Time response of optical switching properties of Sb thin films under focused laser pulses

The time response of optical switching properties of Sb thin films under focused laser pulses is investigated. The results show that the response course can be divided into onset, opening, and closing stages. Formulas for their lengths are given. The onset and opening times decrease with increasing pumping light power density. The closing time is about 150 ns. For optical memory, if the power density of the readout and recording lasers changes from 5 x 10(9) to 15 x 10(9) W/m(2), the onset time changes from 2.5 to 0.30 mus, and the opening time is on the nanosecond scale. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Optical recording properties of metal-azo dye as recording medium with super-resolution near-field structure

A novel metallized azo dye has been synthesized. The absorption spectra of the thin film and thermal characteristic are measured. Static optical recording properties with and without the Bi mask layer super-resolution near-field structure (Super-RENS) of the metal-azo dye are investigated. The results show that the metal-azo dye film has a broad absorbance band in the region of 450-650 nm and the maximum absorbance wavelength is located at 603 nm. It is also found that the new metallized azo dye occupies excellent thermal stability, initiatory decomposition temperature is at 270 degrees C and the mass loss is about 48% in a narrow temperature region (15 degrees C). The complex refractive index N (N = n + ik) is measured. High refractive index (n = 2.45) and low extinction coefficient (k = 0.2) at the recording wavelength 650nm are attained. Static optical recording tests with and without Super-RENS are carried out using a 650nm semiconductor diode laser with recording power of 7mW and laser pulse duration of 200ns. The AFM images show that the diameter of recording mark on the dye film with the Bi mask layer is reduced about 42%, compared to that of recorded mark on the dye film without Super-RENS. It is indicated that Bi can well performed as a mask layer of the dye recording layer and the metallized azo dye can be a promising candidate for recording media with the super-resolution near-field structure.

Electric and magnetic losses and gains in determining the sign of refractive index

Within the framework of classic electromagnetic theories, we have studied the sign of refractive index of optical medias with the emphases on the roles of the electric and magnetic losses and gains. Starting from the Maxwell equations for an isotropic and homogeneous media, we have derived the general form of the complex refractive index and its relation with the complex electric permittivity and magnetic permeability, i.e. n = root epsilon mu, in which the intrinsic electric and magnetic losses and gains are included as the imaginary parts of the complex permittivity and permeability, respectively, as epsilon = epsilon(r) + i(epsilon i) and mu = mu(r) + i mu(i). The electric and magnetic losses are present in all passive materials, which correspond, respectively, to the positive imaginary permittivity and permeability epsilon(i) > 0 and mu(i) > 0. The electric and magnetic gains are present in materials where external pumping sources enable the light to be amplified instead of attenuated, which correspond, respectively, to the negative imaginary permittivity and permeability epsilon(i) < 0 and mu(i) < 0. We have analyzed and determined uniquely the sign of the refractive index, for all possible combinations of the four parameters epsilon(r), mu(r), epsilon(i), and mu(i), in light of the relativistic causality. A causal solution requires that the wave impedance be positive Re {Z} > 0. We illustrate the results for all cases in tables of the sign of refractive index. One of the most important messages from the sign tables is that, apart from the well-known case where simultaneously epsilon < 0 and mu < 0, there are other possibilities for the refractive index to be negative n < 0, for example, for epsilon(r) < 0, mu(r) > 0, epsilon(i) > 0, and mu(i) > 0, the refractive index is negative n < 0 provided mu(i)/epsilon(i) > mu(r)/vertical bar epsilon(r)vertical bar. (c) 2006 Elsevier B.V. All rights reserved.

超大功率二维半导体激光列阵并路自适应稳模技术

半导体列阵量子效率高,输出波长范围涵盖570～1600nm,工作寿命可达数百万小时,叠层列阵可提供超高功率激光输出,在工业、医学等很多领域具有非常广阔的应用前景。但列阵在自由运行时,各发光单元发出的光是不相干的,输出质量差,采用1/4Talbot外腔镜耦合技术,列阵实现了空间锁相最高阶超模,然而唯有基超模远场分布是中心单瓣结构,输出接近衍射极限。为得到最小谱宽、最小发散角、最大功率密度输出,必须将外腔镜倾斜β=λ/2d(λ为工作波长,d为列阵周期),这使得仅有基超模光能成像于发光单元内而被允许振荡。应用此

改善高功率激光二极管阵列光束质量的一种新方法

根据波导模理论,推导了高功率激光二极管阵列的远场分布,根据其分布特点,设计了一种离轴外腔.运用这种外腔,在工作电流为17A时,光束的束宽积从自由运转时的1100mm.mrad减小到128mm.mrad,二极管阵列的光束质量提高了8.5倍左右,输出功率约为自由运转时的75%.

机载测深激光雷达千赫兹全固态激光器设计及特性研究

将千赫兹高功率全固态Nd：YAG激光器的增益介质当作厚透镜处理，使用矩阵的方法对等效热透镜腔进行分析。采用多条半导体激光列阵侧向紧凑抽运结构设计，提高了增益介质光抽运的均匀性。根据实际抽运功率，通过模拟计算，设计了平凸非稳腔。选择的凸面全反镜的最佳曲率半径有效地补偿了增益介质热透镜效应，激光器实现了动态稳腔运转，激光脉冲能量输出斜度效率大于13％，光束发散角优于1.3mrad。

高重复率半导体激光抽运Nd：YAG放大器激光特性的实验研究

实验研究了高重复率、大功率半导体激光二极管阵列（LDA）侧面环绕抽运的Nd：YAG激光放大器的放大特性、热焦距变化和热致双折射效应引起的退偏特性。偏振光绎千赫兹高功率单通激光放大器，获得约3倍的光脉冲能量放大，脉冲宽度基本保持不变，其输出的P分量与S分量的能量比趋于常数3：1，实验测得的能量放大倍率及放大光束的椭圆偏振度与理论预期吻合很好。

LD 侧面抽运Nd :YAG陶瓷激光器运转条件下归一化热参数优化理论及实验研究

The suppressing effect of laser extraction on the non-radiation transition process is taken into account when the heat model of gain media is developed. Based on the developed heat model, the heat generation in the operating LD side-pumped Nd: YAG ceramic lasers is quantified through using the normalized heating parameter, which can be deduced from the experimental results of the slope efficiency and the absorbed pumping power of the gain media. The main factors which influence on the heat generation are investigated by studying the normalized heating parameter, and the results show that the changes of the laser extraction efficiency, the beam overlap efficiency and the Nd3+ concentration will result in obvious variations of the normalized heating parameter. In this work, the laser extraction efficiency increases to 0.905 by the optimization of the transmission of the output coupling, and the normalized heating parameter decrease to 0.474, correspondingly.

高功率板条激光器的研究进展

板条激光器，特别是LD抽运的板条激光器，作为高功率同体激光器的一个重要发展方向，在军用和工业应用等领域有着较好的应用前景。综述了板条激光器的抽运、冷却方式以及谐振腔设计方面的进展，并对其应用前景进行展望。

半导体激光直接倍频的488nm蓝光激光器

利用波导型准相位匹配周期极化反转铌酸锂（PPLN）晶体直接倍频波长为976nm的连续半导体激光二极管，在最佳晶体工作温度（28℃）下，获得了波长为488nm的连续蓝光输出，最大输出功率大于20mW。所用的晶体尺寸为8mm×1．4mm×1mm，波导截面为4．5μm×3．5μm，极化周期为5．2μm。研究了波导型周期极化反转铌酸锂晶体的倍频效率与温度的关系，与普通的周期极化反转铌酸锂相比，倍频效率与温度关系的敏感度较低。同时，由于晶体可以在室温下工作，简化了加温与温控部件，提高了整机的工作效率。在此实验的基础

部分抽运的板条激光器的热效应分析

基于热传导方程和高斯-赛德尔数值计算方法，对部分抽运板条激光器的温度分布、热应力和热致折射率变化等热效应进行了详细分析，并与单侧抽运及双侧抽运方式进行了比较。结果表明，设计合理的部分抽运板条激光器，可以获得较高的抽运效率，其热效应相比于均匀抽运的情况并没有显著劣化，不论是采用锯齿形传播方式还是直线传播方式的激光器都可以获得较好的光束质量，当一束高斯激光直线经过板条晶体中部时，光束质量因子为1．4，若采用锯齿形传播方式，则光束质量因子可提高到1．1。

激光二极管连续抽运电光调Q Nd：YVO4激光器

报道了全固态激光器连续抽运高重复率电光调Q的实验和理论分析结果。用LGS（La3Ga5SiO14）晶体作电光调Q元件，在激光二极管（LD）端面抽运Nd：YVO4激光器中实现了较高重复率的电光调Q输出。实验中在10^4Hz重复率下，抽运功率为28w时，平均功率超过5W，脉冲宽度为7ns，峰值功率为70kW，并对不同重复率时的脉冲输出进行了比较，在低重复率下，脉宽〈6．5ns，峰值功率超过100kW。在理论上，通过对连续抽运时的电光调Q速率方程进行修正，并考虑放大自发辐射（ASE）的影响，对调Q激光器的储能过

输出5W的电光调Q Nd：YAG陶瓷激光器

研究了激光二极管（LD）侧向抽运的Nd：YAG陶瓷电光调Q激光器的激光输出特性。该激光器采用九组激光二极管线阵列（LDA）侧面紧密环绕均匀排布的抽运结构，并用微通道热汇冷却技术冷却。在电光调Q方式下，重复频率为100Hz，抽运单脉冲能量为416mJ时，用尺寸为庐5mm×75mm，掺杂原子数分数为1％的Nd：YAG陶瓷棒，获得50mJ的1064nm激光输出，脉冲宽度为12ns，斜率效率达24％。并实验测量和分析了偏振片，KD^＊P晶体，四分之一波片等调Q器件的插入损耗。测量了输出激光时间波形和光斑的光强空间

双侧面90°抽运微通道致冷Yb：YAG板条激光器

报道了采用带有微柱镜的激光二极管阵列（LDA）双侧面90°排布抽运的Yb：YAG板条激光器，实验中使用的激光晶体尺寸为6mm×10mm×1mm，掺杂原子数分数为3％。抽运光通过自行设计的聚光系统聚焦成10mm×1mm的光斑进行抽运，聚光系统的效率为75％，晶体表面功率密度达到1．9kW／cm^2，晶体内抽运光交叠区的体功率密度达到38kW／cm^3，远高于阈值的1．7kW／cm^3。当激光器采用平一凹腔结构，耦合输出为6％时激光单脉冲输出能量最高为25．5mJ，斜率效率为13％。插入声光调Q晶体后获得4．

LD抽运的Nd：YLF／Cr^4＋：YAG被动调Q激光器

报道了激光二极管（LD）抽运的Nd：YLF激光器，采用平凹腔结构，分别用两片Cr^4＋：YAG可饱和吸收晶体，实现了被动调Q，输出激光波长为1053nm。采用厚度为0．5mm小信号透过率为90％的Cr^4＋ YAG，在泵浦功率最大为17W时，输出脉冲宽度为60．6ns，平均功率为1．5W，重复频率为9．5kHz，单脉冲能量为157．9mJ；采用厚度为0．55mm小信号透过率为95％的Cr^4＋ YAG，在泵浦功率最大为17W时，输出脉冲宽度为68．6ns，平均功率为1．35W，重复频率为14kHz，单脉冲