A coupled hydro-mechanical analysis for prediction of hydraulic fracture propagation in saturated porous media using EFG mesh-less method

The details of the Element Free Galerkin (EFG) method are presented with the method being applied to a study on hydraulic fracturing initiation and propagation process in a saturated porous medium using coupled hydro-mechanical numerical modelling. In this EFG method, interpolation (approximation) is based on nodes without using elements and hence an arbitrary discrete fracture path can be modelled.The numerical approach is based upon solving two governing partial differential equations of equilibrium and continuity of pore water simultaneously. Displacement increment and pore water pressure increment are discretized using the same EFG shape functions. An incremental constrained Galerkin weak form is used to create the discrete system of equations and a fully implicit scheme is used for discretization in the time domain. Implementation of essential boundary conditions is based on the penalty method. In order to model discrete fractures, the so-called diffraction method is used.Examples are presented and the results are compared to some closed-form solutions and FEM approximations in order to demonstrate the validity of the developed model and its capabilities. The model is able to take the anisotropy and inhomogeneity of the material into account. The applicability of the model is examined by simulating hydraulic fracture initiation and propagation process from a borehole by injection of fluid. The maximum tensile strength criterion and Mohr-Coulomb shear criterion are used for modelling tensile and shear fracture, respectively. The model successfully simulates the leak-off of fluid from the fracture into the surrounding material. The results indicate the importance of pore fluid pressure in the initiation and propagation pattern of fracture in saturated soils. © 2013 Elsevier Ltd.

Differentiate performance of eight filter media in vertical flow constructed wetland: Removal of organic matter, nitrogen and phosphorus

A comparative study was conducted to reveal the differentiate effects of eight different filter media including gravel, zeolites, anthracite, shale, vermiculite, ceramic filter media, blast furnace steel slag and round ceramsite. The study mainly related to the eight different filter media's removal performances of organic matter, nitrogen and phosphorus in the vertical flow constructed wetland simulated system, which treating wastewater at hydraulic loading rate of 1000-2500 mm/d. The results indicated that the removal effects were closely related to the physical and chemical properties of medium materials. Anthracite-filled system had the highest removal rate for the total organic carbon (TOC), up to 70%, and the removal rates of other systems ranged from 20% to 30%. As for the five-day biochemical oxygen demand (BOD5), anthracite-filled and steel slag-filled systems had the highest removal rates, also up to 70%, as well as other systems all exceeded 50%. At the same time, for the total nitrogen (TN) and NH4(+)-N, the zeolites-filled and ceramic-filled systems had the best performances with the removal rates of more than 70%, the other way round, the removal rates of other systems were only about 20%. The distinguishable effects were also observed in removal performances of total phosphorus (TP) and total dissoluble phosphorus (TDP). The removal rates of TP and TDP in steel slag-filled systems were more than 90%, a much higher value, followed by that of the anthracite-filled system, more than 60%, but those of other systems being the less. Our study provided a potential mechanism to optimize the filter media design for the vertical flow constructed wetlands.

Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media

In this review, the potential of mode-locked lasers based on advanced quantum-dot ( QD) active media to generate short optical pulses is analysed. A comprehensive review of experimental and theoretical work on related aspects is provided, including monolithic-cavity mode-locked QD lasers and external-cavity mode-locked QD lasers, as well as mode-locked solid-state and fibre lasers based on QD semiconductor saturable absorber mirrors. Performance comparisons are made for state-of-the-art experiments. Various methods for improving important characteristics of mode-locked pulses such as pulse duration, repetition rate, pulse power, and timing jitter through optimization of device design parameters or mode-locking methods are addressed. In addition, gain switching and self-pulsation of QD lasers are also briefly reviewed, concluding with the summary and prospects.

Raman study of low-temperature-grown Al0.29Ga0.71As/GaAs photorefractive materials

We report on the observation of resonant Raman scattering in low-temperature-grown AlGaAs/GaAs structure. Two kinds of excitation lights, 632.8 and 488 nm laser lines, were used to detect scattering signal from different regions based on different penetration depths. Under the outgoing resonant condition, up to fourth-order resonant Raman peaks were observed in the low-temperature-grown AlGaAs alloy, owing to a broad exciton luminescence in low-temperature-grown AlGaAs alloy induced by intrinsic defects and As cluster after post-annealing. These resonant peaks were assigned according to their fundamental modes. Among the resonant peaks, besides the overtones of the GaAs- or AlAs-like mode, there exist combination bands of these two kinds of modes. In addition, a weak scattering peak similar to the bulk GaAs longitudinal optical mode was observed in low-temperature Raman experiments. We consider the weak signal correlated with GaAs clusters appearing in AlGaAs alloys. The accumulation of GaAs in AlGaAs alloys was enhanced after annealing at high temperatures. A detailed study of the dependence of vibration modes on measuring temperature and post-annealing conditions is given also. In light of our experiments, it is suggested that a Raman scattering experiment is a sensitive microscopic probe of local disorder and, especially performed at low temperature, is a superior method in detecting and analyzing the weak interaction between phonons and electrons.

Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers

At a medium substrate temperature of 400 degrees C and a lower As flux, we have grown an ultrafast AlGaAs/GaAs photorefractive multiple quantum well (MQW) structure by molecular beam epitaxy. The as-grown sample exhibits strong photorefractive effect under the transverse Frantz-Keldysh geometry. A peak electroabsorption of 2100 cm(-1) is measured in the as-grown sample in an 11 kV/cm dc electric field, and the peak photorefractive diffraction efficiency can be 1.2%. After postgrowth annealing, the photorefractive effect becomes weak and disappears in samples annealed above 700 degrees C. Using optical transient current spectroscopy, deep levels are measured in these samples. It is found that deep levels are stable against annealing until 700 degrees C. Using a pump-probe technique, carrier lifetimes are measured at room temperature. We find that the as-grown sample has a lifetime of 20 ps, while the 700 degrees C annealed sample has a lifetime of more than 200 ps. The ultrafast lifetime in the as-grown sample is caused by point defects, not by As clusters. Our result show that AlGaAs/GaAs MQW structure grown around 400 degrees C has better performance of the photorefractive effect. (C) 1999 American Institute of Physics. [S0003-6951(99)04036-X].

One-dimensional modulation instability of broad optical beams in biased photorefractive-photovoltaic crystals under steady-state conditions

We present a comprehensive study of the one-dimensional modulation instability of broad optical beams in biased photo refractive-photovoltaic crystals under steady-state conditions. We obtain the one-dimensional modulation instability growth rate by globally treating the space-charge field and by considering distinction between values of Eo in nonlocal effects and local effects in the space-charge field, where Eo is the field constant correlated with terms in the space-charge field, which depends on the external bias field, the bulk photovoltaic effect, and the ratio of the optical beam's intensity to that of the dark irradiance. The one-dimensional modulation instability growth rate in local effects can be determined from that in nonlocal effects. When the bulk photovoltaic effect is neglectable, irrespective of distinction between values of Eo in nonlocal effects and local effects in the space-charge field, the one-dimensional modulation instability growth rates in nonlocal effects and local effects are those of broad optical beams studied previously in biased photorefractive-nonphotovoltaic crystals. When the external bias field is absent, the one-dimensional modulation instability growth rates in nonlocal effects and local effects predict those of broad optical beams in open- and closed-circuit photorefractive-photovoltaic crystals. (c) 2004 Elsevier B.V. All rights reserved.

Steady-state bright-dark vector spatial solitons in biased photorefractive-photovoltaic crystals

We show that bright-dark vector solitons are possible in biased photorefractive-photovoltaic crystals under steady-state conditions, which result from both the bulk photovoltaic effect and the spatially nonuniform screening of the external bias field. The analytical solutions of these vector solitons can be obtained in the case of \sigma\ much less than 1, where sigma is the parameter controlling the intensities of the two optical beams. In the limit of -1 < sigma much less than 1, these vector solitons can also be determined by use of simple numerical integration procedures. When the bulk photovoltaic effect is neglectable, these vector solitons are bright-dark vector screening solitons studied previously in the \sigma\ much less than 1 regime, and predict bright-dark vector screening solitons in the -1 < sigma less than or equal to 1 regime. When the external bias field is absent, these vector solitons predict bright-dark vector photovoltaic solitons in closed and open circuits. (C) 2002 Elsevier Science B.V. All rights reserved.

Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals

We investigate the modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals by globally treating the space-charge field. The modulation instability growth rate is obtained, which depends on the external bias field, on the bulk photovoltaic effect, and on the ratio of the optical beam's intensity to that of the dark irradiance. Our analysis indicates that this modulation instability growth rate is identical to the modulation instability growth rate studied previously in biased photorefractive-nonphotovoltaic crystals when the bulk photovoltaic effect is negligible for shorted circuits, and predicts the modulation instability growth rate in open- and closed-circuit photorefractive-photovoltaic crystals when the external bias field is absent.