Bessel beams from semiconductor light sources

We report on recent progress in the generation of non-diffracting (Bessel) beams from semiconductor light sources including both edge-emitting and surface-emitting semiconductor lasers as well as light-emitting diodes (LEDs). Bessel beams at the power level of Watts with central lobe diameters of a few to tens of micrometers were achieved from compact and highly efficient lasers. The practicality of reducing the central lobe size of the Bessel beam generated with high-power broad-stripe semiconductor lasers and LEDs to a level unachievable by means of traditional focusing has been demonstrated. We also discuss an approach to exceed the limit of power density for the focusing of radiation with high beam propagation parameter M2. Finally, we consider the potential of the semiconductor lasers for applications in optical trapping/tweezing and the perspectives to replace their gas and solid-state laser counterparts for a range of implementations in optical manipulation towards lab-on-chip configurations. © 2014 Elsevier Ltd.

Structure of dysprosium and holmium phosphate glasses by the method of isomorphic substitution in neutron diffraction

The relative distribution of rare-earth ions R3+ (Dy3+ or Ho3+) in the phosphate glass RAl0.30P3.05O9.62 was measured by employing the method of isomorphic substitution in neutron diffraction and, by taking the role of Al into explicit account, a self-consistent model of the glass structure was developed. The glass network is found to be made from corner sharing PO4 tetrahedra in which there are, on average, 2.32(9) terminal oxygen atoms, OT, at 1.50(1) Å and 1.68(9) bridging oxygen atoms, OB, at 1.60(1) Å. The network modifying R3+ ions bind to an average of 6.7(1) OT and are distributed such that 7.9(7) R–R nearest neighbours reside at 5.62(6) Å. The Al3+ ion also has a network modifying role in which it helps to strengthen the glass through the formation of OT–Al–OT linkages. The connectivity of the R-centred coordination polyhedra in (M2O3)x(P2O5)1−x glasses, where M3+ denotes a network modifying cation (R3+ or Al3+), is quantified in terms of a parameter fs. Methods for reducing the clustering of rare-earth ions in these materials are then discussed, based on a reduction of fs via the replacement of R3+ by Al3+ at fixed total modifier content or via a change of x to increase the number of OT available per network modifying M3+ cation.

Structure of lanthanum and cerium phosphate glasses by the method of isomorphic substitution in neutron diffraction

Neutron diffraction was used to measure the total structure factors for several rare-earth ion R3+ (La3+ or Ce3+) phosphate glasses with composition close to RAl0.35P3.24O10.12. By assuming isomorphic structures, difference function methods were employed to separate, essentially, those correlations involving R3+ from the remainder. A self-consistent model of the glass structure was thereby developed in which the Al correlations were taken into explicit account. The glass network was found to be made from interlinked PO4 tetrahedra having 2.2(1) terminal oxygen atoms, OT, at 1.51(1) Angstrom, and 1.8(1) bridging oxygen atoms, OB, at 1.60(1) Angstrom. Rare-earth cations bonded to an average of 7.5(2) OT nearest neighbors in a broad and asymmetric distribution. The Al3+ ion acted as a network modifier and formed OT-A1-OT linkages that helped strengthen the glass. The connectivity of the R-centered coordination polyhedra was quantified in terms of a parameter f(s) and used to develop a model for the dependence on composition of the A1-OT coordination number in R-A1-P-O glasses. By using recent 17 A1 nuclear-magnetic-resonance data, it was shown that this connectivity decreases monotonically with increasing Al content. The chemical durability of the glasses appeared to be at a maximum when the connectivity of the R-centered coordination polyhedra was at a minimum. The relation of f(s) to the glass transition temperature, Tg, was discussed.

Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

A diode-cladding-pumped mid-infrared passively Q-switched Ho3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 μ J with a pulse width of 1.68 μ s and signal-to-noise ratio (SNR) of ∼50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 μ m. To the best of our knowledge, this is the first 3 μ m region SESAM-based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers. © 2014 Astro Ltd.

Mode locking of semiconductor laser with curved waveguide and passive mode expander

Active mode locking is reported for a 1.55 μm semiconductor laser with a curved waveguide and passive mode expander, placed in a wavelength tunable external cavity. One facet with a very low reflectivity of 8×10−6 is achieved through a curved active region that tapers into an underlying passive waveguide, thus expanding the mode to give reduced divergence. 10 GHz pulses of 3.1 ps duration have been generated, with a linewidth of 0.81 nm.

Structure of molten TbCl3 measured by neutron diffraction

The total structure factor of molten TbCl3 at 617ºC was measured by using neutron diffraction. The data are in agreement with results from previous experimental work but the use of a diffractometer having an extended reciprocal-space measurement window leads to improved resolution in real space. Significant discrepancies with the results obtained from recent molecular dynamics simulations carried out using a polarizable ion model, in which the interaction potentials were optimized to enhance agreement with previous diffraction data, are thereby highlighted. It is hence shown that there is considerable scope for the development of this model for TbCl3 and for other trivalent metal halide systems spanning a wide range of ion size ratios.

Semiconductor optical amplifier-based nonlinear optical-loop mirror with feedback

The behavior of a semiconductor optical amplifier (SOA)-based nonlinear loop mirror with feedback has been investigated as a potential device for all-optical signal processing. In the feedback device, input signal pulses (ones) are injected into the loop, and amplified reflected pulses are fed back into the loop as switching pulses. The feedback device has two stable modes of operation - block mode, where alternating blocks of ones and zeros are observed, and spontaneous clock division mode, where halving of the input repetition rate is achieved. Improved models of the feedback device have been developed to study its performance in different operating conditions. The feedback device could be optimized to give a choice of either of the two stable modes by shifting the arrival time of the switching pulses at the SOA. Theoretically, it was found possible to operate the device at only tens of fJ switching pulse energies if the SOA is biased to produce very high gain in the presence of internal loss. The clock division regime arises from the combination of incomplete SOA gain recovery and memory of the startup sequence that is provided by the feedback. Clock division requires a sufficiently high differential phase shift per unit differential gain, which is related to the SOA linewidth enhancement factor.

Travelling-wave model of semiconductor optical amplifier based non-linear loop mirror

A travelling-wave model of a semiconductor optical amplifier based non-linear loop mirror is developed to investigate the importance of travelling-wave effects and gain/phase dynamics in predicting device behaviour. A constant effective carrier recovery lifetime approximation is found to be reasonably accurate (±10%) within a wide range of control pulse energies. Based on this approximation, a heuristic model is developed for maximum computational efficiency. The models are applied to a particular configuration involving feedback.

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

Influence of La-doping on phase transformation and photocatalytic properties of ZnTiO3 nanoparticles synthesized via modified sol-gel method

Non-doped and La-doped ZnTiO3 nanoparticles were successfully synthesized via a modified sol–gel method. The synthesized nanoparticles were structurally characterized by PXRD, UV-vis DRS, FT-IR, SEM-EDS, TEM, Raman and photoluminescence spectroscopy. The results show that doping of La into the framework of ZnTiO3 has a strong influence on the physico-chemical properties of the synthesized nanoparticles. XRD results clearly show that the non-doped ZnTiO3 exhibits a hexagonal phase at 800 °C, whereas the La-doped ZnTiO3 exhibits a cubic phase under similar experimental conditions. In spite of the fact that it has a large ionic radius, the La is efficiently involved in the evolution process by blocking the crystal growth and the cubic to hexagonal transformation in ZnTiO3. Interestingly the absorption edge of the La-doped ZnTiO3 nanoparticles shifted from the UV region to the visible region. The photocatalytic activity of the La-doped ZnTiO3 nanoparticles was evaluated for the degradation of Rhodamine B under sunlight irradiation. The optimum photocatalytic activity was obtained for 2 atom% La-doped ZnTiO3, which is much higher than that of the non-doped ZnTiO3 as well as commercial N-TiO2. A possible mechanism for the degradation of Rhodamine B over La-doped ZnTiO3 was also discussed by trapping experiments. More importantly, the reusability of these nanoparticles is high. Hence La-doped ZnTiO3 nanoparticles can be used as efficient photocatalysts for environmental applications.

The relationship between charge density and polyelectrolyte brush profile using simultaneous neutron reflectivity and in situ attenuated total internal reflection FTIR

We report on a novel experimental study of a pH-responsive polyelectrolyte brush at the silicon/D2O interface. A poly[2-(diethylamino)ethyl methacrylate] brush was grown on a large silicon crystal which acted as both a substrate for a neutron reflectivity solid/liquid experiment but also as an FTIR-ATR spectroscopy crystal. This arrangement has allowed for both neutron reflectivities and FTIR spectroscopic information to be measured in parallel. The chosen polybase brush shows strong IR bands which can be assigned to the N-D+ stretch, D2O, and a carbonyl group. From such FTIR data, we are able to closely monitor the degree of protonation along the polymer chain as well as revealing information concerning the D2O concentration at the interface. The neutron reflectivity data allows us to determine the physical brush profile normal to the solid/liquid interface along with the corresponding degree of hydration. This combined approach makes it possible to quantify the charge on a polymer brush alongside the morphology adopted by the polymer chains. © 2013 American Chemical Society.

Simultaneous demultiplexing, data regeneration, and clock recovery with a single semiconductor optical amplifier-based nonlinear-optical loop mirror

We demonstrate simultaneous demultiplexing, data regeneration and clock recovery at 10Gbits/s, using a single semiconductor optical amplifier–based nonlinear-optical loop mirror in a phase-locked loop configuration.

Bistability and hysteresis in an optically injected two-section semiconductor laser

The effect of coherent single frequency injection on two-section semiconductor lasers is studied numerically using a model based on a set of delay differential equations. The existence of bistability between different continuous-wave and nonstationary regimes of operation is demonstrated in the case of sufficiently large linewidth enhancement factors. © 2014 American Physical Society.