Graphene passively Q-switched two-micron fiber lasers

We demonstrate a passively Q-switched thulium fiber laser, using a graphene-based saturable absorber. The laser is based on an all-fiber ring cavity and produces ~2.3 μs pulses at 1884nm, with a maximum pulse energy of 70 nJ. © 2011 Optical Society of America.

Graphene passively Q-switched two-micron fiber lasers

We demonstrate a passively Q-switched thulium fiber laser, using a graphene-based saturable absorber. The laser is based on an all-fiber ring cavity and produces ~2.3 μs pulses at 1884nm, with a maximum pulse energy of 70 nJ. © 2011 Optical Society of America.

Unified analytic model for current-voltage behavior in amorphous oxide semiconductor TFTs

We present a simple and semi-physical analytical description of the current-voltage characteristics of amorphous oxide semiconductor thin-film transistors in the above-threshold and sub-threshold regions. Both regions are described by single unified expression that employs the same set of model parameter values directly extracted from measured terminal characteristics. The model accurately reproduces measured characteristics of amorphous semiconductor thin film transistors in general, yielding a scatter of < 4%. © 1980-2012 IEEE.

Graphene passively Q-switched two-micron fiber lasers

We demonstrate a passively Q-switched thulium fiber laser, using a graphene-based saturable absorber. The laser is based on an all-fiber ring cavity and produces ~2.3 μs pulses at 1884nm, with a maximum pulse energy of 70 nJ. ©2011 Optical Society of America.

Numerical simulation of dicke superradiance in a semiconductor laser device

This paper reports a theoretical model for Dicke Superradiance in semiconductor laser devices. Simulations agree well with previously-observed superradiance properties and are used to optimize driving conditions and device geometry. © OSA/ANIC/IPR/Sensors/SL/SOF/SPPCom/2011.

Superradiant emission from a tapered quantum-dot semiconductor diode emitter

Superradiant emission pulses from a quantum-dot tapered device are generated on demand at repetition rates of up to 5 MHz. The pulses have durations as short as 320 fs at a wavelength of 1270 nm. © 2010 Optical Society of America.

Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy

Accurately measuring the electronic properties of nanowires is a crucial step in the development of novel semiconductor nanowire-based devices. With this in mind, optical pump-terahertz probe (OPTP) spectroscopy is ideally suited to studies of nanowires: it provides non-contact measurement of carrier transport and dynamics at room temperature. OPTP spectroscopy has been used to assess key electrical properties, including carrier lifetime and carrier mobility, of GaAs, InAs and InP nanowires. The measurements revealed that InAs nanowires exhibited the highest mobilities and InP nanowires exhibited the lowest surface recombination velocity. © 2013 Copyright SPIE.

First demonstration of a full C-band tunable WDM-PON system with novel high-temperature DS-DBR lasers

We demonstrate automatic operation of a cooler-less tunable-laser based WDM-PON system. Using a pilot-tone based overhead channel and centralized wavelength locking scheme, 1 Gb/s and 10 Gb/s data transmission is demonstrated in a multi-user set-up. © 2013 Optical Society of America.

Amorphous oxide semiconductor TFTs for displays and imaging

© 2013 IEEE. This paper reviews the mechanisms underlying visible light detection based on phototransistors fabricated using amorphous oxide semiconductor technology. Although this family of materials is perceived to be optically transparent, the presence of oxygen deficiency defects, such as vacancies, located at subgap states, and their ionization under illumination, gives rise to absorption of blue and green photons. At higher energies, we have the usual band-to-band absorption. In particular, the oxygen defects remain ionized even after illumination ceases, leading to persistent photoconductivity, which can limit the frame-rate of active matrix imaging arrays. However, the persistence in photoconductivity can be overcome through deployment of a gate pulsing scheme enabling realistic frame rates for advanced applications such as sensor-embedded display for touch-free interaction.