975 resultados para CHEMICAL PREPARATION


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Newer strategies for the synthesis of inorganic solids have made a great impact on present-day materials chemistry. In this article, typical case studies of synthesis involving new methods and soft chemical routes are discussed besides recent results from nebulized spray pyrolysis and synthesis of nanoscale metal and alloy particles.

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Controlled pyrolysis of Al(OBus)(3), Zr(OPrn)(4) and their mixtures in ethyl acetate induced using microwaves of 2.45 GHz frequency has been carried out. Microwave irradiation yields second-stage precursors for the preparation of respective oxides and their composites. It is observed that the microwave irradiation has a directive influence on the morphology of the ultimate oxide products. Al2O3, ZrO2 and the two composites 90% Al2O3-10% ZrO2 and 90% ZrO2-10% Al2O3 are also found to be sintered to very high densities within 35 min of microwave irradiation by the use of beta-SiC as a secondary susceptor.

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Cd(0.75)PS(3)A(0.5)(H2O)(y) [A = Na, K and Cs], synthesized by the ion-exchange intercalation reaction of the insulating layered CdPS3, exhibits interesting electrical properties. The electrical properties are strongly dependent on the extent of hydration of the alkali ion which resides in the interlamellar space. In the potassium and caesium ion-exchanged compounds, y = I, the lattice expansion is similar to 3 Angstrom and the electric response characteristic of a dielectric. In the as prepared A = Na compound, y = 2, the lattice expansion is 5.6 Angstrom, the compound is conducting with a DC conductance of 3 x 10(-5) S cm(-1) at 300 K. Cd0.75PS3Na0.5(H2O)(y), y = 2, on evacuation or on heating looses water, reversibly, to form a y = 1 phase with electrical properties similar to that of the K and Cs ion exchange intercalation compounds.

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A range of novel chiral tellurium compounds having an azomethine functional group in the position ortho to tellurium has been synthesized by the reaction of the tellurium-containing aldehydes bis(o-formylphenyl) telluride (1) and o-(butyltelluro)benzaldehyde (4) with chiral amines (R)-(+)-(1-pheylethylamine) and (1R,2S)-(-)-norephedrine, respectively. The precursor aldehydes were prepared by using a reported procedure with slight but advantageous modifications. During the preparation of o-(butyltelluro)benzaldehyde, interesting side products, namely bis(o-formylphenyl) ditelluride ethylene acetal 5, bis(o-formylphenyl) tritelluride (6), and bis(o-formylphenyl) ditelluride (7) were isolated in moderate yields. The ditelluride 7 has been characterized by single-crystal X-ray diffraction studies. The liquid Schiff bases 10 and 11 were further characterized by derivatizing with liquid bromine. The title compound was obtained in excellent yield by reacting the Schiff base 11 with elemental bromine. Detailed NMR studies indicated the presence of a rigid environment for the hydroxyl group. Single-crystal X-ray determinations of the crystals obtained from the different batches indicated. the presence of the two pseudopolymorphic forms 13a and 13b, respectively. In the case of 13a there is one molecule of CH3CN as solvent of crystallization, whereas in 13b half a molecule of CH3CN per molecule of the title compound lies along the 2-fold axis. In 13a the hydroxyl hydrogen is hydrogen-bonded to the nitrogen of the solvent molecule, whereas in 13b it is hydrogen-bonded to the bromine of the neighboring molecule.

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A simple, novel, and fast method of preparation of metal nitride powders (GaN, TiN, and VN) using microwave-assisted carbothermal reduction and nitridation has been demonstrated. The procedure uses the respective oxides and amorphous carbon powder as the starting materials. Ammonia gas is found to be more effective in nitridation than high-purity N-2 gas. Complete nitridation is achieved by the use of a slight excess of amorphous carbon. Metals themselves are not found to be effectively nitrided. The products were characterized using XRD, TEM, and SAED and found to possess good crystallinity and phase purity. The method can be of general applicability for the preparation of metal nitrides.

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Several vanadium, tungsten, and molybdenum oxide bronzes have been prepared using microwave irradiation. Metal oxides and alkali metal iodides were used as starting materials, Intermittent grinding and inert atmosphere were found to be necessary for the synthesis of most of the bronzes, The reaction temperatures are remarkably lower than those employed for conventional synthetic techniques and the microwave assisted reactions proceed at extremely fast rates. The microwave synthesized bronzes consist of particles having long, rectangular rod-like morphology. (C) 1999 Academic Press.

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ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.

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The influence of mechanical activation on the formation of Bi2VO5.5 bismuth vanadate (BiV) phase, was investigated by ball-milling a stoichiometric mixture of bismuth oxide and vanadium pentoxide. The structural evolution of the desired BN phase, via an intermediate BiVO4,phase, was investigated using X-ray powder diffraction; (XRD), differential thermal analysis (DTA) and transmission electron microscopy (TEM). Milling for 54h. yielded monophasic gamma-BiV powders with an average crystallite size of 30 nm. The electron paramagnetic resonance (EPR) peaks associated with the V4+ ions are stronger and broader in nanocrystalline (n) BN than in the conventionally prepared microcrystalline (m) BN, suggesting theta significant portion of V5+ has been transformed to V4+ during milling. The optical bandgap of n-BiV was found to be higher than that of m-BiV. High density (97% of the theoretical density), fine-grained (average grain-size of 2 tun) ceramics with uniform grain-size distribution could be fabricated using n-BiV powders. These fine-grained ceramics exhibit improved dielectric, pyre and ferroelectric properties. (C) 1999 Elsevier Science S.A. All rights reserved.

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The adsorption of poly(acrylic acid) (PAA) and poly(vinyl alcohol) (PVA) onto alumina has been studied as a function of pH, both individually and in the presence of each other. The adsorption density of PAA is found to decrease with an increase of pH while that of PVA shows the opposite trend. In a binary system containing PAA and PVA, the presence of PVA does not affect the adsorption of PAA onto alumina, but the addition of PAA diminishes the adsorption of PVA in the pH range investigated. The adsorption isotherm of PAA at acidic pH exhibits high-affinity Langmuirian behavior. The isotherms for PVA appear rounded and are of the low-affinity type, Once again the adsorption isotherms of PAA remain unaltered in the presence of PVA whereas those of PVA are significantly affected resulting in a lowering of the adsorption density consequent to PAA addition. A variation in the sequence of addition of PAA and PVA does not affect the adsorption behavior of either of the polymers, The electrokinetic behavior of alumina with PAA is hardly influenced by the addition of PVA, On the other hand, the electrophoretic mobility of alumina in the presence of PVA is significantly altered in the presence of PAA and closely resembles the trend observed with PAA alone. Desorption studies reveal that over 80% of PVA could be desorbed in the pH range 3-9 whereas in the case of PAA, the percent desorption increases from 20 to about 70% as the pH is increased from about 3 to 8. Solution conductivity tests confirm interaction of aluminum species and PAA in the bulk solution. FTIR spectroscopic data provide evidence in support of hydrogen bonding and chemical interaction in the case of the PAA-alumina system and hydrogen bonding with respect to the PVA-alumina interaction. (C) 1999 Academic Press.

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Recently, we demonstrated a very general route to monolithic macroporous materials prepared without the use of templates (Rajamathi et al. J. Mater. Chem. 2001, 11, 2489). The route involves finding a precursor containing two metals, A and B, whose oxides are largely immiscible. Firing of the precursor followed by suitable sintering results in a monolith from which one of the oxide phases can be chemically leached out to yield a macroporous mass of the other oxide phase. The metals A and B that we employed in the demonstration were Ni and Zn. From the NiO-ZnO monolith that was obtained by decomposing the precursor, ZnO could be leached out at high pH to yield macroporous NiO. In the present work, we show that combustion-chemical (also called self-propagating) decomposition of a mixture of Ni and Zn nitrates with urea as a fuel yields an intimate mixture of the oxides that can be sintered and leached with alkali to form a macroporous NiO monolith. The new process that we present here thereby avoids the need for a crystalline single-source precursor. A novel and unanticipated aspect of the present work is that the combination of high temperatures and rapid quenching associated with combustion synthesis results in an intimate mixture of wurtzite ZnO and the metastable rock-salt Ni1-xZnxO where x is about 0.3. Leaching this monolith with alkali gives a macroporous mass of rock-salt Ni1-xZnxO, which upon reduction in H-2/Ar forms macroporous Ni and ZnO. There are thus two stages in the process that lead to two modes of pore formation. The first is associated with leaching of ZnO by alkali. The second is associated with the reduction of porous Ni1-xZnxO to give porous Ni and ZnO.

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We have investigated the microstructure of thin films grown by metal-organic chemical vapour deposition using a beta-diketonate complex of cobalt, namely cobalt (11) acetylacetonate. Films were deposited on three different substrates: Si(100), thermally oxidised silicon [SiO2/Si(100)] and glass at the same time. As-grown films were characterised by X-ray diffraction, scanning electron microscopy, scanning tunnelling microscopy, atomic force microscopy and secondary ion mass spectrometry. Electrical resistivity was measured for all the films as a function of temperature. We found that films have very fine grains, resulting in high electrical resistivity Further, film microstructure has a strong dependence on the nature of the substrate and there is diffusion of silicon and oxygen into cobalt from the substrate. (C) 2002 Elsevier Science B.V. All rights reserved.

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Fragility is viewed as a measure of the loss of rigidity of a glass structure above its glass transition temperature. It is attributed to the weakness of directional bonding and to the presence of a high density of low-energy configurational states. An a priori fragility function of electronegativities and bond distances is proposed which quite remarkably reproduces the entire range of reported fragilities and demonstrates that the fragility of a melt is indeed encrypted in the chemistry of the parent material. It has also been shown that the use of fragility-modified activation barriers in the Arrhenius function account for the whole gamut of viscosity behavior of liquids. It is shown that fragility can be a universal scaling parameter to collapse all viscosity curves on to a master plot.

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Thin films of the semiconducting, monoclinic vanadium dioxide, VO2(M) have been prepared on ordinary glass by two methods: directly by low-pressure metalorganic chemical vapor deposition (MOCVD), and by argon-annealing films of the VO2(B) phase deposited by MOCVD. The composition and microstructure of the films have been examined by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Films made predominantly of either the B or the M phase, as deposited, can only be obtained over a narrow range of deposition temperatures. At the lower end of this temperature range, the as-deposited films are strongly oriented, although the substrate is glass. This can be understood from the drive to minimize surface energy. Films of the B phase have a platelet morphology, which leads to an unusual microstructure at the lower-deposition temperatures. Those grown at similar to370 degreesC convert to the metallic, rutile (R) phase when annealed at 550 degreesC, whereas those deposited at 420 degreesC transform to the R phase only at 580 degreesC. (When cooled to room temperature, the annealed films convert reversibly from the R phase to the M phase.) Electron microscopy shows that annealing leads to disintegration of the single crystalline VO2(B) platelets into small crystallites of VO2(R), although the platelet morphology is retained. When the annealing temperature is relatively low, these crystallites are nanometer sized. At a higher-annealing temperature, the transformation leads to well-connected and similarly oriented large grains of VO2(R), enveloped in the original platelet. The semiconductor-metal transition near 68 degreesC leads to a large jump in resistivity in all the VO2(M) films, nearly as large as in epitaxial films on single-crystal substrates. When the annealed films contain well-connected large grains, the transition is very sharp. Even when preferred orientation is present, the transition is not as sharp in as-deposited VO2(M), because the crystallites are not densely packed as in annealed VO2(B). However, the high degree of orientation in these films leads to a narrow temperature hysteresis. (C) 2002 American Institute of Physics.