Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

La dinámica del viaje en el contexto del Ms. Esc. K-III-4 : Libro de Apolonio, Vida de Santa María Egipciaca, Libro de los tres reyes de Oriente

Resumen: Los personajes de los tres poemas castellanos del temprano siglo XIII que componen el manuscrito K-III-4 de la Biblioteca de San Lorenzo de El Escorial (Libro de Apolonio, Vida de Santa María Egipciaca, Libro de los tres reyes de Oriente) viajan lamentando aquello que han perdido a causa de la ira regia, el propio pecado o la amenaza de muerte inminente, pero también para superar esas pérdidas. Esos viajes representan la medida de una aventura medieval cuya dinámica expresa la concepción profunda de la trayectoria vital como prueba cristiana, según se analizará en el presente trabajo.