Effets des recuits ultra-rapides (10^5 K/s) sur la formation des siliciures métalliques en phase solide

La synthèse de siliciures métalliques sous la forme de films ultra-minces demeure un enjeu majeur en technologie CMOS. Le contrôle du budget thermique, afin de limiter la diffusion des dopants, est essentiel. Des techniques de recuit ultra-rapide sont alors couramment utilisées. Dans ce contexte, la technique de nanocalorimétrie est employée afin d'étudier, in situ, la formation en phase solide des siliciures de Ni à des taux de chauffage aussi élevés que 10^5 K/s. Des films de Ni, compris entre 9.3 et 0.3 nm sont déposés sur des calorimètres avec un substrat de a-Si ou de Si(100). Des mesures de diffraction de rayons X, balayées en température à 3 K/s, permettent de comparer les séquences de phase obtenues à bas taux de chauffage sur des échantillons de contrôle et à ultra-haut taux de chauffage sur les calorimètres. En premier lieu, il est apparu que l'emploi de calorimètres de type c-NC, munis d'une couche de 340 nm de Si(100), présente un défi majeur : un signal endothermique anormal vient fausser la mesure à haute température. Des micro-défauts au sein de la membrane de SiNx créent des courts-circuits entre la bande chauffante de Pt du calorimètre et l'échantillon métallique. Ce phénomène diminue avec l'épaisseur de l'échantillon et n'a pas d'effet en dessous de 400 °C tant que les porteurs de charge intrinsèques au Si ne sont pas activés. Il est possible de corriger la mesure de taux de chaleur en fonction de la température avec une incertitude de 12 °C. En ce qui a trait à la formation des siliciures de Ni à ultra-haut taux de chauffage, l'étude montre que la séquence de phase est modifiée. Les phases riches en m étal, Ni2Si et théta, ne sont pas détectées sur Si(100) et la cinétique de formation favorise une amorphisation en phase solide en début de réaction. Les enthalpies de formation pour les couches de Ni inférieures à 10 nm sont globalement plus élevées que dans le cas volumique, jusqu' à 66 %. De plus, les mesures calorimétriques montrent clairement un signal endothermique à haute température, témoignant de la compétition que se livrent la réaction de phase et l'agglomération de la couche. Pour les échantillons recuits a 3 K/s sur Si(100), une épaisseur critique telle que décrite par Zhang et Luo, et proche de 4 nm de Ni, est supposée. Un modèle est proposé, basé sur la difficulté de diffusion des composants entre des grains de plus en plus petits, afin d'expliquer la stabilité accrue des couches de plus en plus fines. Cette stabilité est également observée par nanocalorimétrie à travers le signal endothermique. Ce dernier se décale vers les hautes températures quand l'épaisseur du film diminue. En outre, une 2e épaisseur critique, d'environ 1 nm de Ni, est remarquée. En dessous, une seule phase semble se former au-dessus de 400 °C, supposément du NiSi2.

(1−x)MgAl2O4-xTiO2 dielectrics for microwave and millimeter wave applications

The MgAl2O4 ceramics were prepared by the conventional solid-state ceramic route and the dielectric properties studied in the microwave frequency region (3–13 GHz). The phase purity and crystal structure were identified using the X-ray diffraction technique. The MgAl2O4 spinel ceramics show interesting microwave dielectric properties (εr = 8.75, Qux f = 68 900 GHz (loss tangent = 0.00017 at 12.3 GHz), τf =−75 ppm/◦C). The MgAl2O4 has high negative τf, which precludes its immediate use in practical applications. Hence the microwave dielectric properties of MgAl2O4 spinels were tailored by adding different mole fractions of TiO2. The εr and Q factor of the mixed phases were increased with the molar addition of TiO2 into the spinel to form mixtures based on (1−x)MgAl2O4-xTiO2 (x = 0.0−1.0). For x = 0.25 in (1−x)MgAl2O4-xTiO2, the microwave quality factor reaches a maximum value of Qux f = 105 400 GHz (loss tangent = 0.00007 at 7.5 GHz) where εr and τf are 11.035 and −12 ppm/◦C, respectively. The microwave dielectric properties of the newly developed 0.75MgAl2O4-0.25TiO2 dielectric is superior to several commercially available low loss dielectric substrates.

Design, Fabrication and Characterization of Passive and Active Polymer Photonic Devices

The rapid developments in fields such as fibre optic communication engineering and integrated optical electronics have expanded the interest and have increased the expectations about guided wave optics, in which optical waveguides and optical fibres play a central role. The technology of guided wave photonics now plays a role in generating information (guided-wave sensors) and processing information (spectral analysis, analog-to-digital conversion and other optical communication schemes) in addition to its original application of transmitting information (fibre optic communication). Passive and active polymer devices have generated much research interest recently because of the versatility of the fabrication techniques and the potential applications in two important areas – short distant communication network and special functionality optical devices such as amplifiers, switches and sensors. Polymer optical waveguides and fibres are often designed to have large cores with 10-1000 micrometer diameter to facilitate easy connection and splicing. Large diameter polymer optical fibres being less fragile and vastly easier to work with than glass fibres, are attractive in sensing applications. Sensors using commercial plastic optical fibres are based on ideas already used in silica glass sensors, but exploiting the flexible and cost effective nature of the plastic optical fibre for harsh environments and throw-away sensors. In the field of Photonics, considerable attention is centering on the use of polymer waveguides and fibres, as they have a great potential to create all-optical devices. By attaching organic dyes to the polymer system we can incorporate a variety of optical functions. Organic dye doped polymer waveguides and fibres are potential candidates for solid state gain media. High power and high gain optical amplification in organic dye-doped polymer waveguide amplifier is possible due to extremely large emission cross sections of dyes. Also, an extensive choice of organic dye dopants is possible resulting in amplification covering a wide range in the visible region.

Luminescence from Surfactant-Free ZnO Quantum Dots Prepared by Laser Ablation in Liquid

Highly transparent, luminescent and biocompatible ZnO quantum dots were prepared in water, methanol, and ethanol using liquid-phase pulsed laser ablation technique without using any surfactant. Transmission electron microscopy analysis confirmed the formation of good crystalline ZnO quantum dots with a uniform size distribution of 7 nm. The emission wavelength could be varied by varying the native defect chemistry of ZnO quantum dots and the laser fluence. Highly luminescent nontoxic ZnO quantum dots have exciting application potential as florescent probes in biomedical applications.

Tailoring the microwave dielectric properties of BaRE2Ti4O12 and BaRE2Ti5O14 ceramics bycompositional variations

Ceramic dielectric resonators in the BaO-RE2O3-TiO2 (RE=rare earth) system have been prepared by the conventional solid state ceramic route. The dielectric properties have been tailored by substitution of different rare earth oxides and by bismuth oxide addition. The dielectric constants increased with Bi addition whereas the Q decreased. The temperature coeffecient of the resonant frequency improved with bismuth addition.

Preparation and Microwave Characterisation of Ba2-xSrx Ti9 O20 Cermics

Ceramics of composition BaO-Ln2O3-STiO2 have been prepared with four elements (Ln=La,Pr,Nd.Sm) by a conventional solid state ceramic preparation route and the dielectric properties measured in the microwave frequency range

Preparation, Characterization and Dilectric Properties of Ceramics in the BaO-Nd2O3-TiO2 System

The dielectric ceramics BaNd2Ti3Oto, BaNd2Ti4O12 and BaNd2Ti5O14 have been prepared by Conventional solid state ceramic route. The sintered ceramic samples have been characterized by X-ray diffraction and Scanning Electron Microscopy (SEM). The dielectric properties in the microwave frequency range have been measured using conventional microwave dielectric resonator methods. The BaNd2Ti1O10, BaN2Ti4O12 and BaNd2Ti5O14 have dielectric constants (Er) ~ 60, 84 and 77 respectively. They have relatively high quality factors

Tailoring the Microwave Dielectric Properties of BaRE2Ti4012 and BaRE2Ti5014 Ceramics by Compositional Variations

Ceramic dielectric resonators in the BaO-RE2O3-TiO2 (RE = rare earth) system have been prepared by the conventional solid state ceramic route. The dielectric properties have been tailored by substitution of different rare earth oxides and by bismuth oxide addition. The dielectric constants increased with Bi addition whereas the 0 decreased. The temperature coefficient of the resonant frequency improved with bismuth addition

Microwave Characterisation of BaCe2Ti5O15 and Ba5Nb4O15 Ceramic Dielectric Resonators Using Whispering Gallery Mode Method

A microwave dielectric ceramic resonator based on BaCe2Ti5O15 and Ba5Nb4O15 have been prepared by conventional solid state ceramic route. The dielectric resonators (DRs) have high dielectric constant 32 and 40 for BaCe2Ti5O15 and Ba5Nb4O15, respectively. The whispering gallery mode (WGM) technique was employed for the accurate determination of the dielectric properties in the microwave frequency range. The BaCe2Ti5O15 and Ba5Nb4O15 have quality factors (Q X F) of 30,600 and 53,000 respectively. The quality factor is found to depend on the azimuthal mode numbers. The temperature coefficient of resonant frequency (Tr) of BaCe2Ti5O15 and Ba5Nb4O15 have been measured accurately using different resonant modes and are + 41 and + 78 ppm/K, respectively

Preparation, Characterization, and Microwave Properties of RETiNbO6 (RE = Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Y, and Yb) Dielectric Ceramics

Microwave ceramic dielectric resonators (DRs) based on RETiNbO6 (RE = Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Y, and Yb) have been prepared using the conventional solid -state ceramic route. The DR samples are characterized using XRD and SEM methods. The microwave dielectric properties are measured using resonant methods and a net work analyzer . The ceramics based on Ce, Pr, Nd, and Sin have dielectric constants in the range 32-54 and positive coefficient of thermal variation of resonant frequency (r,). The ceramics based on Gd, Tb, Dy, Y. and Yb have dielectric constants in the range 19-22 and negative Tf

Synthesis,Characterization and Properties of [REI_xREX]TiNb06 Dielectric Ceramics

Dielectric ceramics based on solid solution phases of [RE1_x= REr]TiNb06, where REI_s = Nd, Pr, Sm and RE' = Dy, Gd and Y, were prepared by the conventional solid-state ceramic route for values of x. The ceramic samples are characterized by X-ray diffraction and microwave methods. Ceramics based on RE (Pr, Nd and Sm) belonging to aeschynite group shows positive value of Tf and those based on RE (Gd, Dy and Y) belonging to euxenite group show negative value of r f. The solid solution phases between the aeschynite and the euxenite group shows intermediate dielectric constant and r f values. The results indicate the possibility of tailoring the dielectric properties by varying the composition of the solid solution phases. The range of solid solubility of euxenite in aeschenite and aeschenite in euxenite are different for different rare earth ions