Numerical simulation of interdigitated back contact hetero-junction solar cells

The goal of this thesis is the application of an opto-electronic numerical simulation to heterojunction silicon solar cells featuring an all back contact architecture (Interdigitated Back Contact Hetero-Junction IBC-HJ). The studied structure exhibits both metal contacts, emitter and base, at the back surface of the cell with the objective to reduce the optical losses due to the shadowing by front contact of conventional photovoltaic devices. Overall, IBC-HJ are promising low-cost alternatives to monocrystalline wafer-based solar cells featuring front and back contact schemes, in fact, for IBC-HJ the high concentration doping diffusions are replaced by low-temperature deposition processes of thin amorphous silicon layers. Furthermore, another advantage of IBC solar cells with reference to conventional architectures is the possibility to enable a low-cost assembling of photovoltaic modules, being all contacts on the same side. A preliminary extensive literature survey has been helpful to highlight the specific critical aspects of IBC-HJ solar cells as well as the state-of-the-art of their modeling, processing and performance of practical devices. In order to perform the analysis of IBC-HJ devices, a two-dimensional (2-D) numerical simulation flow has been set up. A commercial device simulator based on finite-difference method to solve numerically the whole set of equations governing the electrical transport in semiconductor materials (Sentuarus Device by Synopsys) has been adopted. The first activity carried out during this work has been the definition of a 2-D geometry corresponding to the simulation domain and the specification of the electrical and optical properties of materials. In order to calculate the main figures of merit of the investigated solar cells, the spatially resolved photon absorption rate map has been calculated by means of an optical simulator. Optical simulations have been performed by using two different methods depending upon the geometrical features of the front interface of the solar cell: the transfer matrix method (TMM) and the raytracing (RT). The first method allows to model light prop-agation by plane waves within one-dimensional spatial domains under the assumption of devices exhibiting stacks of parallel layers with planar interfaces. In addition, TMM is suitable for the simulation of thin multi-layer anti reflection coating layers for the reduction of the amount of reflected light at the front interface. Raytracing is required for three-dimensional optical simulations of upright pyramidal textured surfaces which are widely adopted to significantly reduce the reflection at the front surface. The optical generation profiles are interpolated onto the electrical grid adopted by the device simulator which solves the carriers transport equations coupled with Poisson and continuity equations in a self-consistent way. The main figures of merit are calculated by means of a postprocessing of the output data from device simulation. After the validation of the simulation methodology by means of comparison of the simulation result with literature data, the ultimate efficiency of the IBC-HJ architecture has been calculated. By accounting for all optical losses, IBC-HJ solar cells result in a theoretical maximum efficiency above 23.5% (without texturing at front interface) higher than that of both standard homojunction crystalline silicon (Homogeneous Emitter HE) and front contact heterojuction (Heterojunction with Intrinsic Thin layer HIT) solar cells. However it is clear that the criticalities of this structure are mainly due to the defects density and to the poor carriers transport mobility in the amorphous silicon layers. Lastly, the influence of the most critical geometrical and physical parameters on the main figures of merit have been investigated by applying the numerical simulation tool set-up during the first part of the present thesis. Simulations have highlighted that carrier mobility and defects level in amorphous silicon may lead to a potentially significant reduction of the conversion efficiency.

Finite-element discretization of 3D energy-transport equations for semiconductors

In this thesis a mathematical model was derived that describes the charge and energy transport in semiconductor devices like transistors. Moreover, numerical simulations of these physical processes are performed. In order to accomplish this, methods of theoretical physics, functional analysis, numerical mathematics and computer programming are applied. After an introduction to the status quo of semiconductor device simulation methods and a brief review of historical facts up to now, the attention is shifted to the construction of a model, which serves as the basis of the subsequent derivations in the thesis. Thereby the starting point is an important equation of the theory of dilute gases. From this equation the model equations are derived and specified by means of a series expansion method. This is done in a multi-stage derivation process, which is mainly taken from a scientific paper and which does not constitute the focus of this thesis. In the following phase we specify the mathematical setting and make precise the model assumptions. Thereby we make use of methods of functional analysis. Since the equations we deal with are coupled, we are concerned with a nonstandard problem. In contrary, the theory of scalar elliptic equations is established meanwhile. Subsequently, we are preoccupied with the numerical discretization of the equations. A special finite-element method is used for the discretization. This special approach has to be done in order to make the numerical results appropriate for practical application. By a series of transformations from the discrete model we derive a system of algebraic equations that are eligible for numerical evaluation. Using self-made computer programs we solve the equations to get approximate solutions. These programs are based on new and specialized iteration procedures that are developed and thoroughly tested within the frame of this research work. Due to their importance and their novel status, they are explained and demonstrated in detail. We compare these new iterations with a standard method that is complemented by a feature to fit in the current context. A further innovation is the computation of solutions in three-dimensional domains, which are still rare. Special attention is paid to applicability of the 3D simulation tools. The programs are designed to have justifiable working complexity. The simulation results of some models of contemporary semiconductor devices are shown and detailed comments on the results are given. Eventually, we make a prospect on future development and enhancements of the models and of the algorithms that we used.

Progress in x-ray spectroscopies for the study of advanced materials

This thesis work is focused on the use of selected core-level x-ray spectroscopies to study semiconductor materials of great technological interest and on the development of a new implementation of appearance potential spectroscopy. Core-level spectroscopies can be exploited to study these materials with a local approach since they are sensitive to the electronic structure localized on a chemical species present in the sample examined. This approach, in fact, provides important micro-structural information that is difficult to obtain with techniques sensitive to the average properties of materials. In this thesis work we present a novel approach to the study of semiconductors with core-level spectroscopies based on an original analysis procedure that leads to an insightful understanding of the correlation between the local micro-structure and the spectral features observed. In particular, we studied the micro-structure of Hydrogen induced defects in nitride semiconductors, since the analysed materials show substantial variations of optical and electronic properties as a consequence of H incorporation. Finally, we present a novel implementation of soft x-ray appearance potential spectroscopy, a core-level spectroscopy that uses electrons as a source of excitation and has the great advantage of being an in-house technique. The original set-up illustrated was designed to reach a high signal-to-noise ratio for the acquisition of good quality spectra that can then be analyzed in the framework of the real space full multiple scattering theory. This technique has never been coupled with this analysis approach and therefore our work unite a novel implementation with an original data analysis method, enlarging the field of application of this technique.

Photoinduced electronic transitions and leakage correlation to defects/dislocations in GaN heterostructures

III-nitride materials are very promising for high speed electronics/optical applications but still suffer in performance due to problems during high quality epitaxial growth, evolution of dislocation and defects, less understanding of fundamental physics of materials/processing of devices etc. This thesis mainly focus on GaN based heterostructures to understand the metal-semiconductor interface properties, 2DE(H)G influence on electrical and optical properties, and deep level states in GaN and InAlN, InGaN materials. The detailed electrical characterizations have been employed on Schottky diodes at GaN and InAl(Ga)N/GaN heterostructures in order to understand the metal-semiconductor interface related properties in these materials. I have observed the occurrence of Schottky barrier inhomogenity, role of dislocations in terms of leakage and creating electrically active defect states within energy gap of materials. Deep level transient spectroscopy method is employed on GaN, InAlN and InGaN materials and several defect levels have been observed related to majority and minority carriers. In fact, some defects have been found common in characteristics in ternary layers and GaN layer which indicates that those defect levels are from similar origin, most probably due to Ga/N vacancy in GaN/heterostructures. The role of structural defects, roughness has been extensively understood in terms of enhancing the reverse leakage current, suppressing the mobility in InAlN/AlN/GaN based high electron mobility transistor (HEMT) structures which are identified as key issues for GaN technology. Optical spectroscopy methods have been employed to understand materials quality, sub band and defect related transitions and compared with electrical characterizations. The observation of 2DEG sub band related absorption/emission in optical spectra have been identified and proposed for first time in nitride based polar heterostructures, which is well supported with simulation results. In addition, metal-semiconductor-metal (MSM)-InAl(Ga)N/GaN based photodetector structures have been fabricated and proposed for achieving high efficient optoelectronics devices in future.

Ion implantation of organic thin films and electronic devices

Organic semiconductors have great promise in the field of electronics due to their low cost in term of fabrication on large areas and their versatility to new devices, for these reasons they are becoming a great chance in the actual technologic scenery. Some of the most important open issues related to these materials are the effects of surfaces and interfaces between semiconductor and metals, the changes caused by different deposition methods and temperature, the difficulty related to the charge transport modeling and finally a fast aging with time, bias, air and light, that can change the properties very easily. In order to find out some important features of organic semiconductors I fabricated Organic Field Effect Transistors (OFETs), using them as characterization tools. The focus of my research is to investigate the effects of ion implantation on organic semiconductors and on OFETs. Ion implantation is a technique widely used on inorganic semiconductors to modify their electrical properties through the controlled introduction of foreign atomic species in the semiconductor matrix. I pointed my attention on three major novel and interesting effects, that I observed for the first time following ion implantation of OFETs: 1) modification of the electrical conductivity; 2) introduction of stable charged species, electrically active with organic thin films; 3) stabilization of transport parameters (mobility and threshold voltage). I examined 3 different semiconductors: Pentacene, a small molecule constituted by 5 aromatic rings, Pentacene-TIPS, a more complex by-product of the first one, and finally an organic material called Pedot PSS, that belongs to the branch of the conductive polymers. My research started with the analysis of ion implantation of Pentacene films and Pentacene OFETs. Then, I studied totally inkjet printed OFETs made of Pentacene-TIPS or PEDOT-PSS, and the research will continue with the ion implantation on these promising organic devices.

Strukturelle, chemische und isotopische Analysen nanoskaliger präsolarer und früher solarer Kondensate

Neben astronomischen Beobachtungen mittels boden- und satellitengestützer Instrumente existiert ein weiterer experimenteller Zugang zu astrophysikalischen Fragestellungen in Form einer Auswahl extraterrestrischen Materials, das für Laboruntersuchungen zur Verfügung steht. Hierzu zählen interplanetare Staubpartikel, Proben, die von Raumfahrzeugen zur Erde zurückgebracht wurden und primitive Meteorite. Von besonderem Interesse sind sog. primitive kohlige Chondrite, eine Klasse von Meteoriten, die seit ihrer Entstehung im frühen Sonnensystem kaum verändert wurden. Sie enthalten neben frühem solarem Material präsolare Minerale, die in Sternwinden von Supernovae und roten Riesensternen kondensiert sind und die Bildung unseres Sonnensystems weitgehend unverändert überstanden haben. Strukturelle, chemische und isotopische Analysen dieser Proben besitzen demnach eine große Relevanz für eine Vielzahl astrophysikalischer Forschungsgebiete. Im Rahmen der vorliegenden Arbeit wurden Laboranalysen mittels modernster physikalischer Methoden an Bestandteilen primitiver Meteorite durchgeführt. Aufgrund der Vielfalt der zu untersuchenden Eigenschaften und der geringen Größen der analysierten Partikel zwischen wenigen Nanometern und einigen Mikrometern mussten hierbei hohe Anforderungen an Nachweiseffizienz und Ortsauflösung gestellt werden. Durch die Kombination verschiedener Methoden wurde ein neuer methodologischer Ansatz zur Analyse präsolarer Minerale (beispielsweise SiC) entwickelt. Aufgrund geringer Mengen verfügbaren Materials basiert dieses Konzept auf der parallelen nichtdestruktiven Vorcharakterisierung einer Vielzahl präsolarer Partikel im Hinblick auf ihren Gehalt diagnostischer Spurenelemente. Eine anschließende massenspektrometrische Untersuchung identifizierter Partikel mit hohen Konzentrationen interessanter Elemente ist in der Lage, Informationen zu nukleosynthetischen Bedingungen in ihren stellaren Quellen zu liefern. Weiterhin wurden Analysen meteoritischer Nanodiamanten durchgeführt, deren geringe Größen von wenigen Nanometern zu stark modifizierten Festkörpereigenschaften führen. Im Rahmen dieser Arbeit wurde eine quantitative Beschreibung von Quanteneinschluss-Effekten entwickelt, wie sie in diesen größenverteilten Halbleiter-Nanopartikeln auftreten. Die abgeleiteten Ergebnisse besitzen Relevanz für nanotechnologische Forschungen. Den Kern der vorliegenden Arbeit bilden Untersuchungen an frühen solaren Partikeln, sog. refraktären Metall Nuggets (RMN). Mit Hilfe struktureller, chemischer und isotopischer Analysen, sowie dem Vergleich der Ergebnisse mit thermodynamischen Rechnungen, konnte zum ersten Mal ein direkter Nachweis von Kondensationsprozessen im frühen solaren Nebel erbracht werden. Die analysierten RMN gehören zu den ersten Festkörperkondensaten, die im frühen Sonnensystem gebildet wurden und scheinen seit ihrer Entstehung nicht durch sekundäre Prozesse verändert worden zu sein. Weiterhin konnte erstmals die Abkühlrate des Gases des lokalen solaren Nebels, in dem die ersten Kondensationsprozesse stattfanden, zu 0.5 K/Jahr bestimmt werden, wodurch ein detaillierter Blick in die thermodynamische Geschichte des frühen Sonnensystems möglich wird. Die extrahierten Parameter haben weitreichende Auswirkungen auf die Modelle der Entstehung erster solarer Festkörper, welche die Grundbausteine der Planetenbildung darstellen.

Forensisch relevante SNP-Genotypisierung mittels elektronischer Microarray-Technologie

Die vorliegende Dissertation entstand im Rahmen eines multizentrischen EU-geförderten Projektes, das die Anwendungsmöglichkeiten von Einzelnukleotid-Polymorphismen (SNPs) zur Individualisierung von Personen im Kontext der Zuordnung von biologischen Tatortspuren oder auch bei der Identifizierung unbekannter Toter behandelt. Die übergeordnete Zielsetzung des Projektes bestand darin, hochauflösende Genotypisierungsmethoden zu etablieren und zu validieren, die mit hoher Genauigkeit aber geringen Aufwand SNPs im Multiplexformat simultan analysieren können. Zunächst wurden 29 Y-chromosomale und 52 autosomale SNPs unter der Anforderung ausgewählt, dass sie als Multiplex eine möglichst hohe Individualisierungschance aufweisen. Anschließend folgten die Validierungen beider Multiplex-Systeme und der SNaPshot™-Minisequenzierungsmethode in systematischen Studien unter Beteiligung aller Arbeitsgruppen des Projektes. Die validierte Referenzmethode auf der Basis einer Minisequenzierung diente einerseits für die kontrollierte Zusammenarbeit unterschiedlicher Laboratorien und andererseits als Grundlage für die Entwicklung eines Assays zur SNP-Genotypisierung mittels der elektronischen Microarray-Technologie in dieser Arbeit. Der eigenständige Hauptteil dieser Dissertation beschreibt unter Verwendung der zuvor validierten autosomalen SNPs die Neuentwicklung und Validierung eines Hybridisierungsassays für die elektronische Microarray-Plattform der Firma Nanogen Dazu wurden im Vorfeld drei verschiedene Assays etabliert, die sich im Funktionsprinzip auf dem Microarray unterscheiden. Davon wurde leistungsorientiert das Capture down-Assay zur Weiterentwicklung ausgewählt. Nach zahlreichen Optimierungsmaßnahmen hinsichtlich PCR-Produktbehandlung, gerätespezifischer Abläufe und analysespezifischer Oligonukleotiddesigns stand das Capture down-Assay zur simultanen Typisierung von drei Individuen mit je 32 SNPs auf einem Microarray bereit. Anschließend wurde dieses Verfahren anhand von 40 DNA-Proben mit bekannten Genotypen für die 32 SNPs validiert und durch parallele SNaPshot™-Typisierung die Genauigkeit bestimmt. Das Ergebnis beweist nicht nur die Eignung des validierten Analyseassays und der elektronischen Microarray-Technologie für bestimmte Fragestellungen, sondern zeigt auch deren Vorteile in Bezug auf Schnelligkeit, Flexibilität und Effizienz. Die Automatisierung, welche die räumliche Anordnung der zu untersuchenden Fragmente unmittelbar vor der Analyse ermöglicht, reduziert unnötige Arbeitsschritte und damit die Fehlerhäufigkeit und Kontaminationsgefahr bei verbesserter Zeiteffizienz. Mit einer maximal erreichten Genauigkeit von 94% kann die Zuverlässigkeit der in der forensischen Genetik aktuell eingesetzten STR-Systeme jedoch noch nicht erreicht werden. Die Rolle des neuen Verfahrens wird damit nicht in einer Ablösung der etablierten Methoden, sondern in einer Ergänzung zur Lösung spezieller Probleme wie z.B. der Untersuchung stark degradierter DNA-Spuren zu finden sein.

Selective photo-oxidation of cellobiose with tio2-supported metal nanoparticles

Upgrade of biomass to valuable chemicals is a central topic in modern research due to the high availability and low price of this feedstock. For the difficulties in biomass treatment, different pathways are still under investigation. A promising way is in the photodegradation, because it can lead to greener transformation processes with the use of solar light as a renewable resource. The aim of my work was the research of a photocatalyst for the hydrolysis of cellobiose under visible irradiation. Cellobiose was selected because it is a model molecule for biomass depolymerisation studies. Different titania crystalline structures were studied to find the most active phase. Furthermore, to enhance the absorption of this semiconductor in the visible range, noble metal nanoparticles were immobilized on titania. Gold and silver were chosen because they present a Surface Plasmon Resonance band and they are active metals in several photocatalytic reactions. The immobilized catalysts were synthesized following different methods to optimize the synthetic steps and to achieve better performances. For the same purpose the alloying effect between gold and silver nanoparticles was examined.

Hydrophobe und hydrophile Beladung polymerer Vesikel

Polymere Vesikel, gebildet durch Selbstorganisation des amphiphilen Blockcopolymers Polybutadien-b-Polyethylenoxid in Wasser, wurden in der vorliegenden Arbeit erfolgreich mit hydrophoben und hydrophilen Substraten beladen und detailliert charakterisiert. Über verschiedene Präparationsmethoden sind unilamellare PB130-PEO66-Vesikel unterschiedlicher Größen und Verteilungsbreiten zugänglich, die aber alle eine konstante hydrophobe Schalendicke von etwa 15nm aufweisen, wie aus TEM-Messungen hervorgeht. Die hydrophoben Farbstoffe Oil Red EGN, Oil Blue N, Nilrot sowie ein Perylen-Derivat wurden in diese hydrophobe Schale eingelagert. Durch Absorptions-, Emissions-, (cryo)TEM- und Fluoreszenzmikroskopie-Messungen konnte gezeigt werden, dass die selbstorganisierte Struktur durch die Einlagerung der hydrophoben Farbstoffe in die Schale nicht beeinflusst wird. Als zusätzliche hydrophobe Modell-Substrate wurden Halbleiter-Nanokristalle, sogenannte Quantum Dots (QDs, d=5.7nm), erfolgreich in die polymere Vesikelschale eingelagert und durch Fluoreszenz-Korrelations-Spektroskopie (FCS) in Kombination mit dynamischer Lichtstreuung (DLS) nachgewiesen. Die Position der QDs in der Mitte der polymeren Doppelmembran konnte durch cryogene TEM-Abbildungen aufgezeigt werden. Darüber hinaus wurde die hydrophile Beladung des Vesikelkerns mit dem wasserlöslichen Farbstoff Phloxin B erfolgreich realisiert.

Multicomponent nanodevices based on molecular and nanocrystal moieties

Nanoscience is an emerging and fast-growing field of science with the aim of manipulating nanometric objects with dimension below 100 nm. Top down approach is currently used to build these type of architectures (e.g microchips). The miniaturization process cannot proceed indefinitely due to physical and technical limitations. Those limits are focusing the interest on the bottom-up approach and construction of nano-objects starting from “nano-bricks” like atoms, molecules or nanocrystals. Unlike atoms, molecules can be “fully programmable” and represent the best choice to build up nanostructures. In the past twenty years many examples of functional nano-devices able to perform simple actions have been reported. Nanocrystals which are often considered simply nanostructured materials, can be active part in the development of those nano-devices, in combination with functional molecules. The object of this dissertation is the photophysical and photochemical investigation of nano-objects bearing molecules and semiconductor nanocrystals (QDs) as components. The first part focuses on the characterization of a bistable rotaxane. This study, in collaboration with the group of Prof. J.F. Stoddart (Northwestern University, Evanston, Illinois, USA) who made the synthesis of the compounds, shows the ability of this artificial machine to operate as bistable molecular-level memory under kinetic control. The second part concerns the study of the surface properties of luminescent semiconductor nanocrystals (QDs) and in particular the effect of acid and base on the spectroscopical properties of those nanoparticles. In this section is also reported the work carried out in the laboratory of Prof H. Mattoussi (Florida State University, Tallahassee, Florida, USA), where I developed a novel method for the surface decoration of QDs with lipoic acid-based ligands involving the photoreduction of the di-thiolane moiety.

Modelling and Design of Advanced Reliable Circuits and Devices for Energy Efficiency

Reliable electronic systems, namely a set of reliable electronic devices connected to each other and working correctly together for the same functionality, represent an essential ingredient for the large-scale commercial implementation of any technological advancement. Microelectronics technologies and new powerful integrated circuits provide noticeable improvements in performance and cost-effectiveness, and allow introducing electronic systems in increasingly diversified contexts. On the other hand, opening of new fields of application leads to new, unexplored reliability issues. The development of semiconductor device and electrical models (such as the well known SPICE models) able to describe the electrical behavior of devices and circuits, is a useful means to simulate and analyze the functionality of new electronic architectures and new technologies. Moreover, it represents an effective way to point out the reliability issues due to the employment of advanced electronic systems in new application contexts. In this thesis modeling and design of both advanced reliable circuits for general-purpose applications and devices for energy efficiency are considered. More in details, the following activities have been carried out: first, reliability issues in terms of security of standard communication protocols in wireless sensor networks are discussed. A new communication protocol is introduced, allows increasing the network security. Second, a novel scheme for the on-die measurement of either clock jitter or process parameter variations is proposed. The developed scheme can be used for an evaluation of both jitter and process parameter variations at low costs. Then, reliability issues in the field of “energy scavenging systems” have been analyzed. An accurate analysis and modeling of the effects of faults affecting circuit for energy harvesting from mechanical vibrations is performed. Finally, the problem of modeling the electrical and thermal behavior of photovoltaic (PV) cells under hot-spot condition is addressed with the development of an electrical and thermal model.

New design of polyphenylene dendrimers for full-color light-emitting diodes

Dendritic systems, and in particular polyphenylene dendrimers, have recently attracted considerable attention from the synthetic organic chemistry community, as well as from photophysicists, particularly in view of the search for synthetic model analogies to photoelectric materials to fabricate organic light-emitting diodes (OLEDs), and even more advanced areas of research such as light-harvesting system, energy transfer and non-host device. Geometrically, dendrimers are unique systems that consist of a core, one or more dendrons, and surface groups. The different parts of the macromolecule can be selected to give the desired optoelectronic and processing properties. Compared to small molecular or polymeric light-emitting materials, these dendritic materials can combine the benefits of both previous classes. The high molecular weights of these dendritic macromolecules, as well as the surface groups often attached to the distal ends of the dendrons, can improve the solution processability, and thus can be deposited from solution by simple processes such as spin-coating and ink-jet printing. Moreover, even better than the traditional polymeric light-emitting materials, the well-defined monodisperse distributed dendrimers possess a high purity comparable to that of small molecules, and as such can be fabricated into high performance OLEDs. Most importantly, the emissive chromophores can be located at the core of the dendrimer, within the dendrons, and/or at the surface of the dendrimers because of their unique dendritic architectures. The different parts of the macromolecule can be selected to give the desired optoelectronic and processing properties. Therefore, the main goals of this thesis are the design and synthesis, characterization of novel functional dendrimers, e.g. polytriphenylene dendrimers for blue fluorescent, as well as iridium(III) complex cored polyphenylene dendrimers for green and red phosphorescent light emitting diodes. In additional to the above mentioned advantages of dendrimer based OLEDs, the modular molecular architecture and various functionalized units at different locations in polyphenylene dendrimers open up a tremendous scope for tuning a wide range of properties in addition to color, such as intermolecular interactions, charge mobility, quantum yield, and exciton diffusion. In conclusion, research into dendrimer containing OLEDs combines fundamental aspects of organic semiconductor physics, novel and highly sophisticated organic synthetic chemistry and elaborate device technology.rn

The influence of film morphology on solution processed organic field-effect transistors

Organic field-effect transistors (OFETs) are becoming interesting owing to their prospective application as cheap, bendable and light weight electronic devices rnlike flexible displays. However, the bottleneck of OFETs is their typically low charge carrier mobilities. An effective and crucial route towards circumventing thisrnhurdle is the control of organic semiconductor thin film morphology which critically determine charge carrier transport. In this work, the influence of film morphologyrnis highlighted together with its impact on OFET transistor performance.

Fabrication, Electrical Characterization and Simulation of Thin Film Solar Cells: CdTe and CIGS Materials

CdTe and Cu(In,Ga)Se2 (CIGS) thin film solar cells are fabricated, electrically characterized and modelled in this thesis. We start from the fabrication of CdTe thin film devices where the R.F. magnetron sputtering system is used to deposit the CdS/CdTe based solar cells. The chlorine post-growth treatment is modified in order to uniformly cover the cell surface and reduce the probability of pinholes and shunting pathways creation which, in turn, reduces the series resistance. The deionized water etching is proposed, for the first time, as the simplest solution to optimize the effect of shunt resistance, stability and metal-semiconductor inter-diffusion at the back contact. In continue, oxygen incorporation is proposed while CdTe layer deposition. This technique has been rarely examined through R.F sputtering deposition of such devices. The above experiments are characterized electrically and optically by current-voltage characterization, scanning electron microscopy, x-ray diffraction and optical spectroscopy. Furthermore, for the first time, the degradation rate of CdTe devices over time is numerically simulated through AMPS and SCAPS simulators. It is proposed that the instability of electrical parameters is coupled with the material properties and external stresses (bias, temperature and illumination). Then, CIGS materials are simulated and characterized by several techniques such as surface photovoltage spectroscopy is used (as a novel idea) to extract the band gap of graded band gap CIGS layers, surface or bulk defect states. The surface roughness is scanned by atomic force microscopy on nanometre scale to obtain the surface topography of the film. The modified equivalent circuits are proposed and the band gap graded profiles are simulated by AMPS simulator and several graded profiles are examined in order to optimize their thickness, grading strength and electrical parameters. Furthermore, the transport mechanisms and Auger generation phenomenon are modelled in CIGS devices.

Controllo ottico automatizzato di circuiti fotonici integrati: Progettazione, realizzazione e valutazione

In this report a new automated optical test for next generation of photonic integrated circuits (PICs) is provided by the test-bed design and assessment. After a briefly analysis of critical problems of actual optical tests, the main test features are defined: automation and flexibility, relaxed alignment procedure, speed up of entire test and data reliability. After studying varied solutions, the test-bed components are defined to be lens array, photo-detector array, and software controller. Each device is studied and calibrated, the spatial resolution, and reliability against interference at the photo-detector array are studied. The software is programmed in order to manage both PIC input, and photo-detector array output as well as data analysis. The test is validated by analysing state-of-art 16 ports PIC: the waveguide location, current versus power, and time-spatial power distribution are measured as well as the optical continuity of an entire path of PIC. Complexity, alignment tolerance, time of measurement are also discussed.