Structural, electrical, and optical analysis of ion implanted semi-insulating InP

Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass. (C) 2004 American Institute of Physics.

Ion beam modification and analysis of metal/polymer bi-layer thin films

A set of varying-thickness Au-films were thermally evaporated onto poly(styrene-co-acrylonitrile) thin film surfaces. The Au/PSA bi-layer targets were then implanted with 50 keV N+ ions to a fluence of 1 × 1016 ions/cm2 to promote metal-to-polymer adhesion and to enhance their mechanical and electrical performance. Electrical conductivity measurements of the implanted Au/PSA thin films showed a sharp percolation behavior versus the pre-implant Au-film thickness with a percolation threshold near the nominal thickness of 44 Å. The electrical conductivity results are discussed along with the film microstructure and the elemental diffusion/mixing within the Au/PSA interface obtained by scanning electron microscopy (SEM) and ion beam analysis techniques (RBS and ERD).

Tailored conductivity in ion implanted polyetheretherketone

Ion implantation can be used to confer electrical conductivity upon conventional insulating polymers such as polyetheretherketone (PEEK). We have implanted PEEK films using three different types of ion implantation: conventional inert gas and metal ion implantation, and ion beam mixing. We have applied a number of analytical techniques to compare the chemical, structural and electrical properties of these films. The most effective means of increasing electrical conductivity appears to be via ion beam mixing of metals into the polymer, followed by metal ion implantation and finally, inert gas ion implantation. Our results suggest that in all cases, the conducting region corresponds to the implanted layer in the near surface to a depth of similar to750 Angstrom (ion beam mixed) to similar to5000 Angstrom (metal ion). This latter value is significantly higher than would be expected from a purely ballistic standpoint, and can only be attributed to thermal inter-diffusion. Our data also indicates that graphitic carbon is formed within the implant region by chain scission and subsequent cross-linking. All ion implanted samples retained their bulk mechanical properties, i.e. they remained flexible. The implant layers showed no signs of de-lamination. We believe this to be the first comparative study between different implantation techniques, and our results support the proposition that soft electronic circuitry and devices can be created by conductivity engineering with ion beams. (C) 2004 Elsevier B.V. All rights reserved.

Ion trap simulations of quantum fields in an expanding universe

We propose an experiment in which the phonon excitation of ion(s) in a trap, with a trap frequency exponentially modulated at rate kappa, exhibits a thermal spectrum with an Unruh temperature given by k(B)T=h kappa. We discuss the similarities of this experiment to the response of detectors in a de Sitter universe and the usual Unruh effect for uniformly accelerated detectors. We demonstrate a new Unruh effect for detectors that respond to antinormally ordered moments using the ion's first blue sideband transition.

Fast simulation of a quantum phase transition in an ion-trap realizable unitary map

We show that a specific implementation of a unitary map on multiple qubits in an ion trap is physically equivalent to a Hamiltonian evolution that belongs to the same universality class as the transverse Ising Hamiltonian. We suggest experimental signatures, and present numerical simulations for the case of four qubits.

Ion trap transducers for quantum electromechanical oscillators

An enduring challenge for contemporary physics is to experimentally observe and control quantum behavior in macroscopic systems. We show that a single trapped atomic ion could be used to probe the quantum nature of a mesoscopic mechanical oscillator precooled to 4 K, and furthermore, to cool the oscillator with high efficiency to its quantum ground state. The proposed experiment could be performed using currently available technology.

Thermal stability of ion-implanted ZnO

Zinc oxide single crystals implanted at room temperature with high-dose (1.4x10(17) cm(-2)) 300 keV As+ ions are annealed at 1000-1200 degrees C. Damage recovery is studied by a combination of Rutherford backscattering/channeling spectrometry (RBS/C), cross-sectional transmission electron microscopy (XTEM), and atomic force microscopy. Results show that such a thermal treatment leads to the decomposition and evaporation of the heavily damaged layer instead of apparent defect recovery and recrystallization that could be inferred from RBS/C and XTEM data alone. This study shows that heavily damaged ZnO has relatively poor thermal stability compared to as-grown ZnO which is a significant result and has implications for understanding results on thermal annealing of ion-implanted ZnO. (c) 2005 Americian Institute of Physics.

Atom counting in ultracold gases using photoionization and ion detection

We analyze photoionization and ion detection as a means of accurately counting ultracold atoms. We show that it is possible to count clouds containing many thousands of atoms with accuracies better than N-1/2 with current technology. This allows the direct probing of sub-Poissonian number statistics of atomic samples. The scheme can also be used for efficient single-atom detection with high spatiotemporal resolution. All aspects of a realistic detection scheme are considered, and we discuss experimental situations in which such a scheme could be implemented.

Superconductivity in metal-mixed ion-implanted polymer films

Ion implantation of normally insulating polymers offers an alternative to depositing conjugated organics onto plastic films to make electronic circuits. We used a 50 keV nitrogen ion beam to mix a thin 10 nm Sn/Sb alloy film into the subsurface of polyetheretherketone and report the low temperature properties of this material. We observed metallic behavior, and the onset of superconductivity below 3 K. There are strong indications that the superconductivity does not result from a residual thin film of alloy, but instead from a network of alloy grains coupled via a weakly conducting, ion-beam carbonized polymer matrix. (c) 2006 American Institute of Physics.

Investigation of the effects of low energy high dose ion bombardment in metals and compound semiconductors

The effect of low energy nitrogen molecular ion beam bombardment on metals and compound semiconductors has been studied, with the aim to investigate at the effects of ion and target properties. For this purpose, nitrogen ion implantation in aluminium, iron, copper, gold, GaAs and AIGaAs is studied using XPS and Angle Resolve XPS. A series of experimental studies on N+2 bombardment induced compositional changes, especially the amount of nitrogen retained in the target, were accomplished. Both monoenergetic implantation and non-monoenergetic ion implantation were investigated, using the VG Scientific ESCALAB 200D system and a d. c. plasma cell, respectively. When the samples, with the exception of gold, are exposed to air, native oxide layers are formed on the surfaces. In the case of monoenergetic implantation, the surfaces were cleaned using Ar+ beam bombardment prior to implantation. The materials were then bombarded with N2+ beam and eight sets of successful experiments were performed on each sample, using a rastered N2+ ion beam of energy of 2, 3, 4 and 5 keV with current densities of 1 μA/cm2 and 5 μA/cm22 for each energy. The bombarded samples were examined by ARXPS. After each complete implantation, XPS depth profiles were created using Ar+ beam at energy 2 ke V and current density 2 μA/cm2 . As the current density was chosen as one of the parameters, accurate determination of current density was very important. In the case of glow discharge, two sets of successful experiments were performed in each case, by exposing the samples to nitrogen plasma for the two conditions: at low pressure and high voltage and high pressure and low voltage. These samples were then examined by ARXPS. On the theoretical side, the major problem was prediction of the number of ions of an element that can be implanted in a given matrix. Although the programme is essentially on experimental study, but an attempt is being made to understand the current theoretical models, such as SATVAL, SUSPRE and TRIM. The experimental results were compared with theoretical predictions, in order to gain a better understanding of the mechanisms responsible. From the experimental results, considering possible experimental uncertainties, there is no evidence of significant variation in nitrogen saturation concentration with ion energy or ion current density in the range of 2-5 ke V, however, the retention characteristics of implantant seem to strongly depend on the chemical reactivity between ion species and target material. The experimental data suggests the presence of at least one thermal process. The discrepancy between the theoretical and experimental results could be the inability of the codes to account for molecular ion impact and thermal processes.

Characterisation of the plasma membrane subproteome of bloodstream form Trypanosoma brucei

Proteome analysis by conventional approaches is biased against hydrophobic membrane proteins, many of which are also of low abundance. We have isolated plasma membrane sheets from bloodstream forms of Trypanosoma brucei by subcellular fractionation, and then applied a battery of complementary protein separation and identification techniques to identify a large number of proteins in this fraction. The results of these analyses have been combined to generate a subproteome for the pellicular plasma membrane of bloodstream forms of T. brucei as well as a separate subproteome for the pellicular cytoskeleton. In parallel, we have used in silico approaches to predict the relative abundance of proteins potentially expressed by bloodstream form trypanosomes, and to identify likely polytopic membrane proteins, providing quality control for the experimentally defined plasma membrane subproteome. We show that the application of multiple high-resolution proteomic techniques to an enriched organelle fraction is a valuable approach for the characterisation of relatively intractable membrane proteomes. We present here the most complete analysis of a protozoan plasma membrane proteome to date and show the presence of a large number of integral membrane proteins, including 11 nucleoside/nucleobase transporters, 15 ion pumps and channels and a large number of adenylate cyclases hitherto listed as putative proteins.

Mechanisms of ion channel activation in primary cultured and clonal cell lines

The effects of hypotonic shock upon membrane C1 permeability of ROS 17/2.8 osteoblast-like cells was investigated using the patch-clamp technique. Hypotonic shock produced cell swelling that was accompanied by large amplitude, outwardly rectifying, currents that were active across the entire physiological range of membrane potentials (-80 to +100 mV). At strong depolarisations (> +50 mV) the currents exhibited time-dependent inactivation that followed a monoexponential time course. The currents were anion selective and exhibited a selectivity sequence of SCN- > I > Br- > Cl- > F- > gluconate. Current activation was unaffected by inhibitors of protein kinase (A (H-89) and tyrosine kinase (tyrphostin A25), and could not be mimicked by elevation of intracellular Ca2+ or activation of protein kinase C. Similarly, disruption of actin filaments by dihydrocytochalsin B, or generation of membrane tension by dipyridamole failed to elicit significant increases in cell chloride permeability. The mechanism of current activation is as yet undetermined. The currents were effectively inhibited by the chloride channel inhibitors NPPB and DIDS but resistant to DPC. A Cl- conductance with similar characteristics was found to be present in mouse primary cultured calvarial osteoblasts. The volume-sensitive Cl- current in ROS 17/2.8 cells was inhibited by arachidonic acid in two distinct phases. A rapid block that developed within 10 s, preceding a slower developing inhibitory phase that occurred approximately 90 s after onset of arachidonate superfusion. Arachidonic acid also induced kinetic modifications of the current which were evident as an acceleration of the time-dependent· inactivation exhibited at depolarised potentials. Inhibitors of cyclo-oxygenases, lipoxygenases and cytochrome P-4S0 were ineffectual against arachidonic acid's effects sugtgesting that arachidonic acid may elicit it's effects directly. Measurements of cell volume under hypotonic conditions showed that ROS 17/2,8 cells could effectively regulate their volume, However, effective inhibitors of the volume-sensitive CI" current drastically impaired this response suggesting that physiologically this current may have a vital role in cell volume regulation, In L6 skeletal myocytes, vasopressin was found to rapidiy hyperpolarise cells. This appears to occur as the result of activation of Ca2+ -sensitive K+ channels in a process dependent upon the presence of extracellular Ca2+.

Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures

We demonstrate that a controllable cracking can be realized in Si with a buried strain layer when hydrogen is introduced using traditional H-ion implantation techniques. However, H stimulated cracking is dependent on H projected ranges; cracking occurs along a Si0.8Ge0.2 strain layer only if the H projected range is shallower than the depth of the strained layer. The absence of cracking for H ranges deeper than the strain layer is attributed to ion-irradiation induced strain relaxation, which is confirmed by Rutherford-backscattering-spectrometry channeling angular scans. The study reveals the importance of strain in initializing continuous cracking with extremely low H concentrations.

Ion irradiation effects in nanocrystalline TiN coatings

Nitride materials and coatings have attracted extensive research interests for various applications in advanced nuclear reactors due to their unique combination of physical properties, including high temperature stability, excellent corrosion resistance, superior mechanical property and good thermal conductivity. In this paper, the ion irradiation effects in nanocrystalline TiN coatings as a function of grain size are reported. TiN thin films (thickness of 100 nm) with various grain sizes (8-100 nm) were prepared on Si substrates by a pulsed laser deposition technique. All the samples were irradiated with He ions to high fluences at room temperature. Transmission electron microscopy (TEM) and high resolution TEM on the ion-irradiated samples show that damage accumulation in the TiN films reduces as the grain size reduces. Electrical resistivity of the ion-irradiated films increases slightly compared with the as-deposited ones. These observations demonstrate a good radiation-tolerance property of nanocrystalline TiN films. © 2007 Elsevier B.V. All rights reserved.