Experimental study on tunable external cavity photodetectors

In this paper, an experiment on tunable resonant cavity enhanced (RCE) photodetector with external cavity is reported. It is the first time to realize a tunable RCE photodetector in China. A tuning range about 10 nm has been obtained and further extension is expected. Corresponding theoretical analysis and discussions are presented. (C) 2000 Elsevier Science B.V. All rights reserved.

Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters

Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters are studied. Four SiGe/Si single wells have been grown on Si(001) at 750 degrees C by disilane and solid Ge molecular beam epitaxy with varied disilane cracking-temperatures. Intense NP and TO-phonon replicas are detected up to 70 K in the photoluminescence spectra and the activation energy of the thermal quenching of the photoluminescence is 28 +/- 4 meV. The high growth temperature and purposeful introduction of fluctuation of structural parameters may be responsible for the improvement of the thermal quenching property.

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

The growth rate of GaN buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (MOVPE) in an atmospheric pressure, two-channel reactor was studied. The growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. A model of the GaN buffer layer growth process by MOVPE is proposed to interpret the experimental evidence. (C) 1998 Elsevier Science B.V. All rights reserved.

Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V

An extended subtraction method of scattering parameters for characterizing laser diode is introduced in this paper. The intrinsic small-signal response can be directly extracted from the measured transmission coefficients of laser diode by the method. However the chip temperature may change with the injection bias current due to thermal effects, which causes inaccurate intrinsic response by our method. Therefore, how to determine the chip temperature and keep the laser chip adiabatic is very critical when extracting the intrinsic response. To tackle these problems, the dependence of the lasing wavelength of the laser diode on the chip temperature is investigated, and an applicable measurement setup which keeps the chip temperature stable is presented. The scattering parameters of laser diode are measured on diabatic and adiabatic conditions, and the extracted intrinsic responses for both conditions are compared. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis indicates that inclusion of thermal effects is necessary to acquire accurate intrinsic response.

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm(2) only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.

Broadband external cavity tunable quantum dot lasers with low injection current density

Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm(2)). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to similar to 150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.

Stretchable Graphene: A Close Look at Fundamental Parameters through Biaxial Straining

Tunable biaxial stresses, both tensile and compressive, are applied to a single layer graphene by utilizing piezoelectric actuators. The Gruneisen parameters for the phonons responsible for the D, G, 2D and 2D' peaks are studied. The results show that the D peak is composed of two peaks, unambiguously revealing that the 2D peak frequency (omega(2D)) is not exactly twice that of the D peak (omega(D)). This finding is confirmed by varying the biaxial strain of the graphene, from which we observe that the shift of omega(2D)/2 and omega(D) are different. The employed technique allows a detailed study of the interplay between the graphene geometrical structures and its electronic properties.

Effect of pulse heating parameters on the microscale bubble dynamics at a microheater surface

We study the effects of pulse heating parameters on the micro bubble behavior of a platinum microheater (100 mu m x 20 mu m) immersed in a methanol pool. The experiment covers the heat fluxes of 10-37 MW/m(2) and pulse frequencies of 25-500 Hz. The boiling incipience is initiated at the superheat limit of methanol, corresponding to the homogeneous nucleation. Three types of micro boiling patterns are identified. The first type is named as the bubble explosion and regrowth, consisting of a violent explosive boiling and shrinking, followed by a slower bubble regrowth and subsequent shrinking, occurring at lower heat fluxes. The second type, named as the bubble breakup and attraction, consists of the violent explosive boiling, bubble breakup and emission, bubble attraction and coalescence process, occurring at higher heat fluxes than those of the first type. The third type, named as the bubble size oscillation and large bubble formation, involves the initial explosive boiling, followed by a short periodic bubble growth and shrinking. Then the bubble continues to increase its size, until a constant bubble size is reached which is larger than the microheater length. 

Guiding mode in elliptical core microstructured polymer optical fiber

A kind of microstructured polymer optical fiber with elliptical core has been fabricated by adopting in-situ chemical polymerization technology and the secondary sleeving draw-stretching technique. Microscope photography demonstrates the clear hole-structure retained in the fiber. Though the holes distortion is visible, initial laser experiment indicates that light can be strongly confined in the elliptical core region, and the mode field is split obviously and presents the multi-mode characteristic. Numerical modeling is carried out for the real fiber with the measured parameters, including the external diameter of 150 pin, the average holes diameter of 3.3 mu m, and the average hole spacing of 6.3 mu m. by using full-vector plane wave method. The guided mode fields of the numerical simulation are consistent with the experiment result. This fiber shows the strong multi-mode and weak birefringence in the visible and near-infrared band, and has possibility for achieving the fiber mode convertors, mode selective couplers and so on.

玉米根系吸水能力细胞水平的杂种优势

在人工气候室水培条件下,以玉米(ZeamaysL.)杂交种F1代户单4号及其母本天四和父本478为材料,用细胞压力探针技术研究了正常供水和PEG-6000模拟–0.2MPa水分胁迫条件下,玉米根皮层细胞水分关系参数的基因型差异。结果表明,根皮层细胞的直径、长度和体积均为F1代>母本>父本;正常供水条件下3个玉米品种的根皮层细胞膨压均在0.6MPa左右且品种间差异不显著,水分胁迫抑制了细胞的延伸生长且F1代和母本的细胞膨压显著高于父本;根皮层细胞壁体积弹性模量均为父本>母本>F1代,水分胁迫条件下的品种间差异显著;与正常供水条件相比,水分胁迫条件下细胞膨压显著降低,而弹性模量则大幅度提高;在两种水分条件下,水分跨细胞膜运转的半时间均为父本>母本>F1代,且半时间在水分胁迫条件下均显著高于正常供水条件下;HgCl2处理引起了半时间的延长,2-巯基乙醇则部分逆转了HgCl2的效应;在两种水分条件下,根皮层细胞水导均为F1代>母本>父本且品种间差异显著,水分胁迫则显著降低了细胞水导。试验证明杂交种F1代的细胞水平根系吸水能力优于亲本,体现了杂种优势。