Modular high-current generator for electromagnetic forming with energy recovery

A 10 kJ electromagnetic forming (EMF) modulator with energy recovery based on two resonant power modules, each containing a 4.5 kV/30-kA silicon controlled rectifier, a 1.11-mF capacitor bank and an energy recovery circuit, working in parallel to allow a maximum actuator discharge current amplitude and rate of 50 kA and 2 kA/mu s was successfully developed and tested. It can be plugged in standard single phase 230 V/16 A mains socket and the circuit is able to recover up to 32% of its initial energy, reducing the charging time of conventional EMF systems by up to 68%.

Role of abrasive material on micro-abrasion wear tests

Micro-abrasion wear tests with ball-cratering configuration are widely used. Sources of variability are already studied by different authors and conditions for testing are parameterized by BS EN 1071-6: 2007 standard which refers silicon carbide as abrasive. However, the use of other abrasives is possible and allowed. In this work, ball-cratering wear tests were performed using four different abrasive particles of three dissimilar materials: diamond, alumina and silicon carbide. Tests were carried out under the same conditions on a steel plate provided with TiB2 hard coating. For each abrasive, five different test durations were used allowing understanding the initial wear phenomena. Composition and shape of abrasive particles were investigated by SEM and EDS. Scar areas were observed by optical and electronic microscopy in order to understand the wear effects caused by each of them. Scar geometry and grooves were analyzed and compared. Wear coefficient was calculated for each situation. It was observed that diamond particles produce well-defined and circular wear scars. Different silicon carbide particles presented dissimilar results as consequence of distinct particle shape and size distribution.

Demux devices based on A-SiC:H

In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.

Real-time fault injection using enhanced on-chip debug infrastructures

The rapid increase in the use of microprocessor-based systems in critical areas, where failures imply risks to human lives, to the environment or to expensive equipment, significantly increased the need for dependable systems, able to detect, tolerate and eventually correct faults. The verification and validation of such systems is frequently performed via fault injection, using various forms and techniques. However, as electronic devices get smaller and more complex, controllability and observability issues, and sometimes real time constraints, make it harder to apply most conventional fault injection techniques. This paper proposes a fault injection environment and a scalable methodology to assist the execution of real-time fault injection campaigns, providing enhanced performance and capabilities. Our proposed solutions are based on the use of common and customized on-chip debug (OCD) mechanisms, present in many modern electronic devices, with the main objective of enabling the insertion of faults in microprocessor memory elements with minimum delay and intrusiveness. Different configurations were implemented starting from basic Components Off-The-Shelf (COTS) microprocessors, equipped with real-time OCD infrastructures, to improved solutions based on modified interfaces, and dedicated OCD circuitry that enhance fault injection capabilities and performance. All methodologies and configurations were evaluated and compared concerning performance gain and silicon overhead.

Laser surfasse patterning using a Michelson interferometer and a femtosecond laser radiation

We report on a simple method to obtain surface gratings using a Michelson interferometer and femtosecond laser radiation. In the optical setup used, two parallel laser beams are generated using a beam splitter and then focused using the same focusing lens. An interference pattern is created in the focal plane of the focusing lens, which can be used to pattern the surface of materials. The main advantage of this method is that the optical paths difference of the interfering beams is independent of the distance between the beams. As a result, the fringes period can be varied without a need for major realignment of the optical system and the time coincidence between the interfering beams can be easily monitored. The potential of the method was demonstrated by patterning surface gratings with different periods on titanium surfaces in air.

Influence of the abrasive particles size in the micro-abrasion wear tests of TiAlSiN thin coatings

Ball rotating micro-abrasion tribometers are commonly used to carry out wear tests on thin hard coatings. In these tests, different kinds of abrasives were used, as alumina (Al2O3), silicon carbide (SiC) or diamond. In each kind of abrasive, several particle sizes can be used. Some studies were developed in order to evaluate the influence of the abrasive particle shape in the micro-abrasion process. Nevertheless, the particle size was not well correlated with the material removed amount and wear mechanisms. In this work, slurry of SiC abrasive in distilled water was used, with three different particles size. Initial surface topography was accessed by atomic force microscopy (AFM). Coating hardness measurements were performed with a micro-hardness tester. In order to evaluate the wear behaviour, a TiAlSiN thin hard film was used. The micro-abrasion tests were carried out with some different durations. The abrasive effect of the SiC particles was observed by scanning electron microscopy (SEM) both in the films (hard material) as in the substrate (soft material), after coating perforation. Wear grooves and removed material rate were compared and discussed.

High-performance flexible hybrid field-effect transistors based on cellulose fiber paper

IEEE Electron Device Letters, VOL. 29, NO. 9,

Effect of different dopant elements on the properties of ZnO thin films

Vacuum, Vol. 64

Síntese de um novo polímero conjugado e reticulável e sua aplicação em células fotovoltaicas

Trabalho Final de Mestrado para obtenção do Grau de Mestre em Engenharia Química e Biológica

PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique

Conventional film based X-ray imaging systems are being replaced by their digital equivalents. Different approaches are being followed by considering direct or indirect conversion, with the later technique dominating. The typical, indirect conversion, X-ray panel detector uses a phosphor for X-ray conversion coupled to a large area array of amorphous silicon based optical sensors and a couple of switching thin film transistors (TFT). The pixel information can then be readout by switching the correspondent line and column transistors, routing the signal to an external amplifier. In this work we follow an alternative approach, where the electrical switching performed by the TFT is replaced by optical scanning using a low power laser beam and a sensing/switching PINPIN structure, thus resulting in a simpler device. The optically active device is a PINPIN array, sharing both front and back electrical contacts, deposited over a glass substrate. During X-ray exposure, each sensing side photodiode collects photons generated by the scintillator screen (560 nm), charging its internal capacitance. Subsequently a laser beam (445 nm) scans the switching diodes (back side) retrieving the stored charge in a sequential way, reconstructing the image. In this paper we present recent work on the optoelectronic characterization of the PINPIN structure to be incorporated in the X-ray image sensor. The results from the optoelectronic characterization of the device and the dependence on scanning beam parameters are presented and discussed. Preliminary results of line scans are also presented. (C) 2014 Elsevier B.V. All rights reserved.

Influence of the substrate on structure and magnetic properties of Co-N thin films

Cubic cobalt nitride films were grown onto different single crystalline substrates Al2O3 (0 0 0 1) and (1 1 View the MathML source 0), MgO (1 0 0) and (1 1 0) and TiO2 (1 0 0) and (1 1 0). The films display low atomic densities compared with the bulk material, are ferromagnetic and have metallic electrical conductivity. X-ray diffraction and X-ray absorption fine structure confirm the cubic structure of the films and with RBS results indicate that samples are not homogeneous at the microscopic scale, coexisting Co4+xN nitride with nitrogen rich regions. The magnetization of the films decreases with increase of the nitrogen content, variation that is shown to be due to the decrease of the cobalt density, and not to a decrease of the magnetic moment per cobalt ion. The films are crystalline with a nitrogen deficient stoichiometry and epitaxial with orientation determined by the substrate.

Preliminary study on the production of functionally graded materials by friction stir processing

Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para obtenção do grau de Mestre em Engenharia Mecânica

Toroid inductor development for a SIC DC-DC converter up to 150kW, based on finite element method

Dissertação para a obtenção do grau de Mestre em Engenharia Electrotécnica Ramo de Energia

Projecto de um circuito conversor DC-DC para aplicações de “energy harvest”

Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para a obtenção do grau de Mestre em Engenharia Electrotécnica e de Computadores

Caracterização do “warpage” e sua variabilidade no processo produtivo de encapsulamento de circuitos integrados

Nos últimos anos a indústria de semicondutores, nomeadamente a produção de memórias, tem sofrido uma grande evolução. A necessidade de baixar custos de produção, assim como de produzir sistemas mais complexos e com maior capacidade, levou à criação da tecnologia WLP (Wafer Level Packaging). Esta tecnologia permite a produção de sistemas mais pequenos, simplificar o fluxo do processo e providenciar uma redução significativa do custo final do produto. A WLP é uma tecnologia de encapsulamento de circuitos integrados quando ainda fazem parte de wafers (bolachas de silício), em contraste com o método tradicional em que os sistemas são individualizados previamente antes de serem encapsulados. Com o desenvolvimento desta tecnologia, surgiu a necessidade de melhor compreender o comportamento mecânico do mold compound (MC - polímero encapsulante) mais especificamente do warpage (empeno) de wafers moldadas. O warpage é uma característica deste produto e deve-se à diferença do coeficiente de expansão térmica entre o silício e o mold compound. Este problema é observável no produto através do arqueamento das wafers moldadas. O warpage de wafers moldadas tem grande impacto na manufatura. Dependendo da quantidade e orientação do warpage, o transporte, manipulação, bem como, a processamento das wafers podem tornar-se complicados ou mesmo impossíveis, o que se traduz numa redução de volume de produção e diminuição da qualidade do produto. Esta dissertação foi desenvolvida na Nanium S.A., empresa portuguesa líder mundial na tecnologia de WLP em wafers de 300mm e aborda a utilização da metodologia Taguchi, no estudo da variabilidade do processo de debond para o produto X. A escolha do processo e produto baseou-se numa análise estatística da variação e do impacto do warpage ao longo doprocesso produtivo. A metodologia Taguchi é uma metodologia de controlo de qualidade e permite uma aproximação sistemática num dado processo, combinando gráficos de controlo, controlo do processo/produto, e desenho do processo para alcançar um processo robusto. Os resultados deste método e a sua correta implementação permitem obter poupanças significativas nos processos com um impacto financeiro significativo. A realização deste projeto permitiu estudar e quantificar o warpage ao longo da linha de produção e minorar o impacto desta característica no processo de debond. Este projecto permitiu ainda a discussão e o alinhamento entre as diferentes áreas de produção no que toca ao controlo e a melhoria de processos. Conseguiu–se demonstrar que o método Taguchi é um método eficiente no que toca ao estudo da variabilidade de um processo e otimização de parâmetros. A sua aplicação ao processo de debond permitiu melhorar ou a fiabilidade do processo em termos de garantia da qualidade do produto, como ao nível do aumento de produção.