Liquid crystal based continuous phase retarder: From optically neutral to a quarter waveplate in 200 microseconds

Liquid crystal variable phase retarders have been incorporated into prototype devices for optical communications system applications, both as endless polarization controllers 1,2,3, and as holographic beam steerers 4. Nematic liquid crystals allow continuous control of the degree of retardation induced at relatively slow switching speeds, while ferroelectric liquid crystal based devices allow fast (sub millisecond) switching, but only between two bistable states. The flexoelectro-optic effect 5,6 in short-pitch chiral nematic liquid crystals allows both fast switching of the optic axis and continuous, electric field dependent control of the degree of rotation of the optic axis. A novel geometry for the flexoelectro-optic effect is presented here, in which the helical axis of the chiral nematic is perpendicular to the cell walls (grandjean texture) and the electric field is applied in the plane of the cell. This facilitates deflection of the optic axis of the uniaxial negatively birefringent material from lying along the direction of propagation to having some component in the polarization plane of the light. The device is therefore optically neutral at zero field for telecommunications wavelengths (1550nm), and allows a continuously variable degree of phase excursion to be induced, up to 2π/3 radians achieved so far in a 40μm thick cell. The retardation has been shown both to appear, on application of the field, and disappear on removal, at speeds of 100-500 μs. The direction of deflection of the optic axis is also dependent on the direction of the field, allowing the possibility, in a converging electrode "cartwheel cell", of endless rotation of the liquid crystal waveplate at a higher rate than achievable through dielectric coupling to plain nematic materials.

Effect of polymer concentration on stabilized large-tilt-angle flexoelectro-optic switching

In this letter, the uniform lying helix (ULH) liquid crystal texture, required for the flexoelectro-optic effect, is polymer stabilized by the addition of a small percentage of reactive mesogen to a high-tilt-angle (φ>60°) bimesogenic chiral nematic host. The electro-optic response is measured for a range of reactive mesogen concentration mixtures, and compared to the large-tilt-angle switch of the pure chiral nematic mixture. The optimum concentration of reactive mesogen, which is found to provide ample stabilization of the texture with minimal impact on the electro-optic response, is found to be approximately 3%. Our results indicate that polymer stabilization of the ULH texture using a very low concentration of reactive mesogen is a reliable way of ruggedizing flexoelectro-optic devices without interfering significantly with the electro-optics of the effect, negating the need for complicated surface alignment patterns or surface-only polymerization. The polymer stabilization is shown to reduce the temperature dependence of the flexoelectro-optic response due to "pinning" of the chiral nematic helical pitch. This is a restriction of the characteristic thermochromic behavior of the chiral nematic. Furthermore, selection of the temperature at which the sample is ultraviolet cured allows the tilt angle to be optimized for the entire chiral nematic temperature range. The response time, however, remains more sensitive to operating temperature than curing temperature. This allows the sample to be cured at low temperature and operated at high temperature, providing simultaneous optimization of these two previously antagonistic performance aspects. © 2006 American Institute of Physics.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Integrated optically triggered polarisation-switching in InGaAsP twin-stripe injection lasers

A new form of ultrafast bistable polarization switching in twin-stripe injection lasers has been observed. For the first time, triggering between bistable states has been achieved by injecting light from a neighboring laser integrated on the same chip. Ultrafast switching times of 250 ps have been measured (detector limited).

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.

Multi-colour switching of polymer stabilized chiral nematic liquid crystal devices

We have fabricated a series of polymer stabilized chiral nematic test cells for use as flexoelectro-optic devices. The devices fabricated were based on commercial chiral nematic mixtures which were polymer stabilized so as to enhance the uniformity and stability of the uniform lying helix texture in the cells. During fabrication and test procedures a series of unusual scattering states have been observed within the devices at different viewing angles. The observations made so far indicate that the properties of the scattering state lies somewhere between the focal conic texture and the Grandjean or planar texture and that the devices exhibit both a helical pitch selective reflection and scattering effect. What is even more dramatic is that the wavelength selectivity of the scattering effect can be tuned by an applied field. In addition, we show that it is possible to achieve good uniform lying helix textures from such devices. Moreover, we show that in certain cases the spontaneous alignment of the helix in the plane of the device opens up the possibility of a new mode of switching. Flexoelectric, Redshift, Coloured scattering, Liquid crystal, Polymer-stabilized liquid-crystal;.

Magnetic switching and anisotropy in nanomagnets: the influence of size and shape

Arrays of nanomagnets were fabricated out of Ni80Fe14Mo5 in the lateral size range 500-30nm and the thickness range 3-20nm. Elliptical, triangular, square, pentagonal and circular geometries were all considered. The magnetic properties of these nanomagnets were probed rapidly and non-invasively using a high sensitivity magneto-optical method.

Reconfigurable free-space optical switching technologies for storage area networks

Reconfigurable shutter-based free-space optical switching technologies using fiber ribbon and multiple wavelengths per fiber for Storage Area Networks (SANs) application are presented and demonstrated. ©2009 SPIE-OSA-IEEE.

Reconfigurable free-space optical switching technologies for storage area networks

Reconfigurable shutter-based free-space optical switching technologies using fiber ribbon and multiple wavelengths per fiber for Storage Area Networks (SANs) application are presented and demonstrated. ©2009 Optical Society of America.