972 resultados para SOCIETY SOURCE CLAYS
Resumo:
We present a method to guess the realization of an arbitrarily varying source. Let TU be the type of the unknown state sequence. Our method results in a guessing moment that is within Kn (TU) + O(log n=n) of the minimum attainable guessing moment with full knowledge of source statistics, i.e., with knowledge of the sequence of states sn. The quantity Kn (TU) + O(log n=n) can be interpreted as the penalty one pays for not knowing the sequence of states sn of the source. Kn (TU) by itself is the penalty one pays for guessing with the additional knowledge that the state sequence belongs to type TU. Conversely, given any guessing strategy, for every type TU, there is a state sequence belonging to this type whose corresponding source forces a guessing moment penalty of at least Kn (TU) ¡ O(log n=n).
Resumo:
Localization of underwater acoustic sources is a problem of great interest in the area of ocean acoustics. There exist several algorithms for source localization based on array signal processing.It is of interest to know the theoretical performance limits of these estimators. In this paper we develop expressions for the Cramer-Rao-Bound (CRB) on the variance of direction-of-arrival(DOA) and range-depth estimators of underwater acoustic sources in a shallow range-independent ocean for the case of generalized Gaussian noise. We then study the performance of some of the popular source localization techniques,through simulations, for DOA/range-depth estimation of underwater acoustic sources in shallow ocean by comparing the variance of the estimators with the corresponding CRBs.
Resumo:
In a typical sensor network scenario a goal is to monitor a spatio-temporal process through a number of inexpensive sensing nodes, the key parameter being the fidelity at which the process has to be estimated at distant locations. We study such a scenario in which multiple encoders transmit their correlated data at finite rates to a distant and common decoder. In particular, we derive inner and outer bounds on the rate region for the random field to be estimated with a given mean distortion.
Thermal Weight Functions and Stress Intensity Factors for Bonded Dissimilar Media Using Body Analogy
Resumo:
In this study, an analytical method is presented for the computation of thermal weight functions in two dimensional bi-material elastic bodies containing a crack at the interface and subjected to thermal loads using body analogy method. The thermal weight functions are derived for two problems of infinite bonded dissimilar media, one with a semi-infinite crack and the other with a finite crack along the interface. The derived thermal weight functions are shown to reduce to the already known expressions of thermal weight functions available in the literature for the respective homogeneous elastic body. Using these thermal weight functions, the stress intensity factors are computed for the above interface crack problems when subjected to an instantaneous heat source.
Resumo:
Pulse Forming Line (PFL) based high voltage pulsed power systems are well suited for low impedance High Power Microwave (HPM) sources such as a virtual cathode oscillator (VIRCATOR) operating in nanosecond regimes. The system under development consists of a primary voltage source that charges the capacitor bank of a Marx pulser over a long time duration. The Marx pulser output is then conditioned by a PFL to match the requirement of the HPM diode load. This article describes the design and construction of an oil insulated pulse forming line for a REB (Relativistic Electron Beam) diode used in a VIRCATOR for the generation of high power microwaves. Design of a 250 kV/10 kA/60 ns PFL, including the PSPICE simulation for various load conditions are described.
Resumo:
The Indian Summer Monsoon (ISM) precipitation recharges ground water aquifers in a large portion of the Indian subcontinent. Monsoonal precipitation over the Indian region brings moisture from the Arabian Sea and the Bay of Bengal (BoB). A large difference in the salinity of these two reservoirs, owing to the large amount of freshwater discharge from the continental rivers in the case of the BoB and dominating evaporation processes over the Arabian Sea region, allows us to distinguish the isotopic signatures in water originating in these two water bodies. Most bottled water manufacturers exploit the natural resources of groundwater, replenished by the monsoonal precipitation, for bottling purposes. The work presented here relates the isotopic ratios of bottled water to latitude, moisture source and seasonality in precipitation isotope ratios. We investigated the impact of the above factors on the isotopic composition of bottled water. The result shows a strong relationship between isotope ratios in precipitation (obtained from the GNIP data base)/bottled water with latitude. The approach can be used to predict the latitude at which the bottled water was manufactured. The paper provides two alternative approaches to address the site prediction. The limitations of this approach in identifying source locations and the uncertainty in latitude estimations are discussed. Furthermore, the method provided here can also be used as an important forensic tool for exploring the source location of bottled water from other regions. Copyright (C) 2011 John Wiley & Sons, Ltd.
Resumo:
We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS(2) films, mechanically exfoliated onto Si/SiO(2) substrate. Our experiments reveal that the electronic states In all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below similar to 30 K, the conductivity displays oscillatory structures In gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T(0)) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges In the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well.
Resumo:
Mufflers with at least one acoustically absorptive duct are generally called dissipative mufflers. Generally, for want of systems approach, these mufflers are characterized by transmission loss of the lined duct with overriding corrections for the terminations, mean flow, etc. In this article, it is proposed that dissipative duct should be integrated with other muffler elements, source impedance and radiation impedance, by means of transfer matrix approach. Towards this end, the transfer matrix for rectangular duct with mean flow has been derived here, for the least attenuated mode. Mean flow introduces a coupling between transverse wave numbers and axial wave number, the evaluation of which therefore calls for simultaneous solution of two or three transcendental equations. This is done by means of a Newton-Raphson iteration scheme, which is illustrated here for square ducts lined with porous ceramic tiles.
Resumo:
This letter proposes the combination of a passive muffler and an active noise control system for the control of very high‐level noise in ducts used with large industrial fans and similar equipment. The analysis of such a hybrid system is presented making use of electroacoustic analogies and the transfer matrix method. It turns out that a passive muffler upstream of the input microphone can indeed lower the acoustic pressure and, hence, the power requirement of the auxiliary source. The parameter that needs to be optimized (or maximized) for this purpose is a certain velocity ratio that can readily be evaluated in a closed form, making it more or less straightforward to synthesize the configuration of an effective passive muffler to go with the active noise control system.
Resumo:
The instants at which significant excitation of vocal tract take place during voicing are referred to as epochs. Epochs and strengths of excitation pulses at epochs are useful in characterizing voice source. Epoch filtering technique proposed by the authors determine epochs from speech waveform. In this paper we propose zero-phase inverse filtering to obtain strengths of excitation pulses at epochs. Zero-phase inverse filter compensates the gross spectral envelope of short-time spectrum of speech without affecting phase characteristics. Linear prediction analysis is used to realize the zero-phase inverse filter. Source characteristics that can be derived from speech using this technique are illustrated with examples.
Resumo:
The concept of interference alignment when extended to three-source three-destination instantaneous multiple unicast network for the case where, each source-destination pair has a min-cut of 1 and zero-interference conditions are not satisfied, is known to achieve a rate of half for every source-destination pair under certain conditions [6]. This was called network alignment. We generalize this concept of network alignment to three-source three-destination multiple unicast (3S-3D-MU) networks with delays, without making use of memory at the intermediate nodes (i.e., nodes other than the sources and destinations) and using time varying Local Encoding Kernels (LEKs). This achieves half the rate corresponding to the individual source-destination min-cut for some classes of 3S-3D-MU network with delays which do not satisfy the zero-interference conditions.
Resumo:
In this paper, we have studied the effect of gate-drain/source overlap (LOV) on the drain channel noise and induced gate current noise (SIg) in 90 nm N-channel metal oxide semiconductor field effect transistors using process and device simulations. As the change in overlap affects the gate tunneling leakage current, its effect on shot noise component of SIg has been taken into consideration. It has been shown that “control over LOV” allows us to get better noise performance from the device, i.e., it allows us to reduce noise figure, for a given leakage current constraint. LOV in the range of 0–10 nm is recommended for the 90 nm gate length transistors, in order to get the best performance in radio frequency applications.