1000 resultados para sociala band


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Programa de doctorado: Tecnologías de Telecomunicación Avanzadas

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Electromagnetic spectrum can be identified as a resource for the designer, as well as for the manufacturer, from two complementary points of view: first, because it is a good in great demand by many different kind of applications; second, because despite its scarce availability, it may be advantageous to use more spectrum than necessary. This is the case of Spread-Spectrum Systems, those systems in which the transmitted signal is spread over a wide frequency band, much wider, in fact, than the minimum bandwidth required to transmit the information being sent. Part I of this dissertation deals with Spread-Spectrum Clock Generators (SSCG) aiming at reducing Electro Magnetic Interference (EMI) of clock signals in integrated circuits (IC) design. In particular, the modulation of the clock and the consequent spreading of its spectrum are obtained through a random modulating signal outputted by a chaotic map, i.e. a discrete-time dynamical system showing chaotic behavior. The advantages offered by this kind of modulation are highlighted. Three different prototypes of chaos-based SSCG are presented in all their aspects: design, simulation, and post-fabrication measurements. The third one, operating at a frequency equal to 3GHz, aims at being applied to Serial ATA, standard de facto for fast data transmission to and from Hard Disk Drives. The most extreme example of spread-spectrum signalling is the emerging ultra-wideband (UWB) technology, which proposes the use of large sections of the radio spectrum at low amplitudes to transmit high-bandwidth digital data. In part II of the dissertation, two UWB applications are presented, both dealing with the advantages as well as with the challenges of a wide-band system, namely: a chaos-based sequence generation method for reducing Multiple Access Interference (MAI) in Direct Sequence UWB Wireless-Sensor-Networks (WSNs), and design and simulations of a Low-Noise Amplifier (LNA) for impulse radio UWB. This latter topic was studied during a study-abroad period in collaboration with Delft University of Technology, Delft, Netherlands.

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The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

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In the last years, the importance of locating people and objects and communicating with them in real time has become a common occurrence in every day life. Nowadays, the state of the art of location systems for indoor environments has not a dominant technology as instead occurs in location systems for outdoor environments, where GPS is the dominant technology. In fact, each location technology for indoor environments presents a set of features that do not allow their use in the overall application scenarios, but due its characteristics, it can well coexist with other similar technologies, without being dominant and more adopted than the others indoor location systems. In this context, the European project SELECT studies the opportunity of collecting all these different features in an innovative system which can be used in a large number of application scenarios. The goal of this project is to realize a wireless system, where a network of fixed readers able to query one or more tags attached to objects to be located. The SELECT consortium is composed of European institutions and companies, including Datalogic S.p.A. and CNIT, which deal with software and firmware development of the baseband receiving section of the readers, whose function is to acquire and process the information received from generic tagged objects. Since the SELECT project has an highly innovative content, one of the key stages of the system design is represented by the debug phase. This work aims to study and develop tools and techniques that allow to perform the debug phase of the firmware of the baseband receiving section of the readers.

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The dissertation presented here deals with high-precision Penning trap mass spectrometry on short-lived radionuclides. Owed to the ability of revealing all nucleonic interactions, mass measurements far off the line of ß-stability are expected to bring new insight to the current knowledge of nuclear properties and serve to test the predictive power of mass models and formulas. In nuclear astrophysics, atomic masses are fundamental parameters for the understanding of the synthesis of nuclei in the stellar environments. This thesis presents ten mass values of radionuclides around A = 90 interspersed in the predicted rp-process pathway. Six of them have been experimentally determined for the first time. The measurements have been carried out at the Penning-trap mass spectrometer SHIPTRAP using the destructive time-of-fligh ion-cyclotron-resonance (TOF-ICR) detection technique. Given the limited performance of the TOF-ICR detection when trying to investigate heavy/superheavy species with small production cross sections (σ< 1 μb), a new detection system is found to be necessary. Thus, the second part of this thesis deals with the commissioning of a cryogenic double-Penning trap system for the application of a highly-sensitive, narrow-band Fourier-transform ion-cyclotron-resonance (FT-ICR) detection technique. With the non-destructive FT-ICR detection method a single singly-charged trapped ion will provide the required information to determine its mass. First off-line tests of a new detector system based on a channeltron with an attached conversion dynode, of a cryogenic pumping barrier, to guarantee ultra-high vacuum conditions during mass determination, and of the detection electronics for the required single-ion sensitivity are reported.

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Nonostante lo sforzo sempre crescente mirato allo studio delle malattie che colpiscono le sclerattinie, ancora poco si sa circa distribuzione, prevalenza, host range e fattori che concorrono alla comparsa di queste patologie, soprattutto nell’area indopacifica. Questo studio si propone quindi lo scopo di documentare la presenza della Brown Band Disease all’interno delle scogliere madreporiche dell’Arcipelago delle Maldive. Nell’arco di tempo tra Novembre e Dicembre 2013 è stata effettuata una valutazione di tipo quantitativo di tale patologia su tre isole appartenenti l’Atollo di Faafu, rispettivamente Magoodhoo, Filitheyo e Adangau. Queste tre isole sono caratterizzate da un diverso sfruttamento da parte dell’uomo: la prima isola è abitata da locali, la seconda caratterizzata dalla presenza di un resort e l’ultima, un’isola deserta. Al fine di valutare prevalenza, distribuzione e host range della BrBD sono stati effettuati belt transect (25x2 m), point intercept transect e analisi chimico fisiche delle acque. La Brown Band Disease è risultata essere diffusa tra le isole con prevalenze inferiori al 0,50%. Queste non hanno mostrato differenze significative tra le isole, facendo quindi ipotizzare che i diversi valori osservati potrebbero essere imputati a variazioni casuali e naturali. In tutta l’area investigata, le stazioni più profonde hanno mostrato valori di prevalenza maggiori. La patologia è stata registrata infestare soprattutto il genere Acropora (con prevalenza media totale inferiore all’1%) e in un solo caso il genere Isopora. È stato dimostrato come sia presente una correlazione negativa tra densità totale delle sclerattinie e la prevalenza della Brown Band sul genere Acropora. É stato inoltre notato come vi fosse una correlazione positiva tra la prevalenza della BrBD e la presenza del gasteropode Drupella sulle colonie già malate. Poiché il principale ospite della patologia è anche il più abbondante nelle scogliere madreporiche maldiviane, si rendono necessari ulteriori accertamenti e monitoraggi futuri della BrBD.

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Lo studio delle malattie che colpiscono i coralli rappresenta un campo di ricerca nuovo e poche sono le ricerche concentrate nell’Oceano Indo-Pacifico, in particolare nella Repubblica delle Maldive. Lo scopo di questa ricerca è stato approfondire le conoscenze riguardo distribuzione, prevalenza e host range della Skeleton Eroding Band (SEB) nell’atollo di Faafu. Durante il lavoro, svolto in campo tra il novembre e il dicembre 2013, sono state indagate le isole di: Magoodhoo, Filitheyo e Adangau al fine di rilevare differenze nei livelli di prevalenza della SEB in relazione ai diversi gradi di utilizzo da parte dell’uomo delle 3 isole. Il piano di campionamento ha previsto la scelta casuale, in ciascuna delle isole, di 4 siti in cui sono stati realizzati 3 belt transect e 3 point intercept transect a 2 profondità predefinite. La SEB è stata ritrovata con una prevalenza media totale di 0,27%. Dai risultati dell’analisi statistica le differenze fra le isole non sono apparse significative, facendo ipotizzare che i livelli di prevalenza differiscano a causa di oscillazioni casuali di carattere naturale e che quindi non siano dovute a dinamiche legate al diverso sfruttamento da parte dell’uomo. I generi Acropora e Pocillopora sono risultati quelli maggiormente colpiti con valori di prevalenza totale di 0,46% e 1,33%. Infine è stata rilevata una correlazione positiva tra il numero di colonie di madrepore affette dalla SEB e il numero di colonie in cui la malattia è associata alla presenza di lesioni provocate da danni meccanici. I dati di prevalenza ottenuti e le previsioni di cambiamenti climatici in grado di aumentare distribuzione, host range, abbondanza della patologia, pongono l’accento sulla necessità di chiarire il ruolo delle malattie dei coralli nel deterioramento, resilienza e recupero dei coral reefs, al fine di attuare politiche di gestione adatte alla protezione di questi fragili ecosistemi.

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Heusler compounds are key materials for spintronic applications. They have attracted a lot of interest due to their half-metallic properties predicted by band structure calculations.rnThe aim of this work is to evaluate experimentally the validity of the predictions of half metallicity by band structure calculations for two specific Heusler compounds, Co2FeAl0.3Si0.7 and Co2MnGa. Two different spectroscopy methods for the analysis of the electronic properties were used: Angular Resolved Ultra-violet Photoemission Spectroscopy (ARUPS) and Tunneling Spectroscopy.rnHeusler compounds are prepared as thin films by RF-sputtering in an ultra-high vacuum system. rnFor the characterization of the samples, bulk and surface crystallographic and magnetic properties of Co2FeAl0.3Si0.7 and Co2MnGa are studied. X-ray and electron diffraction reveal a bulk and surface crossover between two different types of sublattice order (from B2 to L21) with increasing annealing temperature. X-ray magnetic circular dichroism results show that the magnetic properties in the surface and bulk are identical, although the magnetic moments obtained are 5% below from the theoretically predicted.rnBy ARUPS evidence for the validity of the predicted total bulk density of states (DOS) was demonstrated for both Heusler compounds. Additional ARUPS intensity contributions close to the Fermi energy indicates the presence of a specific surface DOS. Moreover, it is demonstrated that the crystallographic order, controlled by annealing, plays an important role on brodening effects of DOS features. Improving order resulted in better defined ARUPS features.rnTunneling magnetoresistance measurements of Co2FeAl0.3Si0.7 and Co2MnGa based MTJ’s result in a Co2FeAl0.3Si0.7 spin polarization of 44%, which is the highest experimentally obtained value for this compound, although it is lower than the 100% predicted. For Co2MnGa no high TMR was achieved.rnUnpolarized tunneling spectroscopy reveals contribution of interface states close to the Fermi energy. Additionally magnon excitations due to magnetic impurities at the interface are observed. Such contributions can be the reason of a reduced TMR compared to the theoretical predictions. Nevertheless, for energies close to the Fermi energy and for Co2MnGa, the validity of the band structure calculations is demonstrated with this technique as well.

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This thesis presents a CMOS Amplifier with High Common Mode rejection designed in UMC 130nm technology. The goal is to achieve a high amplification factor for a wide range of biological signals (with frequencies in the range of 10Hz-1KHz) and to reject the common-mode noise signal. It is here presented a Data Acquisition System, composed of a Delta-Sigma-like Modulator and an antenna, that is the core of a portable low-complexity radio system; the amplifier is designed in order to interface the data acquisition system with a sensor that acquires the electrical signal. The Modulator asynchronously acquires and samples human muscle activity, by sending a Quasi-Digital pattern that encodes the acquired signal. There is only a minor loss of information translating the muscle activity using this pattern, compared to an encoding technique which uses astandard digital signal via Impulse-Radio Ultra-Wide Band (IR-UWB). The biological signals, needed for Electromyographic analysis, have an amplitude of 10-100μV and need to be highly amplified and separated from the overwhelming 50mV common mode noise signal. Various tests of the firmness of the concept are presented, as well the proof that the design works even with different sensors, such as Radiation measurement for Dosimetry studies.

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