997 resultados para QUANTUM COMPLEXITY


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This paper presents an investigation of the mode-locking performance of a two-section external-cavity mode-locked InGaAs quantum-dot laser diode, focusing on repetition rate, pulse duration and pulse energy. The lowest repetition rate to-date of any passively mode-locked semiconductor laser diode is demonstrated (310 MHz) and a restriction on the pulse energy (at 0.4 pJ) for the shortest pulse durations is identified. Fundamental mode-locking from 310 MHz to 1.1 GHz was investigated, and harmonic mode-locking was achieved up to a repetition rate of 4.4 GHz. Fourier transform limited subpicosecond pulse generation was realized through implementation of an intra-cavity glass etalon, and pulse durations from 930fs to 8.3ps were demonstrated for a repetition rate of 1 GHz. For all investigations, mode-locking with the shortest pulse durations yielded constant pulse energies of ∼0.4 pJ, revealing an independence of the pulse energy on all the mode-locking parameters investigated (cavity configuration, driving conditions, pulse duration, repetition rate, and output power). © 2011 IEEE.

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The simulation of complex chemical systems often requires a multi-level description, in which a region of special interest is treated using a computationally expensive quantum mechanical (QM) model while its environment is described by a faster, simpler molecular mechanical (MM) model. Furthermore, studying dynamic effects in solvated systems or bio-molecules requires a variable definition of the two regions, so that atoms or molecules can be dynamically re-assigned between the QM and MM descriptions during the course of the simulation. Such reassignments pose a problem for traditional QM/MM schemes by exacerbating the errors that stem from switching the model at the boundary. Here we show that stable, long adaptive simulations can be carried out using density functional theory with the BLYP exchange-correlation functional for the QM model and a flexible TIP3P force field for the MM model without requiring adjustments of either. Using a primary benchmark system of pure water, we investigate the convergence of the liquid structure with the size of the QM region, and demonstrate that by using a sufficiently large QM region (with radius 6 Å) it is possible to obtain radial and angular distributions that, in the QM region, match the results of fully quantum mechanical calculations with periodic boundary conditions, and, after a smooth transition, also agree with fully MM calculations in the MM region. The key ingredient is the accurate evaluation of forces in the QM subsystem which we achieve by including an extended buffer region in the QM calculations. We also show that our buffered-force QM/MM scheme is transferable by simulating the solvated Cl(-) ion.

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The following discussion is from an Institution of Civil Engineers (ICE) prestige lecture based on the original paper and delivered by the authors at the ICE in London on 24 September 2008.1 The event was chaired by Engineering Sustainability editorial panel chair, Professor Chris Rogers from Birmingham University. It was attended by an audience of 130 people as well as being watched by a similar number over a live web-cast. The web-cast can be accessed from the ICE archive for online viewing at http://scenta. interwise.com/etechb/ OnDemand/TH6509.

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The growth techniques which have enabled the realization of InGaN-based multi-quantum-well (MQW) structures with high internal quantum efficiencies (IQE) on 150mm (6-in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large-area (111) silicon substrates, using AlGaN strain-mediating interlayers to inhibit thermal-induced cracking and wafer-bowing, and using a SiN x interlayer to reduce threading dislocation densities in the active region of the MQW structure. MQWs with high IQE approaching 60% have been demonstrated. Atomic resolution electron microscopy and EELS analysis have been used to study the nature of the important interface between the Si(111) substrate and the AlN nucleation layer. We demonstrate an amorphous SiN x interlayer at the interface about 2nm wide, which does not, however, prevent good epitaxy of the AlN on the Si(111) substrate. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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A case study of an aircraft engine manufacturer is used to analyze the effects of management levers on the lead time and design errors generated in an iteration-intensive concurrent engineering process. The levers considered are amount of design-space exploration iteration, degree of process concurrency, and timing of design reviews. Simulation is used to show how the ideal combination of these levers can vary with changes in design problem complexity, which can increase, for instance, when novel technology is incorporated in a design. Results confirm that it is important to consider multiple iteration-influencing factors and their interdependencies to understand concurrent processes, because the factors can interact with confounding effects. The article also demonstrates a new approach to derive a system dynamics model from a process task network. The new approach could be applied to analyze other concurrent engineering scenarios. © The Author(s) 2012.

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Ultrashort superradiant pulse generation from a 1580 nm AlGaInAs multiple quantum-well (MQW) semiconductor structure has been experimentally demonstrated for the first time. Superradiance is confirmed by analyzing the evolution of the optical temporal waveforms and spectra. Superradiant trends and regimes are studied as a function of driving condition. An optical pulse train is obtained at 1580 nm wavelength, with pulse durations as short as 390 fs and pulse peak powers of 7.2 W.

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While tools have been developed to assist firms' decision making for bringing known products and components into the supply chain, fewer tools are available to guide the acquisition of earlier-stage technologies, which is a riskier proposition due to higher technological and market uncertainties. Through synthesis of literature in technology sourcing, open innovation, alliances, mergers and acquisitions, outsourcing, and technology and knowledge transfer and consultation with industry, this paper identifies critical issues that decision makers should consider before making an early-stage technology acquisition. Sixteen questions emerge to guide decision making, comprising internal, technology, and partner assessments. These questions allow a firm to disentangle the complexity of early-stage technology acquisitions and select the most appropriate targets.