969 resultados para nodular defect


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A new crystal of aluminophosphate, AIPO(4)(.)H(2)O, is synthesized from two-batch aqueous solution under hydrothermal conditions. Three types of the crystal habits, i.e. the tetragonal double pyramid, the tetragonal prism and the plate-type tetragonal prism, are found from batch-A solution. Two types of the crystal habits, i.e. the hexagonal pyramid and the strip-type tetragonal prism, are found from batch-B solution. The change of crystal morphology is originated from the fluctuation of the synthesis conditions, such as the supersaturation, the temperature and the impurity content. It causes change of the step energies, the defect density and the step roughness, and further, change of the growth rates. Since the crystal morphology is sensitive to the mass transport mechanism, the crystal habits could be changed under the microgravity.

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Esta investigación se realizó en el Centro Experimental "La Compañía" ubicada en San Marcos, Carazo, con el objetivo de evaluar la adaptabilidad de las cepas en las condiciones estudiadas, determinar cuál de las cepas es la más infectiva y efectiva en cuanto a la nodulación y determinar su efecto en el crecimiento y rendimiento del cultivo del frijol (Phaseolus vulgaris L.) var. Rev. 84. Los factores evaluados fueren 5 cepas de Rhisoblum leguminosearum by. phaseoli y 3 testigos: 1 Testigo Absoluto (no inoculado. no fertilizado) Y 2 Testigos Relativos (no inoculados y fertilizados). El diseño experimental utilizado fue el de bloques completos al azar (SCA), con 4 repeticiones. La parcela experimental del ensayo fue de 32 (8 m x 4 m), la distancia de siembra fue de 0.1 m entre plantas y 0.4 m entre surcos. Las variables analizadas fueron: número; eficiencia y peso seco de nódulos por planta, peso seco de área foliar y rendimiento. Los datos se procesaron usando análisis de varianza (AHUEVA) y se utilizó la prueba de rangos múltiples de DUNCAN (P ≤ 0. 05). No se observó diferencias significativas para las variables de nodulación y rendimiento, determinándose efecto significativo sólo para el peso seco de área foliar en la I y II etapa de evaluación Sin embargo, se determinó quo la cepa CR-436 fue la que presentó mayor infectividad en el sistema radicular y la cepa CIAT-899, la que presentó el mejor porcentaje de efectividad nodular y con la que se obtuvo el mayor promedio de peso seco de área foliar. El mejor rendimiento fue obtenido con la cepa CR-436.

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The influence of each of the six different types of morphological imperfection - waviness, non-uniform cell wall thickness, cell-size variations, fractured cell walls, cell-wall misalignments, and missing cells - on the yielding of 2D cellular solids has been studied systematically for biaxial loading. Emphasis is placed on quantifying the knock-down effect of these defects on the hydrostatic yield strength and upon understanding the associated deformation mechanisms. The simulations in the present study indicate that the high hydrostatic strength, characteristic of ideal honeycombs, is reduced to a level comparable with the deviatoric strength by several types of defect. The common source of this large knock-down is a switch in deformation mode from cell wall stretching to cell wall bending under hydrostatic loading. Fractured cell edges produce the largest knock-down effect on the yield strength of 2D foams, followed in order by missing cells, wavy cell edges, cell edge misalignments, Γ Voronoi cells, δ Voronoi cells, and non-uniform wall thickness. A simple elliptical yield function with two adjustable material parameters successfully fits the numerically predicted yield surfaces for the imperfect 2D foams, and shows potential as a phenomenological constitutive law to guide the design of structural components made from metallic foams.

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Hydrogen rearrangements at the H*2 complex are used as a model of low energy, local transitions in the two-hydrogen density of states of hydrogenated amorphous silicon (a-Si:H). These are used to account for the low activation energy motion of H observed by nuclear magnetic resonance, the low energy defect annealing of defects formed by bias stress in thin film transistors, and the elimination of hydrogen from the growth zone during the low temperature plasma deposition of a-Si:H. © 1998 Elsevier Science B.V. All rights reserved.

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Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.

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Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied mechanics. Most crystal growth processes involve fluid flows, such as flows in the melt, solution or vapor. Theoretical modeling has played an important role in developing technologies used for growing semiconductor crystals for high performance electronic and optoelectronic devices. The application of devices requires large diameter crystals with a high degree of crystallographic perfection, low defect density and uniform dopant distribution. In this article, the flow models developed in modeling of the crystal growth processes such as Czochralski, ammonothermal and physical vapor transport methods are reviewed. In the Czochralski growth modeling, the flow models for thermocapillary flow, turbulent flow and MHD flow have been developed. In the ammonothermal growth modeling, the buoyancy and porous media flow models have been developed based on a single-domain and continuum approach for the composite fluid-porous layer systems. In the physical vapor transport growth modeling, the Stefan flow model has been proposed based on the flow-kinetics theory for the vapor growth. In addition, perspectives for future studies on crystal growth modeling are proposed. (c) 2008 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

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In situ compressive tests on specially designed small samples made from brittle metallic foams were accomplished in a loading device equipped in the scanning electron microscopy (SEM). Each of the small samples comprises only several cells in the effective test zone (ETZ), with one major cell in the middle. In such a system one can not only obtain sequential collapse-process images of a single cell and its cell walls with high resolution, but also correlate the detailed failure behaviour of the cell walls with the stress-strain response, therefore reveal the mechanisms of energy absorption in the mesoscopic scale. Meanwhile, the stress-strain behaviour is quite different from that of bulk foams in dimensions of enough large, indicating a strong size effect. According to the in situ observations, four failure modes in the cell-wall level were summarized, and these modes account for the mesoscopic mechanisms of energy absorption. Paralleled compression tests on bulk samples were also carried out, and it is found that both fracturing of a single cell and developing of fracture bands are defect-directed or weakness-directed processes. The mechanical properties of the brittle aluminum foams obtained from the present tests agree well with the size effect model for ductile cellular solids proposed by Onck et al. (C) 2008 Elsevier Ltd. All rights reserved.

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Nanostructured ZnO materials are of great significance for their potential applications in photoelectronic devices, light-emitting displays, catalysis and gas sensors. In this paper, we report a new method to produce large area periodical bowl-like micropatterns of single crystal ZnO through aqueous-phase epitaxial growth on a ZnO single crystal substrate. A self-assembled monolayer of polystyrene microspheres was used as a template to confine the epitaxial growth of single crystal ZnO from the substrate, while the growth morphology was well controlled by citrate anions. Moreover, it was found that the self-assembled monolayer of colloidal spheres plays an important role in reduction of the defect density in the epitaxial ZnO layer. Though the mechanism is still open for further investigation, the present result indicates a new route to suppress the dislocations in the fabrication of single crystal ZnO film. A predicable application of this new method is for the fabrication of two-dimensional photonic crystal structures on light emitting diode surfaces.

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Using molecular dynamics simulations, we show that the mechanical deformation behaviors of single-crystalline nickel nanowires are quite different from their bulk counterparts. Correlation between the obtained stress-strain curves and the visualized defect evolution during deformation processes clearly demonstrates that a sequence of complex dislocation slip events results in a state of dislocation starvation, involving the nucleation and propagation of dislocations until they finally escape from the wires, so that the wires deform elastically until new dislocations are generated. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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利用热弹性理论分析了在光学材料中由于缺陷吸收激光能量引起的温度和热应力分布,并且针对一个简单的裂纹模型分析了热应力产生的应力强度因子,给出了一些主要参数对于应力强度因子的影响的规律。

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This paper presents a model designed to study vertical interactions between wheel and rail when the wheel moves over a rail welding. The model focuses on the spatial domain, and is drawn up in a simple fashion from track receptances. The paper obtains the receptances from a full track model in the frequency domain already developed by the authors, which includes deformation of the rail section and propagation of bending, elongation and torsional waves along an infinite track. Transformation between domains was secured by applying a modified rational fraction polynomials method. This obtains a track model with very few degrees of freedom, and thus with minimum time consumption for integration, with a good match to the original model over a sufficiently broad range of frequencies. Wheel-rail interaction is modelled on a non-linear Hertzian spring, and consideration is given to parametric excitation caused by the wheel moving over a sleeper, since this is a moving wheel model and not a moving irregularity model. The model is used to study the dynamic loads and displacements emerging at the wheel-rail contact passing over a welding defect at different speeds.

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DNS of spatiotemporal evolution of a wake-type flow is performed. In the incoming flow, a local spanwise nonuniformity in momentum defect is initially imposed. Results show that the spanwise nonuniformity leads to a series of symmetric twist vortex dislocation in downstream of the flow. Vortex line variations and substantial transition of vorticity from spanwise to the streamwise and vertical directions clearly feature the generation of a vortex dislocation and the real vortex linking in the dislocation. Dynamical process and the mechanism responsible for the vortex dislocation are described.

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Large size bulk silicon carbide (SiC) crystals are commonly grown by the physical vapor transport (PVT) method. The PVT growth of SiC crystals involves sublimation and condensation, chemical reactions, stoichiometry, mass transport, induced thermal stress, as well as defect and micropipes generation and propagation. The quality and polytype of as-grown SiC crystals are related to the temperature distribution inside the growth chamber during the growth process, it is critical to predict the temperature distribution from the measured temperatures outside the crucible by pyrometers. A radio-frequency induction-heating furnace was used for the growth of large-size SiC crystals by the PVT method in the present study. Modeling and simulation have been used to develop the SiC growth process and to improve the SiC crystal quality. Parameters such as the temperature measured at the top of crucible, temperature measured at the bottom of the crucible, and inert gas pressure are used to control the SiC growth process. By measuring the temperatures at the top and bottom of the crucible, the temperatures inside the crucible were predicted with the help of modeling tool. SiC crystals of 6H polytype were obtained and characterized by the Raman scattering spectroscopy and SEM, and crystals of few millimeter size grown inside the crucible were found without micropipes. Expansion of the crystals were also performed with the help of modeling and simulation.

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In this paper, common criterions about residual strength evaluation at home and abroad are generalized and seven methods are acquired, namely ASME-B31G, DM, Wes-2805-97, CVDA-84, Burdekin, Irwin and J integral methods. BP neural network are Combined with Genetic Algorithm (GA) named by modified BP-GA methods to successfully predict residual strength and critical pressure of injecting water, corrosion pipelines. Examples are shown that calculation results of every kind of method have great difference and calculating values of Wes-2805-97 criterion, ASME-B31G criterion, CVDA-84 criterion and Irwin fracture mechanics model are conservative and higher than, those of J integral methods while calculating values of Burdiken model and DM fracture mechanics model are dangerous and less than those of J integral methods and calculating values of modified BP-GA methods are close and moderate to those of J integral methods. Therefore modified BP-GA methods and J integral methods are considered better methods to calculate residual strength and critical pressure of injecting water corrosion pipelines

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Czochralski (CZ) crystal growth process is a widely used technique in manufacturing of silicon crystals and other semiconductor materials. The ultimate goal of the IC industry is to have the highest quality substrates, which are free of point defect, impurities and micro defect clusters. The scale up of silicon wafer size from 200 mm to 300 mm requires large crucible size and more heat power. Transport phenomena in crystal growth processes are quite complex due to melt and gas flows that may be oscillatory and/or turbulent, coupled convection and radiation, impurities and dopant distributions, unsteady kinetics of the growth process, melt crystal interface dynamics, free surface and meniscus, stoichiometry in the case of compound materials. A global model has been developed to simulate the temperature distribution and melt flow in an 8-inch system. The present program features the fluid convection, magnetohydrodynamics, and radiation models. A multi-zone method is used to divide the Cz system into different zones, e.g., the melt, the crystal and the hot zone. For calculation of temperature distribution, the whole system inside the stainless chamber is considered. For the convective flow, only the melt is considered. The widely used zonal method divides the surface of the radiation enclosure into a number of zones, which has a uniform distribution of temperature, radiative properties and composition. The integro-differential equations for the radiative heat transfer are solved using the matrix inversion technique. The zonal method for radiative heat transfer is used in the growth chamber, which is confined by crystal surface, melt surface, heat shield, and pull chamber. Free surface and crystal/melt interface are tracked using adaptive grid generation. The competition between the thermocapillary convection induced by non-uniform temperature distributions on the free surface and the forced convection by the rotation of the crystal determines the interface shape, dopant distribution, and striation pattern. The temperature gradients on the free surface are influenced by the effects of the thermocapillary force on the free surface and the rotation of the crystal and the crucible.