New transparent crystallized glasses with optical nonlinear LiBGeO4 crystals

Crystallization behaviors of the glass with a composition of 25Li(2)O.25B(2)O(3).50GeO(2) corresponding to lithium borogermanate LiBGeO4 have been examined. It has been confirmed that the LiBGeO4 crystalline phase is formed at the surface of heat-treated glasses. The second harmonic (SH) generation is found from transparent surface crystallized glasses, demonstrating for the first time that the LiBGeO4 phase shows optical nonlinearity. The SH intensity of LiBGeO4 crystallites (powdered state) prepared through crystallization is about ten times as large as that of pulverized alpha-quartz. The SH intensity of transparent crystallized glasses (bulk state) with crystalline layers of 3-4.5 mum thickness increases with increasing heat treatment temperature (540-560degreesC) and time (1-6 h), and the maximum SH intensity among the samples studied is in the order of 1/10 in comparison with that of alpha-quartz single crystal. The transparent crystallized glass obtained by heat treatment at 550alphaC for 3 h exhibits a clear and fine Maker fringe pattern, indicating a highly orientation of LiBGeO4 crystals at the surface.

Theory of polymer breaking under tension

We consider the breaking of a polymer molecule which is fixed at one end and is acted upon by a force at the other. The polymer is assumed to be a linear chain joined together by bonds which satisfy the Morse potential. The applied force is found to modify the Morse potential so that the minimum becomes metastable. Breaking is just the decay of this metastable bond, by causing it to go over the barrier. Increasing the force causes the potential to become more and more distorted and eventually leads to the disappearance of the barrier. The limiting force at which the barrier disappears is D(e)a/2,D-e with a the parameters characterizing the Morse potential. The rate of breaking is first calculated using multidimensional quantum transition state theory. We use the harmonic approximation to account for vibrations of all the units. It includes tunneling contributions to the rate, but is valid only above a certain critical temperature. It is possible to get an analytical expression for the rate of breaking. We have calculated the rate of breaking for a model, which mimics polyethylene. First we calculate the rate of breaking of a single bond, without worrying about the other bonds. Inclusion of other bonds under the harmonic approximation is found to lower this rate by at the most one order of magnitude. Quantum effects are found to increase the rate of breaking and are significant only at temperatures less than 150 K. At 300 K, the calculations predict a bond in polyethylene to have a lifetime of only seconds at a force which is only half the limiting force. Calculations were also done using the Lennard-Jones potential. The results for Lennard-Jones and Morse potentials were rather different, due to the different long-range behaviors of the two potentials. A calculation including friction was carried out, at the classical level, by assuming that each atom of the chain is coupled to its own collection of harmonic oscillators. Comparison of the results with the simulations of Oliveira and Taylor [J. Chem. Phys. 101, 10 118 (1994)] showed the rate to be two to three orders of magnitude higher. As a possible explanation of discrepancy, we consider the translational motion of the ends of the broken chains. Using a continuum approximation for the chain, we find that in the absence of friction, the rate of the process can be limited by the rate at which the two broken ends separate from one another and the lowering of the rate is at the most a factor of 2, for the parameters used in the simulation (for polyethylene). In the presence of friction, we find that the rate can be lowered by one to two orders of magnitude, making our results to be in reasonable agreement with the simulations.

Electrical switching in chalcogenide glasses - Some newer insights

The recent studies on the switching. behavior of several chalcogenide semiconductors indicate that there exists a close relation between the electrical switching and structural effects in these materials; the two network topological Thresholds, namely the Rigidity Percolation and the Chemical Threshold are found to influence considerably the composition dependence of the switching voltages/fields of many memory and threshold switching glasses. Further, changes in the coordination of constituent atoms are found to effect a change in the switching behavior (memory to threshold), Also, an interesting relation has been established between the type of switching exhibited and the thermal diffusivity of the material.

Carrier density-dependent transport in poly(3-methylthiophene): from injection-limited to space-charge-limited current

Current-voltage (I-V) and impedance measurements were carried out in doped poly(3-methylthiophene) devices by varying the carrier density. As the carrier concentration reduces the I-V characteristics indicate that the conduction mechanism is limited by metal-polymer interface, as also observed in impedance data. The temperature dependence of I-V in moderately doped samples shows a trap-controlled space-charge-limited conduction (SCLC); whereas in lightly doped devices injection-limited conduction is observed at lower bias and SCLC at higher voltages. The carrier density-dependent quasi-Fermi level adjustment and trap-limited transport could explain this variation in conduction mechanism. Capacitance measurements at lower frequencies and higher bias voltages show a sign change in values due to the significant variations in the relaxation behaviour for lightly and moderately doped samples. The electrical hysteresis increases as carrier density is reduced due to the time scales involved in the de-trapping of carriers.

Composition tunable memory and threshold switching in Al20As xTe80− x semiconducting glasses

I-V studies indicate a composition dependent switching behavior (Memory or Threshold) in bulk Al20AsxTe80−x glasses, which is determined by the coordination and composition of aluminum. Investigations on temperature and thickness dependence of switching and structural studies on switched samples suggest thermal and electronic mechanisms of switching for the memory and threshold samples, respectively. The present results also show that these samples have a wider composition range of threshold behavior with lower threshold voltages compared to other threshold samples.

Two-channel Kondo physics in odd impurity chains

We study odd-membered chains of spin-1/2 impurities, with each end connected to its own metallic lead. For antiferromagnetic exchange coupling, universal two-channel Kondo (2CK) physics is shown to arise at low energies. Two overscreening mechanisms are found to occur depending on coupling strength, with distinct signatures in physical properties. For strong interimpurity coupling, a residual chain spin-1/2 moment experiences a renormalized effective coupling to the leads, while in the weak-coupling regime, Kondo coupling is mediated via incipient single-channel Kondo singlet formation. We also investigate models in which the leads are tunnel-coupled to the impurity chain, permitting variable dot filling under applied gate voltages. Effective low-energy models for each regime of filling are derived, and for even fillings where the chain ground state is a spin singlet, an orbital 2CK effect is found to be operative. Provided mirror symmetry is preserved, 2CK physics is shown to be wholly robust to variable dot filling; in particular, the single-particle spectrum at the Fermi level, and hence the low-temperature zero-bias conductance, is always pinned to half-unitarity. We derive a Friedel-Luttinger sum rule and from it show that, in contrast to a Fermi liquid, the Luttinger integral is nonzero and determined solely by the ``excess'' dot charge as controlled by gate voltage. The relevance of the work to real quantum dot devices, where interlead charge-transfer processes fatal to 2CK physics are present, is also discussed. Physical arguments and numerical renormalization-group techniques are used to obtain a detailed understanding of these problems.

Model of resistances in systems of Tomonaga-Luttinger liquid wires

In a recent paper, we combined the technique of bosonization with the concept of a Rayleigh dissipation function to develop a model for resistances in one-dimensional systems of interacting spinless electrons Europhys. Lett. 93, 57007 (2011)]. We also studied the conductance of a system of three wires by using a current splitting matrix M at the junction. In this paper, we extend our earlier work in several ways. The power dissipated in a three-wire system is calculated as a function of M and the voltages applied in the leads. By combining two junctions of three wires, we examine a system consisting of two parallel resistances. We study the conductance of this system as a function of the M matrices and the two resistances; we find that the total resistance is generally quite different from what one expects for a classical system of parallel resistances. We do a sum over paths to compute the conductance of this system when one of the two resistances is taken to be infinitely large. We study the conductance of a three-wire system of interacting spin-1/2 electrons, and show that the charge and spin conductances can generally be different from each other. Finally, we consider a system of two wires that are coupled by a dissipation function, and we show that this leads to a current in one wire when a voltage bias is applied across the other wire.

Electrical switching studies on AS(40)Te(60-x)Se(x) and As35Te65-xSex glasses

The I-V characteristics of bulk As40Te60-xSex and As35Te65-xSex glasses have been studied with a current sweep of 0-18 mA-0, over a wide range of compositions (4 less than or equal to x less than or equal to 22). All the glasses studied showed a threshold electrical switching behaviour. The number of switching cycles withstood by the samples has been found to depend on the ON-state current. It is seen that the switching voltages increase with increase in selenium content. Further, the switching voltages are found to be almost independent of the thickness of the sample (d), in the range 0.18-0.3 mm. Also, the switching voltages and the number of switching cycles withstood by the samples are found to decrease with temperature.

A Seven-Level Inverter Topology for Induction Motor Drive Using Two-Level Inverters and Floating Capacitor Fed H-Bridges

A multilevel inverter topology for seven-level space vector generation is proposed in this paper. In this topology, the seven-level structure is realized using two conventional two-level inverters and six capacitor-fed H-bridge cells. It needs only two isolated dc-voltage sources of voltage rating V(dc)/2 where V(dc) is the dc voltage magnitude required by the conventional neutral point clamped (NPC) seven-level topology. The proposed topology is capable of maintaining the H-bridge capacitor voltages at the required level of V(dc)/6 under all operating conditions, covering the entire linear modulation and overmodulation regions, by making use of the switching state redundancies. In the event of any switch failure in H-bridges, this inverter can operate in three-level mode, a feature that enhances the reliability of the drive system. The two-level inverters, which operate at a higher voltage level of V(dc)/2, switch less compared to the H-bridges, which operate at a lower voltage level of V(dc)/6, resulting in switching loss reduction. The experimental verification of the proposed topology is carried out for the entire modulation range, under steady state as well as transient conditions.

Potential and Electric Field Profiles for Transmission line Insulators

Transmission of bulk power at high voltages over very long distances has become very imperative. At present, throughout the globe, this task has been mostly performed by overhead transmission lines. The dual task of mechanically supporting and electrically isolating the live phase conductors from the support tower is performed by string insulators. Whether in clean condition or under polluted conditions, the electrical stress distribution along the insulators governs the possible flashover, which is quite detrimental to the system. However, a reliable data on stress distribution in commonly employed string insulators are rather scarce. Considering this, the present work has made an attempt to study accurately, the field distribution in 220 kV strings for six different types of porcelain/ceramic insulators (Normal and Antifog discs) used for high voltage transmission. The surface charge simulation method is employed for the required field computation. Voltage and electric stress distribution is deduced and compared across different types of discs. A comparison on normalised surface resistance, which is an indicator for the stress concentration under polluted condition, is also attempted.

A 100MHz to 1GHz, 0.35V to 1.5V Supply 256 x 64 SRAM Block Using Symmetrized 9T SRAM Cell with Controlled Read

In this paper, we present dynamic voltage and frequency Managed 256 x 64 SRAM block in 65 nm technology, for frequency ranging from 100 MHz to 1 GHz. The total energy is minimized for any operating frequency in the above range and leakage energy is minimized during standby mode. Since noise margin of SRAM cell deteriorates at low voltages, we propose static noise margin improvement circuitry, which symmetrizes the SRAM cell by controlling the body bias of pull down NMOS transistor. We used a 9T SRAM cell that isolates Read and hold noise margin and has less leakage. We have implemented an efficient technique of pushing address decoder into zigzag- super-cut-off in stand-by mode without affecting its performance in active mode of operation. The read bit line (RBL) voltage drop is controlled and pre-charge of bit lines is done only when needed for reducing power wastage.

INTACTE: An Interconnect Area, Delay, and Energy Estimation Tool for Microarchitectural Explorations

Prior work on modeling interconnects has focused on optimizing the wire and repeater design for trading off energy and delay, and is largely based on low level circuit parameters. Hence these models are hard to use directly to make high level microarchitectural trade-offs in the initial exploration phase of a design. In this paper, we propose INTACTE, a tool that can be used by architects toget reasonably accurate interconnect area, delay, and power estimates based on a few architecture level parameters for the interconnect such as length, width (in number of bits), frequency, and latency for a specified technology and voltage. The tool uses well known models of interconnect delay and energy taking into account the wire pitch, repeater size, and spacing for a range of voltages and technologies.It then solves an optimization problem of finding the lowest energy interconnect design in terms of the low level circuit parameters, which meets the architectural constraintsgiven as inputs. In addition, the tool also provides the area, energy, and delay for a range of supply voltages and degrees of pipelining, which can be used for micro-architectural exploration of a chip. The delay and energy models used by the tool have been validated against low level circuit simulations. We discuss several potential applications of the tool and present an example of optimizing interconnect design in the context of clustered VLIW architectures. Copyright 2007 ACM.

An Overmodulation Scheme for Vector Controlled Induction Motor Drives

This paper presents an algorithm for control of line side voltage of a voltage source inverter upto six-step mode. This is a modified version of an existing overmodulation algorithm. The modified algorithm maintains proportionality between the reference voltage and the output fundamental voltage, and also reduces the computational effort required for implementation, while resulting in a marginally higher harmonic distortion. An estimation method is proposed for calculation of lower order ripple current. This estimation method is applied to a sensorless vector controlled induction motor drive to improve the performance of the drive during overmodulation.

Coupling of High Voltage AC Power Line Fields to Metallic Pipelines

In the recent years, there has been a trend to run metallic pipelines carrying petroleum products and high voltage AC power lines parallel to each other in a relatively narrow strip of land. Due to this sharing of the right-of-way, verhead AC power line electric field may induce voltages on the metallic pipelines running in close vicinity leading to serious adverse effects. In this paper, the induced voltages on metallic pipelines running in close vicinity of high voltage power transmission lines have been computed. Before computing the induced voltages, an optimum configuration of the phase conductors based on the lowest conductor surface gradient and field under transmission line has been arrived at. This paper reports the conductor surface field gradients calculated for the various configurations. Also the electric fields under transmission line, for single circuit and double circuit (various phase arrangements) have been analyzed. Based on the above results, an optimum configuration giving the lowest field under the power line as well as the lowest conductor surface gradient has been arrived at and for this configuration, induced voltage on the pipeline has been computed using the Charge Simulation Method (CSM). For comparison, induced voltages on the pipeline has been computed for the various other phase configurations also.

Novel Switching Sequences for a Space-Vector-Modulated Three-Level Inverter

A three-level inverter produces six active vectors, each of normalized magnitudes 1, 0.866, and 0.5, besides a zero vector. The vectors of relative length 0.5 are termed pivot vectors.The three nearest voltage vectors are usually used to synthesize the reference vector. In most continuous pulsewidth-modulation(PWM) schemes, the switching sequence begins from a pivot vector and ends with the same pivot vector. Thus, the pivot vector is applied twice in a subcycle or half-carrier cycle. This paper proposes and investigates alternative switching sequences, which use the pivot vector only once but employ one of the other two vectors twice within the subcycle. The total harmonic distortion(THD) in the fundamental line current pertaining to these novel sequences is studied theoretically as well as experimentally over the whole range of modulation. Compared with centered space vector PWM, two of the proposed sequences lead to reduced THD at high modulation indices at a given average switching frequency.