Structural and optical properties of RF sputtered Bi2VO5.5 thin films

Thin films of Bismuth Vanadate Bi2VO5.5 (BiV) have been deposited on amorphous quartz and polycrystalline silicon substrates by r.f. sputtering technique and characterised for their structural and optical properties. The os-deposited films at room temperature are found to be amorphous and transparent over the spectral range of 0.55 mu m to 12 mu m. Post-deposition annealing at 400 degrees C in air shows the formation of the BiV crystalline phase. The optical constants namely refractive index. extinction coefficient and optical bandgap of both amorphous and crystalline films have been determined. The refractive index of the as-deposited film is around 2.4 at 0.7 mu m and drops to 2.26 at 1.56 mu m. The optical bandgap of the material has been determined from the computed values of the absorption coefficients.

Simple Structural And Bonding Representations Of Fullerenes

Bonding in buckminsterfullerene, C60, can be described in terms of a unique canonical representation in which all six membered rings have a benzenoid Kekule structure while the pentagons are all made of exclusively single bonds. The corresponding valence bond structure reflects the full symmetry of the molecule and is consistent with the observed bond length variations. Computational support for the bonding description is provided using localized MO's obtained at the MNDO level. The requirement of benzenoid structures for all the hexagons can be used as a criterion of stability of fullerenes which complements the pentagon isolation rule. A convenient two-dimensional representation of the fullerene structures incorporating the above bonding description is suggested, especially for use in mechanistic discussions.

Structural and vibrational studies of the layered structure solid Fe1 ? xNixPS3 (1 greater-or-equal, slanted x greater-or-equal, slanted 0)

We report here the results of structural and vibrational studies on the solid solution Fe1 ? xNixPS3 (1 greater-or-equal, slanted x greater-or-equal, slanted 0) systems. From the structural analysis, we show that there is a lattice compaction as the composition x is varied from 0 to 1, the basic lattice symmetry being maintained. We find that the compaction is more in the basal plane. These subtle structural changes are also reflected in the vibrational bands. We observed splitting of certain bands due to these small changes in the lattice constants, which we explained as arising from a correlation splitting. These changes in the vibrational bands have also been seen on cooling where there is a preferential thermal compaction in the basal plane compared to that perpendicular to the plane.

Observations on the role of the steel disc counterface during the sliding of various structural ceramics

Sliding wear characteristics and mechanisms of structural ceramics, namely Al2O3, zirconia-toughened alumina, tetragonal zirconia polycrystals (TZP) and Si3N4 against a steel counterface are influenced by mechanical and tribochemical interactions, specific to the combinations studied. The present paper studies the role of the disc in the sliding wear process of the above ceramics. Experiments were conducted at a pressure of 15.5 MPa between 0.1 and 12.0 m s(-1) with ceramic pins sliding against an EN-24 steel disc. Except in the case of TZP, the disc morphology is sensitive to variations in speed rather than to the pin material. The disc track is (i) mildly abraded at low speeds (about 0.1-0.75 m s(-1)), (ii) severely abraded at intermediate speeds (about 1.0-3.0 m s(-1)), (iii) covered with black patches at high speeds (about 4.0-6.0 m s(-1)) and (iv) completely black at very high speeds (about 7.0-12.0 m s(-1)). In the case of TZP, although black patches appear, transfer of TZP onto the disc surface and high wear of TZP occurs at 4.0 m s(-1). The order of the wear of the disc estimated from profilometric measurements is the same for all the ceramics. Except for Si3N4, the onset of wear of the ceramics is associated with the appearance of deep 'V' grooves on either side of the profile of the disc track. This can be explained on the basis of the thermal and hardness variations. Although other interaction products specific to the ceramic pin are present, the formation of iron oxides dominates the wear of the disc.

Structural and Dielectric-Properties Of A Novel BI2O3-(1-X)WO3-XCUO Solid-Solution

A novel solid solution in the system Bi-W-Cu-O has been synthesized and its structural and dielectric properties studied. The solid solution Bi2O3-(1-x)WO3-xCuO exists up to x = 0.7; the solid solutions up to x = 0.65 are orthorhombic but stabilize in tetragonal structure in a narrow range around x = 0.7. The solid solutions are non-centrosymmetric and exhibit ferroelectric behaviour similar to their parent phase Bi2WO6. The Curie point of the solid solution is found to decrease with increase in x.

Structural and electrical transport properties of Al-Cu-Cr quasicrystals

Transport properties of quasicrystals in rapidly solidified as well as heat-treated Al65CU20Cr15 alloys were studied over a wide temperature range as a function of structure and microstructure. The characterization was done using x-ray diffraction, transmission electron microscopy and differential scanning calorimetry. Particular attention was paid to primitive to face-centered quasicrystalline transformation which occurs on annealing and the effect of microstructures on the transport behavior. The temperature dependence of resistivity is found to depend crucially on the microstructure of the alloy. Further, ordering enhances the negative temperature coefficient of resistivity. The low-temperature (T less than or equal to 25 K) resistivity of Al65Cu20Cr15 has been compared with that of Al63.5Cu24.5Fe12 alloy. In this region p(T) can be well described by a root T contribution arising from electron-electron interaction. We discuss our results in view of current theories.

Variability of sif and cod of stochastic structural systems

Stochastic structural systems having a stochastic distribution of material properties and stochastic external loadings in space are analysed when a crack of deterministic size is present. The material properties and external loadings are considered to constitute independent, two-dimensional, univariate, real, homogeneous stochastic fields. The stochastic fields are characterized by their means, variances, autocorrelation functions or the equivalent power spectral density functions, and scale fluctuations. The Young's modulus and Poisson's ratio are treated to be stochastic quantities. The external loading is treated to be a stochastic field in space. The energy release rate is derived using the method of virtual crack extension. The deterministic relationship is derived to represent the sensitivities of energy release rate with respect to both virtual crack extension and real system parameter fluctuations. Taylor series expansion is used and truncation is made to the first order. This leads to the determination of second-order properties of the output quantities to the first order. Using the linear perturbations about the mean values of the output quantities, the statistical information about the energy release rates, SIF and crack opening displacements are obtained. Both plane stress and plane strain cases are considered. The general expressions for the SIF in all the three fracture modes are derived and a more detailed analysis is conducted for a mode I situation. A numerical example is given.

Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Role of hydrophobic effect and surface charge in surfactant-DNA association

Ethidium bromide is one of the best known DNA intercalator. Upon intercalation inside DNA, the fluorescence due to ethidium bromide gets enhanced by many orders of magnitude. In this paper, we employed ethidium bromide as a probe for studying surfactant-DNA complexation using fluorescence spectroscopy and agarose gel electrophoresis. Surfactants of different charge types and chain lengths were used and the results were compared with that of the related small organic cations or salts under comparable conditions. The cationic surfactants induced destabilization of the ethidium bromide-DNA complex at concentrations in orders of magnitude lower than that of the small organic cations or salts. In contrast however, the anionic surfactants failed to promote any such destabilization of probe-DNA complex. DNA loses its ethidium bromide stainability in the presence of high concentration of cationic surfactant aggregates as revealed from agarose gel electrophoresis experiments. Inclusion of surfactants and other additives into the DNA generally enhanced the DNA double-strand to single strand transition melting temperatures by a few degrees, in a concentration-dependent manner and at high surfactant concentration melting profiles got broadened.

Structural and transport properties of high energy ion irradiated YBCO

The effects of 100 MeV Oxygen and 200 MeV Silver ions on the structural and transport properties of YBCO thin films are reported. Both normal state and superconducting properties were studied on Laser ablated and high pressure oxygen sputtered films. Precise electrical resistance and critical current measurements near T-c were made and the data obtained were analysed in the light of existing models of para-coherence near T-c and the other aspects of radiation damage arising from microstructural studies such as atomic force microscopy (AFM). There was evidence of sputtering by high energy ions from AFM measurement. (C) 1998 Elsevier Science Ltd. All rights reserved.

Studies on structural and electrical properties of barium strontium titanate thin films developed by metallo-organic decomposition

Thin films of barium strontium titanate (BST) including BaTiO3 and SrTiO3 end members were deposited using the metallo-organic decomposition (MOD) technique. Processing parameters such as nonstoichiometry, annealing temperature and time, film thickness and doping concentration were correlated with the structural and electrical properties of the films. A random polycrystalline structure was observed for all MOD films under the processing conditions in this study. The microstructures of the films showed multi-grains structure through the film thickness. A dielectric constant of 563 was observed for (Ba0.7Sr0.3)TiO3 films rapid thermal annealed at 750 degrees C for 60 s. The dielectric constant increased with annealing temperature and film thickness, while the dielectric constant could reach the bulk values for thicknesses as thin as similar to 0.3 mu m. Nonstoichiometry and doping in the films resulted in a lowering of the dielectric constant. For near-stoichiometric films, a small dielectric dispersion obeying the Curie-von Schweidler type dielectric response was observed. This behavior may be attributed to the presence of the high density of disordered grain boundaries. All MOD processed films showed trap-distributed space-charge limited conduction (SCLC) behavior with slope of similar to 7.5-10 regardless of the chemistry and processing parameter due to the presence of main boundaries through the film thickness. The grain boundaries masked the effect of donor-doping, so that all films showed distributed-trap SCLC behavior without discrete-traps. Donor-doping could significantly improve the time-dependent dielectric breakdown behavior of BST thin films, mostly likely due to the lower oxygen vacancy concentration resulted from donor-doping. From the results of charge storage density, leakage current and time-dependent dielectric breakdown behavior, BST thin films are found to be promising candidates for 64 and 256Mb ULSI DRAM applications. (C) 1997 Elsevier Science S.A.

Nanotubes of the disulfides of groups 4 and 5 metals

The layered chalcogenides, having structures analogous to graphite, are known to be unstable toward bending and show high propensity to form curved structures, thus eliminating dangling bonds at the edges. Since the discovery of fullerene and nanotube structures of WS2 and MoS2 by Tenne et al. [1-3], there have been attempts to prepare and characterize nanotubes of other layered dichalcogenides with structures analogous to MoS2. Nanotubes of MoS2 and WS2 were prepared by Tenne et al. by reducing the corresponding oxides to the suboxides followed by heating in an atmosphere of forming gas (5 % H-2 + 95 % N-2) and H2S at 700-900 degreesC [1-3]. Alternative methods of synthesis of MoS2 and WS2 nanotubes have since been proposed by employing the decomposition of the ammonium thiometallates or the corresponding trisulfide precursors. This alternative procedure was based on the observation that the trisulfide seems to be formed as an intermediate in the synthesis of the MoS2 and WS2 nanotubes [4]. Accordingly, the decomposition of the trisulfides of MoS2 and W in a reducing atmosphere directly yielded nanotubes of the disulfides MoS2 and WS2 [5]. In this article, we describe the synthesis, structure, and characterization of a few novel nanotubes of the disulfides of groups 4 and 5 metals. These include nanotubes of NbS2, TaS2, ZrS2, and HfS2. The study enlarges the scope of the inorganic nanotubes significantly and promises other interesting possibilities, including the synthesis of the diselenide nanotubes of these metals.

Solid state structural and solution studies on the formation of a flexible cavity for anions by copper(I) and 1,2-bis(diphenylphosphino)ethane

Copper(l) complexes of 1,2-bis(diphenylphosphino)ethane (dppe) with a stoichiometry Cu-2(dppe)(3)(X)(2) [X- = CN- (1), SCN- (2), NO3- (3)] are obtained from direct reactions of CuX and dppe. The complexes are structurally and spectroscopically (NMR and IR) characterized. The structure of the [Cu-2(dPPe)(3)](2+) dication is similar to the structural motif observed in many other complexes with a chelating dppe and a bridging dppe connecting two copper centers. In complexes 1 -3, the anions are confined to the cavity formed by the phosphines which force a monodentate coordination mode despite the predominant bidentate/bridging character of the anions. The coordination angles rather than the thermochemical radii dictate the steric requirement of anions. While the solution behavior of 3, with nitrate, is similar to complexes studied earlier, complexes with pseudohalides exhibit new solution behavior. (C) 2002 Elsevier Science Ltd. All rights reserved.

Systematic trends in structural and thermodynamic properties of ternary oxides in the systems Ln-Pd-O (Ln = lanthanide element)

Isothermal sections of the phase diagrams for the systems Ln-Pd-O (Ln = lanthanide element) at 1223 K indicate the presence of two inter-oxide compounds Ln(4)PdO(7) and Ln(2)Pd(2)O(5) for Ln = La, Pr, Nd, Sm, three compounds Ln(4)PdO(7), Ln(2)PdO(4) and Ln(2)Pd(2)O(5) for Ln = Eu, Gd and only one compound of Ln(2)Pd(2)O(5) for Ln = Tb to Ho. The lattice parameters of the compounds Ln(4)PdO(7), Ln(2)PdO(4) and Ln(2)Pd(2)O(5) show systematic nonlinear variation with atomic number. The unit cell volumes decrease with increasing atomic number. The standard Gibbs energies, enthalpies and entropies of formation of the ternary oxides from their component binary oxides (Ln(2)O(3) and PdO) have been measured recently using an advanced version of the solid-state electrochemical cell. The Gibbs energies and enthalpies of formation become less negative with increasing atomic number of Ln. For all the three compounds, the variation in Gibbs energy and enthalpy of formation with atomic number is markedly non-linear. The decrease in stability with atomic number is most pronounced for Ln(2)Pd(2)O(5), followed by Ln(4)PdO(7) and Ln(2)PdO(4). This is probably related to the repulsion between Pd2+ ions on the opposite phases Of O-8 cubes in Ln(2)Pd(2)O(5), and the presence of Ln-filled O-8 cubes that share three faces with each other in Ln4PdO7. The values for entropy of formation of all the ternary oxides from their component binary oxides are relatively small. Although the entropies of formation show some scatter, the average value for Ln = La, Pr, Nd is more negative than the average value for the other lanthanide elements. From this difference, an average value for the structure transformation entropy of Ln(2)O(3) from C-type to A-type is estimated as 0.87 J.mol(-1).K-1. The standard Gibbs energies of formation of these ternary oxides from elements at 1223 K are presented as a function of lanthanide atomic number. By invoking the Neumann-Kopp rule for heat capacity, thermodynamic properties of the inter-oxide compounds at 298.15 K are estimated. (C) 2002 Elsevier Science Ltd. All rights reserved.

Structural and dielectric properties of Bi2NbxVi−xO5.5 ceramics

Bi2Nbx V1−xO5.5 ceramics with x ranging from 0.01 to 0.5 have been prepared. The crystal system transforms from an orthorhombic to tetragonal at x 3= 0.1 and it persists until x = 0.5. Scanning electron microscopic (SEM) investigations carried out on thermally etched Bi2NbxV1−xO5.5 ceramics confirm that the grain size decreases markedly (18 μm to 4 μm) with increasing x. The shift in the Curie temperature (725 K) toward lower temperatures, with increasing x, is established by Differential Scanning Calorimetry (DSC). The dielectric constants as well as the loss tangent (tan δ) decrease with increasing x at room temperature.