results indicate that it is possible to deposit single phase cubic Y203 thin films at low substrate temperature by RF plasma MOCVD process. RF self-bias that decides about the energy of impinging ions on the substrates plays an important role in controlling the texture of deposited Y203 films on the substrates. Results indicate that to control the structure of films and its texture, it is important to control the bias on the substrate during deposition. The films deposited at high bias level show degradation in the crystallinity and reduction of thickness. (C) 2013 Elsevier B.V. All rights reserved.

Nanoscale compositional analysis of NiTi shape memory alloy films deposited by DC magnetron sputtering

The formation of surface oxide layer as well as compositional changes along the thickness for NiTi shape memory alloy thin films deposited by direct current magnetron sputtering at substrate temperature of 300 degrees C in the as-deposited condition as well as in the postannealed (at 600 degrees C) condition have been thoroughly studied by using secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, and scanning transmission electron microscopy-energy dispersive x-ray spectroscopy techniques. Formation of titanium oxide (predominantly titanium dioxide) layer was observed in both as-deposited and postannealed NiTi films, although the oxide layer was much thinner (8 nm) in as-deposited condition. The depletion of Ti and enrichment of Ni below the oxide layer in postannealed films also resulted in the formation of a graded microstructure consisting of titanium oxide, Ni3Ti, and B2 NiTi. A uniform composition of B2 NiTi was obtained in the postannealed film only below a depth of 200-250 nm from the surface. Postannealed film also exhibited formation of a ternary silicide (NixTiySi) at the film-substrate interface, whereas no silicide was seen in the as-deposited film. The formation of silicide also caused a depletion of Ni in the film in a region similar to 250-300 nm just above the film substrate interface. (C) 2013 American Vacuum Society.

Thermodynamics of NdRhO3 and phase relations in the system Nd-Rh-O

Phase equilibrium experiments indicate that NdRhO3 is the only ternary oxide in the system Nd-Rh-O at 1273 K; it has orthorhombically-distorted perovskite structure. By employing a solid-state electrochemical cell incorporating calcia-stabilized zirconia as the electrolyte, thermodynamic properties of NdRhO3 are determined. The standard Gibbs energy of formation of NdRhO3 from its component binary oxides in the temperature ranges from 900 to 1300 K can be expressed as: 1/2Rh(2)O(3) (ortho)+1/2Nd(2)O(3)(hex)=NdRhO3(ortho), Delta(f(o,x))G(0)/J mol(-1)( +/- 197) = - 66256+5.64 (T/K). The decomposition temperature of NdRhO3 computed from extrapolated thermodynamic data is 1803 (+/- 4) K in pure oxygen and 1692 (+/- 4) K in air at standard pressure. Oxygen partial pressure-composition diagram and three-dimensional chemical potential diagram at 1273 K are developed from thermodynamic data obtained in this study and auxiliary information from the literature. Equilibrium temperature-composition phase diagrams at constant oxygen partial pressures are also constructed. (C) 2013 Elsevier Ltd. All rights reserved.