Intelligent electric vehicle heuristic for energy resource management using simulated annealing

The smart grid concept appears as a suitable solution to guarantee the power system operation in the new electricity paradigm with electricity markets and integration of large amounts of Distributed Energy Resources (DERs). Virtual Power Player (VPP) will have a significant importance in the management of a smart grid. In the context of this new paradigm, Electric Vehicles (EVs) rise as a good available resource to be used as a DER by a VPP. This paper presents the application of the Simulated Annealing (SA) technique to solve the Energy Resource Management (ERM) of a VPP. It is also presented a new heuristic approach to intelligently handle the charge and discharge of the EVs. This heuristic process is incorporated in the SA technique, in order to improve the results of the ERM. The case study shows the results of the ERM for a 33-bus distribution network with three different EVs penetration levels, i. e., with 1000, 2000 and 3000 EVs. The results of the proposed adaptation of the SA technique are compared with a previous SA version and a deterministic technique.

Intelligent energy resource management considering vehicle-to-grid: A simulated annealing approach

This paper proposes a simulated annealing (SA) approach to address energy resources management from the point of view of a virtual power player (VPP) operating in a smart grid. Distributed generation, demand response, and gridable vehicles are intelligently managed on a multiperiod basis according to V2G user´s profiles and requirements. Apart from using the aggregated resources, the VPP can also purchase additional energy from a set of external suppliers. The paper includes a case study for a 33 bus distribution network with 66 generators, 32 loads, and 1000 gridable vehicles. The results of the SA approach are compared with a methodology based on mixed-integer nonlinear programming. A variation of this method, using ac load flow, is also used and the results are compared with the SA solution using network simulation. The proposed SA approach proved to be able to obtain good solutions in low execution times, providing VPPs with suitable decision support for the management of a large number of distributed resources.

Simulated annealing metaheuristic to solve the optimal power flow

The optimal power flow problem has been widely studied in order to improve power systems operation and planning. For real power systems, the problem is formulated as a non-linear and as a large combinatorial problem. The first approaches used to solve this problem were based on mathematical methods which required huge computational efforts. Lately, artificial intelligence techniques, such as metaheuristics based on biological processes, were adopted. Metaheuristics require lower computational resources, which is a clear advantage for addressing the problem in large power systems. This paper proposes a methodology to solve optimal power flow on economic dispatch context using a Simulated Annealing algorithm inspired on the cooling temperature process seen in metallurgy. The main contribution of the proposed method is the specific neighborhood generation according to the optimal power flow problem characteristics. The proposed methodology has been tested with IEEE 6 bus and 30 bus networks. The obtained results are compared with other wellknown methodologies presented in the literature, showing the effectiveness of the proposed method.

Economic, environmental and mixed objective functions in non-linear process optimization using simulated annealing and tabu search

Screening of topologies developed by hierarchical heuristic procedures can be carried out by comparing their optimal performance. In this work we will be exploiting mono-objective process optimization using two algorithms, simulated annealing and tabu search, and four different objective functions: two of the net present value type, one of them including environmental costs and two of the global potential impact type. The hydrodealkylation of toluene to produce benzene was used as case study, considering five topologies with different complexities mainly obtained by including or not liquid recycling and heat integration. The performance of the algorithms together with the objective functions was observed, analyzed and discussed from various perspectives: average deviation of results for each algorithm, capacity for producing high purity product, screening of topologies, objective functions robustness in screening of topologies, trade-offs between economic and environmental type objective functions and variability of optimum solutions.

A New Heuristic Providing an Effective Initial Solution for a Simulated Annealing approach to Energy Resource Scheduling in Smart Grids

An intensive use of dispersed energy resources is expected for future power systems, including distributed generation, especially based on renewable sources, and electric vehicles. The system operation methods and tool must be adapted to the increased complexity, especially the optimal resource scheduling problem. Therefore, the use of metaheuristics is required to obtain good solutions in a reasonable amount of time. This paper proposes two new heuristics, called naive electric vehicles charge and discharge allocation and generation tournament based on cost, developed to obtain an initial solution to be used in the energy resource scheduling methodology based on simulated annealing previously developed by the authors. The case study considers two scenarios with 1000 and 2000 electric vehicles connected in a distribution network. The proposed heuristics are compared with a deterministic approach and presenting a very small error concerning the objective function with a low execution time for the scenario with 2000 vehicles.

The Effects of Annealing URu2Si2 on the Resistivity and Meissner Effect

The enigmatic heavy fermion URu2Si2, which is the subject of this thesis, has attracted intensive theoretical and experimental research since 1984 when it was firstly reported by Schlabitz et al. at a conference [1]. The previous bulk property measurements clearly showed that one second order phase transition occurs at the Hidden Order temperature THO ≈ 17.5 K and another second order phase transition, the superconducting transition, occurs at Tc ≈ 1 K. Though twenty eight years have passed, the mechanisms behind these two phase transitions are still not clear to researchers. Perfect crystals do not exist. Different kinds of crystal defects can have considerable effects on the crystalline properties. Some of these defects can be eliminated, and hence the crystalline quality improved, by annealing. Previous publications showed that some bulk properties of URu2Si2 exhibited significant differences between as-grown samples and annealed samples. The present study shows that the annealing of URu2Si2 has some considerable effects on the resistivity and the DC magnetization. The effects of annealing on the resistivity are characterized by examining how the Residual Resistivity Ratio (RRR), the fitting parameters to an expression for the temperature dependence of the resistivity, the temperatures of the local maximum and local minimum of the resistivity at the Hidden Order phase transition and the Hidden Order Transition Width ∆THO change after annealing. The plots of one key fitting parameter, the onset temperature of the Hidden Order transition and ∆THO vs RRR are compared with those of Matsuda et al. [2]. Different media used to mount samples have some impact on how effectively the samples are cooled because the media have different thermal conductivity. The DC magnetization around the superconducting transition is presented for one unannealed sample under fields of 25 Oe and 50 Oe and one annealed sample under fields of 0 Oe and 25 Oe. The DC field dependent magnetization of the annealed Sample1-1 shows a typical field dependence of a Type-II superconductor. The lower critical field Hc1 is relatively high, which may be due to flux pinning by the crystal defects.

Estudio del diagrama de fases CaO-Al2O3-CoO

Tesis (Maestría en Ciencias con Especialidad en Ingeniería Cerámica) UANL

Obtención de un material cerámico compuesto de MgAl2O4 en matriz de Al2O3 bajo la influencia de CaO por medio de microondas

Tesis (Maestría en Ciencias con Especialidad en Ingeniería Cerámica) U.A.N.L.

Influencia del método de preparación del catalizador de alúmina (Al2O3) dopada con Fe en la combustión catalítica del tricloroetileno (TCE).

Tesis (Maestría en Ciencias Químicas con Orientación en Procesos Sustentables) UANL, 2011.

Nuevo desarrollo de materiales a base de MgO-Espinel (MgO.Al2O3) - carbón por Oscar Díaz Toledo

Tesis (Doctor en Ing. de Materiales) U.A.N.L.

Influencia del hierro en la estructura del espinel en el sistema MgO-Al2O3-Fe2O3 sinterizado en horno convencional y mediante microondas

Tesis (Doctor en Ciencias de la Ingeniería de Materiales) UANL, 2001.

Synthesis, characterization and hydrodesulphurisation activity of CoMo/gama-Al2O3 catalyst prepared through molecular designed dispersion method

CoMo/gama-Al2O3 catalysts for hydrodesulphurisation activity were prepared by making use of the molecular designed dispersion (MDD) method. Molybdenum and cobalt pyrrolidine-N-carbodithioate (Pydtc) complexes were used for the incorporation of metals on the support. The catalysts were characterized by elemental analysis, low temperature oxygen chemisorption, temperature programmed reduction (TPR) and laser Raman spectroscopy. The hydrodesulphurisation activity of all the catalysts were carried out and results were compared with those of the catalysts prepared through the conventional method. Higher molybdenum dispersion, smaller molybdenum clusters, lower reduction temperature of catalyst and better hydrodesulphurisation activity were observed for the catalysts prepared through the MDD method

Effect of annealing on the spectral and nonlinear optical characteristics of thin films of nano-ZnO

The annealing effect on the spectral and nonlinear optical NLO characteristics of ZnO thin films deposited on quartz substrates by sol-gel process is investigated. As the annealing temperature increases from 300–1050 °C, there is a decrease in the band gap, which indicates the changes of the interface of ZnO. ZnO is reported to show two emission bands, an ultraviolet UV emission band and another in the green region. The intensity of the UV peak remains the same while the intensity of the visible peak increases with increase in annealing temperature. The role of oxygen in ZnO thin films during the annealing process is important to the change in optical properties. The mechanism of the luminescence suggests that UV luminescence of ZnO thin films is related to the transition from conduction band edge to valence band, and green luminescence is caused by the transition from deep donor level to valence band due to oxygen vacancies. The NLO response of these samples is studied using nanosecond laser pulses at off-resonance wavelengths. The nonlinear absorption coefficient increases from 2.9 ×10−6 to 1.0 ×10−4 m/W when the annealing temperature is increased from 300 to 1050 °C, mainly due to the enhancement of interfacial state and exciton oscillator strength. The third order optical susceptibility x(3) increases with increase in annealing temperature (T) within the range of our investigations. In the weak confinement regime, T2.4 dependence of x(3) is obtained for ZnO thin films. The role of annealing temperature on the optical limiting response is also studied.

Fabrication of thin films and nano columnar structures of Fe-Ni amorphous alloys and modification of its surface properties by thermal annealing and swift heavy ion irradiation for tailoring the magnetic properties

Department of Physics, Cochin University of Science and Technology

Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications

In the present studies, various copper delafossite materials viz; CuAlO2, CuGaO2, CuFeO2 , CuGa1-xFexO2, CuYO2 and CuCaxY1-xO2 were synthesised by solid state reaction technique. These copper delafossite materials were grown in thin film form by rf magnetron sputtering technique. In general copper delafossites exhibit good optical transparency. The conductivity of the CuYO2 could be improved by Ca doping or by oxygen intercalation by annealing the film in oxygen atmosphere. It has so far been impossible to improve the p-type conductivity of CuGaO2 significantly by doping Mg or Ca on the Ga site. The ptype conductivity is presumed to be due to oxygen doping or Cu Vacancies [6]. Reports in literature show, oxygen intercalation or divalent ion doping on Ga site is not possible for CuGaO2 thin films to improve the p-type conductivity. Sintered powder and crystals of CuFeO2 have been reported as the materials having the highest p-type conductivity [14, 15] among the copper and silver delafossites. However the CuFeO2 films are found to be less transparent in the visible region compared to CuGaO2. Hence in the present work, the solid solution between the CuGaO2 and CuFeO2 was effected by solid state reaction, varying the Fe content. The CuGa1-xFexO2 with Fe content, x=0.5 shows an increase in conductivity by two orders, compared to CuGaO2 but the transparency is only about 50% in the visible region which is less than that of CuGaO2 The synthesis of α−AgGaO2 was carried out by two step process which involves the synthesis of β-AgGaO2 by ion exchange reaction followed by the hydrothermal conversion of the β-AgGaO2 into α-AgGaO2. The trace amount of Ag has been reduced substantially in the two step synthesis compared to the direct hydrothermal synthesis. Thin films of α-AgGaO2 were prepared on silicon and Al2O3 substrates by pulsed laser deposition. These studies indicate the possibility of using this material as p-type material in thin film form for transparent electronics. The room temperature conductivity of α-AgGaO2 was measured as 3.17 x 10-4 Scm-1and the optical band gap was estimated as 4.12 eV. A transparent p-n junction thin film diode on glass substrate was fabricated using p-type α-AgGaO2 and n-ZnO.AgCoO2 thin films with 50% transparency in the visible region were deposited on single crystalline Al2O3 and amorphous silica substrates by RF magnetron sputtering and p type conductivity of AgCoO2 was demonstrated by fabricating transparent p-n junction diode with AgCoO2 as p-side and ZnO: Al as n-side using sputtering. The junction thus obtained was found to be rectifying with a forward to reverse current of about 10 at an applied voltage of 3 V.The present study shows that silver delafossite thin films with p-type conductivity can be used for the fabrication of active devices for transparent electronics applications.