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As-synthesized ZnO nanostructures with a bladed bundle-like architecture have been fabricated from a flower-like precursor ZnO (.) 0.33ZnBr(2) (.) 1.74H(2)O via a mechanism of dissolution - recrystallization. Experimental conditions, such as initial reactants and reaction time, are examined. The results show that no bladed bundle-like ZnO hierarchical nanostructures can be obtained by using the same molar amount of other zinc salts, such as ZnBr2, instead of the flower-like ZnO (.) 0.33ZnBr(2) (.) 1.74H(2)O precursor, and keeping other conditions unchanged. The products were characterized by field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). The ZnO nanostructures are mainly composed of nanowires with a diameter around 40 - 50 nm and length up to 1.5 - 2.5 mu m. Meanwhile, ZnO nanoflakes with a thickness of about 4 - 5 nm attached to the surface of ZnO nanowires with a preferred radially aligned orientation. Furthermore, the photoluminescence (PL) measurements exhibited the unique white-light-emitting characteristic of hierarchical ZnO nanostructures. The emission spectra cover the whole visible region from 380 to 700 nm.

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Up-conversion of 45PbF(2)-45GeO(2)-10WO(3) oxy-fluoride glasses co-doped with Yb3+ and Er3+ ions were prepared by fusion method through melting at 1223 K and then annealing at 653 K for 4 h. Transmittance of the undoped host glass was beyond 73% in a range of 0.6-2.5 mu m and the co-doped glasses still provided good transmittance beyond 50%. Refractive indices of the host and co-doped glasses were 1.517 and 1.650, respectively. Blue, green and red fluorescence spectra were observed in a range of 400-700 nm under 980 nm diode laser excitation. Up-conversion spectra at about 410, 518, 530and 650 nm were assigned to the 4f electron transitions of H-2(9/2) -> I-4(15)/(2), H-2(15/2) -> I-4(15/2) S-4(3/2) -> I-4(15/2) and F-4(9/2) -> I-4(15/2) of Er3+ ion, respectively. The mechanism of energy transfer between Yb3+ and Er3+ ions in the glass was analyzed. Raman shift shows the non-radiative relaxation of the glass sample is low.

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Rare-earth ion (Eu3+, Tb3+, Ce3+)- doped LaPO4 nanocrystalline thin films and their patterning were fabricated by a Pechini sol-gel process combined with soft lithography on silicon and silica glass substrates. X-Ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscopy (AFM), scanning electron microcopy (SEM), optical microscopy, absorption and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicate that the films begin to crystallize at 700 degreesC and the crystallinity increases with increasing annealing temperature. The morphology of the thin film depends on the annealing temperature and the number of coating layers. The 1000 degreesC annealed single layer film is transparent to the naked eye, uniform and crack-free with a thickness of about 200 nm and an average grain size of 100 nm. Patterned thin films with different strip widths ( 5 - 50 mm) were obtained by micromolding in capillaries ( soft lithography). The doped rare earth ions show their characteristic emission in the nanocrystalline LaPO4 films, i.e., Eu3+ D-5(0)-F-7(J) (J = 1, 2, 3, 4), Tb3+ D-5(3,4) - F-7(J) ( J = 6, 5, 4, 3, 2) and Ce3+ 5d-4f transition emissions, respectively. Both the lifetimes and the PL intensities of Eu3+ and Tb3+ increase with increasing annealing temperature, and the optimum concentrations for them were determined to be 5 mol% and 16 mol% of La3+ in LaPO4 thin films, respectively. An energy transfer phenomenon from Ce3+ to Tb3+ has been observed in LaPO4 nanocrystalline thin films, and the energy transfer efficiency depends on the doping concentration of Tb3+ if the concentration of Ce3+ is fixed.

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Ce3+ and/or Tb3+-doped LaPO4 nanocrystalline thin films and their patterning were fabricated by a sol-gel process combined with soft lithography on silicon and quartz glass substrates. The results of XRD indicated that the films began to crystallize at 700 degreesC. The 1000 degreesC annealed single layer films are transparent by eyes, uniform and crack-free with a thickness of about 200 nm and an average grain size of 100 nm. Patterned thin film with different band widths (5-50 mum) were obtained by micro-molding in capillaries technique. The luminescence and energy transfer properties of Ce3+ and Tb3+ were studied in LaPO4 films.

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A flow injection amperometric immunoassay system based on the use of screen-printed carbon electrode for the detection of mouse IgG was developed. An immunoelectrode strip, on which an immunosorbent layer and screen-printed carbon electrode were integrated, and a proposed flow cell have been fabricated. The characterization of the flow immunoassay system and parameters affecting the performance of the immunoassay system were studied and optimized. Amperometric detection at 0.0 V (versus Ag/AgCl) resulted in a linear detection range of 30-700 ng ml(-1), with a detection limit of 3 ng ml(-1). The signal variation among electrode strips prepared from variant batch did not exceed 8.5% (n = 7) by measuring 0.5 mug ml(-1) antigen standard solution.

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By using inorganic salts as raw materials and citric acid as complexing agent, spinel oxide ZnGa2O4 and Mn2+, Eu3+-doped ZnGa2O4 phosphor powders were prepared by a citrate-gel process. X-ray diffraction (XRD), TG-DTA, FT-IR. and luminescence excitation and emission spectra were used to characterize the resulting products. The results of XRD reveal that the powders begin to crystallize at 500 degreesC and pure ZnGa2O4 phase is obtained at 700 degreesC, which agrees well with the results of TG-DTA and FT-IR. In the crystalline ZnGa2O4, the Eu shows its characteristic red (615 nm, D-5(0)-F-7(2)) emission with a quenching concentration of 5 mol% (of Ga3+), and the Mn shows green emission (505 nm, T, A,) with a quenching concentration of 0.1 mol% (of Zn2+). The luminescence mechanism of ZnGa2O4:Mn2+/Eu3+ is presented.

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Rare-earth (Eu3+, Tb3+)-doped Ca2Y8(SiO4)(6)O-2 luminescent thin films were dip-coated on silicon and quartz glass substrates through a sol-gel route. X-ray diffraction (XRD), scanning electron microscopy (SEM) and luminescence excitation and emission spectra as well as luminescence decays were used to characterize the resultant films. The results of XRD reveal that these films remain amorphous below 700 degreesC, begin to crystallize at 800 degreesC, and crystallize completely around 1000 degreesC with an oxyapatite structure. The grain structure of the film can be seen clearly from SEM micrographs, where particles with various shape and average size of 250 nm can be resolved. The Eu3+ and Tb3+ ions show their characteristic red (D-5(0)-F-7(2)) and green (D-5(4)-F-7(5)) emission in the films with a quenching concentration of 10 and 6 mol% (of Y3+), respectively. The lifetime of Eu-3divided by increases with the heat treatment temperature front 700 to 1100 degreesC.

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Rare-earth and lead ions (Eu3+, Tb3+, Dy3+, Pb2+) doped Ca2Y8 (SiO4)(6)O-2 and Ca2Gd8(SiO4)(6)O-2 thin films have been dip- coated on silicon and quartz glass substrates through the sol- gel route. X- Ray diffraction (XRD), TG- DTA, scanning electron microscopy (SEM), atomic force microscopy (AFM), FT- IR and luminescence excitation and emission spectra as well as luminescence decays were used to characterize the resulting films. The results of XRD reveal that these films remain amorphous below 700 degreesC, begin to crystallize at 800 degreesC and crystallize completely around 1000 degreesC with an oxyapatite structure. The grain structure of the film can be seen clearly from SEM and AFM micrographs, where particles with various shapes and average size of 250 nm can be resolved. Eu3+ and Tb3+ show their characteristic red (D-5(0)-F-7(2)) and green (D-5(4) - F-7(5)) emission in the films with a quenching concentration of 10 and 6 mol% (of Y3+), respectively. The lifetime and emission intensity of Eu3+ increase with the temperature treatment from 700 to 1100 degreesC, while those of Tb3+ show a maximum at 800 degreesC. Energy transfer phenomena have been observed by activating the oxyapatite film host- lattice Ca2Gd8(SiO4)(6)O-2 with Tb3+ (Dy3+). In addition, Pb2+ can sensitize the Gd3+ sublattice in Ca2Gd8(SiO4)(6)O-2.

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Eu3+-activated calcium silicate (CaO-SiO2:Eu3+) luminescent films were prepared by the sol-gel method. The structural evolution of the film was studied by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM), and the luminescence properties of the phosphor films were investigated as a function of heat treatment temperature. The XRD study indicates that a kilchoanite phase forms in the film sintered at 800 degreesC, which is different from that in gel powder treated under the same conditions. The SEM results show that the film thickness decreases and the particles in the film become smaller with increasing heat treatment temperature. The CaO-SiO2:Eu film shows the characteristic emission of Eu3+ under UV excitation, with the Eu3+ D-5(0)-->F-7(2) band (616 nm) being the most prominent. A large difference in the Eu3+ lifetime is observed between the film samples treated at 500 and 700 degreesC (or above). Concentration quenching occurs when the Eu3+ doping concentration is above 6 mol% of Ca2+ in the film.

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A series of solid electrolytes (Ce0.8RE0.2)(1-x)MxO2-delta(RE: Rare earth, M: Alkali earth) were prepared by sol-gel methods. XRD indicated that a pure fluorite phase was formed at 800 degrees C. The synthesis temperature by the sol-gel methods was about 700 degrees C lower than by the traditional ceramic method. The electrical conductivity and impedance spectra were measured. XPS showed that the oxygen vacancy increased obviously by doping MO, thus, resulting in the increase of the oxygen ionic transport number and conductivity. The performance of ceria-based solid electrolyte was improved. The effects of RE2O3 and MO on the electrical properties were discussed. The conductivity and the oxygen ionic transport number of (Ce0.8Sm0.2)(1-0.05)Ca0.05O2-delta is 0.126 S.cm(-1) and 0.99 at 800 degrees C, respectively.

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用溶胶凝胶法制备出纳米凝胶粉,于不同温度下热处理形成纳米晶,研究热处理温度对粒子大小、形貌、品相转变及吸附能力的关系.XRD、FT-IR、Raman光谱研究表明200~600℃热处理1h的TiO2纳米晶为锐钛矿相,在700℃热处理的纳米晶为锐钛矿相与金红石相共存,800℃热处理的纳米晶完全为金红石相;TEM、TG、XPS的结果证明热处理温度越高,纳米粒子的粒径越大,吸附能力也越弱.

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A series of novel polyimides was synthesized from alicyclic diamines and various aromatic dianhydrides by one-step polymerization in m-cresol without a catalyst. The polymerization was conducted for 4 hours with refluxing, which was enough to obtain the polymers with high molecular weight. The inherent viscosities of the resulting polyimides were in the range of 0.30 similar to 1.29 dL/g. The prepared polyimides showed excellent thermal stabilities and good solubility. All the polymers were readily soluble in common organic solvents such as chloroform, tetrachloroethane (TCE), dimethylacetamide (DMAc), etc and the glass transition temperatures were observed at 199 to 311 degrees C. UV-visible spectra were obtained to measure the transparency of polymer films. All the polymers showed high transmission above 90% in the wavelength of 400 similar to 700 nm.

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研究了基体改进剂及其用量,硒的最佳灰化温度和原子化温度,以及共存元素的干扰。结果表明,用钯和钙作混合基体改进剂,不仅可以明显消除共存元素的干扰,而且还能大大提高硒的灰化温度和灵敏度。用平台石墨炉原子吸收法直接测定饲料中痕量硒,特征量为39ng,检出限为0.11μg/g,相对标准偏差为4.9~7.7%,回收率为92~100%。

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Bright blue electroluminescent devices have been fabricated using poly (N-vinylcarbazole) (PVK) doped with perylene as the emissive layer, poly(p-phenylenevinylene) (PPV) as the hole-transporting layer, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), tris(8-hydroxyquinoline)aluminum (Alq(3)) as the electron-transporting layer, and Al as the cathode. A luminance of 700 cd/m(2) and a luminescent efficiency of 0.8% are achieved at a drive voltage of 36 V. In the experiment, it is found that the introduction of electron-transporting layer PBD has a great effect on the emissive color of the electroluminescent devices prepared by PVK doped with perylene. Yellow-green emission is observed from the device structure of glass substrate/indium-tin-oxide/PVK:perylene/Al. The possible emissive mechanisms are given. The effect of the transporting layer on the electroluminescence is also discussed. (C) 1997 Elsevier Science S.A.

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利用动态力学分析(DMA).透射电子显微镜(TEM)和小角X光光散射(SAXS)对聚砜(PSF)、聚二甲基硅氧烷(PDMS)和聚对羟基苯乙烯(PHS)三元多嵌段共聚物PSF—PDMS—PHSn的形态结构进行了研究.结果表明,PSF—PDMS—PHSn的形态结构出现了许多新的现象,除具有微相分离的基本特征外,还出现双连续相双分散相的特征.在适当的嵌段长度和组成下,通过TEM观察到一种新的特殊形态蜂窝状形态结构,并在嵌段共聚物两相界面处直接观察到非常清晰的界面相.同时,对该形态的形成过程作了初步讨论.