Amplitude/frequency of spontaneous mEPSC correlates to the degree of long-term depression in the CA1 region of the hippocampal slice

Prior synaptic or cellular activity influences degree or threshold for subsequent induction of synaptic plasticity, a process known as metaplasticity. Thus, the continual synaptic activity, spontaneous miniature excitatory synaptic current (mEPSC) may correlate to the induction of long-teen depression (LTD). Here, we recorded whole-cell EPSC and mEPSC alternately in the Schaffer-CA1 synapses in brain slice of young rats, and found that this recording configuration affected neither EPSC nor mEPSC. Low frequency stimulation (LFS) induced variable magnitudes of LTD. Remarkably, larger magnitudes of LTD were significantly correlated to smaller amplitude/lower frequency of the basal mEPSC. Furthermore, under the conditions reduced amplitude/frequency of the basal mEPSC by exposure to behavioral stress immediately before slice preparation or low concentration of calcium in bath solution, the magnitudes of LTD were still inversely correlated to mEPSC amplitude/frequency. These new findings suggest that spontaneous mEPSC may reflect functional and/or structural aspects of the synapses, the synaptic history ongoing metaplasticity. (C) 2005 Elsevier B.V. All rights reserved.

Development of teaching resources for physical modelling community

Physical modelling of interesting geotechnical problems has helped clarify behaviours and failure mechanisms of many civil engineering systems. Interesting visual information from physical modelling can also be used in teaching to foster interest in geotechnical engineering and recruit young researchers to our field. With this intention, the Teaching Committee of TC2 developed a web-based teaching resources centre. In this paper, the development and organisation of the resource centre using Wordpress. Wordpress is an open-source content management system which allows user content to be edited and site administration to be controlled remotely via a built-in interface. Example data from a centrifuge test on shallow foundations which could be used for undergraduate or graduate level courses is presented and its use illustrated. A discussion on the development of wiki-style addition to the resource centre for commonly used physical model terms is also presented. © 2010 Taylor & Francis Group, London.

Degree of fourth-order coherence by double Hanbury Brown-Twiss detections

Photon quantum statistics of light can be shown by the high-order coherence. The fourth-order coherences of various quantum states including Pock states, coherent states, thermal states and squeezed vacuum states are investigated based on a double Banbury Brown Twiss (HBT) scheme. The analytical results are obtained by taking the overall efficiency and background into account.

Entanglement degree of electron pairs out of Andreev reflection

We study the entanglement degree of electron pairs emitted from an s-wave Superconductor, which Couples to two normal leads via a single-level quantum dot. Within the framework of scattering matrix theory. the concurrence is used to quantify the entanglement. And the result shows that the entanglement degree is generally influenced by the initial separation of the two electrons in a Cooper pair and the normal transmission eigenvalues T-1, T-2. But it is only determined by the eigenvalues in the tunnelling limit, T-1. T-2 << 1, what is more. it is measurable. (C) 2008 Elsevier B.V. All rights reserved.

A study of the degree of relaxation of AlGaN epilayers on GaN template

The strain state of 570nm AlXGa1-xN layers grown on 600nm GaN template by metal organic chemical vapor deposition was studied using Rutherford backscattering (RBS)/channeling and triple-axis X-ray diffraction measurements. The results showed that the degree of relaxation (R) of AlxGa1-xN layers increased almost linearly when x less than or equal to 0.42 and reached to 70% when x = 0.42. Above 0.42, the value of R varied slowly and AI(x)Ga(1-x)N layers almost full relaxed when x = 1 (AIN). In this work the underlying GaN layer was in compressive strain, which resulted in the reduction of lattice misfit between GaN and AlxGa1-xN, and a 570nm AlxGa1-xN layer with the composition of about 0.16 might be grown on GaN coherently from the extrapolation. The different shape of (0004) diffraction peak was discussed to be related to the relaxation. (C) 2004 Elsevier B.V. All rights reserved.