Mode division multiplexing exploring hollow-core photonic bandgap fibers

We review our recent exploratory investigations on mode division multiplexing using hollow-core photonic bandgap fibers (HC-PBGFs). Compared with traditional multimode fibers, HC-PBGFs have several attractive features such as ultra-low nonlinearities, low-loss transmission window around 2 μm etc. After having discussed the potential and challenges of using HC-PBGFs as transmission fibers for mode multiplexing applications, we will report a number of recent proof-of-concept results obtained in our group using direct detection receivers. The first one is the transmission of two 10.7 Gbit/s non-return to zero (NRZ) data signals over a 30 m 7-cell HC-PBGF using the offset mode launching method. In another experiment, a short piece of 19-cell HC-PBGF was used to transmit two 20 Gbit/s NRZ channels using a spatial light modulator for precise mode excitation. Bit-error-ratio (BER) performances below the forward-error-correction (FEC) threshold limit (3.3×10-3) are confirmed for both data channels when they propagate simultaneously. © 2013 IEEE.

制约蓝藻种群的生态因子

藻类和微生物作为水体生态系统中的成员,它们之间的相互影响是关系生态平衡不容忽视的重要因素之一。本文报道了不同类型的11株抑制或溶解蓝藻的微生物,描述了它们的溶藻特点及其它生物学特性。它们在分类上分别属于粘球菌、溶解杆菌、屈挠杆菌、鞘丝菌、芽孢杆菌及链霉菌等6个属,其中包括直孢鞘丝菌、中华屈挠杆菌两个本文作者发表的新种。鞘丝菌能溶藻是第一次记载。研究结果进一步揭示了对蓝藻起制约作用的微生物类群的多样性;为了解此类生态系统中微生物类群提供了新的信息。

双季晚稻田大面积放养固氮蓝藻的试验

通过晚稻田大面积放养固氮蓝藻试验,我们初步提出了土池大量培养和茬口田大面积生产藻种等一系列的培养和生产藻种的技术措施;生产了30吨的鲜藻种接种到晚稻田中。经过加强管理,先锋大队990亩晚稻田全部养藻化。接种的藻生长旺盛,平均产量达到1000斤/亩以上。抽样测产估计,晚稻田中鲜藻量达到500吨。晚稻田养藻使水稻增产约10%,个别达到20%以上。因此,晚稻田放养固氮蓝藻为晚稻开辟了新的有希望的肥源。

Field and experimental studies on the combined impacts of cyanobacterial blooms and small algae on crustacean zooplankton in a large, eutrophic, subtropical, Chinese lake

Field and experimental studies were conducted to evaluate the combined impacts of cyanobacterial blooms and small algae on seasonal and long-term changes in the abundance and community structure of crustacean zooplankton in a large, eutrophic, Chinese lake, Lake Chaohu. Seasonal changes of the crustacean zooplankton from 22 sampling stations were investigated during September 2002 and August 2003, and 23 species belonging to 20 genera were recorded. Daphnia spp. dominated in spring but disappeared in mid-summer, while Bosmina coregoni and Ceriodaphnia cornuta dominated in summer and autumn. Both maximum cladoceran density (310 ind. l(-1)) and biomass (5.2 mg l(-1)) appeared in autumn. Limnoithona sinensis, Sinocalanus dorrii and Schmackeria inopinus were the main species of copepods. Microcystis spp. were the dominant phytoplankton species and formed dense blooms in the warm seasons. In the laboratory, inhibitory effects of small colonial Microcystis on growth and reproduction of Daphnia carinata were more remarkable than those of large ones, and population size of D. carinata was negatively correlated with density of fresh large colonial Microcystis within a density range of 0-100 mg l(-1) (r = -0.82, P < 0.05). Both field and experimental results suggested that seasonal and long-term changes in the community structure of crustacean zooplankton in the lake were shaped by cyanobacterial blooms and biomass of the small algae, respectively, i.e., colonial and filamentous cyanobacteria contributed to the summer replacement of dominant crustacean zooplankton from large Daphnia spp. to small B. coregoni and C. cornuta, while increased small algae might be responsible for the increased abundance of crustacean zooplankton during the past decades.

Climbing vertical terrains with a self-contained robot

Vertical climbing on a variety of flat surfaces with a single robot has been previously demonstrated using vacuum suction, electrostatic adhesion, and biologically inspired approaches, etc. These methods generally have a low attachment strength, and it is not clear whether they can provide satisfactory attachment on vertical terrains with richer 3D features. Recent development of a climbing technology based on hot melt adhesives (HMAs) has shown its advantage with a high attachment strength through thermal bonding and viability to any solid surfaces. However, its feasibility for vertical climbing has only been proven on flat surfaces and with external energy supplies. This paper provides quantitative measurements for vertical climbing performance on five types of surfaces and terrains with a self-contained robot exploiting HMAs. We show that robust vertical climbing on multiple terrains can be achieved with reliable high-strength attachment. © 2012 IEEE.

Observations on behavior and ecology of the Yangtze finless porpoise (Neophocaena phocaenoides asiaeorientalis) group at Tian-e-Zhou Oxbow of the Yangtze River

The authors made 39 surveys (a total of 161 days) in the Tian-e-Zhou Oxbow of the Yangtze River, China, for observing 13 Yangtze finless porpoises (Neophocaena phocaenoides asiaeorientalis) captured from the main stream of the Yangtze River and 7 juveniles born in the oxbow from January 1997 to July 2000. The animals were usually divided into several "core" groups and moved around in shallow, muddy-bottom areas with the largest individual in the lead. Each core group was composed of 2-3 animals (either 2 adults, 1 adult and 1 juvenile, 2 adults and 1 juvenile, or 2 adults and 1 calf). Newly-released animals joined the other animals first, and then reorganized their own groups one or two days later. Average breath interval was 34.4 s (+/- s.d. 4.39) for individuals in the group. The animals mated from May through June and gave birth during the second and last ten days of April of the next year. The gestation period was estimated as 310 - 320 days. Calves over 5 months old began to eat small fish. The distance of calves swimming apart from their suspected mothers increased each month. These findings will help in the management of the reserve to protect this unique freshwater porpoise.

Small SiGe quantum dots obtained by excimer laser annealing

In this paper, we obtain SiGe quantum dots with the diameters and density of 15-20 nm and 1.8 x 10(11) cm(-2), respectively, by 193 nm excimer laser annealing of Si0.77Ge0.23 strained films. Under the excimer laser annealing, only surface atoms diffusion happens. From the detailed statistical information about the size and shape of the quantum dots with different annealing time, it is shown that the as-grown self-assembled quantum dots, especially the {105}-faceted dots, are not stable and disappear before the appearance of the laser-induced quantum dots. Based on the calculation of surface energy and surface chemical potential, we show that the {103}-faceted as-grown self-assembled quantum dots are more heavily strained than the {105}-faceted ones, and the heavy strain in the dot can decrease the surface energy of the dot facets. The formation of the laser-induced quantum dots, which is also with heavy strain, is attributed to kinetic constraint. (c) 2008 Elsevier B.V. All rights reserved.

The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 x 10(5) cm(-2) was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was investigated. We demonstrated that the relatively higher temperature (350 degrees C) for the growth of Ge seed layer significantly improved the crystal quality and the Hall hole mobility of the Ge epilayer. (C) 2008 Elsevier B.V. All rights reserved.

Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method

Hall effect, Raman scattering, photoluminescence spectroscopy (PL), optical absorption (OA), mass spectroscopy, and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed chemical vapor transport method. The results indicate that shallow donor impurities (Ga and Al) are the dominant native defects responsible for n-type conduction of the ZnO single crystal. PL and OA results suggest that the as-grown and annealed ZnO samples with poor lattice perfection exhibit strong deep level green photoluminescence and weak ultraviolet luminescence. The deep level defect in as-grown ZnO is identified to be oxygen vacancy. After high-temperature annealing, the deep level photoluminescence is suppressed in ZnO crystal with good lattice perfection. In contrast, the photoluminescence is nearly unchanged or even enhanced in ZnO crystal with grain boundary or mosaic structure. This result indicates that a trapping effect of the defect exists at the grain boundary in ZnO single crystal. (C) 2007 Elsevier B.V. All rights reserved.

Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers

Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited.

Equilateral-Triangle and Square Resonator Semiconductor Microlasers

The characteristics of equilateral-triangle resonator (ETR) and square resonator microlasers are reported, which are potential light sources in the photonic integrations. Based on the numerical simulations, we find that high-efficiency directional emission can be achieved for the triangle and square microlasers by directly connecting an output waveguide to the resonators. The electrically injected InP/InGaAsP ETR and square resonator microlasers with a 2-mu m-wide output waveguide were fabricated by standard photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave (CW) operations were achieved for the ETR microlasers with the side length from 10 to 30 mu m and the square resonator microlasers with the side length of 20 mu m. The output power versus CW injection current and the laser spectra are presented for an ETR microlaser up to 310 K and a square resonator microlaser to 305 K. The lasing spectra with mode wavelength intervals as that of whispering-gallery-type modes and Fabry-Perot modes are observed for two square lasers, which can lase at low temperature and room temperature, respectively.

Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition

We have investigated the optical properties of AlGaN grown on sapphire. It is found that two main luminescence peaks occur in the cathodoluminescence (CL) spectra of AlGaN films, and their energy separation increases with the increase of Al source flux during the growth. Spatially resolved CL investigations have shown that the line splitting is a result of variation of AlN mole fraction within the layer. The Al composition varies in both lateral and vertical direction. It is suggested that the difference in the surface mobility of Al and Ga atoms, especially, its strong influence on the initial island coalescence process and the formation of island-like regions on the uneven film surface, is responsible for the Al composition inhomogeneity. (C) 2008 Elsevier B.V. All rights reserved.

Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures

We report on optimizing the GaAs capping layer growth of 1.3 mu m InAs quantum dots (QDs) by a combined two-temperature and annealing process at low temperatures using metalorganic chemical vapor deposition. The initial part (tnm) of the capping layer is deposited at a low temperature of 500 degrees C, which is the same for the growth of both the QDs and a 5-nm-thick In0.15Ga0.85As strain-reducing capping layer on the QDs, while the remaining part is grown at a higher temperature of 560 degrees C after a rapid temperature rise and subsequent annealing period at this temperature. The capping layer is deposited at the low temperatures (<= 560 degrees C) to avoid postgrowth annealing effect that can blueshift the emission wavelength of the QDs. We demonstrate the existence of an optimum t (=5 nm) and a critical annealing time (>= 450s) during the capping, resulting in significantly enhanced photoluminescence from the QDs. This significant enhancement in photoluminescence is attributed to a dramatic reduction of defects due to the optimized capping growth. The technique reported here has important implications for realizing stacked 1.3 mu m InAs/GaAs QD lasers. (C) 2008 Elsevier B.V. All rights reserved.