838 resultados para Wide gap semiconductor
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Properties of localized states on array of BEC confined to a potential, representing superposition of linear and nonlinear optical lattices are investigated. For a shallow lattice case the coupled mode system has been derived. We revealed new types of gap solitons and studied their stability. For the first time a moving soliton solution has been found. Analytical predictions are confirmed by numerical simulations of the Gross-Pitaevskii equation with jointly acting linear and nonlinear periodic potentials. (c) 2007 Elsevier B.V. All rights reserved.
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Within the framework of the mean-field hydrodynamic model of a degenerate Fermi gas ( DFG), we study, by means of numerical methods and variational approximation ( VA), the formation of fundamental gap solitons ( FGSs) in a DFG ( or in a BCS superfluid generated by weak interaction between spin- up and spin- down fermions), which is trapped in a periodic optical- lattice ( OL) potential. An effectively one- dimensional ( 1D) con. guration is considered, assuming strong transverse confinement; in parallel, a proper 1D model of the DFG ( which amounts to the known quintic equation for the Tonks- Girardeau gas in the OL) is considered too. The FGSs found in the first two bandgaps of the OL- induced spectrum ( unless they are very close to edges of the gaps) feature a ( tightly bound) shape, being essentially confined to a single cell of the OL. In the second bandgap, we also find antisymmetric tightly bound subfundamental solitons ( SFSs), with zero at the midpoint. The SFSs are also confined to a single cell of the OL, but, unlike the FGSs, they are unstable. The predicted solitons, consisting of similar to 10(4) - 10(5) atoms, can be created by available experimental techniques in the DFG of Li-6 atoms.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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We consider a dynamical model of a superfluid Fermi gas in the Bardeen-Cooper-Schrieffer regime trapped in a periodic optical lattice (OL) potential. The model is based on an equation for complex order parameter phi of the superfluid, which is derived from the relevant energy density and includes a self-repulsive term similar to phi(7/3). By means of the variational approximation (VA) and numerical simulations, we find families of stable one- and two-dimensional (I D and 2D) gap solitons (GSs) in this model. Chiefly, they are compact objects trapped in a single cell of the OL. Families of stable even and odd bound states of these GSs are also found in one dimension. A 3D GS family is constructed too, but solely within the framework of the VA. In the linear limit, the VA predicts an almost exact position of the left edge of the first band-gap in the OL-induced spectrum. The full VA provides an accurate description of families of I D and 2D fundamental GSs. We also demonstrate that a I D GS can be safely transported by an OL moving at a moderate velocity. (C) 2009 IMACS. Published by Elsevier B.V. All rights reserved.
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Using the variational approximation and numerical simulations, we study one-dimensional gap solitons in a binary Bose-Einstein condensate trapped in an optical-lattice potential. We consider the case of interspecies repulsion, while the intraspecies interaction may be either repulsive or attractive. Several types of gap solitons are found: symmetric or asymmetric; unsplit or split, if centers of the components coincide or separate; intragap (with both chemical potentials falling into a single band gap) or intergap, otherwise. In the case of the intraspecies attraction, a smooth transition takes place between solitons in the semi-infinite gap, those in the first finite band gap, and semigap solitons (with one component in a band gap and the other in the semi-infinite gap).
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The relationship between grain-boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO2 center dot COO binary polycrystalline system has been investigated by means of combined techniques such as I-V characteristic response, complex impedance and capacitance analysis and electrostatic force microscopy. The estimated role of the Nb doping is to increase the concentration of shallow donors that are capable of enhancing the electronic donation to grain-boundary acceptors. This effect leads to the formation of potential barriers at grain boundaries with a simultaneous increase of grain-boundary capacitance and non-Ohmic features of the polycrystalline device doped with Nb atoms.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Na Floresta Pluvial Atlântica Montana do Sudeste Brasileiro, foi realizado um estudo para descrever e avaliar a colonização de clareiras. A composição de clareiras foi levantada através da cobertura do solo para as espécies herbáceas enquanto que todos os indivíduos lenhosos maiores que um metro de altura foram mensurados e identificados. Também foram coletadas informações sobre a estrutura das clareiras (área da clareira, número e diâmetro das quedas), posição topográfica e vegetação circundante. Dois gêneros de Marantaceae apresentaram considerável freqüência e abundância nas clareiras. As espécies lenhosas mais freqüentes e abundantes pertenceram ao grupo não-pioneiro e as famílias mais ricas encontradas nas clareiras não diferiram quando comparado à floresta como um todo. Como para as variáveis do estrato herbáceo e da vegetação circundante, os resultados revelaram que efeitos diretos e indiretos da topografia são importantes na determinação da composição interna de clareiras por espécies lenhosas. Estes resultados sugerem que a colonização de clareiras é influenciada não apenas pelas variáveis de estrutura, mas também pela posição topográfica e pelos indivíduos pré-estabelecidos.