De madres, ciudades y tablillas : alcances políticos y literarios de un enigma familiar en la comedia media (Antífanes, Safo, fr. 194 K.-A)

Resumen: El fragmento 194 (Kassel-Austin) del poeta cómico Antífanes, proveniente de su obra Safo (c. 360 a.C.), reproduce un diálogo entre la poetisa y un personaje desconocido que da cuenta de una adivinanza. La imagen propuesta de una mujer que protege a sus hijos, silenciosos, mientras lloran ante quien los quiera escuchar es, pues, resemantizada en el pasaje, a la vez, desde una dimensión política y un plano autorreferencial. Examinada inicialmente como una pólis que cobija a los demagogos corruptos, la escena familiar termina siendo decodificada en términos poéticos: se trata de una tablilla de escritura con letras que resultan sus mudos descendientes. El enigma, por tanto, supone una interesante estrategia para consolidar desde una visión cómica la polivalencia de la imagen maternal como un mecanismo metafórico eficiente para cargar las tintas sobre aquellas temáticas a las que el género concede un tratamiento privilegiado.

Asymptotic analysis based on K-S constitutive law for a rubber wedge compressed by a line load at its tip

In the present paper, a rubber wedge compressed by a line load at its tip is asymptotically analyzed using a special constitutive law proposed by Knowles and Sternberg (K-S elastic law) [J. Elasticity 3 (1973) 67]. The method of dividing sectors proposed by Gao [Theoret. Appl. Fract, Mech. 14 (1990) 219] is used. Domain near the wedge tip can be divided into one expanding sector and two narrowing sectors. Asymptotic equations of the strain-stress field near the wedge tip are derived and solved numerically. The deformation pattern near a wedge tip is completely revealed. A special case. i.e. a half space compressed by a line load is solved while the wedge angle is pi.

Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by chemical vapor deposition and its gate configuration was changed while determining its transistor characteristics to ensure that the measurements were not a function of different chirality or diameter CNTs. The bottom-gate exposed CNT FET utilized 900 nm SiO2 as the gate insulator. This CNT FET was then covered with TiO2 to form the bottom-gate covered channel CNT FET. Finally, the top-gate CNT FET was fabricated and the device utilized TiO 2 (K ∼ 80, equivalent oxide thickness=0.25 nm) as the gate insulator. Of the three configurations investigated, the top-gate device exhibited best subthreshold slope (67-70 mV/dec), highest transconductance (1.3 μS), and negligible hysteresis in terms of threshold voltage shift. © 2006 American Institute of Physics.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

La dinámica del viaje en el contexto del Ms. Esc. K-III-4 : Libro de Apolonio, Vida de Santa María Egipciaca, Libro de los tres reyes de Oriente

Resumen: Los personajes de los tres poemas castellanos del temprano siglo XIII que componen el manuscrito K-III-4 de la Biblioteca de San Lorenzo de El Escorial (Libro de Apolonio, Vida de Santa María Egipciaca, Libro de los tres reyes de Oriente) viajan lamentando aquello que han perdido a causa de la ira regia, el propio pecado o la amenaza de muerte inminente, pero también para superar esas pérdidas. Esos viajes representan la medida de una aventura medieval cuya dinámica expresa la concepción profunda de la trayectoria vital como prueba cristiana, según se analizará en el presente trabajo.

用赝势方法计算简单金属的弹性常数

本文利用单参数Heine-Abarenkov模型势及Hubbard-Sham介电函数计算了七种简单金属(Li,Na,K,Rb,Cs,Al和Pb)的二阶与三阶弹性常数,两个可调参数用零温零压下晶体的弹性常数C_(44)与晶格常数的实验值来确定,计算结果与实验值或其他作者的理论计算值符合得比较好,尤其是Al的三阶弹性常数,本文的计算结果比其他作者的计算结果更接近于实验值。