985 resultados para 0.22 per mil
Resumo:
The family Sisoridae is one of the largest and most diverse Asiatic catfish families, most species occurring in the water systems of the Qinhai-Tibetan Plateau and East Himalayas. To date published morphological and molecular phylogenetics hypotheses of sisorid catfishes are part congruent, and there are some areas of significant disagreement with respect to intergeneric relationships. We used mitochondrial cytochrome b and 16S rRNA gene sequences to clarify existing gaps in phylogenetics and to test conflicting vicariant and dispersal biogeographical hypotheses of Chinese sisorids using dispersal-vicariance analysis and weighted ancestral area analysis in combination with palaeogeographical data as well as molecular clock calibration. Our results suggest that: (1) Chinese sisorid catfishes form a monophyletic group with two distinct clades, one represented by (Gagata (Bagarius, Glyptothorax)) and the other by (glyptosternoids, Pseudecheneis); (2) the glyptosternoid is a monophyletic group and Glyptosternum, Glaridoglanis, and Exostoma are three basal species having a primitive position among it; (3) a hypothesis referring to Pseudecheneis as the sister group of the glyptosternoids, based on morphological evidence, is supported; (4) the genus Pareuchiloglanis, as presently defined, is not monophyletic; (5) congruent with previous hypotheses, the uplift of Qinghai-Tibetan Plateau played a primary role in the speciation and radiation of the Chinese sisorids; and (6) an evolutionary scenario combining aspects of both vicariance and dispersal theory is necessary to explain the distribution pattern of the glyptosternoids. In addition, using a cytochrome b substitution rate of 0.91% per million years and 0.23% for 16S rRNA, we tentatively date that the glyptosternoids most possibly originated in Oligocene-Miocene boundary (19-24Myr), and radiated from Miocene to Pleistocene, along with a center of origin in the Irrawaddy-Tsangpo drainages and several rapid speciation in a relatively short time. (c) 2005 Elsevier Inc. All rights reserved.
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MgO is a promising gate dielectric and surface passivation film for GaN/AlGaN transistors, but little is known of the band offsets in the MgO/AlN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-v) of MgO/AlN heterostructures. A value of Delta E-v=0.22 +/- 0.08 eV was obtained. Given the experimental band gap of 7.83 eV for MgO, a type-I heterojunction with a conduction band offset of similar to 1.45 eV is found. The accurate determination of the valence and conduction band offsets is important for use of III-N alloys based electronic devices.
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Shubmkov-de Haas (SdH) measurements are performed over a temperature range of 1.5-20K in AL(0.22)Ga(0.78)N/GaN heterostructures with two subbands occupied. In addition to an intermodulation between two sets of SdH oscillations from the first and second subbands, a beating in oscillatory magnetoresistance at 12K is observed, due to the mixing of the first subband SdH oscillations and 'magnetointersubband' (MIS) oscillations. A phase shift of pi between the SdH and MIS oscillations is also clearly identified. Our experimental results, i.e. that the SdH oscillations dominate at low temperature and MIS oscillations dominate at high temperature, fully comply with the expected behaviour of MIS oscillations.
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The optical properties and the band lineup in GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL) technique were investigated. It was found that the low-temperature PL is dominated by the intrinsic localized exciton emission. By fitting the experimental datawith a simple calculation, band offset of the GaN0.015As0.985/GaAs heterostructure was estimated. Moreover, DeltaE(c), the discontinuity of the conduction band was found to be a nonlinear function of the nitrogen composition (chi) and the average variation of DeltaE(c) is about 0. 110eV per % N, such smaller than that reported on the literature to (0.156 similar to 0.175 eV/N %). In addition, Qc has little change whtn N composition increares, with an experimential relation of QC approximate tox(0.25). The band bowing coefficient (b) was also studied in this paper. The measured band bowing coefficient shows a strong function of chi, giving an experimental support to the theoretic calculation of Wei Su-Huai and Zunger Alex (1996).
Resumo:
A 3(rd) order complex band-pass filter (BPF) with auto-tuning architecture is proposed in this paper. It is implemented in 0.18um standard CMOS technology. The complex filter is centered at 4.092MHz with bandwidth of 2.4MHz. The in-band 3(rd) order harmonic input intercept point (IIP3) is larger than 16.2dBm, with 50 Omega as the source impedance. The input referred noise is about 80uV(rms). The RC tuning is based on Binary Search Algorithm (BSA) with tuning accuracy of 3%. The chip area of the tuning system is 0.28 x 0.22 mm(2), less than 1/8 of that of the main-filter which is 0.92 x 0.59 mm(2). After tuning is completed, the tuning system will be turned off automatically to save power and to avoid interference. The complex filter consumes 2.6mA with a 1.8V power supply.
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7.342[kW/(m~2·d)]7.18[kg/(m~2·d)]65.0%22.559.6%
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We investigated the solid particle flow characteristics and biomass gasification in a clapboard-type internal circulating fluidized bed reactor. The effect of fluidization velocity on particle circulation rate and pressure distribution in the bed showed that fluidization velocities in the high and low velocity zones were the main operational parameters controlling particle circulation. The maximum internal circulation rates in the low velocity zone came almost within the range of velocities in the high velocity zone, when uH/umf=2.2-2.4 for rice husk and uH/umf=3.5-4.5 for quartz sand. In the gasification experiment, the air equvalence ratio (ER) was the main controlling parameter. Rice husk gasification gas had a maximum heating value of around 5000kJ/m3 when ER=0.22-0.26, and sawdust gasification gas reached around 6000-6500kJ/m3 when ER=0.175-0.24. The gasification efficiency of rice husk reached a maximum of 77% at ER=0.28, while the gasification efficiency of sawdust reached a maximum of 81% at ER=0.25.
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We observed Sgr A* using the Very Large Array (VLA) and the Giant Metrewave Radio Telescope (GMRT) at multiple centimeter and millimeter wavelengths on 2003 June 17. The measured flux densities of Sgr A*, together with those obtained from the Submillimeter Array (SMA) and the Keck II 10 m telescope on the same date, are used to construct a simultaneous spectrum of Sgr A* from 90 cm to 3.8 mu m. The simultaneous spectrum shows a spectral break at about 3.6 cm, a possible signature of synchrotron self-absorption of the strong radio outburst that occurred near epoch 2003 July 17. At 90 cm, the flux density of Sgr A* is 0.22 +/- 0.06 Jy, suggesting a sharp decrease in flux density at wavelengths longer than 47 cm. The spectrum at long cm wavelengths appears to be consistent with free-free absorption by a screen of ionized gas with a cutoff similar to 100 cm. This cutoff wavelength appears to be three times longer than that of similar to 30 cm suggested by Davies, Walsh, & Booth based on observations in 1974 and 1975. Our analysis suggests that the flux densities of Sgr A* at wavelengths longer than 30 cm could be attenuated and modulated by stellar winds from massive stars close to Sgr A*.
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,,-::0.22×108Mpa.s.m-3,1/9;5.38×10-4m3/Mpa;4,
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The deep centers in AlGaAs/GaAs graded index-separate confinement heterostructure single quantum well (GRIN-SCHSQW) laser structures grown by MBE and MOCVD have been investigated using deep level transient spectroscopy (DLTS) technique, The majority and minority carrier DLTS spectra show that the deep (hole and electron) traps (Hi and E3), having large capture cross sections and concentrations, are observed in the graded n-AlxGa1-xAs layer of laser structures in addition to the well-known DX centers. For laser structures grown by MBE, the deep hole trap H1 and the deep electron trap E3 may be spatially localized in the interface regions of discontinuous variation Al mole fraction of the n-AlxGa1-xAs layer with x = 0.20-0.43. For laser structures grown by MOCVD, the deep electron trap E3 may be spatially localized in the n-AlxGa1-xAs layer with x = 0.18-0.30, and the DX center may be spatially localized in the interface regions of discontinuous variation Al mole fraction of the AlxGa1-xAs layer with x = 0.22-0.30.
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The transitions of E0 ,E0 A0, and E in dilute GaAs1-x Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E and E0 A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.