Shock propagation and MPT noise from a transonic rotor in non-uniform flow

One of the major challenges in hig4h-speed fan stages used in compact, embedded propulsion systems is inlet distortion noise. A body-force-based approach for the prediction of multiple-pure-tone (MPT) noise was previously introduced and validated. In this paper, it is employed with the objective of quantifying the effects of non-uniform flow on the generation and propagation of MPT noise. First-of-their-kind back-to-back coupled aero-acoustic computations were carried out using the new approach for conventional and serpentine inlets. Both inlets delivered flow to the same NASA/GE R4 fan rotor at equal corrected mass flow rates. Although the source strength at the fan is increased by 45 dB in sound power level due to the non-uniform inflow, farfield noise for the serpentine inlet duct is increased on average by only 3.1 dBA overall sound pressure level in the forward arc. This is due to the redistribution of acoustic energy to frequencies below 11 times the shaft frequency and the apparent cut-off of tones at higher frequencies including blade-passing tones. The circumferential extent of the inlet swirl distortion at the fan was found to be 2 blade pitches, or 1/11th of the circumference, suggesting a relationship between the circumferential extent of the inlet distortion and the apparent cut-off frequency perceived in the far field. A first-principles-based model of the generation of shock waves from a transonic rotor in non-uniform flow showed that the effects of non-uniform flow on acoustic wave propagation, which cannot be captured by the simplified model, are more dominant than those of inlet flow distortion on source noise. It demonstrated that non-linear, coupled aerodynamic and aeroacoustic computations, such as those presented in this paper, are necessary to assess the propagation through non-uniform mean flow. A parametric study of serpentine inlet designs is underway to quantify these propagation effects. Copyright © 2011 by ASME.

Evaluation and modeling of lanthanum diffusion in TiN/La 2O 3/HfSiON/SiO 2/Si high-k stacks

In this study, TiN/La 2O 3/HfSiON/SiO 2/Si gate stacks with thick high-k (HK) and thick pedestal oxide were used. Samples were annealed at different temperatures and times in order to characterize in detail the interaction mechanisms between La and the gate stack layers. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements performed on these samples show a time diffusion saturation of La in the high-k insulator, indicating an La front immobilization due to LaSiO formation at the high-k/interfacial layer. Based on the SIMS data, a technology computer aided design (TCAD) diffusion model including La time diffusion saturation effect was developed. © 2012 American Institute of Physics.

Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold

The three-dimensional spatial distribution of Al in the high-k metal gates of metal-oxide-semiconductor field-effect-transistors is measured by atom probe tomography. Chemical distribution is correlated with the transistor voltage threshold (VTH) shift generated by the introduction of a metallic Al layer in the metal gate. After a 1050 °C annealing, it is shown that a 2-Å thick Al layer completely diffuses into oxide layers, while a positive VTH shift is measured. On the contrary, for thicker Al layers, Al precipitation in the metal gate stack is observed and the VTH shift becomes negative. © 2012 American Institute of Physics.

DC and AC Shielding properties of bulk high-tc

We have studied numerically and experimentally the magnetic flux penetration in high-Tc superconducting tube subjected to a uniform magnetic field parallel to its long axis. This study is carried in view of designing low-frequency magnetic shields by exploiting the diamagnetic properties of high-Tc superconducting ceramics. We have measured the field attenuation for applied magnetic fields in the frequency range 5 mHz-0.1 Hz by Hall probe measurements and at audio frequencies using a sensing coil. A simple 1D analysis using the Kim critical state model was found to be able to reproduce the experimental data satisfactorily. We have also determined the phase shift between the internal and the applied field both experimentally and numerically. Finally, we have studied the sweep rate dependence of the magnetic shielding properties, using data recorded either at several constant sweep rates dB /dt or at several AC fields of various amplitudes and frequencies. Both methods agree with each other and lead to a n-value of the E ∼ Jn law equal to ∼40 at 77 K. © 2009 IEEE.

Trailing edge noise theory for rotating blades in uniform flow

This paper presents a new formulation for trailing edge noise radiation from rotating blades based on an analytical solution of the convective wave equation. It accounts for distributed loading and the effect of mean flow and spanwise wavenumber. A commonly used theory due to Schlinker and Amiet (1981) predicts trailing edge noise radiation from rotating blades. However, different versions of the theory exist; it is not known which version is the correct one and what the range of validity of the theory is. This paper addresses both questions by deriving Schlinker and Amiet's theory in a simple way and by comparing it to the new formulation, using model blade elements representative of a wind turbine, a cooling fan and an aircraft propeller. The correct form of Schlinker and Amiet's theory (1981) is identified. It is valid at high enough frequency, i.e. for a Helmholtz number relative to chord greater than one and a rotational frequency much smaller than the angular frequency of the noise sources.

从链丝藻(Hormidium Ktzing)到克里藻(Klebsormidium Silva,Mattox et Blackwell)的名称改变

国家自然科学重大基金资助项目 3 98994 0 0 ; 中国科学院特别支持费stz97-1 -0 1

Asymptotic stability for time-variant systems and observability: Uniform and nonuniform criteria

This paper presents some new criteria for uniform and nonuniform asymptotic stability of equilibria for time-variant differential equations and this within a Lyapunov approach. The stability criteria are formulated in terms of certain observability conditions with the output derived from the Lyapunov function. For some classes of systems, this system theoretic interpretation proves to be fruitful since - after establishing the invariance of observability under output injection - this enables us to check the stability criteria on a simpler system. This procedure is illustrated for some classical examples.

Guidance of collective cell migration by substrate geometry.

Collective behavior refers to the emergence of complex migration patterns over scales larger than those of the individual elements constituting a system. It plays a pivotal role in biological systems in regulating various processes such as gastrulation, morphogenesis and tissue organization. Here, by combining experimental approaches and numerical modeling, we explore the role of cell density ('crowding'), strength of intercellular adhesion ('cohesion') and boundary conditions imposed by extracellular matrix (ECM) proteins ('constraints') in regulating the emergence of collective behavior within epithelial cell sheets. Our results show that the geometrical confinement of cells into well-defined circles induces a persistent, coordinated and synchronized rotation of cells that depends on cell density. The speed of such rotating large-scale movements slows down as the density increases. Furthermore, such collective rotation behavior depends on the size of the micropatterned circles: we observe a rotating motion of the overall cell population in the same direction for sizes of up to 200 μm. The rotating cells move as a solid body, with a uniform angular velocity. Interestingly, this upper limit leads to length scales that are similar to the natural correlation length observed for unconfined epithelial cell sheets. This behavior is strongly altered in cells that present a downregulation of adherens junctions and in cancerous cell types. We anticipate that our system provides a simple and easy approach to investigate collective cell behavior in a well-controlled and systematic manner.

Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.

We demonstrate vertically aligned epitaxial GaAs nanowires of excellent crystallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is achieved by a two-temperature growth procedure, consisting of a brief initial high-temperature growth step followed by prolonged growth at a lower temperature. The initial high-temperature step is essential for obtaining straight, vertically aligned epitaxial nanowires on the (111)B GaAs substrate. The lower temperature employed for subsequent growth imparts superior nanowire morphology and crystallographic quality by minimizing radial growth and eliminating twinning defects. Photoluminescence measurements confirm the excellent optical quality of these two-temperature grown nanowires. Two mechanisms are proposed to explain the success of this two-temperature growth process, one involving Au nanoparticle-GaAs interface conditions and the other involving melting-solidification temperature hysteresis of the Au-Ga nanoparticle alloy.

Introducing carbon diffusion barriers for uniform, high-quality graphene growth from solid sources.

Carbon diffusion barriers are introduced as a general and simple method to prevent premature carbon dissolution and thereby to significantly improve graphene formation from the catalytic transformation of solid carbon sources. A thin Al2O3 barrier inserted into an amorphous-C/Ni bilayer stack is demonstrated to enable growth of uniform monolayer graphene at 600 °C with domain sizes exceeding 50 μm, and an average Raman D/G ratio of <0.07. A detailed growth rationale is established via in situ measurements, relevant to solid-state growth of a wide range of layered materials, as well as layer-by-layer control in these systems.

All-chemical vapor deposited graphene/silicon nitride TFTs

All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm 2V-1s-1 have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through allchemical vapor deposition processes. © The Electrochemical Society.