999 resultados para Stress Fluctuation


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Clinical studies demonstrate that prenatal stress causes cognitive deficits and increases vulnerability to affective disorders in children and adolescents. The underlying mechanisms are not yet fully understood. Here, we reported that prenatal stress (10

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Prenatal stress can cause long-term effects on cognitive functions in offspring. Hippocampal synaptic plasticity, believed to be the mechanism underlying certain types of learning and memory, and known to be sensitive to behavioral stress, can be changed

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Recurrence is a key characteristic in the development of epilepsy. It remains unclear whether seizure recurrence is sensitive to postseizure stress. Here, tonic-clonic seizures were induced with a convulsive dose of pentylenetetrazole (PTZ), and acute seizure recurrence was evoked with a subconvulsive dose of the drug. We found that stress inhibited seizure recurrence when applied 30 minutes or 2 hours, but not 4 hours, after the tonic-clonic seizure. The time-dependent anti-recurrence effect of stress was mimicked by the stress hormone corticosterone and blocked by co-administration of mineralocorticoid and glucocorticoid receptor antagonists. Furthermore, in a PTZ-induced epileptic kindling model, corticosterone administered 30 minutes after each seizure decreased the extent of seizures both during the kindling establishment and in the following challenge test. These results provide novel insights into both the mechanisms of and therapeutic strategies for epilepsy. (C) 2010 Elsevier Inc. All rights reserved.

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A new approach is presented to resolve bias-induced metastability mechanisms in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). The post stress relaxation of threshold voltage (V(T)) was employed to quantitatively distinguish between the charge trapping process in gate dielectric and defect state creation in active layer of transistor. The kinetics of the charge de-trapping from the SiN traps is analytically modeled and a Gaussian distribution of gap states is extracted for the SiN. Indeed, the relaxation in V(T) is in good agreement with the theory underlying the kinetics of charge de-trapping from gate dielectric. For the TFTs used in this work, the charge trapping in the SiN gate dielectric is shown to be the dominant metastability mechanism even at bias stress levels as low as 10 V.

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Brittleness is the unintended, but inevitable consequence of producing a transparent ceramic for architectural applications such as the soda-lime glass. Its tensile strength is particularly sensitive to surface imperfections, such as that from natural weathering and malicious damage. Although a significant amount of testing of new glass has been carried out, there has been surprisingly little testing on weathered glass. Due to the variable nature of the causes of surface damage, the lack of data on weathered glass leads to a considerable degree of uncertainty in the long-term strength of exposed glass. This paper presents the results of recent tests on weathered annealed glass which has been exposed to natural weathering for more than 20 years. The tests include experimental investigations using the co-axial ring setup as well as optical and atomic force microscopy of the glass surfaces. The experimental data from these tests is subsequently used to extend existing fracture mechanics-based models to predict the strength of weathered glass. It is shown that using an automated approach based directly on finite element analysis results can give an increase in effective design strength in the order of 70 to 100% when compared to maximum stress methods. It is also shown that by combining microscopy and strength test results, it is possible to quantitatively characterise the damage on glass surfaces.