Influences of Al doping concentration on structural, electrical and optical properties of Zn0.95Ni0.05O powders

Nanocrystalline Zn0.95 - xNi0.05AlxO (x = 0.01, 0.02, 0.05 and 0.10) diluted magnetic semiconductors have been synthesized by an auto-combustion method. X-ray diffraction measurements indicate that all Al-doped Zn0.95Ni0.05O samples have the pure wurtzite structure. Transmission electron microscope analyses show that the as-synthesized powders are of the size 40 - 45 nm. High-resolution transmission electron microscope, energy dispersive spectrometer and X-ray photoemission spectroscope analyses indicate that Ni2+ and Al3+ uniformly substitute Zn2+ in the wurtzite structure without forming any secondary phases. The Al doping concentration dependences of cell parameters (a and c), resistance and the ratio of green emission to UV emission have the similar trends. (c) 2007 Elsevier B.V. All rights reserved.

Absence of room-temperature ferromagnetism in Al-codoped Zn0.95Co0.05O nanoparticles

Nanocrystalline Zn0.95-xCo0.05AlxO (x=0, 0.01, 0.05) diluted magnetic semiconductors have been synthesized by an auto-combustion method. X-ray diffraction measurements indicated that Al-doped Zn0.95Co0.05O samples had the pure wurtzite structure. X-ray absorption spectroscopy, high-resolution transmission electron microscope, energy dispersive spectrometer and Co 2p core-level photoemission spectroscope analyses indicated that Co2+ substituted for Zn2+ without forming any secondary phases or impurities. Resistance measurements showed that the resistance values of Co and Al codoped samples were still so large in the giga magnitude. Magnetic investigations showed that nanocrystalline Al-doped Zn0.95Co0.05O samples had no indication of room temperature ferromagnetism. (C) 2007 Elsevier B.V. All rights reserved.

A chemically inert Rashba split interface electronic structure of C-60, FeOEP and PTCDA on BiAg2/Ag(111) substrates

The fields of organic electronics and spintronics have the potential to revolutionize the electronics industry. Finding the right materials that can retain their electrical and spin properties when combined is a technological and fundamental challenge. We carry out the study of three archetypal organic molecules in intimate contact with the BiAg2 surface alloy. We show that the BiAg2 alloy is an especially suited substrate due to its inertness as support for molecular films, exhibiting an almost complete absence of substrate-molecular interactions. This is inferred from the persistence of a completely unaltered giant spin-orbit split surface state of the BiAg2 substrate, and from the absence of significant metallic screening of charged molecular levels in the organic layer. Spin-orbit split states in BiAg2 turn out to be far more robust to organic overlayers than previously thought.

Electric field enhancement in guided-mode resonance filters

Electric fields inside guided-mode resonance filters (GMRFs) may be intensified by resonance effects. The electric field enhancement is investigated in two GMRFs: one is resonant at normal incidence, the other at oblique incidence. It is shown that the two GMRFs exhibit different behaviors in their electric enhancement. Differences between the electric field distributions of the two GMRFs arise because coupling between counter-propagating modes occurs in the first case. It is also shown that the order of the electric field of maximum amplitude can be controlled by modulation of the dielectric constant of the grating. (c) 2006 Optical Society of America.

One-dimensional potential for image-potential states on graphene

In the framework of dielectric theory, the static non-local self-energy of an electron near an ultra-thin polarizable layer has been calculated and applied to study binding energies of image-potential states near free-standing graphene. The corresponding series of eigenvalues and eigenfunctions have been obtained by numerically solving the one-dimensional Schrodinger equation. The imagepotential state wave functions accumulate most of their probability outside the slab. We find that the random phase approximation (RPA) for the nonlocal dielectric function yields a superior description for the potential inside the slab, but a simple Fermi-Thomas theory can be used to get a reasonable quasi-analytical approximation to the full RPA result that can be computed very economically. Binding energies of the image-potential states follow a pattern close to the Rydberg series for a perfect metal with the addition of intermediate states due to the added symmetry of the potential. The formalism only requires a minimal set of free parameters: the slab width and the electronic density. The theoretical calculations are compared with experimental results for the work function and image-potential states obtained by two-photon photoemission.

鉴别用变方位角导模共振滤光片的设计

设计了在0°和90°方位角下都具有低旁带的鉴别用导模共振滤光片。利用严格的耦合波理论，分析了这种器件在不同入射角、不同光栅槽深和覆盖不同厚度SiO2层情况下的衍射特性。得到了满足鉴别要求的导模共振滤光片结构。在30°入射角情况下，对于TE模式偏振光，设计的滤光片在0°和90°方位角下都有形状对称的反射光谱、低的旁带、两个位置分开的共振峰和适当的半宽度。

反射型导模共振滤波器设计

导模共振滤波器由于其高峰值反射率,低旁带反射,窄带以及带宽可控等优良特性引起了人们极大的关注,采用亚波长光栅的导模共振效应可以实现传统基于高低折射率介质的多层膜滤波器所无法实现的特殊功能,在弱调制模式下,其共振带宽可以被压缩到零点几纳米,但是由于介质表面和空气层的菲涅耳反射,使得偏离或者远离共振区时的反射率偏高,根据等效介质理论,亚波长光栅在远离共振区可以被看为均匀的薄膜,本文通过对导模共振光栅进行单层、双层以及三层抗反射设计,有效的降低了导模共振光栅的旁带反射率,从而在可见光波段获得了性能优良的共振滤波器.

可见光波段双层浮雕型导模共振滤波器设计与分析

基于傅里叶模式理论分析了双层浮雕型导模共振光栅的共振效应,分别讨论了光栅的槽深、剩余厚度、周期以及填充系数对峰值反射率、带宽、旁带反射率的影响.数据计算表明,欠刻蚀情形的误差宽容度远远优于过刻蚀情形,两者在光栅槽深相对误差小于15%的范围内,都能保证共振峰的衍射效率高于99.5%,在相同的误差范围内,共振峰线宽的相对误差将分别达到7%和60%,因此厚度误差集中反映在对共振线宽的改变上.另外,光栅周期和填充系数的变化将明显改变共振峰中心波长和线宽.

Study on the layer structure of W/C multilayers deposited by magnetron sputtering using x-ray reflectivity

A study on the layer structure of W/C multilayers deposited by magnetron sputtering is reported. In the study, soft x-ray resonant reflectivity and hard x-ray grazing incidence reflectivity of the W/C multilayers were measured. The imperfections at the interface such as interdiffusion and formation of compounds were dealt with by two methods. On analyzing the experimental results, we found that the incorporation of an interlayer was a more suitable method than the traditional statistical method to describe the layer structure of a W/C system we fabricated. The optical constants of each layer at a wavelength of 4.48 nm were also obtained from the analysis. Copyright (C) 2008 John Wiley & Sons, Ltd.

Response of the topological surface state to surface disorder in TlBiSe2

Through a combination of experimental techniques we show that the topmost layer of the topological insulator TlBiSe2 as prepared by cleavage is formed by irregularly shaped Tl islands at cryogenic temperatures and by mobile Tl atoms at room temperature. No trivial surface states are observed in photoemission at low temperatures, which suggests that these islands cannot be regarded as a clear surface termination. The topological surface state is, however, clearly resolved in photoemission experiments. This is interpreted as direct evidence of its topological self-protection and shows the robust nature of the Dirac cone-like surface state. Our results can also help explain the apparent mass acquisition in S-doped TlBiSe2.

Effect of surface plasmon resonance in TiO2/Au thin films on the fluorescence of self-assembled CdTe QDs structure

23rd Congress of the International Comission for Optics (ICO 23)

A vontade das coisas

A vontade das coisas em tempos de biopolítica pesquisa modos de resistência ao poder biopolítico através de uma filosofia orientada para as coisas na dança contemporânea em articulação com o estudo de caso Modo Operativo_and de João Fiadeiro e Fernanda Eugénio. Entender de que forma o campo das artes do corpo, nomeadamente o coreográfico em relação com a filosofia orientada para as coisas se pode revelar mecanismo de reflexão estético-afetivo e se tornam, na sua interdependência, um campo de força potencial no pensamento de resistência às formas de governabilidade neoliberalismo. Assim através de uma reflexão histórica acerca do corpo no campo da biopolítica chega-se à emergência do corpo vibrátil de Suely Rolnik enquanto forma outra de ativação ético-social de todos os coletivos que constituem, compõem mundo. Aborda-se a virada afetiva em relação com a teoria não humana para chegar a uma idéia de ontologia plana entre humanos e não humanos assumindo a importância das redes criadas por ambos os atantes na construção dum plano social baseado no afeto, a idéia de afetar e ser afetado enquanto manifestação de ativismo sensível contemporâneo. Finalmente concluo com a importância do fazer artístico, suas implicações éticas e estéticas, enquanto ferramenta de resistência ao neoliberalismo em articulação com o caso de estudo modo operativo and do coreógrafo João Fiadeiro e da antropóloga Fernanda Eugénio, método este que atua num modo conetivo ao redor de idéias colaborativas e estéticas relacionais, essencial no perspectivar modos de se fazer e se pensar sociedade

Controle a estrutura variável para atenuar modos ressonantes em servomecanismos.

Nesta dissertação é mostrada experimentalmente a existência de modos ressonantes em servomotores de corrente contínua sem núcleo de ferro. Até onde se sabe, não já publicações ou documentos técnicos de fabricantes que relatam esse efeito neste tipo de motor. Foi observado também que a frequência da ressonância é variável e que possivelmente depende da temperatura interna do motor. Conforme e mostrado em simulações técnicas tradicionais para o controle de motores podem não ser eficazes para lidar com esses modos ressonantes. Com o objetivo de amortecer a ressonância e obter o controle de velocidade e posição desses motores, são desenvolvidos controladores por modo deslizante baseados em funções de chaveamento obtidas por observadores de alto ganho. Esse controle e robusto a incertezas paramétricas e perturbações. Com o auxílio de simulações são mostrados os pontos fortes e limitações de cada um dos controladores.

Tetrahedral amorphous carbon-silicon heterojunction band energy offsets

Non-hydrogenated tetrahedral amorphous carbon (ta-C) has shown superior field emission characteristics. The understanding of the emission mechanism has been hindered by the lack of any directly measured data on the band offsets between ta-C and Si. In this paper results from direct in situ X-ray photoemission spectroscopy (XPS) measurements of the band-offset between ta-C and Si are reported. The measurements were carried out using a filtered cathodic vacuum arc (FCVA) deposition system attached directly to an ultra-high vacuum (UHV) XPS chamber via a load lock chamber. Repeated XPS measurements were carried out after monolayer depositions on in situ cleaned Si substrates. The total film thickness for each set of measurements was approximately 5 nm. Analysis of the data from undoped ta-C on n and p Si show the unexpected result that the conduction band barrier between Si and ta-C remains around 1.0 eV, but that the valence band barrier changes from 0.7 to 0.0 eV. The band line up derived from these barriers suggests that the Fermi level in the ta-C lies 0.3 eV above the valence band on both p and n+Si. The heterojunction barriers when ta-C is doped with nitrogen are also presented. The implications of the heterojunction energy barrier heights for field emission from ta-C are discussed.

Dynamical behavior of damped driven coupled single electron simple harmonic oscillators

Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.