Channel selective tunnelling through a nanographene assembly.

We report selective tunnelling through a nanographene intermolecular tunnel junction achieved via scanning tunnelling microscope tip functionalization with hexa-peri-hexabenzocoronene (HBC) molecules. This leads to an offset in the alignment between the energy levels of the tip and the molecular assembly, resulting in the imaging of a variety of distinct charge density patterns in the HBC assembly, not attainable using a bare metallic tip. Different tunnelling channels can be selected by the application of an electric field in the tunnelling junction, which changes the condition of the HBC on the tip. Density functional theory-based calculations relate the imaged HBC patterns to the calculated molecular orbitals at certain energy levels. These patterns bear a close resemblance to the π-orbital states of the HBC molecule calculated at the relevant energy levels, mainly below the Fermi energy of HBC. This correlation demonstrates the ability of an HBC functionalized tip as regards accessing an energy range that is restricted to the usual operating bias range around the Fermi energy with a normal metallic tip at room temperature. Apart from relating to molecular orbitals, some patterns could also be described in association with the Clar aromatic sextet formula. Our observations may help pave the way towards the possibility of controlling charge transport between organic interfaces.

Transient electrothermal simulation of power semiconductor devices

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.© 2010 IEEE.

Dynamic characterisation and longitudinal strength of swaged joints

Swaging is a cold working process involving plastic deformation of the work piece to change its shape. A swaged joint is a connection between two components whereby a swaging tool induces plastic deformation of the components at their junction to effectively bind them together. This is commonly used when welding or other standard joining techniques are not viable. Swaged joints can be found for example, in nuclear fuel assemblies to connect the edges of thin rectangular plates to a supporting structure or frame. The aim of this work is to find a model to describe the vibrational behaviour of a swaged joint and to estimate its strength in resisting a longitudinally applied load. The finite element method and various experimental rigs were used in order to find relationships between the natural frequencies of the plate, the joint stiffness and the force required to shift the plate against the restraining action of the swage connection. It is found that a swaged joint is dynamically equivalent to a simple support with the rotation elastically restrained and a small stiffness is enough to resist an important load. © 2011 Elsevier Ltd. All rights reserved.

Conduction bottleneck in silicon nanochain single electron transistors operating at room temperature

Single electron transistors are fabricated on single Si nanochains, synthesised by thermal evaporation of SiO solid sources. The nanochains consist of one-dimensional arrays of ~10nm Si nanocrystals, separated by SiO 2 regions. At 300 K, strong Coulomb staircases are seen in the drain-source current-voltage (I ds-V ds) characteristics, and single-electron oscillations are seen in the drain-source current-gate voltage (I ds-V ds) characteristics. From 300-20 K, a large increase in the Coulomb blockade region is observed. The characteristics are explained using singleelectron Monte Carlo simulation, where an inhomogeneous multiple tunnel junction represents a nanochain. Any reduction in capacitance at a nanocrystal well within the nanochain creates a conduction " bottleneck", suppressing current at low voltage and improving the Coulomb staircase. The single-electron charging energy at such an island can be very high, ~20k BT at 300 K. © 2012 The Japan Society of Applied Physics.

In vivo dynamics of the internal fibrous structure in smooth adhesive pads of insects.

Many insects with smooth adhesive pads can rapidly enlarge their contact area by centripetal pulls on the legs, allowing them to cope with sudden mechanical perturbations such as gusts of wind or raindrops. The short time scale of this reaction excludes any neuromuscular control; it is thus more likely to be caused by mechanical properties of the pad's specialized cuticle. This soft cuticle contains numerous branched fibrils oriented almost perpendicularly to the surface. Assuming a fixed volume of the water-filled cuticle, we hypothesized that pulls could decrease the fibril angle, thereby helping the contact area to expand laterally and longitudinally. Three-dimensional fluorescence microscopy on the cuticle of smooth stick insect pads confirmed that pulls significantly reduced the fibril angle. However, the fibril angle variation appeared insufficient to explain the observed increase in contact area. Direct strain measurements in the contact zone demonstrated that pulls not only expand the cuticle laterally, but also add new contact area at the pad's outer edge.

Cortical thickness mapping to identify focal osteoporosis in patients with hip fracture.

BACKGROUND: Individuals with osteoporosis are predisposed to hip fracture during trips, stumbles or falls, but half of all hip fractures occur in those without generalised osteoporosis. By analysing ordinary clinical CT scans using a novel cortical thickness mapping technique, we discovered patches of markedly thinner bone at fracture-prone regions in the femurs of women with acute hip fracture compared with controls. METHODS: We analysed CT scans from 75 female volunteers with acute fracture and 75 age- and sex-matched controls. We classified the fracture location as femoral neck or trochanteric before creating bone thickness maps of the outer 'cortical' shell of the intact contra-lateral hip. After registration of each bone to an average femur shape and statistical parametric mapping, we were able to visualise and quantify statistically significant foci of thinner cortical bone associated with each fracture type, assuming good symmetry of bone structure between the intact and fractured hip. The technique allowed us to pinpoint systematic differences and display the results on a 3D average femur shape model. FINDINGS: The cortex was generally thinner in femoral neck fracture cases than controls. More striking were several discrete patches of statistically significant thinner bone of up to 30%, which coincided with common sites of fracture initiation (femoral neck or trochanteric). INTERPRETATION: Femoral neck fracture patients had a thumbnail-sized patch of focal osteoporosis at the upper head-neck junction. This region coincided with a weak part of the femur, prone to both spontaneous 'tensile' fractures of the femoral neck, and as a site of crack initiation when falling sideways. Current hip fracture prevention strategies are based on case finding: they involve clinical risk factor estimation to determine the need for single-plane bone density measurement within a standard region of interest (ROI) of the femoral neck. The precise sites of focal osteoporosis that we have identified are overlooked by current 2D bone densitometry methods.

Compact three-dimensional silicon termination solutions for high voltage SOI SuperJunction

This paper demonstrates and discusses novel "three dimensional" silicon based junction isolation/termination solutions suitable for high density ultra-low-resistance Lateral Super-Junction structures. The proposed designs are both compact and effective in safely distributing the electrostatic potential away from the active device area. The designs are based on the utilization of existing layers in the device fabrication line, hence resulting in no extra complexity or cost increase. The study/demonstration is done through extensive experimental measurements and numerical simulations. © 2012 IEEE.

Photovoltaic measurements in carbon nanotube - Amorphous silicon core/shell nanowire

Carbon nanotube is one of the promising materials for exploring new concepts in solar energy conversion and photon detection. Here, we report the first experimental realization of a single core/shell nanowire photovoltaic device (2-4μm) based on carbon nanotube and amorphous silicon. Specifically, a multi-walled carbon nanotube (MWNTs) was utilized as the metallic core, on which n-type and intrinsic amorphous silicon layers were coated. A Schottky junction was formed by sputtering a transparent conducting indium-tin-oxide layer to wrap the outer shell of the device. The single coaxial nanowire device showed typical diode ratifying properties with turn-on voltage around 1V and a rectification ratio of 104 when biased at ±2V. Under illumination, it gave an open circuit voltage of ∼0.26V. Our study has shown a simple and useful platform for gaining insight into nanowire charge transport and collection properties. Fundamental studies of such nanowire device are important for improving the efficiency of future nanowire solar cells or photo detectors. © 2012 IEEE.

Linear quadratic game and non-cooperative predictive methods for potential application to modelling driver-AFS interactive steering control

This paper is concerned with the modelling of strategic interactions between the human driver and the vehicle active front steering (AFS) controller in a path-following task where the two controllers hold different target paths. The work is aimed at extending the use of mathematical models in representing driver steering behaviour in complicated driving situations. Two game theoretic approaches, namely linear quadratic game and non-cooperative model predictive control (non-cooperative MPC), are used for developing the driver-AFS interactive steering control model. For each approach, the open-loop Nash steering control solution is derived; the influences of the path-following weights, preview and control horizons, driver time delay and arm neuromuscular system (NMS) dynamics are investigated, and the CPU time consumed is recorded. It is found that the two approaches give identical time histories as well as control gains, while the non-cooperative MPC method uses much less CPU time. Specifically, it is observed that the introduction of weight on the integral of vehicle lateral displacement error helps to eliminate the steady-state path-following error; the increase in preview horizon and NMS natural frequency and the decline in time delay and NMS damping ratio improve the path-following accuracy. © 2013 Copyright Taylor and Francis Group, LLC.

SOI sensing technologies for harsh environment

This paper reviews and addresses certain aspects of Silicon-On-Insulator (SOI) technologies for a harsh environment. The paper first describes the need for specialized sensors in applications such as (i) domestic and other small-scale boilers, (ii) CO2 Capture and Sequestration, (iii) oil & gas storage and transportation, and (iv) automotive. We describe in brief the advantages and special features of SOI technology for sensing applications requiring temperatures in excess of the typical bulk silicon junction temperatures of 150oC. Finally we present the concepts, structures and prototypes of simple and smart micro-hotplate and Infra Red (IR) based emitters for NDIR (Non Dispersive IR) gas sensors in harsh environments. © 2012 IEEE.

End-of-range defects in germanium and their role in boron deactivation

We investigated the thermal evolution of end-of-range (EOR) defects in germanium and their impact on junction thermal stability. After solid-phase epitaxial regrowth of a preamorphized germanium layer, EOR defects exhibiting dislocation loop-like contrast behavior are present. These defects disappear during thermal annealing at 400 °C, while boron electrical deactivation occurs. After the whole defect population vanishes, boron reactivation is observed. These results indicate that germanium self-interstitials, released by EOR defects, are the cause of B deactivation. Unlike in Si, the whole deactivation/reactivation cycle in Ge is found to take place while the maximum active B concentration exceeds its solubility limit. © 2010 American Institute of Physics.

Silver paint as a soldering agent for DyBaCuO single-domains welding

Silver paint has been tested as a soldering agent for DyBaCuO single-domain welding. Junctions have been manufactured on Dy-Ba-Cu-O single-domains cut either along planes parallel to the c-axis or along the ab-planes. Microstructural and superconducting characterisations of the samples have been performed. For both types of junctions, the microstructure in the joined area is very clean: no secondary phase or Ag particles segregation has been observed. Electrical and magnetic measurements for all configurations of interest are reported $\rho(T)$ curves, and Hall probe mapping). The narrow resistive superconducting transition reported for all configurations shows that the artificial junction does not affect significantly the measured superconducting properties of the material.

Modeling bipolar power semiconductor devices gachovska

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models. Table of Contents: Introduction to Power Semiconductor Device Modeling/Physics of Power Semiconductor Devices/Modeling of a Power Diode and IGBT/IGBT Under an Inductive Load-Switching Condition in Simulink/Parameter Extraction. © 2013 by Morgan & Claypool.

The effect of dislocations on the efficiency of InGaN/GaN solar cells

Two solar cells based on an InGaN/GaN p-i-n hetero-junction, but having different dislocation densities, were fabricated and characterized. The structures were grown on c-plane (0001) GaN-on-sapphire templates with different threading dislocation (TD) densities of 5×108 and 5×109 cm-2. Structural characterization revealed the presence of V-defects in the InGaN epilayer. Since each V-defect was associated with a TD, the structural as well as the optical properties worsened with a higher TD density in the GaN/sapphire template. It was also found that additional dislocations were generated in the p-GaN layer over the V-defects in the InGaN layer. Because of its superior structural quality, the peak external quantum efficiency (EQE) of the low TD density sample was three times higher than that of the high TD density sample. © 2013 Elsevier B.V.

Effect of bandgap narrowing on performance of modern power devices

The effect of the bandgap narrowing (BGN) on performance of power devices is investigated in detail in this paper. The analysis reveals that the change in the energy band structure caused by BGN can strongly affect the conductivity modulation of the bipolar devices resulting in a completely different performance. This is due to the modified injection efficiency under high-level injection conditions. Using a comprehensive analysis of the injection efficiency in a p-n junction, an analytical model for this phenomenon is developed. BGN model tuning has been proved to be essential in accurately predicting the performance of a lateral insulated-gate bipolar transistor (IGBT). Other devices such as p-i-n diodes or punch-through IGBTs are significantly affected by the BGN, while others, such as field-stop IGBTs or power MOSFETs, are only marginally affected. © 2013 IEEE.