954 resultados para Intrinsic ferromagnetism


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In this study, bulk and multifoil diffusion couple experiments were conducted to examine the interdiffusion process in Ni-Pt and Co-Pt binary alloy systems. Inter-, intrinsic-, and tracer-diffusion coefficients at different temperatures, and as a function of the composition, were estimated by using the experimental data. Results show that in both the alloy systems, Pt is the slower diffusing species, and hence the interdiffusion process is controlled by either Ni or Co. The thermodynamic driving force makes the intrinsic diffusion coefficients of Co and Ni higher in the range of 30-70 at.%. The low activation energy for Co and Ni impurity diffusion in Pt compared with Pt in Ni and Co indicates that the size of the atoms plays an important role. The vacancy wind effects on the diffusion process are examined in detail, and it was demonstrated that its contribution falls within the experimental scatter and hence can be neglected.

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We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm(-1) in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy. (C) 2011 American Institute of Physics. [doi:10.1063/1.3654151]

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We perform atomistic simulations on the fracture behavior of two typical metallic glasses, one brittle (FeP) and the other ductile (CuZr), and show that brittle fracture in the FeP glass is governed by an intrinsic cavitation mechanism near crack tips in contrast to extensive shear banding in the ductile CuZr glass. We show that a high degree of atomic scale spatial fluctuations in the local properties is the main reason for the observed cavitation behavior in the brittle metallic glass. Our study corroborates with recent experimental observations of nanoscale cavity nucleation found on the brittle fracture surfaces of metallic glasses and provides important insights into the root cause of the ductile versus brittle behavior in such materials.

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Antiferroelectric materials (example: lead zirconate and modified lead zirconate stannate), in which a field-induced ferroelectric phase transition is feasible due to a small free energy difference between the ferroelectric and the antiferroelectric phases, are proven to be very good candidates for applications involving actuation and high charge storage devices. The property of reverse switching from the field-induced ferroelectric to antiferroelectric phases is studied as a function of temperature, applied electric field, and sample thickness in antiferroelectric lead zirconate thin films deposited by pulsed excimer laser ablation. The maximum released charge density was 22 μC/cm2 from a stored charge density of 36 μC/cm2 in a 0.55 μ thick lead zirconate thin film. This indicated that more than 60% of the stored charge could be released in less than 7 ns at room temperature for a field of 200 kV/cm. The content of net released charge was found to increase with increasing field strength, whereas with increasing temperature the released charge was found to decrease. Thickness-dependent studies on lead zirconate thin films showed that size effects relating to extrinsic and intrinsic pinning mechanisms controlled the released and induced charges through the intrinsic switching time. These results proved that antiferroelectric PZ thin films could be utilized in high-speed charge decoupling capacitors in microelectronics applications.

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We report the effect of surface treatments on the dynamic conductance curves (G=dI/dV‐V) of Au‐Bi2Sr2CaCu2O8+δ (single crystal) point contact junctions of variable junction conductances (100 mS≳G≳100 μS). We find that if the crystal surface is cleaved freshly just prior to making contacts, all irreproducible sharp multiple features often observed in tunneling data of Bi(2212) oxide superconductors disappear. If the cleaved crystal surfaces are left under ambient conditions for a few days and the tunneling experiments are repeated, these multiple features reappear. We also find that if the current in the junction is made to pass predominantly through the bulk (and not along the surface), gap features are sharper. The observed conductance curves are fitted to a modified model [G. E. Blonder et al., Phys. Rev. B 25, 4515 (1982)] and estimated gap values are Δ≂28 to 30 meV corresponding to the ratio 2Δ/kBTc ≂ 7.5 with lifetime broadening Γ/Δ≂0.2. We conclude that the sharp multiple features observed in Bi(2212) tunneling curves has no intrinsic origin in the bulk and they arise from the surface only.

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A deep‐level transient spectroscopy (DLTS) technique is reported for determining the capture cross‐section activation energy directly. Conventionally, the capture activation energy is obtained from the temperature dependence of the capture cross section. Capture cross‐section measurement is often very doubtful due to many intrinsic errors and is more critical for nonexponential capture kinetics. The essence of this technique is to use an emission pulse to allow the defects to emit electrons and the transient signal from capture process due to a large capture barrier was analyzed, in contrast with the emission signal in conventional DLTS. This technique has been applied for determining the capture barrier for silicon‐related DX centers in AlxGa1−xAs for different AlAs mole fractions.

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In1−xMnxSb crystals are grown with different Mn doping concentrations (x = 0.006, 0.01, 0.02, and 0.04) beyond the equilibrium solubility limit by the horizontal Bridgman technique. Structural, magnetic, and magnetotransport properties of the grown crystals are studied in the temperature range 1.4–300 K. Negative magnetoresistance and anomalous Hall effect are observed below 10 K. The anomalous Hall coefficient is found to be negative. The temperature dependence of the magnetization measurement shows a magnetic ordering below 10 K, which could arise from InMnSb alloy formation. Also, the saturation in magnetization observed even at room temperature suggests the existence of ferromagnetic MnSb clusters in the crystals, which has been verified by scanning electron microscopy studies. The carrier concentration increases with Mn doping, and this results in a decrease of resistivity. The carrier concentration and mobility at room temperature for the doped crystals are ∼ 2×1019 cm−3 and ∼ 200 cm2/V s, respectively. The observed anomalous Hall effect suggests the carrier mediated ferromagnetism below 10 K in In1−xMnxSb crystals.

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Although Al(1-x)Ga(x)N semiconductors are used in lighting, displays and high-power amplifiers, there is no experimental thermodynamic information on nitride solid solutions. Thermodynamic data are useful for assessing the intrinsic stability of the solid solution with respect to phase separation and extrinsic stability in relation to other phases such as metallic contacts. The activity of GaN in Al(1-x)Ga(x)N solid solution is determined at 1100 K using a solid-state electrochemical cell: Ga + Al(1-x)Ga(x)N/Fe, Ca(3)N(2)//CaF(2)//Ca(3)N(2), N(2) (0.1 MPa), Fe. The solid-state cell is based on single crystal CaF(2) as the electrolyte and Ca(3)N(2) as the auxiliary electrode to convert the nitrogen chemical potential established by the equilibrium between Ga and Al(1-x)Ga(x)N solid solution into an equivalent fluorine potential. Excess Gibbs free energy of mixing of the solid solution is computed from the results. Results suggest an unusual mixing behavior: a mild tendency for ordering at three discrete compositions (x = 0.25, 0.5 and 0.75) superimposed on predominantly positive deviation from ideality. The lattice parameters exhibit slight deviation from Vegard's law, with the a-parameter showing positive and the c-parameter negative deviation. Although the solid solution is stable in the full range of compositions at growth temperatures, thermodynamic instability is indicated at temperatures below 410 K in the composition range 0.26 <= x <= 0.5. At 355 K, two biphasic regions appear, with terminal solid solutions stable only for 0 <= x <= 0.26 and 0.66 <= x <= 1. The range of terminal solid solubility reduces with decreasing temperature. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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The effect of deposition temperature on residual stress evolution with temperature in Ti-rich NiTi films deposited on silicon substrates was studied. Ti-rich NiTi films were deposited on 3? Si (100) substrates by DC magnetron sputtering at three deposition temperatures (300, 350 and 400 degrees C) with subsequent annealing in vacuum at their respective deposition temperatures for 4 h. The initial value of residual stress was found to be the highest for the film deposited and annealed at 400 degrees C and the lowest for the film deposited and annealed at 300 degrees C. All the three films were found to be amorphous in the as-deposited and annealed conditions. The nature of the stress response with temperature on heating in the first cycle (room temperature to 450 degrees C) was similar for all three films although the spike in tensile stress, which occurs at similar to 330 degrees C, was significantly higher in the film deposited and annealed at 300 degrees C. All the films were also found to undergo partial crystallisation on heating up to 450 degrees C and this resulted in decrease in the stress values around 5560 degrees C in the cooling cycle. The stress response with temperature in the second thermal cycle (room temperature to 450 degrees C and back), which is reflective of the intrinsic film behaviour, was found to be similar in all cases and the elastic modulus determined from the stress response was also more or less identical. The three deposition temperatures were also not found to have a significant effect on the transformation characteristics of these films such as transformation start and finish temperatures, recovery stress and hysteresis.

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Chemotherapy is a very important therapeutic strategy for cancer treatment. The failure of conventional and molecularly targeted chemotherapeutic regimes for the treatment of pancreatic cancer highlights a desperate need for novel therapeutic interventions. Chemotherapy often fails to eliminate all tumor cells because of intrinsic or acquired drug resistance, which is the most common cause of tumor recurrence. Overexpression of RAD51 protein, a key player in DNA repair/recombination has been observed in many cancer cells and its hyperexpression is implicated in drug resistance. Recent studies suggest that RAD51 overexpression contributes to the development, progression and drug resistance of pancreatic cancer cells. Here we provide a brief overview of the available pieces of evidence in support of the role of RAD51 in pancreatic tumorigenesis and drug resistance, and hypothesize that RAD51 could serve as a potential biomarker for diagnosis of pancreatic cancer. We discuss the possible involvement of RAD51 in the drug resistance associated with epithelial to mesenchymal transition and with cancer stem cells. Finally, we speculate that targeting RAD51 in pancreatic cancer cells may be a novel approach for the treatment of pancreatic cancer. (C) 2011 Elsevier B.V. All rights reserved.

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Compositionally varying multilayers of (1−x) Pb(Mg1/3N2/3)O3–(x) PbTiO3 were fabricated using pulsed laser ablation technique. An antiferroelectriclike polarization hysteresis was observed in these relaxor based multilayer systems. The competition among the intrinsic ferroelectric coupling in the relaxor ferroelectrics and the antiferroelectric coupling among the dipoles at the interface gives rise to an antiferroelectriclike polarization behavior. An increment in the coercive field and the applied field corresponding to the polarization flipping at low temperatures, provide further insight on the competition among the long-range ferroelectric interaction and the interfacial interaction in the polarization behavior of these relaxor multilayers.

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1. Dispersal ability of a species is a key ecological characteristic, affecting a range of processes from adaptation, community dynamics and genetic structure, to distribution and range size. It is determined by both intrinsic species traits and extrinsic landscape-related properties. 2. Using butterflies as a model system, the following questions were addressed: (i) given similar extrinsic factors, which intrinsic species trait(s) explain dispersal ability? (ii) can one of these traits be used as a proxy for dispersal ability? (iii) the effect of interactions between the traits, and phylogenetic relatedness, on dispersal ability. 3. Four data sets, using different measures of dispersal, were compiled from published literature. The first data set uses mean dispersal distances from capture-mark-recapture studies, and the other three use mobility indices. Data for six traits that can potentially affect dispersal ability were collected: wingspan, larval host plant specificity, adult habitat specificity, mate location strategy, voltinism and flight period duration. Each data set was subjected to both unifactorial, and multifactorial, phylogenetically controlled analyses. 4. Among the factors considered, wingspan was the most important determinant of dispersal ability, although the predictive powers of regression models were low. Voltinism and flight period duration also affect dispersal ability, especially in case of temperate species. Interactions between the factors did not affect dispersal ability, and phylogenetic relatedness was significant in one data set. 5. While using wingspan as the only proxy for dispersal ability maybe problematic, it is usually the only easily accessible species-specific trait for a large number of species. It can thus be a satisfactory proxy when carefully interpreted, especially for analyses involving many species from all across the world.

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In -situ soils in gee-material spectrum might arise due to sedimentation or could be non-sedimentary residual formations. The inherent nature and diversity of geological processes involved in the soil formation stage itself are responsible for a wide variability in the in-situ state of the soil. In this paper the possibility of analyses to arrive at engineering parameters of residual soils with varied degrees of residual or acquired cementation by the use of physical and in-situ parameters normally determined in routine investigations, are examined. An Intrinsic State Line,(ISL), with reference to an intrinsic state parameter (e/e(L)) and its variation with effective stress for reconstituted clays has been developed for residual tropical soils of non-sedimentary origin. In relation to the Intrinsic State Line (ISL), the undisturbed state, e, the potential parameter, e(L), along with the overburden pressure data has been analyzed to identify the dominance of cementation or stress history or both in controlling the compressibility and strength behaviour of natural residual soil. The location of yield stress point in relation to the ISL, pre-, and post- yield stress, compression indices along the e- log sigma(v) path provide a simple means to the analysis of the compressibility characteristics of cemented soils for analysis.

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Hydraulic conductivity of fine-grained soils has assumed greater importance in waste disposal facilities. It is necessary to understand better the factors controlling hydraulic conductivity of fine-grained soils which are used as liners in waste disposal facilities. Hydraulic Conductivity study with ten soils with two fluids having extreme dielectric constants(epsilon) namely water and CCl4 has shown that intrinsic permeability (K) increases drastically with decrease in epsilon. These changes are attributed to the significant reduction in the thickness of diffuse double layer which in turn mainly dependent on the epsilon of the permeant. Hydraulic Conductivity with water of each pair of soils having nearly same liquid limit but different plasticity properties is found to be vastly different, but found to correlate well with shrinkage index, defined as difference between the liquid and the shrinkage limits. Also the ratio Kccl(4)/K-w is found to significantly increase with the increase in the shrinkage index.

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Design of the required tool is a key and important parameter in the technique of friction stir welding (FSW). This is so because tool design does exert a close control over the quality of the weld. In an attempt to optimize tool design and its selection, it is essential and desirable to understand the mechanisms governing the formation of the weld. In this research study, few experiments were conducted to systematically analyze the intrinsic mechanisms governing the formation of the weld and to effectively utilize the analysis to establish a logical basis for design of the tool. For this purpose, the experiments were conducted using different geometries of the shoulder and pin of the rotating tool in such a way that only tool geometry had an intrinsic influence on formation of the weld. The results revealed that for a particular diameter of the pin there is an optimum diameter of the shoulder. Below this optimum shoulder diameter, the weld does not form while above the optimum diameter the overall symmetry of the weld is lost. Based on experimental results, a mechanism for the formation of friction stir weld is proposed. A synergism of the experimental results with the proposed mechanism is helpful in establishing the set of welding parameters for a given material.