RZ-DPSK transmission at 80 Gbit/s channel rate using in-line semiconductor optical amplifiers

We numerically demonstrate the feasibility of return-to-zero differential phase-shift keying transmission at 8.0 Gbit/s channel rate using cascaded in-line semiconductor optical amplifiers.

RZ-DPSK transmission at 80 Gbit/s channel rate using in-line semiconductor optical amplifiers

We numerically demonstrate the feasibility of return-to-zero differential phase-shift keying transmission at 80 Gbit/s channel rate using cascaded in-line semiconductor optical amplifiers.

RZ-DPSK transmission at 80 Gbit/s channel rate using in-line semiconductor optical amplifiers

We numerically demonstrate the feasibility of return-to-zero differential phase-shift keying transmission at 80 Gbit/s channel rate using cascaded in-line semiconductor optical amplifiers.

Efficient 2.87 μm fiber laser passively switched using a semiconductor saturable absorber mirror

A passively switched Ho3+, Pr3+ codoped fluoride fiber laser using a semiconductor saturable absorber mirror (SESAM) is demonstrated. Q-switching and partial mode-locking were observed with the output power produced at a slope efficiency of 24% with respect to the absorbed pump power. The partially mode-locked 2.87 µm pulses operated at a repetition rate of 27.1 MHz with an average power of 132 mW, pulse energy of 4.9 nJ, and pulse width of 24 ps.

Mode-locked semiconductor lasers with optical injection

We perform characterization of the pulse shape and noise properties of quantum dot passively mode-locked lasers (PMLLs). We propose a novel method to determine the RF linewidth and timing jitter, applicable to high repetition rate PMLLs, through the dependence of modal linewidth on the mode number. Complex electric field measurements show asymmetric pulses with parabolic phase close to threshold, with the appearance of waveform instabilities at higher currents. We demonstrate that the waveform instabilities can be overcome through optical injection-locking to the continues wave (CW) master laser, leading to time-bandwidth product (TBP) improvement, spectral narrowing, and spectral tunability. We discuss the benefits of single- and dual-tone master sources and demonstrate that dual-tone optical injection can additionally improve the noise properties of the slave laser with RF linewidth reduction below instrument limits (1 kHz) and integrated timing jitter values below 300 fs. Dual-tone injection allowed slave laser repetition rate control over a 25 MHz range with reduction of all modal optical linewidths to the master source linewidth, demonstrating phase-locking of all slave modes and coherence improvement.

Numerical modelling of multilayer semiconductor devices

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Mode-locked semiconductor lasers with optical injection

We perform characterization of the pulse shape and noise properties of quantum dot passively mode-locked lasers (PMLLs). We propose a novel method to determine the RF linewidth and timing jitter, applicable to high repetition rate PMLLs, through the dependence of modal linewidth on the mode number. Complex electric field measurements show asymmetric pulses with parabolic phase close to threshold, with the appearance of waveform instabilities at higher currents. We demonstrate that the waveform instabilities can be overcome through optical injection-locking to the continues wave (CW) master laser, leading to time-bandwidth product (TBP) improvement, spectral narrowing, and spectral tunability. We discuss the benefits of single- and dual-tone master sources and demonstrate that dual-tone optical injection can additionally improve the noise properties of the slave laser with RF linewidth reduction below instrument limits (1 kHz) and integrated timing jitter values below 300 fs. Dual-tone injection allowed slave laser repetition rate control over a 25 MHz range with reduction of all modal optical linewidths to the master source linewidth, demonstrating phase-locking of all slave modes and coherence improvement.

Feasibility of soliton-like DPSK transmission at 40 Gb/s with in-line semiconductor optical amplifiers

We analyze a soliton-like phase-shift keying 40-Gb/s transmission system using cascaded in-line semiconductor optical amplifiers. Numerical optimization of the proposed soliton-like regime is presented. © 2006 IEEE.

RZ-DPSK transmission at 80 Gbit/s channel rate using in-line semiconductor optical amplifiers

We numerically demonstrate the feasibility of return-to-zero differential phase-shift keying transmission at 8.0 Gbit/s channel rate using cascaded in-line semiconductor optical amplifiers.

RZ-DPSK transmission at 80 Gbit/s channel rate using in-line semiconductor optical amplifiers

We numerically demonstrate the feasibility of return-to-zero differential phase-shift keying transmission at 80 Gbit/s channel rate using cascaded in-line semiconductor optical amplifiers.

Phase sensitive signal processing using semiconductor optical amplifiers

This paper examines recent progress in the use of semiconductor optical amplifiers for phase sensitive signal processing functions, a discussion of the world's first multi-wavelength regenerative wavelength conversion using semiconductor optical amplifiers for BPSK signals. OFC/NFOEC Technical Digest © 2013 OSA.

1.2-μm semiconductor disk laser frequency doubled with periodically poled lithium tantalate crystal

In this letter, we demonstrate an optically pumped semiconductor disk laser frequency doubled with a periodically poled lithium tantalate crystal. Crystals with various lengths were tested for intracavity frequency conversion. The semiconductor disk laser exploited GaInNAs-based active region with GaAsAlAs distributed Bragg mirror to produce emission at 1.2- μm wavelength. The frequency doubled power up to 760 mW at the wavelength of 610 nm was achieved with a 2-mm-long crystal. © 2010 IEEE.