Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE

Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 - 2 0) orientation of the GaN epilayers were confirmed by high resolution X-ray diffraction (HRXRD) study. The X-ray rocking curve (XRC) full width at half maximum of the (1 1 - 2 0) reflection shows in-plane anisotropic behavior and found to decrease with increase in growth temperature. The atomic force micrograph (AFM) shows island-like growth for the film grown at a lower temperature. Surface roughness has been decreased with increase in growth temperature. Room temperature photoluminescence shows near band edge emission at 3.434-3.442 eV. The film grown at 800 degrees C shows emission at 2.2 eV, which is attributed to yellow luminescence along with near band edge emission. (C) 2010 Elsevier B.V. All rights reserved.

Mobile Base Stations Placement and Energy Aware Routing in Wireless Sensor Networks

Increasing network lifetime is important in wireless sensor/ad-hoc networks. In this paper, we are concerned with algorithms to increase network lifetime and amount of data delivered during the lifetime by deploying multiple mobile base stations in the sensor network field. Specifically, we allow multiple mobile base stations to be deployed along the periphery of the sensor network field and develop algorithms to dynamically choose the locations of these base stations so as to improve network lifetime. We propose energy efficient low-complexity algorithms to determine the locations of the base stations; they include i) Top-K-max algorithm, ii) maximizing the minimum residual energy (Max-Min-RE) algorithm, and iii) minimizing the residual energy difference (MinDiff-RE) algorithm. We show that the proposed base stations placement algorithms provide increased network lifetimes and amount of data delivered during the network lifetime compared to single base station scenario as well as multiple static base stations scenario, and close to those obtained by solving an integer linear program (ILP) to determine the locations of the mobile base stations. We also investigate the lifetime gain when an energy aware routing protocol is employed along with multiple base stations.

Lanthanide Luminescent Coordination Polymer Constructed from Unsymmetrical Dinuclear Building Blocks Based on 4-((1H-Benzod]imidazol-1-yl)methyl)benzoic Acid

Lanthanide coordination polymers of the general formula Ln(2)(L)(5)(NO3)(H2O)(4)](n) (Ln = Eu (1), Tb (2), Gd (3)) supported by a novel aromatic carboxylate ligand 4-((1H-benzod]imidazol-1-yl)methyl)benzoic acid (HL) have been synthesized, characterized, and their photoluminescence behavior is examined. The powder X-ray diffraction patterns of complexes 1-3 showed that 1-3 are isostructural; thus, 1 has been chosen as an example to discuss in detail about the molecular structure by single-crystal X-ray diffraction. Complex 1 is a one-dimensional (1D) helical chain-like coordination polymer consisting of unique unsymmetrical dinuclear lanthanide building blocks. The 1D chains are further linked by the significant intermolecular hydrogen-bonding interactions to form a two-dimensional supramolecular network. The Tb3+ complex exhibits bright green luminescence efficiency in the solid state with a quantum yield of 15%. On the other hand, poor luminescence efficiency has been noted for Eu3+-benzoate complex.

Effect of Li+-ion on enhancement of photoluminescence in Gd2O3:Eu3+ nanophosphors prepared by combustion technique

Gd2O3:Eu3+ (4 mol%) nanophosphor co-doped with Li+ ions have been synthesized by low-temperature solution combustion technique in a short time. Powder X-ray diffractometer (PXRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR), UV-VIS and photoluminescence (PL) techniques have been employed to characterize the synthesized nanoparticles. It is found that the lattice of Gd2O3:Eu3+ phosphor transforms from monoclinic to cubic as the Li+-ions are doped. Upon 254 nm excitation, the phosphor showed characteristic luminescence D-5(0) -> F-7(J) (J= 0-4) of the Eu3+ ions. The electronic transition located at 626 nm (D-5(0) -> F-7(2)) of Eu3+ ions was stronger than the magnetic dipole transition located at 595 nm (D-5(0) -> F-7(1)). Furthermore, the effects of the Li+ co-doping as well as calcinations temperature on the PL properties have been studied. The results show that incorporation of Li+ ions in Gd2O3:Eu3+ lattice could induce a remarkable improvement of their PL intensity. The emission intensity was observed to be enhanced four times than that of with out Li+-doped Gd2O3:Eu3+. (C) 2010 Elsevier B.V. All rights reserved,

Origin of visible photoluminescence from porous silicon as studied by Raman spectroscopy

In this paper we discuss the different models proposed to explain the visible luminescence in porous silicon (PS). We review our recent photoluminescence and Raman studies on PS as a function of different preparation conditions and isochronal thermal annealing. Our results can be explained by a hybrid model which incorporates both nanostructures for quantum confinement and silicon complexes (such as SiHx, and siloxene) and defects at Si/SiO2, interfaces as luminescent centres.

Baculovirus mediated high-level expression of luciferase in silkworm cells and larvae

Bombyx mori nuclear polyhedrosis virus (BmNPV)-based baculovirus expression system exploits silkworm larvae as an economical alternative to large-scale cell cultures for production of biomolecules. To generate recombinant BmNPV at high efficiency, we have achieved high efficiency transfection of B. mori cells, BmN, through lipofection. Optimal conditions for lipofection were standardized by quantification of the transient expression level of firefly luciferase (luc) reporter gene under control of an immediate early gene promoter of BmNPV Lipofection was 50-fold and 100-fold more efficient than the calcium phosphate method for transfecting BmN and Sf9 cells, respectively. Lipofection enabled us to generate a recombinant BmNPV (vBmluc), harboring luc under control of the strong polyhedrin promoter On infection with vBmluc, luciferase was expressed at very high levels, 170 mu g/10(6) BmN cells or 13 mg/larva. Expression of luciferase in vBmluc-infected larvae was visualized by luminescence emission instantaneously following luciferin injection generating ''glowing silkworms''.

Photophysical properties of the fullerenes, C60 and C70

Photophysical properties of the singlet and triplet states of the fullerenes, C60 and C70, have been investigated in toluene, benzene, hexane and ethanol solutions by pico- and nano-second laser flash photolysis techniques. Lifetimes, extinction coefficients, quantum efficiencies of the formation of the excited states and such properties have been determined. True triplet�triplet absorption spectra of C60 and C70 are reported. C60, unlike C70, is found to undergo photoionization in ethanol solution giving solvated electrons.

Magnetic and spin evolution of pulsars

We explore the consequences of the model of spin-down-induced flux expulsion for the magnetic field evolution in solitary as well as in binary neutron stars. The spin evolution of pulsars, allowing for their field evolution according to this model, is shown to be consistent with the existing observational constraints in both low- and high-mass X-ray binary systems. The contribution from pulsars recycled in massive binaries to the observed excess in the number of low-field (10(11)-10(12) G) solitary pulsars is argued to be negligible in comparison with that of normal pulsars undergoing a 'restricted' field decay predicted by the adopted field decay model. Magnetic fields of neutron stars born in close binaries with intermediate- or high-mass main-sequence companions are predicted to decay down to values as low as similar to 10(6) G, which would leave them unobservable as pulsars during most of their lifetimes. The post-recycling evolution of some of these systems can, however, account for the observed binary pulsars having neutron star or massive white dwarf companions. Pulsars recycled in the disc population low-mass binaries are expected to have residual fields greater than or similar to 10(8) G, while for those processed in globular clusters larger residual fields are predicted because of the lower field strength of the neutron star at the epoch of binary formation. A value of tau similar to 1-2 x 10(7) yr for the mean value of the Ohmic decay time-scale in the crusts of neutron stars is suggested, based on the consistency of the model predictions with the observed distribution of periods and magnetic fields in the single and binary pulsars.

Temperature-dependent photoluminescence of GaN grown on beta-Si3N4/Si (111) by plasma-assisted MBE

Photoluminescence (PL) of high quality GaN epitaxial layer grown on beta-Si3N4/Si (1 1 1) substrate using nitridation-annealing-nitridation method by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated in the range of 5-300 K. Crystallinity of GaN epilayers was evaluated by high resolution X-ray diffraction (HRXRD) and surface morphology by Atomic Force Microscopy (AFM) and high resolution scanning electron microscopy (HRSEM). The temperature-dependent photoluminescence spectra showed an anomalous behaviour with an `S-like' shape of free exciton (FX) emission peaks. Distant shallow donor-acceptor pair (DAP) line peak at approximately 3.285 eV was also observed at 5 K, followed by LO replica sidebands separated by 91 meV. The activation energy of the free exciton for GaN epilayers was also evaluated to be similar to 27.8 +/- 0.7 meV from the temperature-dependent PL studies. Low carrier concentrations were observed similar to 4.5 +/- 2 x 10(17) Cm-3 by measurements and it indicates the silicon nitride layer, which not only acts as a growth buffer layer, but also effectively prevents Si diffusion from the substrate to GaN epilayers. The absence of yellow band emission at around 2.2 eV signifies the high quality of film. The tensile stress in GaN film calculated by the thermal stress model agrees very well with that derived from Raman spectroscopy. (C) 2010 Elsevier B.V. All rights reserved.

Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment

Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clearly show passivation of defects on the surface as well as in the bulk region. The passivation of various recombination centers in the bulk is attributed to the formation of hydrogen-impurity complexes by diffusion of hydrogen ions from the plasma a-Si:H acts as a protective cap layer and prevents surface degradation which is usually encountered by bare exposure to hydrogen plasma. An enhancement in luminescence intensity up to 20 times is seen due to the passivation of nonradiative recombination centers. The passivation efficiency is found to improve with an increase in a-Si:H deposition temperature. The relative passivation efficiency of donors and acceptors by hydrogen in undoped and Te-compensated p-GaSb has been evaluated by CL and by the temperature dependence of photoluminescence intensities. Most notably, effective passivation of minority dopants in tellurium compensated p-GaSb is evidenced for the first time. (C) 1996 American Institute of Physics.

Effect of ruthenium passivation on the optical and electrical properties of gallium antimonide

Improvements in optical and electrical properties were observed after ruthenium passivation of gallium antimonide surfaces. On passivation, luminescence efficiency increased up to 50 times and surface state density reduced by two orders of magnitude. Also, the reverse leakage current was found to decrease by a factor of 30�40 times. Increase in carrier mobility as a result of grain boundary passivation in polycrystalline GaSb was observed. © 1995 American Institute of Physics.

Time-Resolved Photoluminescence and Microwave Conductivity at Semiconductor Electrodes: Depletion Layer Effects

Analytical expressions which include depletion layer effects on low-injection carrier relaxation are being presented for the first time here. Starting from the continuity equation for the minority carriers, we derive expressions for the output signal pertinent to time-resolved microwave and luminescence experiments. These are valid for the time domain that usually overlaps with the time scales of surface processes, such as charge transfer and trapping. Apart from the usual pulse form of illumination, theoretical expressions pertaining to other forms of illumination such as switch-on and switch-off transient modes, a periodic mode, and a steady state and their various inter-relationships are derived here. The expressions obtained are seen to be generalizations of existing flat-band low-injection results in the Limit of early or initial band bendings. The importance of the depletion layer as an experimental parameter is clearly seen in the limit of larger band bendings wherein it is shown, unlike the flat-band case, to exhibit pure exponential forms of carrier relaxation. Our results are consistent with the main conclusions of the numerical and experimental work published recently. Furthermore, this work provides the actual functional relationships between the applied potential and observed carrier decay. This should enable one to extract the surface kinetic parameters, after deciding on the dominant mode of carrier relaxation at the interface, whether charge transfer or trapping, by studying the potential dependence of the fate of relaxation.

Photoluminescence studies on gray tracked KTiOPO4 single crystals

The photochromic, electrochromic and x-ray irradiation damages (commonly called the gray tracks) produced in KTiOPO4 single crystals have been studied using photoluminescence (PL) spectroscopy. Gray tracks were produced in this material by exposure to high laser powers (similar to MW/cm(2)), application of electric fields (similar to kV), and exposure to x rays (30 kV). The PL spectra recorded for such gray tracked samples at 4.2 K, exhibited a luminescence band in the 1-1.8 eV range with a peak at 1.41 eV. Temperature and excitation intensity dependence of PL peaks were carried out to probe the exact nature of the broad emission band in the gray tracked samples. The observed photoluminescence is attributed to transitions in the Ti3+ levels, created on irradiation. The microscopic effects produced in the crystal by electric field, optical field, and x rays are similar, as can be concluded from the similarity of PL spectra as well as their intensity and temperature dependences. (C) 1999 American Institute of Physics. [S0021-8979(99)04512-0].

Pulsed laser deposited ZnO/ZnO:Li multilayer for blue light emitting diodes

Thin films of ZnO, Li doped ZnO (ZLO) and multilayer of ZnO and ZLO (ZnO/ZLO) were grown on silicon and corning glass substrates by pulsed laser deposition technique. Single phase formation and the crystalline qualities of the films were analyzed by X-ray diffraction and Li composition in the film was investigated to be 15 wt% by X-ray photoelectron spectroscopy. Raman spectrum reveals the hexagonal wurtzite structure of ZnO, ZLO and ZnO/ZLO multilayer and confirms the single phase formation. Films grown on corning glass shows more than 80% transmittance in the visible region and the optical band gaps were calculated to be 3.245, 3.26 and 3.22 eV for ZnO, ZLO and ZnO/ZLO, respectively. An efficient blue emission was observed in all films which were grown on silicon (1 0 0) substrate by photoluminescence (PL). PL measurements at different temperatures reveal that the PL emission intensity of ZnO/ZLO multilayer was weakly dependent on temperature as compared to the single layers of ZnO and ZLO and the wavelength of emission was independent of temperature. Our results indicate that ZnO/ZLO multilayer can be used for the fabrication of blue light emitting diodes. (C) 2011 Elsevier B.V. All rights reserved.

Optimization of off-oriented Ge substrates for MOVPE-grown GaAs solar cells

GaAs/Ge heterostructures having abrupt interfaces were grown on 2degrees, 6degrees, and 9degrees off-cut Ge substrates and investigated by cross-sectional high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy, photoluminescence spectroscopy and electrochemical capacitance voltage (ECV) profiler. The GaAs films were grown on off-oriented Ge substrates with growth temperature in the range of 600-700degreesC, growth rate of 3-12 mum/hr and a V/III ratio of 29-88. The lattice indexing of HRTEM exhibits an excellent lattice line matching between GaAs and Ge substrate. The PL spectra from GaAs layer on 6degrees off-cut Ge substrate shows the higher excitonic peak compared with 2degrees and 9degrees off-cut Ge substrates. In addition, the luminescence intensity from the GaAs solar cell grown on 6degrees off-cut is higher than on 9degrees off-cut Ge substrates and signifies the potential use of 6degrees off-cut Ge substrate in the GaAs solar cells industry. The ECV profiling shows an abrupt film/substrate interface as well as between various layers of the solar cell structures.