Controllo ultra-low power di un modulatore back-scattering per applicazioni di localizzazione in sistemi RFID

In questa tesi viene elaborata un'applicazione ultra-low power (ULP) basata su microcontrollore, per implementare la procedura di controllo di diversi circuiti di un tag RFID. Il tag preso in considerazione è pensato per lavorare in assenza di batteria, da cui la necessita' di ridurre i consumi di potenza. La sua attivazione deve essere inoltre comandata attraverso un'architettura Wake up Radio (WuR), in cui un segnale di controllo radio indirizza e attiva il circuito. Nello specifico, la rete di decodifica dell'indirizzo è stata realizzata mediante il modulo di comunicazione seriale del microcontrollore. Nel Capitolo 1 verrà introdotto il tema dell'Energy Harvesting. Nel Capitolo 2 verrà illustrata l'architettura del sistema nel suo complesso. Nel Capitolo 3 verrà spiegato dettagliatamente il funzionamento del microcontrollore scelto. Il Capitolo 4 sarà dedicato al firmware implementato per svolgere le operazioni fondamentali imputate al micro per i compiti di controllo. Verrà inoltre introdotto il codice VHDL sviluppato per emulare l'output del modulo WuR mediante un FPGA della famiglia Cyclone II. Nel Capitolo 5 verrà presentata una stima dei consumi del microcontrollore in funzione dei parametri di configurazione del sistema. Verrà inoltre effettuato un confronto con un altro microcontrollore che in alcune condizioni potrebbe rappresentare iun'alternativa valida di progetto. Nei Capitoli 6 e 7 saranno descritti possibili sviluppi futuri e conclusioni del progetto. Le specifiche di progetto rilevanti della tesi sono: 1. minimo consumo energetico possibile del microcontrollore ULP 2. elevata rapidità di risposta per la ricezione dei tag, per garantire la ricezione di un numero maggiore possibile di indirizzi (almeno 20 letture al secondo), in un range di tempo limitato 3. generazione di un segnale PWM a 100KHz di frequenza di commutazione con duty cycle 50% su cui basare una modulazione in back-scattering.

Application of Inelastic Neutron Scattering to the Methanol-to-Gasoline Reaction Over a ZSM-5 Catalyst

Peer reviewed

Seismic scattering and absorption mapping of debris flows, feeding paths, and tectonic units at Mount St. Helens volcano

Acknowledgments We thank Edoardo Del Pezzo, Ludovic Margerin, Haruo Sato, Mare Yamamoto, Tatsuhiko Saito, Malcolm Hole, and Seth Moran for the valuable suggestions regarding the methodology and interpretation. Greg Waite provided the P wave velocity model of MSH. An important revision of the methods was done after two blind reviews performed before submission. The suggestions of two anonymous reviewers greatly enhanced our ability of imaging structures, interpreting our results, and testing their reliability. The facilities of the IRIS Data Management System, and specifically the IRIS Data Management Center, were used for access to waveform and metadata required in this study, and provided by the Cascades Volcano Observatory – USGS. Interaction with geologists and geographers part of the Landscape Dynamics Theme of the Scottish Alliance for Geoscience, Environment and Society (SAGES) has been important for the interpretation of the results.

Revival resonant scattering, perfect caustics and isotropic transport of pseudospin-1 particles

This work was supported by ONR under Grant No. N00014-16-1-2828.

CW lasing in a telecom fibre due to the random distributed feedback via Rayleigh scattering

We demonstrate a fibre laser with a mirrorless cavity that operates via Rayleigh scattering amplified through the Raman effect. The properties of such random distributed feedback laser appear different from those of both traditional random lasers and conventional fibre lasers. ©2010 IEEE.

Multi-wavelength ultra-long Raman fibre laser based on Rayleigh-scattering feedback

We experimentally demonstrate a Raman fiber laser with linear cavity based on point-action fibre Bragg grating reflectors and random distributed feedback via Rayleigh scattering in the long fibre providing stable multiple wavelengths (close to ITU grid) output at Watts level. ©2010 IEEE.

Impact of scatterer density on the performances of double-scattering MIMO channels

We investigate a MIMO double-scattering model with both local and remote scatterers, aiming to investigate the effect of scatterer density on channel performances, such as capacity, correlation, and the condition number of the channel matrix in flat and frequency-selective fading channels. The investigations are carried out in terms of scatterer density. It is shown that in flat fading channels the scatterer density has a marginal effect on channel performances when the area of the two scatterer zones is fixed, while a significant impact is observed when the area of the scatterer zones is allowed to change. In frequency-selective fading channels, no matter the area of the scatterer zones is fixed or not, scatterer density can affect the channel capacity to a certain degree that depends on the length of the coding block of the transmitted signals. © 2010 IEEE.

First-principles investigation of the alloy scattering potential in dilute Si1-xCx

A first-principles method is applied to find the intra and intervalley n-type carrier scattering rates for substitutional carbon in silicon. The method builds on a previously developed first-principles approach with the introduction of an interpolation technique to determine the intravalley scattering rates. Intravalley scattering is found to be the dominant alloy scattering process in Si1-xCx, followed by g-type intervalley scattering. Mobility calculations show that alloy scattering due to substitutional C alone cannot account for the experimentally observed degradation of the mobility. We show that the incorporation of additional charged impurity scattering due to electrically active interstitial C complexes models this residual resistivity well.

First principles calculation of electron-phonon and alloy scattering in strained SiGe

First-principles electronic structure methods are used to predict the mobility of n-type carrier scattering in strained SiGe. We consider the effects of strain on the electron-phonon deformation potentials and the alloy scattering parameters. We calculate the electron-phonon matrix elements and fit them up to second order in strain. We find, as expected, that the main effect of strain on mobility comes from the breaking of the degeneracy of the six Δ and L valleys, and the choice of transport direction. The non-linear effects on the electron-phonon coupling of the Δ valley due to shear strain are found to reduce the mobility of Si-like SiGe by 50% per % strain. We find increases in mobility between 2 and 11 times that of unstrained SiGe for certain fixed Ge compositions, which should enhance the thermoelectric figure of merit in the same order, and could be important for piezoresistive applications.

First-principles calculation of carrier-phonon scattering in n-type Si1−xGex alloys

First-principles electronic structure methods are used to find the rates of inelastic intravalley and intervalley n-type carrier scattering in Si1-xGex alloys. Scattering parameters for all relevant Delta and L intra- and intervalley scattering are calculated. The short-wavelength acoustic and the optical phonon modes in the alloy are computed using the random mass approximation, with interatomic forces calculated in the virtual crystal approximation using density functional perturbation theory. Optical phonon and intervalley scattering matrix elements are calculated from these modes of the disordered alloy. It is found that alloy disorder has only a small effect on the overall inelastic intervalley scattering rate at room temperature. Intravalley acoustic scattering rates are calculated within the deformation potential approximation. The acoustic deformation potentials are found directly and the range of validity of the deformation potential approximation verified in long-wavelength frozen phonon calculations. Details of the calculation of elastic alloy scattering rates presented in an earlier paper are also given. Elastic alloy disorder scattering is found to dominate over inelastic scattering, except for almost pure silicon (x approximate to 0) or almost pure germanium (x approximate to 1), where acoustic phonon scattering is predominant. The n-type carrier mobility, calculated from the total (elastic plus inelastic) scattering rate, using the Boltzmann transport equation in the relaxation time approximation, is in excellent agreement with experiments on bulk, unstrained alloys..

First-principles calculation of P-type alloy scattering in Si1-xGex

The p-type carrier scattering rate due to alloy disorder in Si1-xGex alloys is obtained from first principles. The required alloy scattering matrix elements are calculated from the energy splitting of the valence bands, which arise when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Alloy scattering within the valence bands is found to be characterized by a single scattering parameter. The hole mobility is calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation. The results are in good agreement with experiments on bulk, unstrained alloys..

First-principles calculation of alloy scattering in GexSi1-x

First-principles electronic structure methods are used to find the rates of intravalley and intervalley n-type carrier scattering due to alloy disorder in Si1-xGex alloys. The required alloy scattering matrix elements are calculated from the energy splitting of nearly degenerate Bloch states which arises when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Scattering parameters for all relevant Delta and L intravalley and intervalley alloy scattering are calculated. Atomic relaxation is found to have a substantial effect on the scattering parameters. f-type intervalley scattering between Delta valleys is found to be comparable to other scattering channels. The n-type carrier mobility, calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation, is in excellent agreement with experiments on bulk, unstrained alloys.

TILTED COLUMNAR THIN FILM COATINGS WITH ANISOTROPIC LIGHT SCATTERING PROPERTIES FOR SOLAR ENERGY APPLICATIONS

The main goal of this thesis is to show the versatility of glancing angle deposition (GLAD) thin films in applications. This research is first focused on studying the effect of select deposition variables in GLAD thin films and secondly, to demonstrate the flexibility of GLAD films to be incorporated in two different applications: (1) as a reflective coating in low-level concentration photovoltaic systems, and (2) as an anode structure in dye-sensitized solar cells (DSSC). A particular type of microstructure composed of tilted micro-columns of titanium is fabricated by GLAD. The microstructures form elongated and fan-like tilted micro-columns that demonstrate anisotropic scattering. The thin films texture changes from fiber texture to tilted fiber texture by increasing the vapor incidence angle. At very large deposition angles, biaxial texture forms. The morphology of the thin films deposited under extreme shadowing condition and at high temperature (below recrystallization zone) shows a porous and inclined micro-columnar morphology, resulting from the dominance of shadowing over adatom surface diffusion. The anisotropic scattering behavior of the tilted Ti thin film coatings is quantified by bidirectional reflectance distribution function (BRDF) measurements and is found to be consistent with reflectance from the microstructure acting as an array of inclined micro-mirrors that redirect the incident light in a non-specular reflection. A silver-coating of the surface of the tilted-Ti micro-columns is performed to enhance the total reflectance of the Ti-thin films while keeping the anisotropic scattering behavior. By using such coating is as a booster reflector in a laboratory-scale low-level concentration photovoltaic system, the short-circuit current of the reference silicon solar cell by 25%. Finally, based on the scattering properties of the tilted microcolumnar microstructure, its scattering effect is studied as a part of titanium dioxide microstructure for the anode in DSSCs. GLAD-fabricated TiO2 microstructures for the anode in a DSSC, consisting of vertical micro-columns, and combined vertical topped with tilted micro-columns are compared. The solar cell with the two-part microstructure shows the highest monochromatic incident photon to current efficiency with 20% improvement compared to the vertical microstructure, and the efficiency of the cell increases from 1.5% to 2% due to employing the scattering layer.