995 resultados para plasma sputtering


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The present study reports the behavioural and enzymological responses in a freshwater teleost fish, Cyprinus carpio var. communis, exposed to acute and sublethal toxicities of mercuric chloride. During acute treatment, significant behavioural changes like erratic swimming, excess mucus secretion and increased opercular movements were noticed. During acute and sublethal treatments, both aspartate amino transferase and alanine amino transferase activity increased throughout the study period. Comparing the treatments, the changes in enzyme activities were found high in acute treatment and all the values were significant at 5% level. The above findings can be used as non-specific biomarkers of environmental pollutants.

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In this paper we study the effect of introducing nitrogen into different carbon networks. Two kinds of carbon nitride films were deposited: (a) Using a DC-magnetron sputtering system sp2 bonded carbon nitride (a-CN) films were deposited and (b) Using a combination of filtered cathodic vacuum arc and a low-pressure N2 plasma source, N was introduced into sp3 carbon networks (ta-C), leading to the formation of a more dense CN film named ta-CN. For ta-CN films we found that the optical gap initially decreases as the N content and the sp2 fraction rises, but above a certain N quantity there is a level-off of the value, and the gap then remains constant despite further increases in the fraction and clustering of the sp2 phase. However, for a-CN films the optical gap increases with the nitrogen content. These two different trends are not easily explained using the same framework as that for carbon films, in which any decrease in the band gap is associated to an increase in the sp2 fraction or its clustering. Here we discuss the conditions that lead to high optical gap in sp2-bonded carbon nitride samples, which are clearly not associated to the presence of any crystalline super-hard phase. We also compared other differences in properties observed between the two films, such as deposition rate, infrared and Raman spectra. © 2003 Elsevier Science B.V. All rights reserved.

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DLC films with different thicknesses (from 100 nm to 1.9 μm) were deposited using sputtering of graphite target in pure argon atmosphere without substrate heating. Film microstructures (sp2/sp3 ratio) and mechanical properties (modulus, hardness, stress) were characterized as a function of film thickness. A thin layer of aluminum about 60 nm was deposited on the DLC film surface. Laser micromachining of Al/DLC layer was performed to form microcantilever structures, which were released using a reactive ion etching system with SF6 plasma. Due to the intrinsic stress in DLC films and bimorph Al/DLC structure, the microcantilevers bent up with different curvatures. For DLC film of 100 nm thick, the cantilever even formed microtubes. The relationship between the bimorph beam bending and DLC film properties (such as stress, modulus, etc.) were discussed in details. © 2005 Elsevier B.V. All rights reserved.

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Semenogelin I (SgI) is one of the most abundant proteins in human seminal plasma. SgI plays a key role in sperm coagulation and spermatozoon immobilization. in addition, SgI and/or its proteolytic fragments are involved in regulating spermatozoon motility

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To investigate whether aberrant hypermethylation in plasma DNA could be used as diagnosis makers for hepatocellular carcinoma (HCC), we performed methylation-specific PCR (MSP) to check the methylation status of five tumor associated genes in 36 cases of

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The adhesion of bovine chondrocytes and human osteoblasts to three titania-based coatings, formed by plasma electrolytic oxidation (PEO), was compared to that on uncoated Ti-6Al-4V substrates, and some comparisons were also made with plasma sprayed hydroxyapatite (HA) coatings. This was done using a centrifuge, with accelerations of up to 160,000 g, so as to induce buoyancy forces that created normal or shear stresses at the interface. It is shown that, on all surfaces, it was easier to remove cells under normal loading than under shear loading. Cell adhesion to the PEO coatings was stronger than that on Ti-6Al-4V and similar to that on HA. Cell proliferation rates were relatively high on one of the PEO coatings, which was virtually free of aluminium, but low on the other two, which contained significant levels of aluminium. It is concluded that the Al-free PEO coating offers promise for application to prosthetic implants.

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With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

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This paper examines the possibility of using a background gas medium to enhance the current available from low threshold carbon cathodes. The field emission current is used to initiate a plasma in the gas medium, and thereby achieve a current multiplication effect. Results on the variation of anode current as a function of electric field and gas pressure are presented. These are compared with model calculations to verify the principles of operation. The influence of ion bombardment on the long term performance thin film carbon cathodes is examined for He and Ar multiplication plasmas. A measure of the influence of current multiplication on display quality is presented by examining light output from two standard low voltage phosphors. Also studied are the influence of doping the carbon with N to lower the threshold voltage for emission as well as the consequent impact on anode current from the plasma.