Solar pond technology

Solar pond technology has made substantial progress in the last fifteen years. This paper reviews the basic principles of solar ponds and the problems encountered in their operation and maintenance. The factors which influence the technical and economic viability of solar ponds for thermal applications and power generation have been discussed.

Nano structured carbon nitrides prepared by chemical vapour deposition

Nanostructured carbon nitride films were prepared by pyrolysis assisted chemical vapour deposition(CVD). A two zone furnace with a temperature profile having a uniform temperature over a length of 20 cm length has been designed and developed. The precursor Azabenzimidazole was taken in a quartz tube and evaporated at 400 degrees C. The dense vapours enter the pyrolysis zone kept at a desired temperature and deposit on the quartz substrates. The FTIR spectrum of the prepared samples shows peaks at 1272 cm(-1) (C-N stretching) and 1600 cm(-1) (C=N) confirms the bonding of nitrogen with carbon. Raman D and G peaks, are observed at 1360 cm(-1) and 1576 cm(-1) respectively. XPS core level spectra of C 1s and N 1s show the formation of pi bonding between carbon and nitrogen atoms. The size of the nano crystals estimated from the SEM images and XRD is similar to 100 nm. In some regions of the sample a maximum of 57 atom % of nitrogen has been observed.

Self-assembled composite nano-materials exploiting a thermo reversible n-acene fibrillar scaffold and organic-capped ZnO nanoparticles

An organic-inorganic composite material is obtained by self-assembly of 2,3-didecyloxy-anthracene (DDOA), an organogelator of butanol, and organic-capped ZnO nanoparticles (NPs). The ligand 3, 2,3-di(6-oxy-n-hexanoic acid)-anthracene, designed to cap ZnO and interact with the DDOA nanofibers by structural similarity, improves the dispersion of the NPs into the organogel. The composite material displays mechanical properties similar to those of the pristine DDOA organogel, but gelates at a lower critical concentration and emits significantly less, even in the presence of very small amounts of ZnO NPs. The ligand 3 could also act as a relay to promote the photo-induced quenching process.

Enhanced ionic conductivity in nano-composite solid polymer electrolyte: (PEG) (x) LiBr: y(SiO2)

In this paper, we report an enhancement in ionic conductivity in a new nano-composite solid polymer electrolyte namely, (PEG) (x) LiBr: y(SiO2). The samples were prepared, characterized, and investigated by XRD, IR, NMR, and impedance spectroscopy. Conductivity as a function of salt concentration shows a double peak. Five weight percent addition of silica nanoparticles increases the ionic conductivity by two orders of magnitude. Conductivity exhibits an Arrhenius type dependence on temperature. IR study has shown that the existence of nanoparticles in the vicinity of terminal OaEuro center dot H group results in a shift in IR absorption frequency and increase in amplitude of vibration of the terminal OaEuro center dot H group. This might lead to an enhancement in conductivity due to increased segmental motion of the polymer. Li-7 NMR spectroscopic studies also seem to support this. Thus addition of nanoparticle inert fillers still seems to be a promising technique to enhance the ionic conductivity in solid polymer electrolytes.

Electro-magnetically Actuated Minute Polymer Pump Fabricated using Packaging Technology

Design, fabrication and preliminary testing of a flat pump with millimetre thickness are described in this paper. The pump is entirely made of polymer materials barring the magnet and copper coils used for electromagnetic actuation. The fabrication is carried out using widely available microelectronic packaging machinery and techniques. Therefore, the fabrication of the pump is straightforward and inexpensive. Two types of prototypes are designed and built. One consists of copper coils that are etched on an epoxy plate and the other has wound insulated wire of 90 mu m diameter to serve as a coil. The overall size of the first pump is 25 mm x 25 mm x 3.6 mm including the 3.1 mm-thick NdFeB magnet of diameter 12 mm. It consists of a pump chamber of 20 mm x 20 mm x 0.8 mm with copper coils etched from a copper-clad epoxy plate using dry-film lithography and milled using a CNC milling machine, two passive valves and the pump-diaphragm made of Kapton film of 0.089 mm thickness. The second pump has an overall size of 35 mm x 35 mm x 4.4 mm including the magnet and the windings. A breadboard circuit and DC power supply are used to test the pump by applying an alternating square-wave voltage pulse. A water slug in a tube attached to the inlet is used to observe and measure the air-flow induced by the pump against atmospheric pressure. The maximum flow rate was found to be 15 ml/min for a voltage of 2.5 V and a current of 19 mA at 68 Hz.

Indian Nanoelectronics Users Program An Outreach Vehicle to Expedite Nanoelectronics Research in India

The worldwide research in nanoelectronics is motivated by the fact that scaling of MOSFETs by conventional top down approach will not continue for ever due to fundamental limits imposed by physics even if it is delayed for some more years. The research community in this domain has largely become multidisciplinary trying to discover novel transistor structures built with novel materials so that semiconductor industry can continue to follow its projected roadmap. However, setting up and running a nanoelectronics facility for research is hugely expensive. Therefore it is a common model to setup a central networked facility that can be shared with large number of users across the research community. The Centres for Excellence in Nanoelectronics (CEN) at Indian Institute of Science, Bangalore (IISc) and Indian Institute of Technology, Bombay (IITB) are such central networked facilities setup with funding of about USD 20 million from the Department of Information Technology (DIT), Ministry of Communications and Information Technology (MCIT), Government of India, in 2005. Indian Nanoelectronics Users Program (INUP) is a missionary program not only to spread awareness and provide training in nanoelectronics but also to provide easy access to the latest facilities at CEN in IISc and at IITB for the wider nanoelectronics research community in India. This program, also funded by MCIT, aims to train researchers by conducting workshops, hands-on training programs, and providing access to CEN facilities. This is a unique program aiming to expedite nanoelectronics research in the country, as the funding for projects required for projects proposed by researchers from around India has prior financial approval from the government and requires only technical approval by the IISc/ IITB team. This paper discusses the objectives of INUP, gives brief descriptions of CEN facilities, the training programs conducted by INUP and list various research activities currently under way in the program.

Centers of Excellence in Nanoelectronics in India

Nanoelectronics is considered an emerging area all over the world and is widely anticipated to hold the key to the future electronic innovations. Realizing its importance, the Government of India has set up two Centers of Excellence in Nanoelectronics (CEN) one at Indian Institute of Science (IISc), Bangalore and the other at Indian Institute of Technology Bombay (IITB) in 2006. The first phase of this program is going to be over in December 2010 and the second phase is going to continue. This paper discusses the objectives of the project, activities, research areas, students training, various research activities, Incubation and Entrepreneurship activity, and interaction with Academic institutions / industries both at National and International level.

Synthesis of Nano Structured Carbon Nitride by Pyrolysis Assisted Chemical Vapour Deposition

Nanostructured carbon nitride films were prepared by pyrolysis assisted chemical vapour deposition. A two zone furnace with a uniform temperature over a length of 20 cm in both the zones was built. The precursor Azabenzimidazole (C6H5N3) taken in a quartz tube was evaporated at zone A and pyrolysed at zone B at a temperature of 800 degrees C. The FTIR spectrum of the prepared sample shows peaks at 1272 cm(-1) and 1591 cm(-1) corresponding to C-N stretching and C=N respectively, which confirms the bonding of nitrogen with carbon. Raman D and G peaks are observed at 1357 cm(-1) and 1560 cm(-1) respectively. X-ray photoelectron spectroscopy (XPS) shows the formation of pi bonding between carbon and nitrogen atoms. These observations along with XRD analysis show the formation of crystallites of alpha-C3N4 and beta-C3N4 in the background of graphitic C3N4. The size of the nanocrystals estimated from the SEM images is similar to 100 nm.

Integrated optics � technology and applications

The emergence of optoelectronics and photonics as viable alternatives to electronics in many key areas of engineering relevance is indeed significant. This paper presents a tutorial review of integrated optics � a technologically important development in photonics. Materials, processes, device technology and applications are highlighted.

Design and realization of high-performance wave-pipelined 8×8 b multiplier in CMOS technology

Wave pipelining is a design technique for increasing the throughput of a digital circuit or system without introducing pipelining registers between adjacent combinational logic blocks in the circuit/system. However, this requires balancing of the delays along all the paths from the input to the output which comes the way of its implementation. Static CMOS is inherently susceptible to delay variation with input data, and hence, receives a low priority for wave pipelined digital design. On the other hand, ECL and CML, which are amenable to wave pipelining, lack the compactness and low power attributes of CMOS. In this paper we attempt to exploit wave pipelining in CMOS technology. We use a single generic building block in Normal Process Complementary Pass Transistor Logic (NPCPL), modeled after CPL, to achieve equal delay along all the propagation paths in the logic structure. An 8×8 b multiplier is designed using this logic in a 0.8 ?m technology. The carry-save multiplier architecture is modified suitably to support wave pipelining, viz., the logic depth of all the paths are made identical. The 1 mm×0.6 mm multiplier core supports a throughput of 400 MHz and dissipates a total power of 0.6 W. We develop simple enhancements to the NPCPL building blocks that allow the multiplier to sustain throughputs in excess of 600 MHz. The methodology can be extended to introduce wave pipelining in other circuits as well

The physics and technology of gallium antimonide: An emerging optoelectronic material

Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 mu m. The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication. (C) 1997 American Institute of Physics.

Combinatorial logic synthesis using technology directed decomposition

The aim of logic synthesis is to produce circuits which satisfy the given boolean function while meeting timing constraints and requiring the minimum silicon area. Logic synthesis involves two steps namely logic decomposition and technology mapping. Existing methods treat the two as separate operation. The traditional approach is to minimize the number of literals without considering the target technology during the decomposition phase. The decomposed expressions are then mapped on to the target technology to optimize the area, Timing optimization is carried out subsequently, A new approach which treats logic decomposition and technology maping as a single operation is presented. The logic decomposition is based on the parameters of the target technology. The area and timing optimization is carried out during logic decomposition phase itself. Results using MCNC circuits are presented to show that this method produces circuits which are 38% faster while requiring 14% increase in area.

Electrical treeing in polyethylene: effect of nano fillers on tree inception and growth

Treeing in polyethylene based nanocomposite samples as well as unfilled polyethylene samples were studied using 50Hz ac voltage. The tree inception voltage was observed for different types of samples. The tree initiation time as well as the tree growth patterns at a fixed ac voltage have also been studied. The results show that there is an improvement in tree inception voltage with nano filler loading in polyethylene. Different tree growth patterns for both the unfilled polyethylene and the polyethylene nanocomposites have been observed. A slower tree growth was observed in polyethylene nanocomposites. The partial discharge characteristics of unfilled and nano filled polyethylene samples during the electrical tree growth period was also studied. Decrease in PD magnitude as well as in the number of pd pulses with electrical tree growth duration in polyethylene nanocomposites has also been observed. The possible reasons for the improvement in electrical tree growth and PD resistance with the addition of nano fillers are discussed.

Morphology and thermal characteristics of nano-sized Pb-Sn inclusions in Al

Nanoembedded aluminum alloys with bimetallic dispersoids of Sn and Pb of compositions Sn-82-Pb-18,Pb- Sn-64-Pb-36, and Sn-54-Pb-46 were synthesized by rapid solidification. The two phases, face-centered-cubic Pb and tetragonal Sn solid-solution, coexist in all the particles. The crystallographic relation between the two phases and the matrix depends upon the solidification pathways adopted by the particles. For Al-(Sn-82-Pb-18), we report a new orientation relation given by [011]Al//[010]Sn and (011)Al//(101)Sn. Pb exhibits a cube-on-cube orientation with Al in few particles, while in others no orientation relationship could be observed. In contrast, Pb in Sn-64-Pb-36 and Sn-54-Pb-46 particles always exhibits cube-on-cube orientation with the matrix. Sn does not show any orientation relationship with Al or Pb in these cases. Differential scanning calorimetry studies revealed melting at eutectic temperature for all compositions, although solidification pathways are different. Attempts were made to correlate these with the melting and heterogeneous nucleation. characteristics.